IXYN100N65C3H1

Preliminary Technical Information XPTTM 650V GenX3TM w/ Sonic Diode IXYN100N65C3H1 VCES = IC110 = VCE(sat)  tfi(typ) = Extreme Light Punch Through IGBT for 20-60kHz Switching 650V 90A 2.3V 60ns SOT-227B, miniBLOC E153432 Symbol Test Conditions Maximum Ratings VCES VCGR TJ = 25°C to 175°C TJ = 25°C to 175°C, RGE = 1M 650 650 V V VGES VGEM Continuous Transient ±20 ±30 V V IC25 IC110 IF110 ICM TC TC TC TC 160 90 50 420 A A A A IA EAS TC = 25°C TC = 25°C 50 600 A mJ SSOA (RBSOA) VGE = 15V, TVJ = 150°C, RG = 3 Clamped Inductive Load ICM = 200 VCE  VCES A 7 μs 600 W -55 ... +175 175 -55 ... +175 °C °C °C 2500 3000 V~ V~ 1.5/13 1.3/11.5 Nm/lb.in Nm/lb.in = 25°C = 110°C = 110°C = 25°C, 1ms tsc (SCSOA) VGE = 15V, VCE = 360V, TJ = 150°C RG = 10, Non Repetitive PC TC = 25°C TJ TJM Tstg VISOL 50/60Hz IISOL 1mA Md Mounting Torque Terminal Connection Torque t = 1min t = 1s Weight g Symbol Test Conditions (TJ = 25C, Unless Otherwise Specified) Characteristic Values Min. Typ. Max. BVCES IC = 250A, VGE = 0V 650 VGE(th) IC = 250A, VCE = VGE 3.5 ICES VCE = VCES, VGE = 0V VCE(sat) IC G = Gate, C = Collector, E = Emitter  either emitter terminal can be used as Main or Kelvin Emitter Features International Standard Package miniBLOC, with Aluminium Nitride Isolation  2500V~ Isolation Voltage  Anti-Parallel Sonic Diode  Optimized for 20-60kHz Switching  Square RBSOA  Short Circuit Capability  High Current Handling Capability  Advantages    6.0 = 70A, VGE = 15V, Note 1 TJ = 150C © 2014 IXYS CORPORATION, All Rights Reserved V 50 A 3 mA 100 1.8 2.2 2.3 High Power Density Low Gate Drive Requirement Applications V TJ = 150C VCE = 0V, VGE = 20V E C  30 IGES E G nA V V         Power Inverters UPS Motor Drives SMPS PFC Circuits Battery Chargers Welding Machines Lamp Ballasts High Frequency Power Inverters DS100568B(10/14) IXYN100N65C3H1 Symbol Test Conditions (TJ = 25°C Unless Otherwise Specified) gfs Cies Coes Cres Qg(on) Qge Qgc td(on) tri Eon td(off) tfi Eoff td(on) tri Eon td(off) tfi Eoff Characteristic Values Min. Typ. Max. IC = 60A, VCE = 10V, Note 1 30 VCE = 25V, VGE = 0V, f = 1MHz 55 S 4800 475 102 pF pF pF 172 nC 30 nC 80 nC 23 42 1.30 107 60 0.83 ns ns mJ ns ns mJ IC = 100A, VGE = 15V, VCE = 0.5 • VCES Inductive load, TJ = 25°C IC = 50A, VGE = 15V VCE = 400V, RG = 3 Note 2 Inductive load, TJ = 150°C IC = 50A, VGE = 15V VCE = 400V, RG = 3 Note 2 RthJC RthCS SOT-227B miniBLOC (IXYN) 1.30 24 38 2.55 134 66 1.15 ns ns mJ ns ns mJ 0.05 0.25 °C/W °C/W Reverse Sonic Diode (FRD) Symbol Test Conditions (TJ = 25°C Unless Otherwise Specified) Characteristic Values Min. Typ. Max. VF IF = 100A, VGE = 0V, Note 1 IRM IF = 100A, VGE = 0V, TJ = 150C, -diF/dt = 1500A/sVR = 400V trr 1.7 1.8 TJ = 150C V V 95 A 100 ns 0.42 C/W RthJC Notes: 2.3 1. Pulse test, t  300μs, duty cycle, d  2%. 