IXYL60N450
High Voltage
XPTTM IGBT
VCES = 4500V
IC110 = 38A
VCE(sat) 3.30V
(Electrically Isolated Tab)
ISOPLUS i5-PakTM
Symbol
Test Conditions
Maximum Ratings
VCES
VCGR
TJ = 25°C to 150°C
TJ = 25°C to 150°C, RGE = 1M
VGES
VGEM
4500
4500
V
V
Continuous
Transient
±20
±30
V
V
IC25
IC110
ICM
TC = 25°C
TC = 110°C
TC = 25°C, 1ms
90
38
680
A
A
A
SSOA
(RBSOA)
VGE = 15V, TVJ = 125°C, RG = 4.7
Clamped Inductive Load
ICM = 120
1500
A
V
PC
TC = 25°C
417
W
-55 ... +150
150
-55 ... +150
°C
°C
°C
300
260
°C
°C
40..120 / 9..27
N/lb
4000
V~
8
g
TJ
TJM
Tstg
TL
TSOLD
Maximum Lead Temperature for Soldering
Plastic Body for 10s
FC
Mounting Force
VISOL
50/60 Hz, RM, t = 1min
Weight
G
E
C
G = Gate
C = Collector
Isolated Tab
E = Emitter
Features
Silicon Chip on Direct-Copper Bond
(DCB) Substrate
Isolated Mounting Surface
4000V~ Electrical Isolation
High Blocking Voltage
High Peak Current Capability
Low Saturation Voltage
Advantages
Symbol
Test Conditions
(TJ = 25C, Unless Otherwise Specified)
Characteristic Values
Min.
Typ.
Max.
BVCES
IC
= 250µA, VGE = 0V
4500
VGE(th)
IC
= 250µA, VCE = VGE
3.0
ICES
VCE = 4000V, VGE = 0V
Note 1, TJ = 90°C
IGES
VCE = 0V, VGE = ±20V
VCE(sat)
IC
= 60A, VGE = 15V, Note 1
TJ = 125°C
© 2020 IXYS CORPORATION, All Rights Reserved
V
Applications
5.0
V
25
µA
µA
±300
nA
3.30
V
V
75
2.64
3.46
Low Gate Drive Requirement
High Power Density
Switch-Mode and Resonant-Mode
Power Supplies
Uninterruptible Power Supplies (UPS)
Laser Generators
Capacitor Discharge Circuits
AC Switches
DS100578B(3/20)
IXYL60N450
Symbol Test Conditions
(TJ = 25°C Unless Otherwise Specified)
gfS
Characteristic Values
Min.
Typ.
Max.
IC = 60A, VCE = 10V, Note 1
32
Cies
Coes
VCE = 25V, VGE = 0V, f = 1MHz
Cres
RGi
IC = 60A, VGE = 15V, VCE = 1000V
Qgc
td(on)
tr
td(off)
tf
td(on)
tr
td(off)
tf
S
7530
pF
270
pF
115
pF
5.0
Integrated Gate Input Resistance
Qg(on)
Qge
54
Resistive Switching Times, TJ = 25°C
IC = 60A, VGE = 15V
VCE = 960V, RG = 4.7
Resistive Switching Times, TJ = 125°C
IC = 60A, VGE = 15V
VCE = 960V, RG = 4.7
366
nC
48
nC
138
nC
55
ns
450
ns
450
ns
1360
ns
60
ns
664
ns
510
ns
1070
ns
RthJC
0.30 °C/W
RthCS
0.15
°C/W
Notes:
1. Pulse test, t < 300s, duty cycle, d < 2%.
2. Device must be heatsunk for high-temperature leakage current
measurements to avoid thermal runaway.
IXYS Reserves the Right to Change Limits, Test Conditions, and Dimensions.
