IXYN100N120C3H1

IXYN100N120C3H1 1200V XPTTM IGBT GenX3TM w/ Diode High-Speed IGBT for 20-50 kHz Switching VCES = = IC110 VCE(sat)  tfi(typ) = 1200V 60A 3.50V 110ns E Symbol Test Conditions VCES VCGR TJ = 25°C to 150°C TJ = 25°C to 150°C, RGE = 1M VGES VGEM SOT-227B, miniBLOC E153432 Maximum Ratings 1200 1200 V V Continuous Transient ±20 ±30 V V IC25 IC110 IF110 ICM TC TC TC TC 140 60 49 420 A A A A IA EAS TC = 25°C TC = 25°C 50 1.2 A J SSOA (RBSOA) VGE = 15V, TVJ = 125°C, RG = 1 Clamped Inductive Load ICM = 200 @VCE  VCES A PC TC = 25°C 690 W -55 ... +150 150 -55 ... +150 °C °C °C 2500 3000 V~ V~ 1.5/13 1.3/11.5 Nm/lb.in. Nm/lb.in. 30 g = 25°C (Chip Capability) = 110°C = 110°C = 25°C, 1ms TJ TJM Tstg E G E C G = Gate, C = Collector, E = Emitter  either emitter terminal can be used as Main or Kelvin Emitter Features     VISOL 50/60Hz IISOL 1mA Md Mounting Torque Terminal Connection Torque t = 1min t = 1s Weight     Optimized for Low Switching Losses Square RBSOA Isolation Voltage 2500V~ Anti-Parallel Sonic Diode Positive Thermal Coefficient of Vce(sat) Avalanche Rated High Current Handling Capability International Standard Package Advantages  Symbol Test Conditions (TJ = 25C, Unless Otherwise Specified) Characteristic Values Min. Typ. Max. BVCES IC = 250A, VGE = 0V 1200 VGE(th) IC = 250A, VCE = VGE 3.0 ICES VCE = VCES, VGE = 0V V 5.0 VCE = 0V, VGE = 20V VCE(sat) IC = 100A, VGE = 15V, Note 1 TJ = 150C V 50 A 3 mA TJ = 125C IGES  100 nA Applications      2.96 3.78 3.50 V V    © 2018 IXYS CORPORATION, All Rights Reserved High Power Density Low Gate Drive Requirement High Frequency Power Inverters UPS Motor Drives SMPS PFC Circuits Battery Chargers Welding Machines Lamp Ballasts DS100407C(4/18) IXYN100N120C3H1 Symbol Test Conditions (TJ = 25°C Unless Otherwise Specified) Characteristic Values Min. Typ. Max. gfs 30 IC = 60A, VCE = 10V, Note 1 Cies Coes Cres VCE = 25V, VGE = 0V, f = 1MHz Qg(on) Qge Qgc IC = IC110, VGE = 15V, VCE = 0.5 • VCES td(on) tri Eon td(off) tfi Eoff td(on) tri Eon td(off) tfi Eoff Inductive load, TJ = 25°C IC = IC110, VGE = 15V VCE = 0.5 • VCES, RG = 1 Note 2 Inductive load, TJ = 125°C IC = IC110, VGE = 15V VCE = 0.5 • VCES, RG = 1 Note 2 RthJC RthCS 50 S 4950 490 120 pF pF pF 260 nC 47 nC 102 nC 27 110 12.00 120 110 4.90 ns ns mJ ns ns mJ 27 116 15.00 146 125 6.15 ns ns mJ ns ns mJ 0.05 0.18 °C/W °C/W Reverse Sonic Diode (FRD) Symbol Test Conditions (TJ = 25C, Unless Otherwise Specified) VF IRM trr IF = 60A, VGE = 0V, Note 1 IF = 60A, VGE = 0V, -diF/dt = 700A/μs, VR = 600V Characteristic Values Min. Typ. Max. 2.7 TJ = 125°C TJ = 125°C 1.95 V V 50 A 235 ns RthJC Notes: 0.52 °C/W 1. Pulse test, t  300μs, duty cycle, d  2%. 