IXYK100N120C3

Preliminary Technical Information IXYK100N120C3 IXYX100N120C3 1200V XPTTM IGBTs GenX3TM VCES IC110 VCE(sat) tfi(typ) High-Speed IGBT for 20-50 kHz Switching = = ≤ = 1200V 100A 3.5V 110ns TO-264 (IXYK) Symbol Test Conditions Maximum Ratings VCES VCGR TJ = 25°C to 175°C TJ = 25°C to 175°C, RGE = 1MΩ VGES VGEM 1200 1200 V V Continuous Transient ±20 ±30 V V IC25 ILRMS IC110 ICM TC = 25°C (Chip Capability) Terminal Current Limit TC = 110°C TC = 25°C, 1ms 188 160 100 490 A A A A IA EAS TC = 25°C TC = 25°C 50 1.2 A J SSOA (RBSOA) VGE = 15V, TVJ = 150°C, RG = 1Ω Clamped Inductive Load ICM = 200 @VCE ≤ VCES A PC TC = 25°C 1150 W -55 ... +175 175 -55 ... +175 °C °C °C 300 260 °C °C 1.13/10 Nm/lb.in. 20..120 /4.5..27 N/lb. 10 6 g g TJ TJM Tstg TL TSOLD Maximum Lead Temperature for Soldering 1.6 mm (0.062in.) from Case for 10s Md Mounting Torque (TO-264) FC Mounting Force Weight TO-264 PLUS247 (PLUS247) G C E PLUS247 (IXYX) G Characteristic Values Min. Typ. Max. BVCES IC = 250μA, VGE = 0V 1200 VGE(th) IC = 250μA, VCE = VGE 3.0 ICES VCE = VCES, VGE = 0V 5.0 IGES VCE = 0V, VGE = ±20V VCE(sat) IC = IC110, VGE = 15V, Note 1 TJ = 150°C 2.9 4.1 z z z z z z Tab E = Emitter Tab = Collector Optimized for Low Switching Losses Square RBSOA Positive Thermal Coefficient of Vce(sat) Avalanche Rated High Current Handling Capability International Standard Packages Advantages High Power Density Low Gate Drive Requirement Applications ±100 nA 3.5 V V z z z z z z z z © 2013 IXYS CORPORATION, All Rights Reserved E V 25 μA 1.25 mA TJ = 150°C C Features z V G G = Gate C = Collector z Symbol Test Conditions (TJ = 25°C, Unless Otherwise Specified) Tab High Frequency Power Inverters UPS Motor Drives SMPS PFC Circuits Battery Chargers Welding Machines Lamp Ballasts DS100404A(03/13) IXYK100N120C3 IXYX100N120C3 Symbol Test Conditions (TJ = 25°C Unless Otherwise Specified) Characteristic Values Min. Typ. Max. gfs 30 IC = 60A, VCE = 10V, Note 1 Cies Coes Cres VCE = 25V, VGE = 0V, f = 1MHz Qg(on) Qge Qgc IC = IC110, VGE = 15V, VCE = 0.5 • VCES td(on) tri Eon td(off) tfi Eoff td(on) tri Eon td(off) tfi Eoff Inductive load, TJ = 25°C IC = IC110, VGE = 15V VCE = 0.5 • VCES, RG = 1Ω Note 2 Inductive load, TJ = 125°C IC = IC110, VGE = 15V VCE = 0.5 • VCES, RG = 1Ω Note 2 RthJC RthCS TO-264 Outline 52 S 6000 353 130 pF pF pF 270 nC 50 nC 93 nC 32 90 6.50 123 110 2.90 ns ns mJ ns ns mJ 5.00 32 90 10.10 140 125 3.55 ns ns mJ ns ns mJ 0.15 0.13 °C/W °C/W Terminals: 1 = Gate 2,4 = Collector 3 = Emitter PLUS247TM Outline Notes: 1. Pulse test, t ≤ 300μs, duty cycle, d ≤ 2%. 