IXYS MOSFETs and IGBTs are covered
4,835,592
by one or more of the following U.S. patents: 4,860,072
4,881,106
4,931,844
5,017,508
5,034,796
5,049,961
5,063,307
5,187,117
5,237,481
5,381,025
5,486,715
6,162,665
6,259,123 B1
6,306,728 B1
6,404,065 B1
6,534,343
6,583,505
6,683,344
6,727,585
7,005,734 B2
6,710,405 B2 6,759,692
7,063,975 B2
6,710,463
6,771,478 B2 7,071,537
7,157,338B2
IXYL60N450
Fig. 1. Output Characteristics @ TJ = 25ºC
Fig. 2. Extended Output Characteristics @ TJ = 25ºC
120
V GE = 25V
19V
15V
13V
11V
100
250
11V
I C - Amperes
9V
80
I C - Amperes
V GE = 25V
19V
15V
13V
300
60
7V
40
200
150
9V
100
20
50
7V
5V
0
0
0
0.5
1
1.5
2
2.5
3
3.5
4
4.5
0
5
10
120
2.2
VGE = 25V
19V
15V
13V
11V
25
VGE = 15V
2.0
VCE(sat) - Normalized
1.8
80
I C - Amperes
20
Fig. 4. Dependence of VCE(sat) on
Junction Temperature
Fig. 3. Output Characteristics @ TJ = 125ºC
100
15
VCE - Volts
VCE - Volts
9V
60
7V
40
I C = 120A
1.6
1.4
I C = 60A
1.2
1.0
0.8
I C = 30A
20
0.6
5V
0
0.4
0
1
2
3
4
5
6
-50
-25
0
VCE - Volts
Fig. 5. Collector-to-Emitter Voltage
vs. Gate-to-Emitter Voltage
7
50
75
100
125
150
Fig. 6. Input Admittance
200
180
TJ = 25ºC
6
160
140
4
I C = 120A
3
60A
I C - Amperes
5
V CE - Volts
25
TJ - Degrees Centigrade
120
100
80
60
TJ = 125ºC
25ºC
40
2
30A
- 40ºC
20
1
0
6
7
8
9
10
11
12
VGE - Volts
© 2020 IXYS CORPORATION, All Rights Reserved
13
14
15
3.5
4
4.5
5
5.5
6
6.5
7
VGE - Volts
7.5
8
8.5
9
9.5
IXYL60N450
Fig. 7. Transconductance
Fig. 8. Gate Charge
100
16
90
TJ = - 40ºC
VCE = 1000V
14
I C = 60A
80
I G = 10mA
12
25ºC
60
VGE - Volts
g f s - Siemens
70
125ºC
50
40
10
8
6
30
4
20
2
10
0
0
0
20
40
60
80
100
120
140
160
180
0
200
50
100
I C - Amperes
200
250
300
350
400
Fig. 10. Reverse-Bias Safe Operating Area
Fig. 9. Capacitance
140
100,000
f = 1 MHz
120
Cies
10,000
100
I C - Amperes
Capacitance - PicoFarads
150
QG - NanoCoulombs
1,000
Coes
80
60
40
100
TJ = 125ºC
Cres
20
0
500
10
0
5
10
15
20
25
30
35
40
RG = 4.7Ω
dv / dt < 10V / ns
1000
1500
2000
2500
3000
3500
4000
4500
VCE - Volts
V CE - Volts
Fig. 11. Maximum Transient Thermal Impedance
1
Z (th)JC - K / W
0.1
0.01
0.001
0.0001
0.001
0.01
0.1
1
10
100
Pulse Width - Seconds
IXYS Reserves the Right to Change Limits, Test Conditions, and Dimensions.
IXYS REF: Y_60N450(H9-645) 11-21-13
IXYL60N450
ISOPLUS i5-PakTM (IXYL) Outline
E
Q
A
S
A2
U
R
T
Q1
D
R1
4
1
2
3
L1
L
e1
c
A1
b1
b2
e
1 - Gate
2 - Emitter
3 - Collector
4 - Electrically Isolated 3,600V to pins
© 2020 IXYS CORPORATION, All Rights Reserved
IXYL60N450
Disclaimer Notice - Information furnished is believed to be accurate and reliable. However, users should independently
evaluate the suitability of and test each product selected for their own applications. Littelfuse products are not designed for,
and may not be used in, all applications. Read complete Disclaimer Notice at www.littelfuse.com/disclaimer-electronics.
IXYS Reserves the Right to Change Limits, Test Conditions, and Dimensions.