IXYN110N120A4

IXYN110N120A4 1200V XPTTM IGBT GenX4TM VCES = IC110 = VCE(sat)  tfi(typ) = Ultra Low-Vsat PT IGBT for up to 5kHz Switching 1200V 110A 1.80V 300ns SOT-227B, miniBLOC E153432 Symbol Test Conditions VCES VCGR TJ = 25°C to 175°C TJ = 25°C to 175°C, RGE = 1M VGES VGEM E Maximum Ratings 1200 1200 V V Continuous Transient ±20 ±30 V V IC25 ILRMS IC110 ICM TC = 25°C (Chip Capability) Terminal Current Limit TC = 110°C TC = 25°C, 1ms 275 200 110 950 A A A A SSOA (RBSOA) VGE = 15V, TVJ = 125°C, RG = 2 Clamped Inductive Load ICM = 220 0.8 • V CES A V PC TC = 25°C 830 W -55 ... +175 175 -55 ... +175 °C °C °C 2500 3000 V~ V~ 1.5/13 1.3/11.5 Nm/lb.in Nm/lb.in 30 g TJ TJM Tstg VISOL 50/60Hz IISOL 1mA Md Mounting Torque Terminal Connection Torque t = 1min t = 1s Weight G E C G = Gate, C = Collector, E = Emitter  either emitter terminal can be used as Main or Kelvin Emitter Features       miniBLOC, with Aluminium Nitride Isolation International Standard Package Isolation Voltage 2500V~ Optimized for Low Conduction Losses Positive Thermal Coefficient of Vce(sat) High Current Handling Capability Advantages   Symbol Test Conditions (TJ = 25C, Unless Otherwise Specified) BVCES IC = 250A, VGE = 0V VGE(th) IC = 3mA, VCE = VGE ICES VCE = VCES, VGE = 0V Characteristic Values Min. Typ. Max. 1200 6.5 V 25 500 A A 200 nA TJ = 125C IGES VCE = 0V, VGE = 20V VCE(sat) IC = IC110, VGE = 15V, Note 1 TJ = 150C ©2020 Littelfuse, Inc. Applications V 4.5 1.45 1.60 1.80 High Power Density Low Gate Drive Requirement V V          Power Inverters UPS Motor Drives SMPS PFC Circuits Battery Chargers Welding Machines Lamp Ballasts Inrush Current Protection Circuits DS100982A(8/20) IXYN110N120A4 Symbol Test Conditions (TJ = 25°C Unless Otherwise Specified) gfs Characteristic Values Min. Typ. Max. IC = 60A, VCE = 10V, Note 1 48 Cies Coes Cres VCE = 25V, VGE = 0V, f = 1MHz Qg(on) Qge Qgc IC = IC110, VGE = 15V, VCE = 0.5 • VCES td(on) tri Eon td(off) tfi Eoff td(on) tri Eon td(off) tfi Eoff Inductive load, TJ = 25°C IC = 50A, VGE = 15V VCE = 0.5 • VCES, RG = 2 Note 2 Inductive load, TJ = 150°C IC = 50A, VGE = 15V VCE = 0.5 • VCES, RG = 2 Note 2 RthJC RthCS Notes: 80 S 6030 340 225 pF pF pF 305 nC 58 nC 148 nC 42 36 2.5 550 300 8.4 ns ns mJ ns ns mJ 35 33 4.4 700 590 14.0 ns ns mJ ns ns mJ 0.05 0.18 °C/W °C/W 1. Pulse test, t  300µs, duty cycle, d  2%. 