IXYK140N90C3

IXYK140N90C3 IXYX140N90C3 XPTTM 900V IGBTs GenX3TM VCES IC110 VCE(sat) tfi(typ) High-Speed IGBTs for 20-50 kHz Switching = = ≤ = 900V 140A 2.7V 105ns TO-264 (IXYK) Symbol Test Conditions Maximum Ratings VCES VCGR TJ = 25°C to 175°C TJ = 25°C to 175°C, RGE = 1MΩ 900 900 V V VGES VGEM Continuous Transient ±20 ±30 V V IC25 ILRMS IC110 ICM TC = 25°C (Chip Capability) Terminal Current Limit TC = 110°C TC = 25°C, 1ms 310 160 140 840 A A A A IA EAS TC = 25°C TC = 25°C 70 1 A J SSOA (RBSOA) VGE = 15V, TVJ = 150°C, RG = 1Ω Clamped Inductive Load ICM = 280 @VCE ≤ VCES A PC TC = 25°C 1630 W -55 ... +175 175 -55 ... +175 °C °C °C 300 260 °C °C 1.13/10 Nm/lb.in. 20..120 /4.5..27 N/lb. 10 6 g g TJ TJM Tstg TL TSOLD Maximum Lead Temperature for Soldering 1.6 mm (0.062in.) from Case for 10s Md Mounting Torque (TO-264) FC Mounting Force Weight TO-264 PLUS247 (PLUS247) G C E PLUS247 (IXYX) G Characteristic Values Min. Typ. Max. BVCES IC = 250μA, VGE = 0V 950 VGE(th) IC = 250μA, VCE = VGE 3.5 ICES VCE = VCES, VGE = 0V 5.5 IGES VCE = 0V, VGE = ±20V VCE(sat) IC = IC110, VGE = 15V, Note 1 TJ = 150°C 2.15 2.85 z z z z z z Tab E = Emitter Tab = Collector Optimized for Low Switching Losses Square RBSOA International Standard Packages Positive Thermal Coefficient of Vce(sat) Avalanche Rated High Current Handling Capability Advantages High Power Density Low Gate Drive Requirement Applications z z z ±100 nA z 2.70 V V z z z z © 2013 IXYS CORPORATION, All Rights Reserved E V 25 μA 1.25 mA TJ = 150°C C Features z V G G = Gate C = Collector z Symbol Test Conditions (TJ = 25°C, Unless Otherwise Specified) Tab High Frequency Power Inverters UPS Motor Drives SMPS PFC Circuits Battery Chargers Welding Machines Lamp Ballasts DS100450B(02/13) IXYK140N90C3 IXYX140N90C3 Symbol Test Conditions (TJ = 25°C Unless Otherwise Specified) Characteristic Values Min. Typ. Max. gfs 30 IC = 60A, VCE = 10V, Note 1 Cies Coes Cres VCE = 25V, VGE = 0V, f = 1MHz Qg(on) Qge Qgc IC = IC110, VGE = 15V, VCE = 0.5 • VCES td(on) tri Eon td(off) tfi Eoff td(on) tri Eon td(off) tfi Eoff Inductive load, TJ = 25°C IC = 100A, VGE = 15V VCE = 0.5 • VCES, RG = 1Ω Note 2 Inductive load, TJ = 150°C IC = 100A, VGE = 15V VCE = 0.5 • VCES, RG = 1Ω Note 2 RthJC RthCS TO-264 Outline 52 S 9830 570 185 pF pF pF 330 nC 82 nC 128 nC 40 86 4.3 145 105 4.0 ns ns mJ ns ns mJ 6.5 37 85 6.5 175 125 5.0 ns ns mJ ns ns mJ 0.15 0.092 °C/W °C/W Terminals: 1 = Gate 2,4 = Collector 3 = Emitter PLUS247TM Outline Notes: 1. Pulse test, t ≤ 300μs, duty cycle, d ≤ 2%. 