2. Switching times & energy losses may increase for higher VCE(clamp), TJ or RG. IXYS Reserves the Right to Change Limits, Test Conditions, and Dimensions. IXYS MOSFETs and IGBTs are covered 4,835,592 by one or more of the following U.S. patents: 4,860,072 4,881,106 4,931,844 5,017,508 5,034,796 5,049,961 5,063,307 5,187,117 5,237,481 5,381,025 5,486,715 6,162,665 6,259,123 B1 6,306,728 B1 6,404,065 B1 6,534,343 6,583,505 6,683,344 6,727,585 7,005,734 B2 6,710,405 B2 6,759,692 7,063,975 B2 6,710,463 6,771,478 B2 7,071,537 7,157,338B2 IXYN100N120C3H1 o o Fig. 1. Output Characteristics @ TJ = 25 C Fig. 2. Extended Output Characteristics @ TJ = 25 C 200 450 VGE = 15V 13V 12V 11V 180 160 350 9V 120 100 8V 80 60 7V 40 20 1.5 2 2.5 3 3.5 4 4.5 5 5.5 12V 11V 200 10V 150 9V 100 6V 1 13V 250 0 0.5 14V 300 I C - Amperes I C - Amperes 140 0 VGE = 15V 400 10V 8V 50 7V 0 6V 6 0 5 10 15 VCE - Volts 200 2.2 VGE = 15V 13V 12V 11V 160 I C = 200A VCE(sat) - Normalized 9V 8V 100 80 7V 60 1.6 1.4 I C = 100A 1.2 1.0 I C = 50A 40 6V 20 0.8 5V 0 1 2 3 4 5 6 7 0.6 -50 8 -25 0 25 VCE - Volts 50 75 100 125 150 175 TJ - Degrees Centigrade Fig. 5. Collector-to-Emitter Voltage vs. Gate-to-Emitter Voltage 8 35 1.8 120 0 30 VGE = 15V 2.0 10V 140 I C - Amperes 25 Fig. 4. Dependence of VCE(sat) on Junction Temperature o Fig. 3. Output Characteristics @ TJ = 150 C 180 20 VCE - Volts Fig. 6. Input Admittance 240 o TJ = 25 C 7 200 160 I C = 200A I C - Amperes VCE - Volts 6 5 4 120 80 o TJ = 150 C 100A o 25 C 40 3 o TJ = - 40 C 50A 0 2 6 7 8 9 10 11 12 VGE - Volts © 2018 IXYS CORPORATION, All Rights Reserved 13 14 15 4 5 6 7 8 VGE - Volts 9 10 11 IXYN100N120C3H1 Fig. 7. Transconductance Fig. 8. Gate Charge 80 16 o TJ = - 40 C 70 60 I C = 100A I G = 10mA 12 o 25 C 50 V GE - Volts g f s - Siemens VCE = 600V 14 o 150 C 40 30 10 8 6 20 4 10 2 0 0 0 20 40 60 80 100 120 140 160 180 0 200 40 80 120 160 200 240 I C - Amperes QG - NanoCoulombs Fig. 9. Capacitance Fig. 10. Reverse-Bias Safe Operating Area 280 10,000 200 1,000 150 I C - Amperes Capacitance - PicoFarads C ies Coes 100 100 C res o 50 TJ = 150 C RG = 1Ω dv / dt < 10V / ns f = 1 MHz 0 10 0 5 10 15 20 25 30 35 200 40 400 600 800 1000 1200 VCE - Volts VCE - Volts Fig. 11. Maximum Transient Thermal Impedance (IGBT) Z (th)JC - K / W 1 0.1 0.01 0.001 0.00001 0.0001 0.001 0.01 Pulse Width - Seconds IXYS Reserves the Right to Change Limits, Test Conditions, and Dimensions. 0.1 1 10 IXYN100N120C3H1 Fig. 13. Inductive Switching Energy Loss vs. Collector Current Fig. 12. Inductive Switching Energy Loss vs. Gate Resistance 8 Eoff VCE = 600V 6 14 4.0 12 5 10 4 8 3 6 2 4 I C = 50A 1 2 3 4 5 6 7 8 9 VCE = 600V 10 3.0 8 2.5 6 o TJ = 25 C 2.0 2 1.0 50 10 55 60 65 70 4.5 14 tfi 12 85 90 95 0 100 2.5 6 4 t f i - Nanoseconds 8 400 VCE = 600V 120 300 I C = 100A I C = 50A 100 I C = 50A 200 80 1.5 t d(off) - Nanoseconds 3.0 td(off) o 10 I C = 100A 500 TJ = 125 C, VGE = 15V 140 VCE = 600V 2.0 100 2 1.0 25 50 75 0 125 100 60 0 1 2 3 4 Fig. 16. Inductive Turn-off Switching Times vs. Collector Current 170 tfi 150 220 170 200 150 tfi td(off) RG = 1Ω, VGE = 15V 9 10 220 td(off) RG = 1Ω, VGE = 15V 