IXYN75N65C3D1

Advance Technical Information XPTTM 650V IGBT GenX3TM w/ Diode IXYN75N65C3D1 Extreme Light Punch through IGBT for 20-60kHz Switching VCES = IC110 = VCE(sat)  tfi(typ) = E SOT-227B, miniBLOC E153432 Symbol Test Conditions VCES VCGR TJ = 25°C to 175°C TJ = 25°C to 175°C, RGE = 1M 650 650 V V VGES VGEM Continuous Transient ±20 ±30 V V IC25 IC110 IF110 ICM TC TC TC TC 150 75 60 360 A A A A IA EAS TC = 25°C TC = 25°C 30 300 A mJ SSOA (RBSOA) VGE = 15V, TVJ = 150°C, RG = 3 Clamped Inductive Load ICM = 150 VCE  VCES A tsc (SCSOA) VGE = 15V, VCE = 360V, TJ = 150°C RG = 82, Non Repetitive 8 μs PC TC = 25°C Maximum Ratings = 25°C (Chip Capability) = 110°C = 110°C = 25°C, 1ms Md 50/60Hz IISOL 1mA E G E C G = Gate, C = Collector, E = Emitter  either emitter terminal can be used as Main or Kelvin Emitter Features   TJ TJM Tstg TVISOL 650V 75A 2.3V 60ns t = 1min t = 1s Mounting Torque Terminal Connection Torque Weight 600 W -55 ... +175 175 -55 ... +175 °C °C °C 2500 3000 V~ V~ 1.5/13 1.3/11.5 Nm/lb.in Nm/lb.in 30 g        Advantages   Symbol Test Conditions (TJ = 25C, Unless Otherwise Specified) Characteristic Values Min. Typ. Max. BVCES IC = 250A, VGE = 0V 650 VGE(th) IC = 250A, VCE = VGE 3.5 ICES VCE = VCES, VGE = 0V IGES VCE = 0V, VGE = 20V 100 VCE(sat) IC 1.8 2.2 = 60A, VGE = 15V, Note 1 TJ = 150C © 2015 IXYS CORPORATION, All Rights Reserved V 25 A 3 mA TJ = 150C 2.3 High Power Density Low Gate Drive Requirement Applications V 6.0 International Standard Package miniBLOC, with Aluminium Nitride Isolation 2500V~ Isolation Voltage Optimized for 20-60kHz Switching Square RBSOA Avalanche Rated Short Circuit Capability High Current Handling Capability Anti-Parallel Fast Diode       nA V V   Power Inverters UPS Motor Drives SMPS PFC Circuits Battery Chargers Welding Machines Lamp Ballasts DS100661(4/15) IXYN75N65C3D1 Symbol Test Conditions (TJ = 25°C Unless Otherwise Specified) Characteristic Values Min. Typ. Max. gfs 25 IC = 60A, VCE = 10V, Note 1 Cies Coes Cres VCE = 25V, VGE = 0V, f = 1MHz Qg(on) Qge Qgc IC = 60A, VGE = 15V, VCE = 0.5 • VCES td(on) tri Eon td(off) tfi Eoff td(on) tri Eon td(off) tfi Eoff Inductive load, TJ = 25°C IC = 60A, VGE = 15V VCE = 400V, RG = 3 Note 2 Inductive load, TJ = 150°C IC = 60A, VGE = 15V VCE = 400V, RG = 3 Note 2 RthJC RthCS SOT-227B miniBLOC (IXYN) 44 S 3410 330 73 pF pF pF 122 22 60 nC nC nC 26 65 2.00 93 60 0.95 ns ns mJ ns ns mJ 26 64 3.40 115 64 1.30 ns ns mJ ns ns mJ 0.05 0.25 °C/W °C/W Reverse Diode (FRED) Symbol Test Conditions (TJ = 25°C Unless Otherwise Specified) VF IF = 50A, VGE = 0V, Note 1 Irr trr IF = 50A, VGE = 0V, -diF/dt = 700A/μs, VR = 400V Characteristic Values Min. Typ. Max. TJ = 150°C 1.45 2.50 V V TJ = 150°C TJ = 150°C 30 135 A ns RthJC Notes: 0.52 °C/W 1. Pulse test, t  300μs, duty cycle, d  2%. 