IXYL40N250CV1

Advance Technical Information IXYL40N250CV1 High Voltage XPTTM IGBT w/ Diode VCES = IC110 = VCE(sat)  tfi(typ) = 2500V 40A 4.0V 134ns (Electrically Isolated Tab) ISOPLUS i5-PakTM Symbol Test Conditions VCES VCGR TJ = 25°C to 175°C TJ = 25°C to 175°C, RGE = 1M Maximum Ratings VGES VGEM 2500 2500 V V Continuous Transient ±20 ±30 V V IC25 IC110 IF110 ICM TC TC TC TC 80 40 23 380 A A A A SSOA (RBSOA) VGE = 15V, TVJ = 150°C, RG = 1 Clamped Inductive Load ICM = 80 1500 A V PC TC = 25°C 577 W -55 ... +175 175 -55 ... +175 °C °C °C 300 260 °C °C 40..120 / 9..27 N/lb 2500 V~ 8 g = 25°C = 110°C = 110°C = 25°C, 1ms TJ TJM Tstg TL TSOLD Maximum Lead Temperature for Soldering 1.6 mm (0.062in.) from Case for 10s FC Mounting Force VISOL 50/60 Hz, RM, t = 1min Weight G E C G = Gate C = Collector Isolated Tab E = Emitter Features        Silicon Chip on Direct-Copper Bond (DCB) Substrate Isolated Mounting Surface 4500V~ Electrical Isolation High Voltage Package High Blocking Voltage High Peak Current Capability Low Saturation Voltage Advantages Symbol Test Conditions (TJ = 25C, Unless Otherwise Specified) BVCES IC = 250μA, VGE = 0V VGE(th) IC = 250μA, VCE = VGE ICES VCE = VCES, VGE = 0V VCE = 0.8 • VCES IGES VCE = 0V, VGE = ±20V VCE(sat) IC Characteristic Values Min. Typ. Max. 2500 V 3.0 5.0 © 2017 IXYS CORPORATION, All Rights Reserved V 25 μA 5 mA TJ = 125°C = 40A, VGE = 15V, Note 1 TJ = 150°C  3.2 4.4 ±100 nA 4.0 V V  Low Gate Drive Requirement High Power Density Applications      UPS Motor Drives SMPS PFC Circuits High Frequency Power Inverters DS100815B(5/17) IXYL40N250CV1 Symbol Test Conditions (TJ = 25°C Unless Otherwise Specified) Characteristic Values Min. Typ. Max. gfs IC = 40A, VCE = 10V, Note 1 24 RGi Gate Input Resistance Cies Coes Cres VCE = 25V, VGE = 0V, f = 1MHz Qg(on) Qge Qgc IC = 40A, VGE = 15V, VCE = 0.5 • VCES td(on) tri Eon td(off) tfi Eoff td(on) tri Eon td(off) tfi Eoff Inductive load, TJ = 25°C IC = 40A, VGE = 15V VCE = 0.5 • VCES, RG = 1 Note 2 Inductive load, TJ = 150°C IC = 40A, VGE = 15V VCE = 0.5 • VCES, RG = 1 Note 2 RthJC RthCS 42 S 2.2  5470 280 74 pF pF pF 270 28 110 nC nC nC 21 22 11.7 200 134 6.9 ns ns mJ ns ns mJ 21 22 14.7 255 250 11.5 ns ns mJ ns ns mJ 0.15 0.26 °C/W °C/W Reverse Sonic Diode (FRD) Symbol Test Conditions (TJ = 25°C Unless Otherwise Specified) Characteristic Values Min. Typ. Max. VF IF = 40A, VGE = 0V, Note 1 TJ = 150°C 3.4 V V IRM IF = 40A, VGE = 0V, TJ = 150°C -diF/dt = 600A/sVR = 1200V 52 A 210 ns trr 4.0 RthJC Notes: 0.83 °C/W 1. Pulse test, t  300μs, duty cycle, d  2%. 2. Switching times & energy losses may increase for higher VCE(Clamp), TJ or RG. ADVANCE TECHNICAL INFORMATION The product presented herein is under development. The Technical Specifications offered are derived from a subjective evaluation of the design, based upon prior knowledge and experience, and constitute a "considered reflection" of the anticipated result. IXYS reserves the right to change limits, test conditions, and dimensions without notice. IXYS Reserves the Right to Change Limits, Test Conditions, and Dimensions. IXYS MOSFETs and IGBTs are covered 4,835,592 