2. Switching times & energy losses may increase for higher VCE(clamp), TJ or RG. PRELIMANARYTECHNICALINFORMATION The product presented herein is under development. The Technical Specifications offered are derived from a subjective evaluation of the design, based upon prior knowledge and experience, and constitute a "considered reflection" of the anticipated result. IXYS reserves the right to change limits, test conditions, and dimensions without notice. IXYS Reserves the Right to Change Limits, Test Conditions, and Dimensions. IXYS MOSFETs and IGBTs are covered 4,835,592 by one or more of the following U.S. patents: 4,860,072 4,881,106 4,931,844 5,017,508 5,034,796 5,049,961 5,063,307 5,187,117 5,237,481 5,381,025 5,486,715 6,162,665 6,259,123 B1 6,306,728 B1 6,404,065 B1 6,534,343 6,583,505 6,683,344 6,727,585 7,005,734 B2 6,710,405 B2 6,759,692 7,063,975 B2 6,710,463 6,771,478 B2 7,071,537 7,157,338B2 IXYN100N65C3H1 Fig. 1. Output Characteristics @ TJ = 25ºC Fig. 2. Extended Output Characteristics @ TJ = 25ºC 140 VGE = 15V 13V 12V 11V 120 300 10V VGE = 15V 13V 12V 250 11V 200 80 9V I C (A) I C (A) 100 60 8V 40 20 10V 150 100 9V 50 8V 7V 0 7V 0 0 0.5 1 1.5 2 2.5 3 3.5 0 2 4 6 8 140 2.0 VGE = 15V 13V 12V 11V VCE(sat) - Normalized 9V 80 8V 60 40 7V 20 16 18 20 150 175 I C = 140A 1.6 1.4 I C = 70A 1.2 1.0 0.8 I C = 35A 6V 0 0.6 0 0.5 1 1.5 2 2.5 3 3.5 4 -50 -25 0 25 VCE - Volts 50 75 100 125 TJ - Degrees Centigrade Fig. 5. Collector-to-Emitter Voltage vs. Gate-to-Emitter Voltage 6.0 5.5 Fig. 6. Input Admittance 200 TJ = 25ºC 180 5.0 160 4.5 140 4.0 120 3.5 I C (A) VCE (V) 14 VGE = 15V 1.8 10V 100 I C (A) 12 Fig. 4. Dependence of VCE(sat) on Junction Temperature Fig. 3. Output Characteristics @ TJ = 150ºC 120 10 VCE - Volts VCE - Volts I C = 140A 3.0 100 TJ = 150ºC 25ºC - 40ºC 80 2.5 70A 2.0 60 40 1.5 35A 1.0 20 0.5 0 7 8 9 10 11 12 VGE (V) © 2014 IXYS CORPORATION, All Rights Reserved 13 14 15 4 5 6 7 8 VGE (V) 9 10 11 IXYN100N65C3H1 Fig. 7. Transconductance Fig. 8. Gate Charge 90 16 TJ = - 40ºC 80 70 25ºC 12 150ºC 10 VGE (V) 60 g f s (S) VCE = 325V 14 50 40 I C = 70A I G = 10mA 8 6 30 4 20 2 10 0 0 0 20 40 60 80 100 120 140 160 180 200 0 20 40 60 80 100 120 140 160 I C (A) QG (nC) Fig. 9. Capacitance Fig. 10. Reverse-Bias Safe Operating Area 180 10,000 200 Cies I C (A) Capacitance (pF) 160 1,000 Coes 120 80 100 Cres TJ = 150ºC 40 RG = 3Ω dv / dt < 10V / ns f = 1 MHz 10 0 0 5 10 15 20 25 30 35 40 100 200 300 400 500 600 700 VCE (V) VCE (V) Fig. 11. Forward-Bias Safe Operating Area Fig. 12. Maximum Transient Thermal Impedance (IGBT) 1000 1 VCE(sat) Limit I D (A) 25µs 100µs 10 1ms 1 Z (th)JC - ºC / W 100 0.1 0.01 TJ = 175ºC TC = 25ºC Single Pulse 10ms 100ms DC 0.1 1 10 100 1000 VDS (V) IXYS Reserves the Right to Change Limits, Test Conditions, and Dimensions. 0.001 0.00001 0.0001 0.001 0.01 Pulse Width (s) 0.1 1 10 IXYN100N65C3H1 Fig. 13. Inductive Switching Energy Loss vs. Gate Resistance 6 Eoff 5 Eon - 4.0 12 --- Eoff 3.5 10 TJ = 150ºC , VGE = 15V 8 E off (mJ) 4 6 5 2.0 4 TJ = 150ºC 1.5 3 1.0 I C = 50A 1 2 0 6 9 12 15 18 21 24 27 30 2 TJ = 25ºC 0.5 1 0.0 0 3 50 33 55 60 65 70 Fig. 15. Inductive Switching Energy Loss vs. Junction Temperature Eoff 5 Eon 160 4 2 3 0 100 1 2 0 75 100 700 600 140 500 120 400 I C = 100A 300 I C = 50A 200 60 100 40 1 150 125 800 td(off) - - - - 80 I C = 50A 0 3 6 9 12 15 18 21 24 27 30 33 RG (Ω) TJ (ºC) Fig. 17. Inductive Turn-off Switching Times vs. Collector Current tfi Fig. 18. Inductive Turn-off Switching Times vs. Junction Temperature 160 180 td(off) - - - - tfi 140 160 RG = 3Ω , VGE = 