2. Switching times & energy losses may increase for higher VCE(clamp), TJ or RG. ADVANCE TECHNICAL INFORMATION The product presented herein is under development. The Technical Specifications offered are derived from a subjective evaluation of the design, based upon prior knowledge and experience, and constitute a "considered reflection" of the anticipated result. IXYS reserves the right to change limits, test conditions, and dimensions without notice. IXYS Reserves the Right to Change Limits, Test Conditions, and Dimensions. IXYS MOSFETs and IGBTs are covered 4,835,592 by one or more of the following U.S. patents: 4,860,072 4,881,106 4,931,844 5,017,508 5,034,796 5,049,961 5,063,307 5,187,117 5,237,481 5,381,025 5,486,715 6,162,665 6,259,123 B1 6,306,728 B1 6,404,065 B1 6,534,343 6,583,505 6,683,344 6,727,585 7,005,734 B2 6,710,405 B2 6,759,692 7,063,975 B2 6,710,463 6,771,478 B2 7,071,537 7,157,338B2 IXYN75N65C3D1 Fig. 1. Output Characteristics @ TJ = 25ºC Fig. 2. Extended Output Characteristics @ TJ = 25ºC 150 300 VGE = 15V 14V 13V 12V 120 VGE = 15V 14V 13V 250 11V 12V 200 I C (A) I C (A) 90 10V 11V 150 60 9V 10V 100 30 7V 0 0 1 2 3 9V 50 8V 8V 7V 0 4 0 5 10 15 VCE (V) VCE (V) Fig. 3. Output Characteristics @ TJ = 150ºC Fig. 4. Dependence of VCE(sat) on Junction Temperature 150 2.2 VGE = 15V 14V 13V 12V VGE = 15V 2.0 11V 1.8 VCE(sat) - Normalized 120 10V I C (A) 90 60 9V I C = 120A 1.6 1.4 1.2 I C = 60A 1.0 0.8 8V 30 I C = 30A 0.6 7V 6V 0 0 0.5 1 1.5 2 2.5 3 3.5 4 4.5 0.4 5 -50 -25 0 25 50 VCE (V) 75 100 125 150 175 TJ (ºC) Fig. 5. Collector-to-Emitter Voltage vs. Gate-to-Emitter Voltage 6 20 Fig. 6. Input Admittance 140 TJ = 25ºC 120 5 100 I C (A) VCE (V) 4 I C = 120A 3 80 60 60A 2 TJ = 150ºC 25ºC 40 30A 1 - 40ºC 20 0 0 8 9 10 11 12 VGE - (V) © 2015 IXYS CORPORATION, All Rights Reserved 13 14 15 4 5 6 7 8 VGE (V) 9 10 11 IXYN75N65C3D1 Fig. 7. Transconductance Fig. 8. Gate Charge 16 70 TJ = - 40ºC I C = 60A 50 25ºC 12 150ºC 10 40 VGE (V) g f s (S) VCE = 325V 14 60 30 I G = 10mA 8 6 20 4 10 2 0 0 0 20 40 60 80 100 120 140 160 0 180 20 40 60 80 100 120 QG (nC) I C (A) Fig. 10. Reverse-Bias Safe Operating Area Fig. 9. Capacitance 160 10,000 140 120 1,000 100 Coes I C (A) Capacitance (pF) Cies 80 60 100 40 TJ = 150ºC 20 RG = 3Ω dv / dt < 10V / ns Cres f = 1 MHz 10 0 0 5 10 15 20 25 30 35 100 40 200 300 400 500 600 700 VCE (V) VCE (V) Fig. 11. Forward-Bias Safe Operating Area Fig. 12. Maximum Transient Thermal Impedance (IGBT) 1 1000 VCE(sat) Limit I D (A) 25µs 100µs 10 Z (th)JC (ºC / W) 100 0.1 0.01 1ms 1 TJ = 175ºC TC = 25ºC Single Pulse 10ms DC 0.1 1 10 100 1000 VDS (V) IXYS Reserves the Right to Change Limits, Test Conditions, and Dimensions. 0.001 0.00001 0.0001 0.001 0.01 Pulse Width (s) 0.1 1 10 IXYN75N65C3D1 Fig. 13. Inductive Switching Energy Loss vs. Gate Resistance 4.0 Eoff 3.5 Eon - 2.4 9 --- Eoff 8 2.0 TJ = 150ºC , VGE = 15V VCE = 400V 3.0 Fig. 14. Inductive Switching Energy Loss vs. Collector Current Eon 6 ---5 RG = 3Ω , VGE = 15V VCE = 400V 7 1.6 1.5 4 E off (mJ) 5 1.2 3 TJ = 150ºC 0.8 2 3 I C = 40A TJ = 25ºC 0.4 0.5 1 2 0.0 0.0 1 0 5 10 15 20 25 30 0 40 35 45 50 55 60 Fig. 15. Inductive Switching Energy Loss vs. Junction Temperature 3.0 Eoff 2.5 Eon 70 75 80 6 120 5 100 4 80 Fig. 16. Inductive Turn-off Switching Times vs. Gate Resistance tfi ---- RG = 3Ω , VGE = 15V 600 td(off) - - - 500 TJ = 150ºC, VGE = 15V VCE = 400V 400 60 300 I C = 40A, 80A 2 40 200 