IXYK120N120C3

IXYK120N120C3 IXYX120N120C3 1200V XPTTM IGBTs GenX3TM VCES = IC110 = VCE(sat)  tfi(typ) = High-Speed IGBTs for 20-50 kHz Switching 1200V 120A 3.20V 96ns TO-264 (IXYK) Symbol Test Conditions Maximum Ratings VCES VCGR TJ = 25°C to 175°C TJ = 25°C to 175°C, RGE = 1M VGES VGEM 1200 1200 V V Continuous Transient ±20 ±30 V V IC25 ILRMS IC110 ICM TC= 25°C (Chip Capability) Terminal Current Limit TC= 110°C TC = 25°C, 1ms 240 160 120 700 A A A A IA EAS TC = 25°C TC = 25°C 60 2 A J SSOA (RBSOA) VGE = 15V, TVJ = 150°C, RG = 1 Clamped Inductive Load ICM = 240 VCE  VCES A PC TC = 25°C 1500 W -55 ... +175 175 -55 ... +175 °C °C °C 300 260 °C °C 1.13/10 Nm/lb.in 20..120 /4.5..27 N/lb 10 6 g g TJ TJM Tstg TL TSOLD Maximum Lead Temperature for Soldering 1.6 mm (0.062in.) from Case for 10s Md Mounting Torque (TO-264) FC Mounting Force Weight TO-264 PLUS247 (PLUS247) G C E PLUS247 (IXYX) G BVCES IC = 250A, VGE = 0V 1200 VGE(th) IC = 500A, VCE = VGE 3.0 ICES VCE = VCES, VGE = 0V V 5.0 25 A 1.5 mA TJ = 150C IGES VCE = 0V, VGE = 20V VCE(sat) IC = IC110, VGE = 15V, Note 1 TJ = 150C © 2013 IXYS CORPORATION, All Rights Reserved V 100 2.55 3.40 3.20 nA V V C E Tab E = Emitter Tab = Collector Features       Optimized for Low Switching Losses Square RBSOA International Standard Packages Positive Thermal Coefficient of Vce(sat) Avalanche Rated High Current Handling Capability Advantages  Characteristic Values Min. Typ. Max. G G = Gate C = Collector  Symbol Test Conditions (TJ = 25C, Unless Otherwise Specified) Tab High Power Density Low Gate Drive Requirement Applications         High Frequency Power Inverters UPS Motor Drives SMPS PFC Circuits Battery Chargers Welding Machines Lamp Ballasts DS100451B(9/13) IXYK120N120C3 IXYX120N120C3 Symbol Test Conditions (TJ = 25°C Unless Otherwise Specified) Characteristic Values Min. Typ. Max. gfs 40 IC = 60A, VCE = 10V, Note 1 Cies Coes Cres VCE = 25V, VGE = 0V, f = 1MHz Qg(on) Qge Qgc IC = IC110, VGE = 15V, VCE = 0.5 • VCES td(on) tri Eon td(off) tfi Eoff td(on) tri Eon td(off) tfi Eoff Inductive load, TJ = 25°C IC = 100A, VGE = 15V VCE = 0.5 • VCES, RG = 1 Note 2 Inductive load, TJ = 150°C IC = 100A, VGE = 15V VCE = 0.5 • VCES, RG = 1 Note 2 RthJC RthCS TO-264 Outline 68 S 9850 580 218 pF pF pF 412 nC 73 nC 180 nC 35 77 6.75 176 96 5.10 ns ns mJ ns ns mJ 33 72 10.30 226 120 7.20 ns ns mJ ns ns mJ 0.15 0.10 °C/W °C/W Terminals: 1 = Gate 2,4 = Collector 3 = Emitter PLUS247TM Outline Notes: 1. Pulse test, t  300μs, duty cycle, d  2%. 