2. Switching times & energy losses may increase for higher VCE(clamp), TJ or RG. Terminals: 1 - Gate 2 - Collector 3 - Emitter Dim. A A1 A2 b b1 b2 C D E e L L1 Q R Millimeter Min. Max. 4.83 5.21 2.29 2.54 1.91 2.16 1.14 1.40 1.91 2.13 2.92 3.12 0.61 0.80 20.80 21.34 15.75 16.13 5.45 BSC 19.81 20.32 3.81 4.32 5.59 6.20 4.32 4.83 Inches Min. Max. .190 .205 .090 .100 .075 .085 .045 .055 .075 .084 .115 .123 .024 .031 .819 .840 .620 .635 .215 BSC .780 .800 .150 .170 .220 0.244 .170 .190 IXYS Reserves the Right to Change Limits, Test Conditions, and Dimensions. IXYS MOSFETs and IGBTs are covered 4,835,592 by one or more of the following U.S. patents: 4,860,072 4,881,106 4,931,844 5,017,508 5,034,796 5,049,961 5,063,307 5,187,117 5,237,481 5,381,025 5,486,715 6,162,665 6,259,123 B1 6,306,728 B1 6,404,065 B1 6,534,343 6,583,505 6,683,344 6,727,585 7,005,734 B2 6,710,405 B2 6,759,692 7,063,975 B2 6,710,463 6,771,478 B2 7,071,537 7,157,338B2 IXYK140N90C3 IXYX140N90C3 Fig. 2. Extended Output Characteristics @ T J = 25ºC Fig. 1. Output Characteristics @ T J = 25ºC 280 350 VGE = 15V 12V 240 VGE = 15V 12V 300 11V 250 160 10V 120 9V 80 IC - Amperes IC - Amperes 200 11V 200 10V 150 9V 100 8V 40 50 8V 6V 0 7V 0 0 0.4 0.8 1.2 1.6 2 2.4 2.8 3.2 3.6 4 0 2 4 6 VGE = 15V 12V 11V IC - Amperes 10V 160 120 9V 80 40 2.5 3 3.5 1.4 18 150 175 = 280A I C = 140A 1.0 0.8 7V 0.6 4 C 1.2 I C = 70A 0.4 4.5 -50 5 -25 0 VCE - Volts 25 50 75 100 125 TJ - Degrees Centigrade Fig. 5. Collector-to-Emitter Voltage vs. Gate-to-Emitter Voltage Fig. 6. Input Admittance 7 200 TJ = 25ºC 180 6 160 140 I C IC - Amperes 5 VCE - Volts 16 1.6 8V 6V 0 2 I 1.8 200 1.5 14 VGE = 15V 2.0 VCE(sat) - Normalized 240 1 12 2.2 280 0.5 10 Fig. 4. Dependence of VCE(sat) on Junction Temperature Fig. 3. Output Characteristics @ T J = 150ºC 0 8 VCE - Volts VCE - Volts = 280A 4 140A 3 120 TJ = 150ºC 25ºC 100 - 40ºC 80 60 70A 40 2 20 1 0 8 9 10 11 12 VGE - Volts © 2013 IXYS CORPORATION, All Rights Reserved 13 14 15 4 4.5 5 5.5 6 6.5 7 7.5 VGE - Volts 8 8.5 9 9.5 10 IXYK140N90C3 IXYX140N90C3 Fig. 8. Gate Charge Fig. 7. Transconductance 120 16 VCE = 450V 14 TJ = - 40ºC, 25ºC, 150ºC 100 I C = 140A I G = 10mA 12 VGE - Volts g f s - Siemens 80 60 40 10 8 6 4 20 2 0 0 0 20 40 60 80 100 120 140 160 180 0 200 50 100 150 200 250 300 350 QG - NanoCoulombs IC - Amperes Fig. 9. Capacitance Fig. 10. Reverse-Bias Safe Operating Area 300 100,000 f = 1 MHz 200 10,000 IC - Amperes Capacitance - PicoFarads 250 Cies 1,000 150 100 Coes TJ = 150ºC 50 Cres 0 100 100 0 5 10 15 20 25 30 35 40 RG = 1Ω dv / dt < 10V / ns 200 300 400 500 600 700 800 900 VCE - Volts VCE - Volts Fig. 11. Maximum Transient Thermal Impedance Z(th)JC - ºC / W 0.1 0.01 0.001 0.0001 0.00001 0.0001 0.001 0.01 Pulse Width - Seconds IXYS Reserves the Right to Change Limits, Test Conditions, and Dimensions. 