1 20 100 0 150 0 1.0 0.5 t d(off) (ns) E on (mJ) 3 I C = 80A t f i (ns) VCE = 400V 2.0 1.5 65 I C (A) RG (Ω) E off (mJ) Eon (mJ) I C = 80A 2.0 1.0 4 6 E on (mJ) E off (mJ) 2.5 I C = 40A 0.0 25 50 75 100 125 0 0 5 10 15 Fig. 17. Inductive Turn-off Switching Times vs. Collector Current tfi 30 Fig. 18. Inductive Turn-off Switching Times vs. Junction Temperature 120 160 tfi td(off) - - - - RG = 3Ω , VGE = 15V 80 25 100 140 160 VCE = 400V TJ = 25ºC 100 t f i (ns) TJ = 150ºC 140 60 120 I C = 80A 40 20 80 0 60 40 45 50 55 60 65 70 I C (A) © 2015 IXYS CORPORATION, All Rights Reserved 75 80 100 I C = 40A 20 80 0 25 50 75 100 TJ (ºC) 125 60 150 t d(off) (ns) 120 t d(off) (ns) t f i (ns) 80 60 180 td(off) - - - - RG = 3Ω , VGE = 15V VCE = 400V 40 35 RG (Ω) TJ (ºC) 100 20 IXYN75N65C3D1 Fig. 19. Inductive Turn-on Switching Times vs. Gate Resistance 200 120 110 180 tri td(on) - - - - 160 TJ = 150ºC, VGE = 15V Fig. 20. Inductive Turn-on Switching Times vs. Collector Current tri 100 100 90 I C = 80A 100 60 80 50 I C = 40A 60 40 40 30 20 20 0 80 t r i (ns) t r i (ns) 70 10 10 15 20 25 30 40 TJ = 25ºC, 150ºC 60 40 20 20 10 0 35 0 40 45 RG (Ω) tri td(on) - - - - RG = 3Ω , VGE = 15V 55 60 65 70 75 80 Fig. 22. Maximum Peak Load Current vs. Frequency 34 100 90 32 80 VCE = 400V 100 30 70 I C = 80A 28 60 26 40 24 Triangular Wave 60 I C (A) 80 t d(on) (ns) t r i (ns) 50 I C (A) Fig. 21. Inductive Turn-on Switching Times vs. Junction Temperature 120 30 t d(on) (ns) 120 t d(on) (ns) 80 140 50 VCE = 400V 140 5 td(on) - - - - RG = 3Ω , VGE = 15V VCE = 400V 0 60 50 TJ = 150ºC 40 TC = 75ºC I C = 40A 20 22 0 25 50 75 100 125 20 150 TJ (ºC) IXYS Reserves the Right to Change Limits, Test Conditions, and Dimensions. 30 VCE = 400V 20 VGE = 15V 10 RG = 3Ω D = 0.5 Square Wave 0 10 100 fmax (kHz) 1,000 IXYN75N65C3D1 Fig. 23. Diode Forward Characteristics Fig. 24. Reverse Recovery Charge vs. -diF/dt 100 2.8 90 TJ = 150ºC 2.6 VR = 400V 80 IF = 100A 2.4 70 I F (A) Q RR (µC) TJ = 150ºC 60 TJ = 25ºC 50 40 2.2 50A 2 1.8 25A 30 1.6 20 1.4 10 1.2 0 0 0.5 1 1.5 2 400 2.5 500 600 700 900 1000 1100 Fig. 26. Reverse Recovery Time vs. -diF/dt Fig. 25. Reverse Recovery Current vs. -diF/dt 240 34 TJ = 150ºC 32 TJ = 150ºC 220 50A VR = 400V VR = 400V 30 200 25A 180 tRR (ns) 28 I RR (A) 800 -diF/ dt (A/µs) VF (V) 26 IF = 100A 160 50A 140 24 22 120 IF = 100A 25A 20 100 18 400 80 500 600 700 800 900 1000 1100 400 500 600 Fig. 27. Dynamic Parameters QRR, IRR vs. Junction Temperature 1.2 700 800 900 1000 1100 -diF/dt (A/µs) -diF/dt (A/µs) Fig. 28. Maximum Transient Thermal Impedance (Diode) 1 VR = 400V 1 I F = 50A -dIF /dt = 700 A/µs Z(th)JC (ºC / W) KF 0.8 0.6 KF IRR 0.4 0.1 KF QRR 0.2 0 0 20 40 60 80 100 TJ (ºC) © 2015 IXYS CORPORATION, All Rights Reserved 120 140 160 0.01 0.00001 0.0001 0.001 0.01 0.1 1 10 Pulse Width (s) IXYS REF: IXY_75N65C3D1(71-R47) 4-15-15-A Disclaimer Notice - Information furnished is believed to be accurate and reliable. However, users should independently evaluate the suitability of and test each product selected for their own applications. 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