2. Switching times & energy losses may increase for higher VCE(clamp), TJ or RG. Littelfuse reserves the right to change limits, test conditions, and dimensions. IXYS MOSFETs and IGBTs are covered 4,835,592 by one or more of the following U.S. patents: 4,860,072 4,881,106 4,931,844 5,017,508 5,034,796 5,049,961 5,063,307 5,187,117 5,237,481 5,381,025 5,486,715 6,162,665 6,259,123 B1 6,306,728 B1 6,404,065 B1 6,534,343 6,583,505 6,683,344 6,727,585 7,005,734 B2 6,710,405 B2 6,759,692 7,063,975 B2 6,710,463 6,771,478 B2 7,071,537 7,157,338B2 IXYN110N120A4 Fig. 2. Extended Output Characteristics @ TJ = 25oC Fig. 1. Output Characteristics @ TJ = 25oC 10V 700 9V 120 8V 80 40 7V 0.5 1 1.5 2 13V 500 12V 400 11V 300 10V 200 9V 100 8V 7V 6V 0 14V 600 I C - Amperes I C - Amperes 160 0 VGE = 15V 800 VGE = 15V 13V 12V 11V 200 0 2.5 0 5 15 20 25 VCE - Volts Fig. 3. Output Characteristics @ TJ = 150oC Fig. 4. Dependence of VCE(sat) on Junction Temperature 1.8 VGE = 15V 13V 12V 11V 10V VGE = 15V 1.6 I C = 220A 160 VCE(sat) - Normalized 200 I C - Amperes 10 VCE - Volts 9V 120 8V 80 1.4 1.2 I C = 110A 1.0 7V 40 0.8 I C = 55A 6V 0 0.6 0 0.5 1 1.5 2 2.5 3 3.5 -50 -25 0 VCE - Volts 50 75 100 125 150 175 TJ - Degrees Centigrade Fig. 5. Collector-to-Emitter Voltage vs. Gate-to-Emitter Voltage 4.0 25 Fig. 6. Input Admittance 250 o TJ = 25 C 3.5 200 I C - Amperes VCE - Volts 3.0 I C = 220A 2.5 150 100 o TJ = 150 C 2.0 o 110A 25 C o - 40 C 50 1.5 55A 1.0 0 7 8 9 10 11 VGE - Volts ©2020 Littelfuse, Inc. 12 13 14 15 4 5 6 7 VGE - Volts 8 9 10 IXYN110N120A4 Fig. 7. Transconductance Fig. 8. Gate Charge 140 16 o TJ = - 40 C VCE = 600V 14 120 I C = 110A I G = 10mA 12 100 VGE - Volts g f s - Siemens o 25 C 80 o 150 C 60 40 10 8 6 4 20 2 0 0 0 40 80 120 160 200 0 240 50 100 I C - Amperes 150 200 250 300 QG - NanoCoulombs Fig. 9. Capacitance Fig. 10. Reverse-Bias Safe Operating Area 10,000 240 200 Capacitance - PicoFarads C ies I C - Amperes 160 1,000 120 80 C oes o TJ = 125 C 40 f = 1 MHz RG = 2Ω dv / dt < 10V / ns C res 0 100 0 5 10 15 20 VCE - Volts 1 25 30 35 200 40 300 400 500 Fig. 11. Maximum Transient Thermal Impedance 600 700 800 900 1000 1100 1200 VCE - Volts Fig. 11. Maximum Transient Thermal Impedance aaa 0.4 Z(th)JC - K / W 0.1 0.01 0.001 0.0001 0.00001 0.0001 0.001 0.01 Pulse Width - Seconds Littelfuse reserves the right to change limits, test conditions, and dimensions. 0.1 1 10 IXYN110N120A4 Fig. 12. Inductive Switching Energy Loss vs. Collector Current Eoff 24 Eoff o TJ = 150 C RG = 2Ω,VGE = 15V 18 8 VCE = 600V 10 Eon RG = 2Ω,VGE = 15V 20 8 I C = 50A 6 10 4 16 6 o TJ = 150 C 12 4 E on - MilliJoules 14 E on - MilliJoules Eoff - MilliJoules Eon 10 Eoff - MilliJoules 22 Fig. 13. Inductive Switching Energy Loss vs. Collector-Emitter Voltage o TJ = 25 C 6 2 20 34 30 40 60 70 8 0 4 80 400 600 Eon 16 28 14 24 12 20 Eoff 18 8 14 6 I C = 50A 10 6 3 4 5 6 7 8 9 E off - MilliJoules 10 16 8 12 6 4 4 2 0 4 I C = 50A 2 25 50 75 1400 800 520 600 I C = 100A 