IXYN50N170CV1

Advance Technical Information IXYN50N170CV1 High Voltage XPTTM IGBT w/ Diode VCES = IC110 = VCE(sat)  tfi(typ) = 1700V 50A 3.7V 95ns E SOT-227B, miniBLOC E153432 Symbol Test Conditions Maximum Ratings VCES VCGR TJ = 25°C to 175°C TJ = 25°C to 175°C, RGE = 1M VGES VGEM Continuous Transient IC25 IC110 IF110 ICM TC TC TC TC SSOA (RBSOA) VGE = 15V, TVJ = 150°C, RG = 1 Clamped Inductive Load PC TC = 25°C = 25°C = 110°C = 110°C = 25°C, 1ms TJ TJM Tstg VISOL Md 50/60Hz IISOL 1mA t = 1min t = 1s Mounting Torque Terminal Connection Torque Weight E 1700 1700 V V ±20 ±30 V V 120 50 42 485 A A A A ICM = 200 1360 A V 880 W -55 ... +175 175 -55 ... +175 °C °C °C G E C G = Gate, C = Collector, E = Emitter  either emitter terminal can be used as Main or Kelvin Emitter Features   2500 3000 V~ V~ 1.5/13 1.3/11.5 Nm/lb.in Nm/lb.in  30 g     International Standard Package miniBLOC, with Aluminium Nitride Isolation 2500V~ Isolation Voltage Anti-Parallel Diode High Voltage Package High Blocking Voltage Low Saturation Voltage Advantages Symbol Test Conditions (TJ = 25C, Unless Otherwise Specified) Characteristic Values Min. Typ. Max. BVCES IC = 250A, VGE = 0V 1700 VGE(th) IC = 250A, VCE = VGE 3.0 ICES VCE = VCES, VGE = 0V VCE = 0.8 • VCES, VGE = 0V IGES VCE = 0V, VGE = 20V VCE(sat) IC  V 5.0 100 2.8 3.9 3.7 Applications  nA V V     © 2017 IXYS CORPORATION, All Rights Reserved Low Gate Drive Requirement High Power Density V 25 A 5 mA TJ = 125C = 50A, VGE = 15V, Note 1 TJ = 150C  Switch-Mode and Resonant-Mode Power Supplies Uninterruptible Power Supplies (UPS) Laser Generators Capacitor Discharge Circuits AC Switches DS100801(02/17) IXYN50N170CV1 Symbol Test Conditions (TJ = 25°C Unless Otherwise Specified) Characteristic Values Min. Typ. Max. gfs IC = 50A, VCE = 10V, Note 1 30 RGi Gate Input Resistance Cies Coes Cres Qg(on) Qge Qgc td(on) tri Eon td(off) tfi Eoff td(on) tri Eon td(off) tfi Eoff VCE = 25V, VGE = 0V, f = 1MHz 50 S 2.0  5500 380 105 pF pF pF 260 28 110 nC nC nC 20 44 8.7 180 95 5.6 ns ns mJ ns ns mJ 22 40 11.9 236 160 8.2 ns ns mJ ns ns mJ 0.05 0.17 °C/W °C/W IC = 50A, VGE = 15V, VCE = 0.5 • VCES Inductive load, TJ = 25°C IC = 50A, VGE = 15V VCE = 0.5 • VCES, RG = 1 Note 2 Inductive load, TJ = 150°C IC = 50A, VGE = 15V VCE = 0.5 • VCES, RG = 1 Note 2 RthJC RthCS SOT-227B miniBLOC (IXYN) Reverse Diode (FRED) (TJ = 25°C, Unless Otherwise Specified) Symbol Test Conditions Characteristic Value Min. Typ. Max. VF IF = 50A,VGE = 0V, Note 1 IRM IF = 50A,VGE = 0V, -diF/dt = 500A/μs, trr VR = 1200V, TJ = 150°C 2.5 3.2 TJ = 150°C V V 40 A 255 ns RthJC Notes: 3.2 0.42°C/W 1. Pulse test, t  300μs, duty cycle, d  2%. 