15V VCE = 400V td(off) - - - - 150 140 RG = 3Ω , VGE = 15V VCE = 400V 120 130 140 80 100 120 I C = 100A 80 110 I C = 50A 100 TJ = 25ºC 60 80 40 50 55 60 65 70 75 80 85 I C (A) © 2014 IXYS CORPORATION, All Rights Reserved 90 95 60 100 60 100 40 90 20 25 50 75 100 TJ (ºC) 125 80 150 t d(off) (ns) 120 t d(off) (ns) TJ = 150ºC 100 t f i (ns) 120 t f i (ns) 95 VCE = 400V 100 140 90 t d(off) (ns) 3 E on (mJ) I C = 100A t f i (ns) 5 160 85 TJ = 150ºC, VGE = 15V VCE = 400V Eoff (mJ) tfi 180 6 4 50 80 Fig. 16. Inductive Turn-off Switching Times vs. Gate Resistance 200 7 ---- RG = 3Ω , VGE = 15V 25 75 I C (A) RG (Ω) 6 Eon (mJ) 2 Eon (mJ) 6 7 2.5 I C = 100A 3 ---- VCE = 400V 3.0 4 Eon 8 RG = 3Ω , VGE = 15V VCE = 400V E off (mJ) Fig. 14. Inductive Switching Energy Loss vs. Collector Current IXYN100N65C3H1 Fig. 19. Inductive Turn-on Switching Times vs. Gate Resistance 240 tri 200 120 140 100 120 Fig. 20. Inductive Turn-on Switching Times vs. Collector Current tri td(on) - - - - TJ = 150ºC, VGE = 15V td(on) - - - 30 RG = 3Ω , VGE = 15V VCE = 400V VCE = 400V 120 60 I C = 100A 80 100 t r i (ns) 80 28 80 26 TJ = 150ºC 40 60 20 40 0 20 TJ = 25ºC t d(on) (ns) 160 t d(on) (ns) t r i (ns) 32 24 I C = 50A 40 0 3 6 9 12 15 18 21 24 27 30 33 22 50 55 60 RG (Ω) 140 tri 120 VCE = 400V td(on) - - - - 90 95 20 100 90 32 80 70 28 60 24 I C = 50A 40 20 0 100 50 TJ = 150ºC 40 TC = 75ºC 30 VCE = 400V 20 VGE = 15V 10 RG = 3Ω D = 0.5 22 20 75 Triangular Wave 60 I C (A) 26 t d(on) (ns) t r i (ns) 85 Fig. 22. Maximum Peak Load Current vs. Frequency 80 50 80 30 I C = 100A 25 75 100 34 RG = 3Ω , VGE = 15V 100 70 I C (A) Fig. 21. Inductive Turn-on Switching Times vs. Junction Temperature 160 65 125 18 150 TJ (ºC) IXYS Reserves the Right to Change Limits, Test Conditions, and Dimensions. Square Wave 0 10 100 fmax (kH) 1,000 IXYN100N65C3H1 Fig. 24. Typ. Reverse Recovery Charge Qrr vs. -diF/dt Fig. 23. Typ. Forward characteristics 20 200 TVJ = 150ºC 175 VR = 400V 16 150 TVJ = 150ºC Q RM [µC] 125 I F [A] IF = 200A TVJ = 25ºC 100 75 12 100A 8 50A 50 4 25 0 0 0.5 1 1.5 2 2.5 0 1000 3 1200 VF - [V] 140 1600 1800 2000 -diF/ dt [A/µs] Fig. 26. Typ. Recovery Time trr vs. -diF/dt Fig. 25. Typ. Peak Reverse Current IRM vs. -diF/dt 350 IF = 200A TVJ = 150ºC 120 1400 TVJ = 150ºC 300 VR = 400V VR = 400V 250 100A trr [ns] I RM [A] 100 50A 80 200 IF = 200A 150 100A 60 50A 100 40 1000 1200 1400 1600 1800 50 1000 2000 diF/dt [A/µs] 1200 1400 1600 1800 2000 -diF/dt [A/µs] Fig. 28. Maximum Transient Thermal Impedance ( Diode) Fig. 27. Typ. Recovery Energy Erec vs. -diF/dt 1 5 TVJ = 150ºC IF = 200A VR = 400V 3 Z (th)JC - ºC / W E rec [mJ] 4 100A 2 0.1 0.01 1 0 1000 50A 1200 1400 1600 -diF/dt [A/µs] © 2014 IXYS CORPORATION, All Rights Reserved 1800 2000 0.001 0.0001 0.001 0.01 0.1 1 10 Pulse Width [s] IXYS REF: IXY_100N65C3(7D-Y42) 10-14-14 Disclaimer Notice - Information furnished is believed to be accurate and reliable. However, users should independently evaluate the suitability of and test each product selected for their own applications. Littelfuse products are not designed for, and may not be used in, all applications. Read complete Disclaimer Notice at www.littelfuse.com/disclaimer-electronics.