Preliminary Technical Information
650V XPTTM IGBT
GenX3TM
IXYN100N65A3
Ultra Low-Vsat PT IGBT
for up to 5kHz Switching
VCES =
IC110 =
VCE(sat)
tfi(typ) =
650V
100A
1.80V
122ns
E
SOT-227B, miniBLOC
E153432
Symbol
Test Conditions
VCES
VCGR
TJ = 25°C to 175°C
TJ = 25°C to 175°C, RGE = 1M
Maximum Ratings
650
650
V
V
VGES
VGEM
Continuous
Transient
±20
±30
V
V
IC25
IC110
ICM
TC = 25°C
TC = 110°C
TC = 25°C, 1ms
170
100
460
A
A
A
IA
EAS
TC = 25°C
TC = 25°C
50
600
A
mJ
SSOA
(RBSOA)
VGE = 15V, TVJ = 150°C, RG = 2
Clamped Inductive Load
ICM = 200
VCE VCES
A
tsc
(SCSOA)
VGE = 15V, VCE = 360V, TJ = 150°C
RG = 82, Non Repetitive
8
μs
PC
TC = 25°C
50/60Hz
IISOL 1mA
Md
Mounting Torque
Terminal Connection Torque
E
C
G = Gate, C = Collector, E = Emitter
either emitter terminal can be used as
Main or Kelvin Emitter
Features
TJ
TJM
Tstg
VISOL
E
G
t = 1min
t = 1s
Weight
600
W
-55 ... +175
175
-55 ... +175
°C
°C
°C
2500
3000
V~
V~
1.5/13
1.3/11.5
Nm/lb.in
Nm/lb.in
30
g
Advantages
Symbol
Test Conditions
(TJ = 25C, Unless Otherwise Specified)
Characteristic Values
Min.
Typ.
Max.
BVCES
IC
= 250μA, VGE = 0V
650
VGE(th)
IC
= 250μA, VCE = VGE
3.5
ICES
VCE = VCES, VGE = 0V
IGES
VCE = 0V, VGE = ±20V
VCE(sat)
IC
= 70A, VGE = 15V, Note 1
TJ = 150°C
© 2014 IXYS CORPORATION, All Rights Reserved
1.44
1.62
High Power Density
Low Gate Drive Requirement
Applications
V
TJ = 150°C
Optimized for Low Conduction Losses
miniBLOC, with Aluminium Nitride
Isolation
International Standard Package
Isolation Voltage 2500V~
Optimized for up to 5kHz Switching
Square RBSOA
Avalanche Rated
Short Circuit Capability
High Current Handling Capability
6.0
V
25
500
μA
μA
±200
nA
1.80
V
V
UPS
Motor Drives
SMPS
Battery Chargers
Low Frequency Power Inverters
DS100547A(7/14)
IXYN100N65A3
Symbol Test Conditions
(TJ = 25C, Unless Otherwise Specified)
gfs
Characteristic Values
Min.
IC = 60A, VCE = 10V, Note 1
32
Cies
Coes
Cres
VCE = 25V, VGE = 0V, f = 1MHz
Qg(on)
Qge
Qgc
IC = 70A, VGE = 15V, VCE = 0.5 • VCES
td(on)
tri
Eon
td(off)
tfi
Eoff
td(on)
tri
Eon
td(off)
tfi
Eoff
Inductive load, TJ = 25°C
IC = 50A, VGE = 15V
VCE = 400V, RG = 2
Note 2
Inductive load, TJ = 150°C
C = 50A, VGE = 15V
VCE = 400V, RG = 2
Note 2
RthJC
RthCS
Notes:
Typ.
SOT-227B miniBLOC (IXYN)
Max.
52
S
4920
290
100
pF
pF
pF
166
35
73
nC
nC
nC
30
39
2.0
155
122
1.6
ns
ns
mJ
ns
ns
mJ
28
40
2.6
200
160
2.4
ns
ns
mJ
ns
ns
mJ
0.05
0.25 °C/W
°C/W
1. Pulse test, t 300μs, duty cycle, d 2%.
2. Switching times & energy losses may increase for higher VCE(clamp), TJ or RG.
PRELIMANARY TECHNICAL INFORMATION
The product presented herein is under development. The Technical Specifications offered are
derived from a subjective evaluation of the design, based upon prior knowledge and experience, and constitute a "considered reflection" of the anticipated result. IXYS reserves the right
to change limits, test conditions, and dimensions without notice.
