IXYP10N65C3

Preliminary Technical Information IXYP10N65C3 XPTTM 650V IGBT GenX3TM VCES = IC110 = VCE(sat)  tfi(typ) = Extreme Light Punch Through IGBT for 20-60kHz Switching 650V 10A 2.50V 23ns TO-220 Symbol Test Conditions Maximum Ratings VCES VCGR TJ = 25°C to 175°C TJ = 25°C to 175°C, RGE = 1M 650 650 V V VGES VGEM Continuous Transient ±20 ±30 V V IC25 IC110 ICM TC = 25°C TC = 110°C TC = 25°C, 1ms 30 10 54 A A A IA EAS TC = 25°C TC = 25°C 5 50 A mJ SSOA (RBSOA) VGE = 15V, TVJ = 150°C, RG = 50 Clamped Inductive Load ICM = 20 @VCE  VCES A tsc (SCSOA) VGE = 15V, VCE = 360V, TJ = 150°C RG = 150, Non Repetitive 8 μs PC TC = 25°C Maximum Lead Temperature for Soldering 1.6 mm (0.062in.) from Case for 10s Md Mounting Torque  W -55 ... +175 175 -55 ... +175 °C °C °C 300 260 °C °C 1.13/10 Nm/lb.in. 3 g Weight      BVCES IC = 250A, VGE = 0V 650 VGE(th) IC = 250A, VCE = VGE 3.5 ICES VCE = VCES, VGE = 0V VCE = 0V, VGE = 20V VCE(sat) IC = 10A, VGE = 15V, Note 1 TJ = 150C © 2015 IXYS CORPORATION, All Rights Reserved    6.0 V  10 100 A A  100 nA TJ = 150C IGES  V 2.27 2.54 2.50 Optimized for 20-60kHz Switching Square RBSOA Avalanche Rated Short Circuit Capability International Standard Package High Power Density Extremely Rugged Low Gate Drive Requirement Applications  Characteristic Values Min. Typ. Max. C = Collector Tab = Collector Advantages  Symbol Test Conditions (TJ = 25C, Unless Otherwise Specified) Tab Features  160 CE G = Gate E = Emitter  TJ TJM Tstg TL TSOLD G  Power Inverters UPS Motor Drives SMPS PFC Circuits Battery Chargers Welding Machines Lamp Ballasts High Frequency Power Inverters V V DS100541B(01/15) IXYP10N65C3 Symbol Test Conditions (TJ = 25°C Unless Otherwise Specified) Characteristic Values Min. Typ. Max. gfs 3.8 IC = 10A, VCE = 10V, Note 1 Cies Coes Cres VCE = 25V, VGE = 0V, f = 1MHz Qg(on) Qge Qgc IC = 10A, VGE = 15V, VCE = 0.5 • VCES td(on) tri Eon td(off) tfi Eoff td(on) tri Eon td(off) tfi Eoff Inductive load, TJ = 25°C IC = 10A, VGE = 15V VCE = 400V, RG = 50 Note 2 Inductive load, TJ = 150°C IC = 10A, VGE = 15V VCE = 400V, RG = 50 Note 2 RthJC RthCS Notes: TO-220 (IXYP) Outline 6.2 S 423 27 10 pF pF pF 18 4 8 nC nC nC 20 26 0.24 77 23 0.11 ns ns mJ ns ns mJ 0.17 17 27 0.44 90 38 0.15 ns ns mJ ns ns mJ 0.50 0.94 °C/W °C/W Pins: 1 - Gate 2 - Collector 3 - Emitter 1. Pulse test, t  300μs, duty cycle, d  2%. 2. Switching times & energy losses may increase for higher VCE(clamp), TJ or RG. PRELIMANARY TECHNICAL INFORMATION The product presented herein is under development. The Technical Specifications offered are derived from a subjective evaluation of the design, based upon prior knowledge and experience, and constitute a "considered reflection" of the anticipated result. IXYS reserves the right to change limits, test conditions, and dimensions without notice. IXYS Reserves the Right to Change Limits, Test Conditions, and