IXYN82N120C3

Preliminary Technical Information IXYN82N120C3 1200V XPTTM IGBT GenX3TM VCES = IC110 = VCE(sat)  tfi(typ) = High-Speed IGBT for 20-50 kHz Switching Symbol Test Conditions VCES VCGR TJ = 25°C to 175°C TJ = 25°C to 175°C, RGE = 1M VGES VGEM SOT-227B, miniBLOC E153432 Maximum Ratings 1200 1200 V V Continuous Transient ±20 ±30 V V IC25 IC110 ICM TC = 25°C (Chip Capability) TC = 110°C TC = 25°C, 1ms 120 66 380 A A A SSOA (RBSOA) VGE = 15V, TVJ = 150°C, RG = 2 Clamped Inductive Load ICM = 164 @VCE  VCES A PC TC = 25°C 600 W -55 ... +175 175 -55 ... +175 °C °C °C 2500 3000 V~ V~ 1.5/13 1.3/11.5 Nm/lb.in. Nm/lb.in. 30 g TJ TJM Tstg VISOL 50/60Hz IISOL 1mA t = 1min t = 1s Md Mounting Torque Terminal Connection Torque Weight 1200V 66A 3.20V 93ns E G E C G = Gate, C = Collector, E = Emitter  either emitter terminal can be used as Main or Kelvin Emitter Features       Optimized for Low Switching Losses Square RBSOA 2500V~ Isolation Voltage Positive Thermal Coefficient of Vce(sat) High Current Handling Capability International Standard Package Advantages   Symbol Test Conditions (TJ = 25C, Unless Otherwise Specified) Characteristic Values Min. Typ. Max. BVCES IC = 250A, VGE = 0V 1200 VGE(th) IC = 250A, VCE = VGE 2.5 ICES VCE = VCES, VGE = 0V IGES VCE = 0V, VGE = 20V VCE(sat) IC = 82A, VGE = 15V, Note 1 TJ = 150C ©2019 IXYS CORPORATION, All Rights Reserved Applications V 4.5 V 25 500 A A 100 nA TJ = 150C 2.75 3.76 3.20 High Power Density Low Gate Drive Requirement V V         High Frequency Power Inverters UPS Motor Drives SMPS PFC Circuits Battery Chargers Welding Machines Lamp Ballasts DS100389B(1/19) IXYN82N120C3 Symbol Test Conditions (TJ = 25°C Unless Otherwise Specified) Characteristic Values Min. Typ. Max. gfs 30 IC = 60A, VCE = 10V, Note 1 Cies Coes Cres VCE = 25V, VGE = 0V, f = 1MHz Qg(on) Qge Qgc IC = 82A, VGE = 15V, VCE = 0.5 • VCES td(on) tri Eon td(off) tfi Eoff td(on) tri Eon td(off) tfi Eoff Inductive load, TJ = 25°C IC = 80A, VGE = 15V VCE = 0.5 • VCES, RG = 2 Note 2 Inductive load, TJ = 125°C IC = 80A, VGE = 15V VCE = 0.5 • VCES, RG = 2 Note 2 RthJC RthCS Notes: SOT-227B miniBLOC (IXYN) 50 S 4060 285 110 pF pF pF 215 26 84 nC nC nC 29 78 4.95 192 93 2.78 ns ns mJ ns ns mJ 5.00 29 90 7.45 200 95 3.70 ns ns mJ ns ns mJ 0.05 0.25 °C/W °C/W 1. Pulse test, t  300μs, duty cycle, d  2%. 