0.1 1 10 IXYK140N90C3 IXYX140N90C3 Fig. 12. Inductive Switching Energy Loss vs. Gate Resistance Fig. 13. Inductive Switching Energy Loss vs. Collector Current 8 6 9 Eon - Eoff 7 Eoff 8 TJ = 150ºC , VGE = 15V 4 5 3 4 2 3 8 4 6 TJ = 150ºC 3 4 TJ = 25ºC 2 I C = 50A 1 2 3 4 5 6 7 8 9 65 70 75 80 85 90 95 Fig. 15. Inductive Turn-off Switching Times vs. Gate Resistance Eon ---- 240 4 4 3 3 2 1 1 0 75 100 320 TJ = 150ºC, VGE = 15V 300 VCE = 450V 200 280 I 180 C = 50A 260 160 240 140 220 I 120 C = 100A 200 2 I C = 50A 50 td(off) - - - - 0 150 125 100 180 80 160 60 140 1 2 3 4 5 6 7 8 9 TJ - Degrees Centigrade RG - Ohms Fig. 16. Inductive Turn-off Switching Times vs. Collector Current Fig. 17. Inductive Turn-off Switching Times vs. Junction Temperature tfi 225 td(off) - - - - 260 200 240 180 RG = 1Ω , VGE = 15V VCE = 450V 200 220 200 150 180 125 160 TJ = 25ºC 100 140 75 50 55 60 65 70 75 80 85 IC - Amperes © 2013 IXYS CORPORATION, All Rights Reserved 90 95 td(off) - - - - 260 240 VCE = 450V 160 10 220 I C = 50A 140 200 120 180 100 160 I C = 100A 120 80 100 100 60 140 25 50 75 100 TJ - Degrees Centigrade 125 120 150 t d(off) - Nanoseconds 175 t d(off) - Nanoseconds TJ = 150ºC tfi RG = 1Ω , VGE = 15V t f i - Nanoseconds 250 t d(off) - Nanoseconds Eon - MilliJoules 5 t f i - Nanoseconds 6 I C = 100A 25 340 tfi 220 VCE = 450V 0 100 260 7 RG = 1Ω , VGE = 15V 5 t f i - Nanoseconds 60 Fig. 14. Inductive Switching Energy Loss vs. Junction Temperature Eoff 50 55 IC - Amperes 8 6 Eoff - MilliJoules 50 10 RG - Ohms 8 7 2 1 2 1 Eon - MilliJoules 6 Eon - MilliJoules 5 ---- VCE = 450V 7 I C = 100A Eoff - MilliJoules 6 Eon RG = 1Ω , VGE = 15V 5 VCE = 450V Eoff - MilliJoules 10 --- IXYK140N90C3 IXYX140N90C3 Fig. 19. Inductive Turn-on Switching Times vs. Collector Current Fig. 18. Inductive Turn-on Switching Times vs. Gate Resistance 160 tri td(on) - - - - 120 100 I C = 100A 80 48 60 I C 40 = 50A 40 32 20 24 0 t d(on) - Nanoseconds 56 2 3 4 5 6 7 8 9 80 40 60 38 TJ = 25ºC, 150ºC 40 36 20 34 0 16 1 42 VCE = 450V 64 100 td(on) - - - - RG = 1Ω , VGE = 15V 50 10 RG - Ohms 55 60 65 70 75 80 85 90 95 t d(on) - Nanoseconds VCE = 450V 44 tri 72 TJ = 150ºC, VGE = 15V t r i - Nanoseconds 140 t r i - Nanoseconds 120 80 32 100 IC - Amperes Fig. 20. Inductive Turn-on Switching Times vs. Junction Temperature 140 52 tri 120 VCE = 450V I C 48 44 = 100A 80 40 60 36 I C = 50A 40 32 20 t d(on) - Nanoseconds 100 t r i - Nanoseconds td(on) - - - - RG = 1Ω , VGE = 15V 28 0 25 50 75 100 125 24 150 TJ - Degrees Centigrade IXYS Reserves the Right to Change Limits, Test Conditions, and Dimensions. IXYS REF: IXY_140N90C3(91)03-26-12-A Disclaimer Notice - Information furnished is believed to be accurate and reliable. However, users should independently evaluate the suitability of and test each product selected for their own applications. Littelfuse products are not designed for, and may not be used in, all applications. Read complete Disclaimer Notice at www.littelfuse.com/disclaimer-electronics.