2. Switching times & energy losses may increase for higher VCE(clamp), TJ or RG. Terminals: 1 - Gate 2 - Collector 3 - Emitter Dim. A A1 A2 b b1 b2 C D E e L L1 Q R Millimeter Min. Max. 4.83 5.21 2.29 2.54 1.91 2.16 1.14 1.40 1.91 2.13 2.92 3.12 0.61 0.80 20.80 21.34 15.75 16.13 5.45 BSC 19.81 20.32 3.81 4.32 5.59 6.20 4.32 4.83 Inches Min. Max. .190 .205 .090 .100 .075 .085 .045 .055 .075 .084 .115 .123 .024 .031 .819 .840 .620 .635 .215 BSC .780 .800 .150 .170 .220 0.244 .170 .190 IXYS Reserves the Right to Change Limits, Test Conditions, and Dimensions. IXYS MOSFETs and IGBTs are covered 4,835,592 by one or more of the following U.S. patents: 4,860,072 4,881,106 4,931,844 5,017,508 5,034,796 5,049,961 5,063,307 5,187,117 5,237,481 5,381,025 5,486,715 6,162,665 6,259,123 B1 6,306,728 B1 6,404,065 B1 6,534,343 6,583,505 6,683,344 6,727,585 7,005,734 B2 6,710,405 B2 6,759,692 7,063,975 B2 6,710,463 6,771,478 B2 7,071,537 7,157,338B2 IXYK120N120C3 IXYX120N120C3 Fig. 2. Extended Output Characteristics @ TJ = 25ºC Fig. 1. Output Characteristics @ TJ = 25ºC 240 VGE = 15V 13V 12V 11V 10V 10V 250 9V 160 120 I C - Amperes I C - Amperes 200 VGE = 15V 12V 11V 300 8V 80 9V 200 150 8V 100 7V 7V 40 50 6V 6V 0 0 0 0.5 1 1.5 2 2.5 3 3.5 4 4.5 5 0 2 4 6 8 240 2.2 VGE = 15V 13V 12V 11V 10V 14 16 18 20 150 175 VGE = 15V 2.0 1.8 9V VCE(sat) - Normalized I C - Amperes 12 Fig. 4. Dependence of VCE(sat) on Junction Temperature Fig. 3. Output Characteristics @ TJ = 150ºC 200 10 VCE - Volts VCE - Volts 160 8V 120 7V 80 I C = 240A 1.6 1.4 I C = 120A 1.2 1.0 0.8 40 I C = 60A 6V 0.6 5V 0 0 1 2 3 4 5 6 0.4 -50 7 -25 0 25 VCE - Volts Fig. 5. Collector-to-Emitter Voltage vs. Gate-to-Emitter Voltage 75 100 125 Fig. 6. Input Admittance 280 8 TJ = 25ºC 7 240 200 I C - Amperes 6 V CE - Volts 50 TJ - Degrees Centigrade 5 I C = 240A 4 120A 3 160 120 TJ = 150ºC 25ºC 80 - 40ºC 2 40 60A 1 0 6 7 8 9 10 11 12 VGE - Volts © 2013 IXYS CORPORATION, All Rights Reserved 13 14 15 4.0 4.5 5.0 5.5 6.0 6.5 7.0 VGE - Volts 7.5 8.0 8.5 9.0 9.5 IXYK120N120C3 IXYX120N120C3 Fig. 8. Gate Charge Fig. 7. Transconductance 16 140 TJ = - 40ºC 120 I C = 120A I G = 10mA 12 100 25ºC V GE - Volts g f s - Siemens VCE = 600V 14 80 150ºC 60 40 10 8 6 4 20 2 0 0 0 50 100 150 200 250 300 0 50 100 150 I C - Amperes 250 300 350 400 450 Fig. 10. Reverse-Bias Safe Operating Area Fig. 9. Capacitance 100,000 280 f = 1 MHz 240 C ies 10,000 200 I C - Amperes Capacitance - PicoFarads 200 QG - NanoCoulombs C oes 1,000 160 120 80 TJ = 150ºC RG = 1Ω dv / dt < 10V / ns 40 100 1 0 C res 5 10 15 20 Fig. 11. Maximum Transient0 Thermal Impedance 25 30 35 40 100 300 500 700 900 1100 1300 VCE - Volts VCE - Volts Fig. 11. Maximum Transient Thermal Impedance aaaaa 0.2 Z(th)JC - ºC / W 0.1 0.01 0.001 0.00001 0.0001 0.001 0.01 Pulse Width - Seconds IXYS Reserves the Right to Change Limits, Test Conditions, and Dimensions. 