IXYS Reserves the Right to Change Limits, Test Conditions, and Dimensions.
IXYS MOSFETs and IGBTs are covered
4,835,592
by one or more of the following U.S. patents: 4,860,072
4,881,106
4,931,844
5,017,508
5,034,796
5,049,961
5,063,307
5,187,117
5,237,481
5,381,025
5,486,715
6,162,665
6,259,123 B1
6,306,728 B1
6,404,065 B1
6,534,343
6,583,505
6,683,344
6,727,585
7,005,734 B2
6,710,405 B2 6,759,692
7,063,975 B2
6,710,463
6,771,478 B2 7,071,537
7,157,338B2
IXYN100N65A3
Fig. 1. Output Characteristics @ TJ = 25ºC
Fig. 2. Extended Output Characteristics @ TJ = 25ºC
140
350
VGE = 15V
13V
12V
11V
120
VGE = 15V
100
80
9V
60
12V
250
10V
I C - Amperes
I C - Amperes
13V
300
40
11V
200
150
10V
100
9V
8V
20
50
7V
0
8V
7V
0
0
0.4
0.8
1.2
1.6
2
2.4
2.8
0
2
4
6
8
140
1.8
VGE = 15V
13V
12V
11V
1.6
VCE(sat) - Normalized
I C - Amperes
80
9V
60
40
8V
0
1.5
20
2
2.5
3
I C = 140A
1.4
1.2
I C = 70A
1.0
0.6
-50
3.5
-25
0
VCE - Volts
25
50
75
100
125
150
175
TJ - Degrees Centigrade
Fig. 5. Collector-to-Emitter Voltage vs.
Gate-to-Emitter Voltage
4.0
18
I C = 35A
7V
6V
1
16
0.8
20
0.5
14
VGE = 15V
10V
100
0
12
Fig. 4. Dependence of VCE(sat) on
Junction Temperature
Fig. 3. Output Characteristics @ TJ = 150ºC
120
10
VCE - Volts
VCE - Volts
Fig. 6. Input Admittance
180
TJ = 25ºC
160
3.5
140
120
I C - Amperes
VCE - Volts
3.0
I C = 140A
2.5
2.0
70A
TJ = 150ºC
25ºC
- 40ºC
100
80
60
40
1.5
20
35A
1.0
0
8
9
10
11
12
VGE - Volts
© 2014 IXYS CORPORATION, All Rights Reserved
13
14
15
5
6
7
8
VGE - Volts
9
10
11
IXYN100N65A3
Fig. 7. Transconductance
Fig. 8. Gate Charge
90
16
TJ = - 40ºC
80
70
25ºC
60
I C = 70A
I G = 10mA
12
150ºC
V GE - Volts
g f s - Siemens
VCE = 325V
14
50
40
30
10
8
6
4
20
2
10
0
0
0
20
40
60
80
100
120
140
160
180
200
220
0
20
40
I C - Amperes
60
80
100
120
140
160
QG - NanoCoulombs
Fig. 9. Capacitance
Fig. 10. Reverse-Bias Safe Operating Area
220
10,000
200
180
Capacitance - PicoFarads
Cies
160
I C - Amperes
1,000
Coes
100
140
120
100
80
60
Cres
TJ = 150ºC
40
f = 1 MHz
RG = 2Ω
dv / dt < 10V / ns
20
0
10
0
5
10
15
20
25
30
35
100
40
200
300
VCE - Volts
Fig. 11. Forward-Bias Safe Operating Area
1000
400
500
600
700
VCE - Volts
1
Fig. 12. Maximum Transient Thermal Impedance
VCE(sat) Limit
100
100µs
10
1
1ms
Z(th)JC - ºC / W
I D - Amperes
25µs
0.1
0.01
0.1
TJ = 175ºC
10ms
TC = 25ºC
Single Pulse
100ms
0.01
1
10
100
1000
VDS - Volts
IXYS Reserves the Right to Change Limits, Test Conditions, and Dimensions.