2. Switching times & energy losses may increase for higher VCE(clamp), TJ or RG. Terminals: 1 - Gate 2 - Collector 3 - Emitter Dim. PRELIMANARY TECHNICAL INFORMATION The product presented herein is under development. The Technical Specifications offered are derived from a subjective evaluation of the design, based upon prior knowledge and experience, and constitute a "considered reflection" of the anticipated result. IXYS reserves the right to change limits, test conditions, and dimensions without notice. A A1 A2 b b1 b2 C D E e L L1 Q R Millimeter Min. Max. 4.83 5.21 2.29 2.54 1.91 2.16 1.14 1.40 1.91 2.13 2.92 3.12 0.61 0.80 20.80 21.34 15.75 16.13 5.45 BSC 19.81 20.32 3.81 4.32 5.59 6.20 4.32 4.83 Inches Min. Max. .190 .205 .090 .100 .075 .085 .045 .055 .075 .084 .115 .123 .024 .031 .819 .840 .620 .635 .215 BSC .780 .800 .150 .170 .220 0.244 .170 .190 IXYS Reserves the Right to Change Limits, Test Conditions, and Dimensions. IXYS MOSFETs and IGBTs are covered 4,835,592 by one or more of the following U.S. patents: 4,860,072 4,881,106 4,931,844 5,017,508 5,034,796 5,049,961 5,063,307 5,187,117 5,237,481 5,381,025 5,486,715 6,162,665 6,259,123 B1 6,306,728 B1 6,404,065 B1 6,534,343 6,583,505 6,683,344 6,727,585 7,005,734 B2 6,710,405 B2 6,759,692 7,063,975 B2 6,710,463 6,771,478 B2 7,071,537 7,157,338B2 IXYK100N120C3 IXYX100N120C3 Fig. 2. Extended Output Characteristics @ T J = 25ºC Fig. 1. Output Characteristics @ T J = 25ºC 300 200 VGE = 15V 13V 12V 11V 10V 180 160 250 9V 120 100 8V 80 60 8V 7V 50 20 6V 6V 0 0 0 0.5 1 1.5 2 2.5 3 3.5 4 4.5 5 5.5 0 5 10 15 20 VCE - Volts VCE - Volts Fig. 3. Output Characteristics @ T J = 125ºC Fig. 4. Dependence of VCE(sat) on Junction Temperature 25 2.2 200 VGE = 15V 13V 12V 11V 10V 160 140 VGE = 15V 2.0 I 1.8 9V VCE(sat) - Normalized 180 IC - Amperes 9V 150 100 7V 40 120 100 8V 80 7V 60 C = 200A 1.6 1.4 I 1.2 C = 100A 1.0 0.8 40 I 6V 20 C = 50A 0.6 5V 0.4 0 0 1 2 3 4 5 6 7 -50 8 -25 0 VCE - Volts 25 50 75 100 125 150 TJ - Degrees Centigrade Fig. 5. Collector-to-Emitter Voltage vs. Gate-to-Emitter Voltage Fig. 6. Input Admittance 200 8.5 TJ = 25ºC TJ = - 40ºC 25ºC 125ºC 180 7.5 160 6.5 140 I 5.5 C IC - Amperes VCE - Volts 10V 200 IC - Amperes IC - Amperes 140 11V VGE = 15V 13V 12V = 200A 4.5 3.5 120 100 80 60 100A 40 2.5 20 50A 1.5 0 6 7 8 9 10 11 12 VGE - Volts © 2013 IXYS CORPORATION, All Rights Reserved 13 14 15 3.5 4.5 5.5 6.5 VGE - Volts 7.5 8.5 9.5 IXYK100N120C3 IXYX100N120C3 Fig. 7. Transconductance Fig. 8. Gate Charge 90 16 TJ = - 40ºC 80 VCE = 600V 14 I C = 100A 125ºC 50 I G = 10mA 12 25ºC 60 VGE - Volts g f s - Siemens 70 40 30 10 8 6 4 20 2 10 0 0 0 20 40 60 80 100 120 140 160 180 200 0 40 80 IC - Amperes 120 160 200 240 280 QG - NanoCoulombs Fig. 10. Reverse-Bias Safe Operating Area Fig. 9. Capacitance 220 100,000 200 f = 1 MHz 160 Cies IC - Amperes Capacitance - PicoFarads 180 10,000 1,000 Coes 140 120 100 80 60 100 Cres 40 20 0 200 10 0 5 10 15 20 25 30 35 40 TJ = 150ºC RG = 1Ω dv / dt < 10V / ns 300 400 500 VCE - Volts 600 700 800 900 1000 1100 1200 1300 VCE - Volts 1 Fig. 11. Maximum Transient Thermal Impedance aaaaaa 0.3 Z(th)JC - ºC / W 0.1 0.01 0.001 0.00001 0.0001 0.001 0.01 Pulse Width - Seconds IXYS Reserves the Right to Change Limits, Test Conditions, and Dimensions. 