0.1 1 10 IXYK120N120C3 IXYX120N120C3 Fig. 13. Inductive Switching Energy Loss vs. Collector Current Fig. 12. Inductive Switching Energy Loss vs. Gate Resistance 10 18 9 --- 8 I C = 100A VCE = 600V 7 10 5 8 4 10 TJ = 150ºC 5 6 3 6 4 TJ = 25ºC 3 2 2 3 4 5 6 7 8 8 4 I C = 50A 1 12 RG = 1ΩVGE = 15V 9 4 2 2 1 10 2 50 55 60 65 70 RG - Ohms 8 ---- 180 6 10 160 5 8 4 6 RG = 1ΩVGE = 15V 95 0 100 td(off) - - - - 700 TJ = 150ºC, VGE = 15V 600 140 500 I C = 50A I C = 100A 120 400 4 100 300 2 80 200 0 150 60 I C = 50A 2 1 25 200 50 75 100 125 100 1 4 5 6 7 8 9 Fig. 16. Inductive Turn-off Switching Times vs. Collector Current Fig. 17. Inductive Turn-off Switching Times vs. Junction Temperature tfi td(off) - - - - 160 300 150 tfi RG = 1Ω, VGE = 15V 120 240 100 220 80 200 TJ = 25ºC 40 20 55 60 65 70 75 80 85 I C - Amperes © 2013 IXYS CORPORATION, All Rights Reserved 90 320 300 95 VCE = 600V I C = 50A 280 130 260 120 240 110 220 I C = 100A 100 200 180 90 180 160 80 160 140 100 70 25 50 75 100 TJ - Degrees Centigrade 125 140 150 t d(off) - Nanoseconds 260 t d(off) - Nanoseconds 140 60 140 280 VCE = 600V TJ = 150ºC td(off) - - - - 10 RG = 1Ω, VGE = 15V t f i - Nanoseconds 160 t f i - Nanoseconds 3 RG - Ohms 180 50 2 TJ - Degrees Centigrade 320 t d(off) - Nanoseconds 3 t f i - Nanoseconds VCE = 600V Eon - MilliJoules Eoff - MilliJoules 90 800 tfi I C = 100A VCE = 600V 85 200 12 7 80 Fig. 15. Inductive Turn-off Switching Times vs. Gate Resistance 14 Eon 75 I C - Amperes Fig. 14. Inductive Switching Energy Loss vs. Junction Temperature Eoff E on - MilliJoules 6 ---- 6 E on - MilliJoules 12 Eon VCE = 600V 14 7 14 Eoff 16 TJ = 150ºC , VGE = 15V 8 E off - MilliJoules Eon - E off - MilliJoules Eoff IXYK120N120C3 IXYX120N120C3 Fig. 18. Inductive Turn-on Switching Times vs. Gate Resistance Fig. 19. Inductive Turn-on Switching Times vs. Collector Current 160 90 84 tri 140 td(on) - - - - 76 80 TJ = 150ºC, VGE = 15V VCE = 600V 60 80 52 I C = 100A 60 44 40 0 1 2 3 4 5 6 7 8 9 VCE = 600V 70 TJ = 25ºC 32 28 30 31 20 20 50 10 55 60 85 90 95 30 100 100 60 34 40 32 I C = 50A 20 80 I C - Amperes 36 t d(on) - Nanoseconds t r i - Nanoseconds 80 90 I C = 100A 30 70 60 50 TJ = 150ºC 40 TC = 75ºC 0 125 28 150 TJ - Degrees Centigrade Triangular Wave VCE = 600V 30 VGE = 15V 20 RG = 1Ω D = 0.5 10 100 75 110 38 VCE = 600V 75 70 Fig. 21. Maximum Peak Load Current vs. Frequency td(on) - - - - RG = 1Ω, VGE = 15V 50 65 120 40 25 33 TJ = 150ºC I C - Amperes 120 80 34 50 Fig. 20. Inductive Turn-on Switching Times vs. Junction Temperature tri 35 60 RG - Ohms 100 36 RG = 1Ω, VGE = 15V 40 36 I C = 50A 20 td(on) - - - - t d(on) - Nanoseconds 100 t r i - Nanoseconds 68 t d(on) - Nanoseconds t r i - Nanoseconds 120 37 tri Square Wave 0 10 100 1,000 fmax - KiloHertzs IXYS Reserves the Right to Change Limits, Test Conditions, and Dimensions. IXYS REF: IXY_120N120C3(9P-C91) 9-09-13 Disclaimer Notice - Information furnished is believed to be accurate and reliable. However, users should independently evaluate the suitability of and test each product selected for their own applications. Littelfuse products are not designed for, and may not be used in, all applications. Read complete Disclaimer Notice at www.littelfuse.com/disclaimer-electronics.