200 50 70 75 80 85 I C - Amperes © 2018 IXYS CORPORATION, All Rights Reserved 90 95 130 180 110 160 I C = 50A, 100A 90 140 120 70 120 100 100 50 140 o TJ = 25 C 70 t f i - Nanoseconds 160 90 65 8 25 50 75 TJ - Degrees Centigrade 100 100 125 t d(off) - Nanoseconds o TJ = 125 C 110 t d(off) - Nanoseconds 180 60 7 VCE = 600V 130 55 6 Fig. 17. Inductive Turn-off Switching Times vs. Junction Temperature VCE = 600V 50 5 RG - Ohms TJ - Degrees Centigrade t f i - Nanoseconds 80 Fig. 15. Inductive Turn-off Switching Times vs. Gate Resistance 160 E on - MilliJoules Eoff - MilliJoules Eon RG = 1ΩVGE = 15V 3.5 75 I C - Amperes Fig. 14. Inductive Switching Energy Loss vs. Junction Temperature Eoff 4 1.5 RG - Ohms 4.0 12 o 0 1 Eon RG = 1ΩVGE = 15V TJ = 125 C 2 0 Eoff E on - MilliJoules I C = 100A 14 3.5 E on - MilliJoules E off - MilliJoules Eon o TJ = 125 C , VGE = 15V 4.5 E off - MilliJoules 7 16 IXYN100N120C3H1 Fig. 18. Inductive Turn-on Switching Times vs. Gate Resistance 200 140 70 tri tri td(on) 120 o TJ = 125 C, VGE = 15V 60 50 I C = 100A 80 40 40 30 I C = 50A 0 2 3 4 5 6 7 8 9 100 31 80 30 o TJ = 25 C 60 29 40 28 20 20 1 32 o TJ = 125 C 50 10 55 60 65 70 75 80 85 90 95 t d(on) - Nanoseconds 120 33 td(on) RG = 1Ω, VGE = 15V VCE = 600V t r i - Nanoseconds VCE = 600V t d(on) - Nanoseconds t r i - Nanoseconds 160 Fig. 19. Inductive Turn-on Switching Times vs. Collector Current 27 100 I C - Amperes RG - Ohms Fig. 20. Inductive Turn-on Switching Times vs. Junction Temperature 160 35 tri 140 34 VCE = 600V 33 I C = 100A 100 32 80 31 60 30 40 t d(on) - Nanoseconds 120 t r i - Nanoseconds td(on) RG = 1Ω, VGE = 15V 29 I C = 50A 20 28 0 25 50 75 100 27 125 TJ - Degrees Centigrade IXYS Reserves the Right to Change Limits, Test Conditions, and Dimensions. IXYS REF: IXY_100N120C3(9T-RY92)4-06-18 IXYN100N120C3H1 Fig. 22. Reverse Recovery Charge vs. -diF/dt Fig. 21. Diode Forward Characteristics 8 200 o TJ = 125 C 7 120 6 I F (A) QRR (μC) 160 80 IF = 100A VR = 600V 60A 5 30A o TJ = 125 C 40 4 o TJ = 25 C 0 0 0.5 1 1.5 2 2.5 3 3.5 3 4 200 VF (V) 400 600 800 1000 1200 1400 1600 -diF/ dt (A/μs) Fig. 24. Reverse Recovery Time vs. -diF/dt Fig. 23. Reverse Recovery Current vs. -diF/dt 360 70 o TJ = 125 C TJ = 125 C VR = 600V VR = 600V o 60 320 IF = 100A, 60A, 30A I RR (A) tRR (ns) 50 280 IF = 100A 40 240 60A 30 200 30A 20 160 200 400 600 800 1000 1200 1400 1600 200 400 600 800 Fig. 25. Dynamic Parameters QRR, IRR vs. Junction Temperature 1.1 1000 1200 1400 1600 -diF/dt (A/μs) diF/dt (A/μs) Fig. 26. Maximum Transient Thermal Impedance (Diode) 1 VR = 600V IF = 60A -diF /dt = 700A/μs 1.0 0.8 Z (th)JC - K / W KF 0.9 KF IRR 0.1 0.7 0.6 KF QRR 0.5 0 20 40 60 80 100 TJ (ºC) © 2018 IXYS CORPORATION, All Rights Reserved 120 140 0.01 0.00001 0.0001 0.001 0.01 0.1 Pulse Width - Seconds 1 10 IXYN100N120C3H1 SOT-227 miniBLOC (IXYN) IXYS Reserves the Right to Change Limits, Test Conditions, and Dimensions.