2. Switching times & energy losses may increase for higher VCE(clamp), TJ or RG. ADVANCE TECHNICAL INFORMATION The product presented herein is under development. The Technical Specifications offered are derived from a subjective evaluation of the design, based upon prior knowledge and experience, and constitute a "considered reflection" of the anticipated result. IXYS reserves the right to change limits, test conditions, and dimensions without notice. IXYS Reserves the Right to Change Limits, Test Conditions, and Dimensions. IXYS MOSFETs and IGBTs are covered 4,835,592 by one or more of the following U.S. patents: 4,860,072 4,881,106 4,931,844 5,017,508 5,034,796 5,049,961 5,063,307 5,187,117 5,237,481 5,381,025 5,486,715 6,162,665 6,259,123 B1 6,306,728 B1 6,404,065 B1 6,534,343 6,583,505 6,683,344 6,727,585 7,005,734 B2 6,710,405 B2 6,759,692 7,063,975 B2 6,710,463 6,771,478 B2 7,071,537 7,157,338B2 °C IXYN50N170C1 o o Fig. 2. Extended Output Characteristics @ TJ = 25 C Fig. 1. Output Characteristics @ TJ = 25 C 100 600 VGE = 15V 12V 10V 9V 90 80 VGE = 15V 8V 70 13V 400 I C - Amperes I C - Amperes 14V 500 60 50 7V 40 30 12V 300 11V 10V 200 9V 20 100 8V 7V 6V 10 6V 0 0 0 0.5 1 1.5 2 2.5 3 3.5 4 4.5 5 0 2 4 6 8 2.2 100 VGE = 15V 12V 10V 9V 1.8 8V 70 I C - Amperes 14 16 18 20 22 VGE = 15V 2.0 V CE(sat) - Normalized 80 12 Fig. 4. Dependence of VCE(sat) on Junction Temperature o Fig. 3. Output Characteristics @ TJ = 150 C 90 10 VCE - Volts VCE - Volts 60 7V 50 40 30 6V 1.6 1.4 I C = 50A 1.2 1.0 I C = 25A 0.8 20 10 I C = 100A 0.6 5V 0.4 0 0 1 2 3 4 5 6 -50 7 -25 0 VCE - Volts 50 75 100 125 150 175 TJ - Degrees Centigrade Fig. 5. Collector-to-Emitter Voltage vs. Gate-to-Emitter Voltage 7 25 Fig. 6. Input Admittance 250 225 o TJ = 150 C 200 6 I C - Amperes VCE - Volts 175 5 I C = 100A 4 150 125 100 75 o 50A 3 TJ = 150 C 50 25A o 25 C 25 o - 40 C 0 2 5 6 7 8 9 10 11 12 VGE - Volts © 2017 IXYS CORPORATION, All Rights Reserved 13 14 15 4.0 4.5 5.0 5.5 6.0 6.5 7.0 7.5 VGE - Volts 8.0 8.5 9.0 9.5 10.0 IXYN50N170CV1 Fig. 7. Transconductance Fig. 8. Gate Charge 90 16 o TJ = - 40 C 80 70 I C = 50A I G = 10mA 12 o 25 C 60 50 V GE - Volts g f s - Siemens VCE = 850V 14 o 150 C 40 30 10 8 6 4 20 2 10 0 0 0 40 80 120 160 200 240 280 0 40 80 I C - Amperes Fig. 9. Capacitance 160 200 240 280 Fig. 10. Reverse-Bias Safe Operating Area 240 10,000 Cies 200 160 1,000 I C - Amperes Capacitance - PicoFarads 120 QG - NanoCoulombs Coes 100 120 80 Cres o TJ = 150 C 40 RG = 1Ω dv / dt < 10V / ns f = 1 MHz 0 10 0 5 10 15 20 25 30 35 40 200 400 600 800 1000 1200 1400 1600 VCE - Volts VCE - Volts Fig. 11. Maximum Transient Thermal Impedance 1 Z(th)JC - K / W 0.1 0.01 0.001 0.0001 0.00001 0.0001 0.001 0.01 Pulse Width - Second IXYS Reserves the Right to Change Limits, Test Conditions, and Dimensions. 0.1 1 IXYN50N170CV1 Fig. 12. Inductive Switching Energy Loss vs. Gate Resistance 35 Eoff 30 Eon o TJ = 150 C , VGE = 15V 40 24 35 20 Fig. 13. Inductive Switching Energy Loss vs. Collector Current Eoff Eon 25 RG = 1ΩVGE = 15V VCE = 850V VCE = 850V 30 25 15 20 10 16 20 12 15 o TJ = 150 C 8 10 E on - MilliJoules 20 E on - MilliJoules I C = 100A E off - MilliJoules 25 E off - MilliJoules 30 15 I C = 50A 5 4 10 5 o TJ = 25 C 0 0 5 1 2 3 4 5 6 7 8 9 20 10 30 40 50 Fig. 14. Inductive Switching Energy Loss vs. Junction Temperature Eon 0 100 24 12 20 9 16 6 12 td(off) 500 VCE = 850V 180 400 I C = 50A 160 300 I C = 100A 