480 400 440 200 6 RG - Ohms 7 8 9 10 t f i - Nanoseconds t f i - Nanoseconds 560 1000 VCE = 600V o TJ = 150 C 1100 900 600 800 500 700 400 600 300 500 o TJ = 25 C 200 400 100 20 30 40 50 60 I C - Amperes 70 80 90 300 100 t d(off) - Nanoseconds I C = 50A t d(off) - Nanoseconds 1000 td(off) RG = 2Ω,VGE = 15V 700 600 ©2020 Littelfuse, Inc. tfi 800 1200 VCE = 600V 5 0 150 125 Fig. 17. Inductive Turn-off Switching Times vs. Collector Current 900 td(off) o TJ = 150 C, VGE = 15V 4 100 TJ - Degrees Centigrade Fig. 16. Inductive Turn-off Switching Times vs. Gate Resistance 3 10 I C = 100A RG - Ohms tfi 14 12 VCE = 600V 8 10 Eon 0 1000 E on - MilliJoules I C = 100A Eon - MilliJoules 22 2 900 RG = 2Ω,VGE = 15V VCE = 600V 640 800 Fig. 15. Inductive Switching Energy Loss vs. Junction Temperature o 680 700 Fig. 14. Inductive Switching Energy Loss vs. Gate Resistance 26 E off - MilliJoules 500 VCE - Volts TJ = 150 C , VGE = 15V 2 2 o TJ = 25 C I C - Amperes Eoff 30 50 2 IXYN110N120A4 Fig. 18. Inductive Turn-off Switching Times vs. Junction Temperature 700 tfi 160 td(off) 300 90 80 VCE = 600V 100 70 I C = 100A 80 60 60 50 40 40 I C = 50A 400 20 200 25 50 75 100 300 150 125 30 0 20 2 3 4 5 Fig. 20. Inductive Turn-on Switching Times vs. Collector Current tri 120 60 tri 100 52 o TJ = 150 C 40 t r i - Nanoseconds t r i - Nanoseconds 28 0 30 10 60 td(on) 55 50 60 70 80 90 20 100 I C - Amperes 80 50 I C = 100A 60 45 40 40 I C = 50A 20 t d(on) - Nanoseconds 36 o TJ = 25 C t d(on) - Nanoseconds 44 20 9 VCE = 600V 60 20 8 RG = 2Ω, VGE = 15V VCE = 600V 40 7 Fig. 21. Inductive Turn-on Switching Times vs. Junction Temperature td(on) RG = 2Ω, VGE = 15V 80 6 RG - Ohms TJ - Degrees Centigrade 100 t d(on) - Nanoseconds 500 I C = 100A t d(off) - Nanoseconds 400 600 t r i - Nanoseconds 120 I C = 50A td(on) o 700 500 100 TJ = 150 C, VGE = 15V VCE = 600V t f i - Nanoseconds tri 140 RG = 2Ω, VGE = 15V 600 800 Fig. 19. Inductive Turn-on Switching Times vs. Gate Resistance 35 0 25 50 75 100 125 30 150 TJ - Degrees Centigrade Littelfuse reserves the right to change limits, test conditions, and dimensions. IXYS REF: IXY_110N120A4 (N8-RY90) 7-29-19 IXYN110N120A4 SOT-227B miniBLOC (IXYN) ©2020 Littelfuse, Inc. IXYN110N120A4 Disclaimer Notice - Information furnished is believed to be accurate and reliable. However, users should independently evaluate the suitability of and test each product selected for their own applications. Littelfuse products are not designed for, and may not be used in, all applications. Read complete Disclaimer Notice at www.littelfuse.com/disclaimer-electronics. Littelfuse reserves the right to change limits, test conditions, and dimensions.