2. Switching times & energy losses may increase for higher VCE(clamp), TJ or RG. PRELIMINARY TECHNICAL INFORMATION The product presented herein is under development. The Technical Specifications offered are derived from data gathered during objective characterizations of preliminary engineering lots; but also may yet contain some information supplied during a pre-production design evaluation. IXYS reserves the right to change limits, test conditions, and dimensions without notice. IXYS Reserves the Right to Change Limits, Test Conditions, and Dimensions. IXYS MOSFETs and IGBTs are covered 4,835,592 by one or more of the following U.S. patents: 4,860,072 4,881,106 4,931,844 5,017,508 5,034,796 5,049,961 5,063,307 5,187,117 5,237,481 5,381,025 5,486,715 6,162,665 6,259,123 B1 6,306,728 B1 6,404,065 B1 6,534,343 6,583,505 6,683,344 6,727,585 7,005,734 B2 6,710,405 B2 6,759,692 7,063,975 B2 6,710,463 6,771,478 B2 7,071,537 7,157,338B2 IXYN82N120C3 o o Fig. 2. Extended Output Characteristics @ TJ = 25 C Fig. 1. Output Characteristics @ TJ = 25 C 300 160 VGE = 15V 13V 11V 10V 9V 140 250 100 80 11V 10V 9V 200 8V I C - Amperes I C - Amperes 120 VGE = 15V 13V 12V 7V 60 150 8V 100 7V 6V 40 50 20 6V 5V 0 5V 0 0 0.5 1 1.5 2 2.5 3 3.5 4 4.5 5 0 5 10 15 VCE - Volts 2.2 VGE = 15V 13V 11V 10V 9V VGE = 15V 2.0 I C = 164A 1.8 VCE(sat) - Normalized I C - Amperes 120 30 Fig. 4. Dependence of VCE(sat) on Junction Temperature o 140 25 VCE - Volts Fig. 3. Output Characteristics @ TJ = 125 C 160 20 8V 100 80 7V 60 40 1.6 1.4 I C = 82A 1.2 1.0 0.8 6V I C = 41A 20 0.6 5V 0 0 1 2 3 4 5 0.4 -50 6 -25 0 VCE - Volts 25 50 75 100 125 150 TJ - Degrees Centigrade Fig. 5. Collector-to-Emitter Voltage vs. Gate-to-Emitter Voltage Fig. 6. Input Admittance 160 8.5 o TJ = 25 C 7.5 140 120 5.5 I C - Amperes VCE - Volts 6.5 I C = 164A 4.5 80 60 o TJ = 125 C 82A 3.5 100 40 o 25 C o - 40 C 2.5 20 41A 1.5 0 5 6 7 8 9 10 11 VGE - Volts ©2019 IXYS CORPORATION, All Rights Reserved 12 13 14 15 3.0 3.5 4.0 4.5 5.0 5.5 6.0 VGE - Volts 6.5 7.0 7.5 8.0 IXYN82N120C3 Fig. 8. Gate Charge Fig. 7. Transconductance 80 16 o TJ = - 40 C 70 VCE = 600V 14 60 I C = 82A I G = 10mA 12 50 V GE - Volts g f s - Siemens o 25 C o 125 C 40 30 10 8 6 20 4 10 2 0 0 0 20 40 60 80 100 120 140 160 0 20 40 60 I C - Amperes 80 100 120 140 160 180 200 220 QG - NanoCoulombs Fig. 9. Capacitance Fig. 10. Reverse-Bias Safe Operating Area 180 10,000 140 120 1,000 I C - Amperes Capacitance - PicoFarads 160 Cies Coes 100 80 60 100 Cres f = 1 MHz o 40 TJ = 150 C 20 RG = 2Ω dv / dt < 10V / ns 0 10 0 5 10 15 20 25 30 35 200 40 400 600 800 1000 1200 VCE - Volts VCE - Volts Fig. 11. Maximum Transient Thermal Impedance Z (th)JC - K / W 1 0.1 0.01 0.001 0.00001 0.0001 0.001 0.01 Pulse Width - Seconds IXYS Reserves the Right to Change Limits, Test Conditions, and Dimensions. 