0.001
0.00001
0.0001
0.001
0.01
0.1
Pulse Width - Seconds
1
10
IXYN100N65A3
Fig. 13. Inductive Switching Energy Loss vs.
Gate Resistance
Eoff
---
TJ = 150ºC , VGE = 15V
5
VCE = 400V
Eoff
6
Eon
----
7
VCE = 400V
5
4
7
3
5
6
4
3
4
TJ = 25ºC
2
I C = 50A
5
TJ = 150ºC
3
3
1
1
4
6
8
10
12
2
0
1
2
50
14
55
60
65
RG - Ohms
----
7
200
6
180
3
4
2
I C = 50A
1
0
75
100
125
Eon - MilliJoules
5
50
220
tfi
200
RG = 2Ω , VGE = 15V
1
100
tfi
420
td(off) - - - -
380
VCE = 400V
340
160
300
140
260
120
2
100
1
150
80
220
I C = 100A
180
140
2
3
4
5
6
7
8
9
10
11
12
13
14
Fig. 18. Inductive Turn-off Switching Times vs.
Junction Temperature
220
260
td(off) - - - -
tfi
200
15
TJ = 25ºC
t f i - Nanoseconds
140
120
200
I C = 50A
160
180
140
160
120
140
I C = 100A
100
120
100
80
80
60
40
50
55
60
65
70
75
80
85
I C - Amperes
© 2014 IXYS CORPORATION, All Rights Reserved
90
95
60
100
100
60
25
50
75
100
TJ - Degrees Centigrade
125
80
150
t d(off) - Nanoseconds
140
t d(off) - Nanoseconds
180
220
VCE = 400V
180
TJ = 150ºC
td(off) - - - -
240
RG = 2Ω , VGE = 15V
220
VCE = 400V
t f i - Nanoseconds
95
I C = 50A
3
180
100
90
RG - Ohms
Fig. 17. Inductive Turn-off Switching Times vs.
Collector Current
160
85
TJ = 150ºC, VGE = 15V
TJ - Degrees Centigrade
240
80
t d(off) - Nanoseconds
220
4
25
75
Fig. 16. Inductive Turn-off Switching Times vs.
Gate Resistance
I C = 100A
VCE = 400V
5
Eoff - MilliJoules
Eon
RG = 2Ω , VGE = 15V
8
t f i - Nanoseconds
Eoff
6
70
I C - Amperes
Fig. 15. Inductive Switching Energy Loss vs.
Junction Temperature
7
E on - MilliJoules
I C = 100A
2
8
RG = 2Ω , VGE = 15V
9
E on - MilliJoules
E off - MilliJoules
Eon -
7
11
Eoff - MilliJoules
6
Fig. 14. Inductive Switching Energy Loss vs.
Collector Current
IXYN100N65A3
Fig. 19. Inductive Turn-on Switching Times vs.
Gate Resistance
180
tri
160
td(on) - - - -
84
140
76
120
TJ = 150ºC, VGE = 15V
VCE = 400V
60
I C = 100A
100
52
80
44
I C = 50A
60
36
40
28
20
3
4
5
6
7
8
9
10
11
12
13
14
tri
60
30
40
28
20
26
55
60
65
70
75
80
85
90
95
24
100
34
I C = 100A
32
80
30
60
28
I C = 50A
40
26
20
24
0
75
32
TJ = 150ºC
38
100
50
80
36
VCE = 400V
25
34
100
125
t d(on) - Nanoseconds
t r i - Nanoseconds
td(on) - - - -
RG = 2Ω , VGE = 15V
120
TJ = 25ºC
I C - Amperes
Fig. 21. Inductive Turn-on Switching Times vs.
Junction Temperature
140
36
VCE = 400V
100
50
15
RG - Ohms
160
td(on) - - - -
RG = 2Ω , VGE = 15V
0
20
2
tri
38
t d(on) - Nanoseconds
120
t r i - Nanoseconds
68
t d(on) - Nanoseconds
t r i - Nanoseconds
140
Fig. 20. Inductive Turn-on Switching Times vs.
Collector Current
22
150
TJ - Degrees Centigrade
IXYS Reserves the Right to Change Limits, Test Conditions, and Dimensions.
IXYS REF: IXY_100N65A3(7D) 7-16-13
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