0.1 1 10 IXYK100N120C3 IXYX100N120C3 Fig. 13. Inductive Switching Energy Loss vs. Collector Current Fig. 12. Inductive Switching Energy Loss vs. Gate Resistance 8 Eoff Eon - --- 14 TJ = 125ºC , VGE = 15V VCE = 600V 6 12 4 8 3 6 2 I C 1 2 3 4 5 6 7 8 9 10 TJ = 125ºC 3.0 8 2.5 6 TJ = 25ºC 2 50 10 55 60 65 70 RG - Ohms 4.5 ---- 95 0 100 tfi 6 4 t f i - Nanoseconds 2.5 Eon - MilliJoules 8 I C = 50A 400 VCE = 600V 10 3.0 td(off) - - - - TJ = 125ºC, VGE = 15V 120 300 I C = 100A I 100 C = 50A 200 80 1.5 t d(off) - Nanoseconds I C = 100A 2.0 100 2 1.0 25 50 75 0 125 100 60 0 1 2 3 4 170 220 170 200 150 RG = 1Ω , VGE = 15V TJ = 125ºC 110 160 90 70 50 65 10 td(off) - - - - RG = 1Ω , VGE = 15V 200 70 75 80 85 IC - Amperes © 2013 IXYS CORPORATION, All Rights Reserved 90 95 130 180 110 160 I C = 50A, 100A 90 140 120 70 120 100 100 50 140 TJ = 25ºC 60 9 25 50 75 TJ - Degrees Centigrade 100 100 125 t d(off) - Nanoseconds 180 t d(off) - Nanoseconds 130 55 8 VCE = 600V VCE = 600V 50 7 220 tfi td(off) - - - - t f i - Nanoseconds tfi 6 Fig. 17. Inductive Turn-off Switching Times vs. Junction Temperature Fig. 16. Inductive Turn-off Switching Times vs. Collector Current 150 5 RG - Ohms TJ - Degrees Centigrade t f i - Nanoseconds 90 500 140 VCE = 600V 85 160 12 RG = 1Ω , VGE = 15V 3.5 Eoff - MilliJoules Eon 80 Fig. 15. Inductive Turn-off Switching Times vs. Gate Resistance 14 Eoff 75 IC - Amperes Fig. 14. Inductive Switching Energy Loss vs. Junction Temperature 4.0 4 1.0 0 1 VCE = 600V 1.5 2 0 12 2.0 4 = 50A ---- Eon - MilliJoules 10 Eon RG = 1Ω , VGE = 15V 3.5 Eon - MilliJoules I C = 100A 5 14 Eoff 4.0 Eoff - MilliJoules 7 Eoff - MilliJoules 4.5 16 IXYK100N120C3 IXYX100N120C3 Fig. 19. Inductive Turn-on Switching Times vs. Collector Current Fig. 18. Inductive Turn-on Switching Times vs. Gate Resistance 200 160 C = 100A 40 I 40 C 30 = 50A 0 2 3 4 5 6 7 8 9 100 31 80 30 TJ = 25ºC 60 29 40 28 20 20 1 32 TJ = 125ºC 50 10 RG - Ohms 55 60 65 70 75 80 85 90 95 t d(on) - Nanoseconds 50 td(on) - - - - RG = 1Ω , VGE = 15V VCE = 600V t d(on) - Nanoseconds 120 80 120 60 VCE = 600V I 33 tri td(on) - - - - TJ = 125ºC, VGE = 15V t r i - Nanoseconds tri t r i - Nanoseconds 140 70 27 100 IC - Amperes Fig. 20. Inductive Turn-on Switching Times vs. Junction Temperature 160 35 tri 140 34 33 I 100 C = 100A 32 80 31 60 30 40 t d(on) - Nanoseconds VCE = 600V 120 t r i - Nanoseconds td(on) - - - - RG = 1Ω , VGE = 15V 29 I C = 50A 20 28 0 25 50 75 100 27 125 TJ - Degrees Centigrade IXYS Reserves the Right to Change Limits, Test Conditions, and Dimensions. IXYS REF: IXY_100N120C3(9T)10-26-11 Disclaimer Notice - Information furnished is believed to be accurate and reliable. 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