140 I C = 50A 3 50 75 100 200 8 0 25 4 150 125 120 100 1 2 3 4 tfi VCE = 850V 200 6 7 8 9 10 350 180 300 160 250 o TJ = 150 C 150 200 100 150 Fig. 17. Inductive Turn-off Switching Times vs. Junction Temperature tfi td(off) 280 260 RG = 1Ω, VGE = 15V VCE = 850V 240 I C = 100A 140 220 120 200 I C = 50A 100 180 80 160 o TJ = 25 C 50 100 I C = 100A 0 20 30 40 50 60 70 80 I C - Amperes © 2017 IXYS CORPORATION, All Rights Reserved 90 50 100 60 25 50 75 100 TJ - Degrees Centigrade 125 140 150 t d(off) - Nanoseconds 250 200 t d(off) - Nanoseconds t f i - Nanoseconds td(off) RG = 1Ω, VGE = 15V 400 t f i - Nanoseconds Fig. 16. Inductive Turn-off Switching Times vs. Collector Current 300 5 RG - Ohms TJ - Degrees Centigrade 350 t d(off) - Nanoseconds 15 600 o 28 E on - MilliJoules E off - MilliJoules 90 TJ = 150 C, VGE = 15V 200 I C = 100A VCE = 850V 18 tfi 32 RG = 1ΩVGE = 15V 80 Fig. 15. Inductive Turn-off Switching Times vs. Gate Resistance 220 36 t f i - Nanoseconds Eoff 21 70 I C - Amperes RG - Ohms 24 60 IXYN50N170CV1 Fig. 19. Inductive Turn-on Switching Times vs. Gate Resistance tri 200 td(on) 120 30 80 20 I C = 50A 40 10 0 3 4 5 6 7 8 9 tri 60 20 o TJ = 25 C 40 18 20 16 30 40 50 60 70 80 90 14 100 34 30 140 28 120 26 I C = 100A 100 24 80 22 60 20 I C = 50A 40 18 20 16 0 50 22 32 VCE = 850V 25 80 75 100 125 t d(on) - Nanoseconds t r i - Nanoseconds td(on) RG = 1Ω, VGE = 15V 160 24 I C - Amperes Fig. 21. Inductive Turn-on Switching Times vs. Junction Temperature 180 26 o TJ = 150 C 100 20 10 RG - Ohms 200 VCE = 850V 0 0 2 28 t d(on) - Nanoseconds I C = 100A t d(on) - Nanoseconds 40 td(on) 30 RG = 1Ω, VGE = 15V 120 160 1 tri 140 50 o TJ = 150 C, VGE = 15V VCE = 850V t r i - Nanoseconds 160 60 t r i - Nanoseconds 240 Fig. 20. Inductive Turn-on Switching Times vs. Collector Current 14 150 TJ - Degrees Centigrade IXYS Reserves the Right to Change Limits, Test Conditions, and Dimensions. IXYS REF: IXY_50N170C(9T-AT653) 2-10-17 IXYN50N170CV1 Fig. 22. Diode Forward Characteristics Fig. 23. Reverse Recovery Charge vs. -diF/dt 200 10 o TJ = 150 C 9 VR = 1200V 160 IF = 100A 8 o TJ = 25 C Q RR (μC) I F (A) 120 o TJ = 150 C 80 7 50A 6 25A 5 4 40 3 0 2 0 1 2 3 4 5 6 7 400 500 600 700 800 900 -diF/ dt (A/μs) VF (V) Fig. 23. Reverse Recovery Current vs. -diF/dt Fig. 24. Reverse Recovery Time vs. -diF/dt 400 70 o TJ = 150 C o TJ = 150 C 360 VR = 1200V 60 VR = 1200V IF = 100A 320 IF = 100A I RR (A) 50 tRR (ns) 50A 25A 40 280 50A 240 200 25A 30 160 20 120 400 500 600 700 800 900 400 500 diF/dt (A/μs) 700 800 900 -diF/dt (A/μs) Fig. 25. Dynamic Parameters QRR, IRR vs. Junction Temperature 1.1 600 1 Fig. 26. Maximum Transient Thermal Impedance (Diode) VR = 1200V 1.0 IF = 50A -diF/dt = 500A/μs Z(th)JC - K / W KF 0.9 KF QRR 0.8 0.7 0.6 0.1 KF IRR 0.5 0 20 40 60 80 100 TJ (oC) © 2017 IXYS CORPORATION, All Rights Reserved 120 140 160 0.01 0.0001 0.001 0.01 0.1 Pulse Width - Seconds 1 10 Disclaimer Notice - Information furnished is believed to be accurate and reliable. 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