0.1 1 10 IXYN82N120C3 Fig. 13. Inductive Switching Energy Loss vs. Collector Current Fig. 12. Inductive Switching Energy Loss vs. Gate Resistance 8 Eon VCE = 600V 6 4.0 4 8 3 6 9 8 VCE = 600V 3.5 7 o 3.0 6 TJ = 125 C 2.5 5 2.0 4 E on - MilliJoules 10 E on - MilliJoules I C = 80A Eon RG = 2ΩVGE = 15V 12 5 10 Eoff 4.5 14 o TJ = 125 C , VGE = 15V E off - MilliJoules 7 E off - MilliJoules 5.0 16 Eoff o 2 TJ = 25 C 4 1.5 3 2 1.0 2 0 0.5 I C = 40A 1 0 2 4 6 8 10 12 14 16 40 18 50 60 VCE = 600V 8 180 7 160 6 I C = 80A 2.5 5 2.0 4 I C = 40A 1.5 0.5 50 75 100 780 tfi td(off) 700 o TJ = 125 C, VGE = 15V 3 1.0 25 VCE = 600V 620 140 540 I C = 40A 120 460 100 380 80 2 60 1 125 40 300 I C = 80A 4 6 8 240 230 200 14 16 18 280 td(off) RG = 2Ω, VGE = 15V 260 VCE = 600V VCE = 600V 160 210 o TJ = 125 C 120 200 80 190 160 240 I C = 40A 120 220 I C = 80A 80 200 o TJ = 25 C 40 180 0 40 50 60 70 80 I C - Amperes ©2019 IXYS CORPORATION, All Rights Reserved 90 170 100 40 180 0 25 50 75 TJ - Degrees Centigrade 100 160 125 t d(off) - Nanoseconds 220 t d(off) - Nanoseconds t f i - Nanoseconds 240 tfi td(off) RG = 2Ω, VGE = 15V 200 12 Fig. 17. Inductive Turn-off Switching Times vs. Junction Temperature t f i - Nanoseconds tfi 10 RG - Ohms Fig. 16. Inductive Turn-off Switching Times vs. Collector Current 240 220 140 2 TJ - Degrees Centigrade 280 1 100 t d(off) - Nanoseconds 3.0 200 t f i - Nanoseconds Eon RG = 2ΩVGE = 15V 9 E on - MilliJoules E off - MilliJoules 4.5 3.5 90 Fig. 15. Inductive Turn-off Switching Times vs. Gate Resistance Fig. 14. Inductive Switching Energy Loss vs. Junction Temperature Eoff 80 I C - Amperes RG - Ohms 4.0 70 IXYN82N120C3 tri 140 td(on) VCE = 600V 120 40 60 35 40 30 I C = 40A 20 25 0 6 8 10 12 14 16 40 o TJ = 125 C 80 30 o TJ = 25 C 60 20 40 10 20 20 4 100 40 18 50 60 70 80 90 t d(on) - Nanoseconds I C = 80A 80 50 VCE = 600V t d(on) - Nanoseconds 45 td(on) RG = 2Ω, VGE = 15V 50 100 2 60 tri 55 o TJ = 125 C, VGE = 15V 120 140 60 t r i - Nanoseconds 160 t r i - Nanoseconds Fig. 19. Inductive Turn-on Switching Times vs. Collector Current Fig. 18. Inductive Turn-on Switching Times vs. Gate Resistance 0 100 I C - Amperes RG - Ohms Fig. 20. Inductive Turn-on Switching Times vs. Junction Temperature 140 36 tri 120 td(on) 34 RG = 2Ω, VGE = 15V 32 80 I C = 80A 30 60 28 40 26 I C = 40A 20 0 25 50 75 100 t d(on) - Nanoseconds t r i - Nanoseconds VCE = 600V 100 24 22 125 TJ - Degrees Centigrade IXYS Reserves the Right to Change Limits, Test Conditions, and Dimensions. IXYS REF: IXY_82N120C3(8M)12-13-12-A IXYN82N120C3 Disclaimer Notice - Information furnished is believed to be accurate and reliable. However, users should independently evaluate the suitability of and test each product selected for their own applications. Littelfuse products are not designed for, and may not be used in, all applications. Read complete Disclaimer Notice at www.littelfuse.com/disclaimer-electronics. ©2019 IXYS CORPORATION, All Rights Reserved