by one or more of the following U.S. patents: 4,860,072 4,881,106 4,931,844 5,017,508 5,034,796 5,049,961 5,063,307 5,187,117 5,237,481 5,381,025 5,486,715 6,162,665 6,259,123 B1 6,306,728 B1 6,404,065 B1 6,534,343 6,583,505 6,683,344 6,727,585 7,005,734 B2 6,710,405 B2 6,759,692 7,063,975 B2 6,710,463 6,771,478 B2 7,071,537 7,157,338B2 IXYL40N250CV1 o Fig. 1. Output Characteristics @ TJ = 25oC Fig. 2. Extended Output Characteristics @ TJ = 25 C 80 VGE = 15V 10V 8V 7V 70 VGE = 15V 6V 14V 13V 12V 11V 10V 400 50 I C - Amperes I C - Amperes 60 500 5V 40 30 300 9V 8V 200 7V 4V 20 6V 100 10 5V 3V 0 4V 0 0 0.5 1 1.5 2 2.5 3 3.5 4 4.5 5 0 5 10 15 VCE - Volts 80 2.2 VGE = 15V 12V 10V 8V 7V 6V 30 VGE = 15V 2.0 I C = 80A 1.8 5V VCE(sat) - Normalized I C - Amperes 60 25 Fig. 4. Dependence of VCE(sat) on Junction Temperature o Fig. 3. Output Characteristics @ TJ = 150 C 70 20 VCE - Volts 50 40 30 4V 20 1.6 I C = 40A 1.4 1.2 1.0 I C = 20A 0.8 10 0.6 3V 0.4 0 0 1 2 3 4 5 6 7 -50 8 -25 0 25 VCE - Volts Fig. 5. Collector-to-Emitter Voltage vs. Gate-to-Emitter Voltage 7 50 75 100 125 150 175 TJ - Degrees Centigrade Fig. 6. Input Admittance 140 o TJ = 25 C 120 6 5 I C - Amperes VCE - Volts 100 I C = 80A 4 80 60 o 40A TJ = 150 C 40 o 25 C 3 o - 40 C 20 20A 0 2 3 4 5 6 7 8 9 10 11 VGE - Volts © 2017 IXYS CORPORATION, All Rights Reserved 12 13 14 15 1.0 1.5 2.0 2.5 3.0 3.5 4.0 VGE - Volts 4.5 5.0 5.5 6.0 6.5 IXYL40N250CV1 Fig. 7. Transconductance Fig. 8. Gate Charge 90 16 o 80 TJ = - 40 C 70 I C = 40A I G = 10mA 12 o 60 25 C V GE - Volts g f s - Siemens VCE = 1250V 14 50 o 150 C 40 30 10 8 6 4 20 2 10 0 0 0 20 40 60 80 100 120 140 160 0 40 80 I C - Amperes 120 160 200 240 280 QG - NanoCoulombs Fig. 9. Capacitance Fig. 10. Reverse-Bias Safe Operating Area 90 10,000 80 70 60 1,000 I C - Amperes Capacitance - PicoFarads Cies C oes 50 40 30 100 Cres f = 1 MHz 10 o 20 TJ = 150 C 10 RG = 1Ω dv / dt < 10V / ns 0 0 5 10 15 20 25 30 35 250 40 500 750 1000 VCE - Volts 1250 1500 1750 2000 2250 2500 VCE - Volts Fig. 11. Maximum Transient Thermal Impedance 1 Z (th)JC - K / W 0.1 0.01 0.001 0.0001 0.00001 0.0001 0.001 0.01 Pulse Width - Seconds IXYS Reserves the Right to Change Limits, Test Conditions, and Dimensions. 0.1 1 10 IXYL40N250CV1 Fig. 12. Inductive Switching Energy Loss vs. Gate Resistance Eoff 35 o TJ = 150 C , VGE = 15V 40 28 35 24 30 25 20 20 15 15 10 10 I C = 40A 5 0 5 6 7 8 9 12 15 10 o 4 5 0 0 20 10 30 40 Fig. 14. Inductive Switching Energy Loss vs. Junction Temperature 28 32 I C = 80A VCE = 1250V 20 16 16 12 12 I C = 40A 8 td(off) 4 0 VCE = 1250V 480 250 420 I C = 40A 200 125 0 150 150 300 100 240 50 180 1 2 3 4 360 350 320 300 tfi 8 9 10 360 td(off) 320 RG = 1Ω, VGE = 15V 200 240 150 250 280 I C = 40A 200 240 I C = 80A 150 200 160 100 160 120 50 200 o TJ = 25 C 100 50 20 30 40 50 60 I C - Amperes © 2017 IXYS CORPORATION, All Rights Reserved 70 80 25 50 75 100 TJ - Degrees Centigrade 125 120 150 t d(off) - Nanoseconds 280 o TJ = 150 C t d(off) - Nanoseconds t f i - Nanoseconds 7 VCE = 1250V VCE = 1250V 250 6 Fig. 17. Inductive Turn-off Switching Times vs. Junction Temperature td(off) RG = 1Ω, VGE = 15V t f i - Nanoseconds tfi 5 RG - Ohms Fig. 16. Inductive Turn-off Switching Times vs. Collector Current 300 360 I C = 80A TJ - Degrees Centigrade 350 540 8 4 100 600 t d(off) - Nanoseconds 20 75 80 o 300 24 50 70 TJ = 150 C, VGE = 15V 28 24 25 tfi 350 Eon - MilliJoules E off - MilliJoules Eon RG = 1ΩVGE = 15V 60 Fig. 15. Inductive Turn-off Switching Times vs. Gate Resistance 400 36 t f i - Nanoseconds Eoff 32 50 I C - Amperes RG - Ohms 36 20 o TJ = 150 C TJ = 25 C 0 4 16 25 8 5 3 30 E on - MilliJoules 25 2 Eon VCE = 1250V 20 E on - MilliJoules I C = 80A 1 Eoff 35 RG = 1ΩVGE = 15V VCE = 1250V 30 E off - MilliJoules Eon E off - MilliJoules 40 Fig. 13. Inductive Switching Energy Loss vs. Collector Current IXYL40N250CV1 Fig. 18. Inductive Turn-on Switching Times vs. Gate Resistance 140 tri 120 td(on) o 50 80 45 70 Fig. 19. Inductive Turn-on Switching Times vs. Collector Current tri 35 I C = 80A 60 30 I C = 40A 40 25 20 0 1 2 3 4 5 6 7 8 9 tri I C = 80A 60 0 14 20 29 23 40 21 I C = 40A 20 19 0 100 125 20 15 10 t d(on) - Nanoseconds t r i - Nanoseconds o TJ = 25 C 30 16 27 75 22 10 25 50 40 20 VCE = 1250V 80 24 TJ = 150 C 18 td(on) RG = 1Ω, VGE = 15V 25 o 50 30 40 50 I C - Amperes Fig. 20. Inductive Turn-on Switching Times vs. Junction Temperature 100 26 20 RG - Ohms 120 VCE = 1250V 60 t r i - Nanoseconds t r i - Nanoseconds 80 28 17 150 TJ - Degrees Centigrade IXYS Reserves the Right to Change Limits, Test Conditions, and Dimensions. 60 70 80 t d(on) - Nanoseconds 40 t d(on) - Nanoseconds VCE = 1250V td(on) RG = 1Ω, VGE = 15V TJ = 150 C, VGE = 15V 100 30 IXYL40N250CV1 Fig. 21. Diode Forward Characteristics Fig. 22. Reverse Recovery Charge vs. -diF/dt 200 10 o TJ = 150 C 9 VR = 1200V 160 IF = 80A 8 o TJ = 25 C 7 QRR (μC) I F (A) 120 o TJ = 150 C 80 40A 6 5 20A 4 40 3 0 2 0 1 2 3 4 5 6 7 8 9 300 400 500 600 700 800 900 1000 1100 1200 1300 1400 -diF/ dt (A/μs) VF (V) Fig. 23. Reverse Recovery Current vs. -diF/dt Fig. 24. Reverse Recovery Time vs. -diF/dt 320 80 IF = 80A o TJ = 150 C o TJ = 150 C VR = 1200V 70 280 VR = 1200V IF = 80A 40A 240 tRR (ns) I RR (A) 60 20A 40A 50 200 20A 40 160 30 120 300 400 500 600 700 800 900 1000 1100 1200 1300 1400 300 400 500 diF/dt (A/μs) 700 800 900 1000 1100 1200 1300 1400 -diF/dt (A/μs) Fig. 25. Dynamic Parameters QRR, IRR vs. Junction Temperature 1.1 600 1 Fig. 26. Maximum Transient Thermal Impedance (Diode) VR = 1200V Z (th)JC - K / W IF = 40A -diF/dt = 600A/μs 1.0 KF 0.9 KF IRR 0.8 0.1 KF QRR 0.7 0.6 0 20 40 60 80 100 TJ (oC) © 2017 IXYS CORPORATION, All Rights Reserved 120 140 160 0.01 0.0001 0.001 0.01 0.1 1 10 Pulse Width - Seconds IXYS REF: IXY_40N250CHV(9T-P628) 5-16-17 IXYL40N250CV1 ISOPLUS i5-PakTM (IXYL) Outline IXYS Reserves the Right to Change Limits, Test Conditions, and Dimensions. Disclaimer Notice - Information furnished is believed to be accurate and reliable. However, users should independently evaluate the suitability of and test each product selected for their own applications. Littelfuse products are not designed for, and may not be used in, all applications. Read complete Disclaimer Notice at www.littelfuse.com/disclaimer-electronics.