Dimensions. IXYS MOSFETs and IGBTs are covered 4,835,592 by one or more of the following U.S. patents: 4,860,072 4,881,106 4,931,844 5,017,508 5,034,796 5,049,961 5,063,307 5,187,117 5,237,481 5,381,025 5,486,715 6,162,665 6,259,123 B1 6,306,728 B1 6,404,065 B1 6,534,343 6,583,505 6,683,344 6,727,585 7,005,734 B2 6,710,405 B2 6,759,692 7,063,975 B2 6,710,463 6,771,478 B2 7,071,537 7,157,338B2 IXYP10N65C3 Fig. 1. Output Characteristics @ T J = 25ºC Fig. 2. Extended Output Characteristics @ T J = 25ºC 20 45 VGE = 15V 13V 12V 18 16 40 35 14V 11V 30 IC - Amperes 14 IC - Amperes VGE = 15V 12 10 10V 8 6 4 9V 2 8V 0 0 0.5 1 1.5 2 2.5 3 3.5 13V 25 12V 20 15 11V 10 10V 5 9V 8V 0 4 4.5 0 5 10 15 20 2.2 VGE = 15V 14V 13V 12V VGE = 15V 2.0 VCE(sat) - Normalized 1.8 14 IC - Amperes 30 Fig. 4. Dependence of VCE(sat) on Junction Temperature Fig. 3. Output Characteristics @ T J = 150ºC 16 25 VCE - Volts VCE - Volts 18 20 11V 12 10 10V 8 9V 6 1.6 I = 20A C 1.4 1.2 I 1.0 C = 10A 0.8 4 8V 0.6 2 7V 0 0 0.5 1 1.5 2 2.5 3 3.5 4 I C = 5A 0.4 -50 4.5 -25 0 25 VCE - Volts 50 75 100 125 150 TJ - Degrees Centigrade Fig. 5. Collector-to-Emitter Voltage vs. Gate-to-Emitter Voltage Fig. 6. Input Admittance 20 8 18 TJ = 25ºC 7 16 14 IC - Amperes VCE - Volts 6 5 I 4 C = 20A 12 10 TJ = 150ºC 25ºC - 40ºC 8 6 3 10A 4 2 2 5A 1 9 10 11 12 13 VGE - Volts © 2015 IXYS CORPORATION, All Rights Reserved 0 14 15 5 6 7 8 VGE - Volts 9 10 11 175 IXYP10N65C3 Fig. 7. Transconductance 9 TJ = - 40ºC VCE = 10V 8 VCE = 325V 14 7 25ºC 12 150ºC 10 I C = 10A I G = 1mA 6 VGE - Volts g f s - Siemens Fig. 8. Gate Charge 16 5 4 3 8 6 2 4 1 2 0 0 0 2 4 6 1,000 8 10 12 14 16 18 20 0 2 4 6 8 10 12 14 16 I C - Amperes QG - NanoCoulombs Fig. 9. Capacitance Fig. 10. Reverse-Bias Safe Operating Area 18 Cies 16 100 I C - Amperes Capacitance - PicoFarads 20 Coes 10 Cres 12 8 TJ = 150ºC 4 RG = 50Ω dv / dt < 10V / ns f = 1 MHz 1 0 5 10 15 20 25 30 35 0 100 10 40 VCE - Volts 200 300 400 500 600 700 VCE - Volts Fig. 13. Maximum Transient Thermal Impedance Fig. 12. Maximum Transient Thermal Impedance (IGBT) Fig. 11. Forward-Bias Safe Operating Area 100 AAAAA 2 VCE(sat) Limit ID - Amperes 10 25µs 100µs Z (th)JC - ºC / W 1 D = 0.5 D = 0.2 0.1 D = tp / T D = 0.1 tp D = 0.05 1 TJ = 175ºC D = 0.02 1ms TC = 25ºC Single Pulse DC 0.1 1 10 100 10ms 1000 VDS - Volts IXYS Reserves the Right to Change Limits, Test Conditions, and Dimensions. T D = 0.01 Single Pulse 0.01 1.E-07 1.E-06 1.E-05 1.E-04 1.E-03 Pulse Width - Second 1.E-02 1.E-01 1.E+00 IXYP10N65C3 Fig. 13. Inductive Switching Energy Loss vs. Gate Resistance 0.6 0.5 2.4 Eon - Eoff 0.5 Fig. 14. Inductive Switching Energy Loss vs. Collector Current Eoff --2.0 TJ = 150ºC , VGE = 15V 1.6 VCE = 400V I C = 20A 1.2 0.2 0.8 Eoff - MilliJoules 1.6 TJ = 150ºC 0.3 1.2 0.2 0.8 TJ = 25ºC 0.1 0.1 I C 60 70 80 90 100 110 0.0 0.0 120 0.0 4 6 8 10 0.6 55 1.2 50 tfi 0.2 0.6 I C = 10A 0.0 75 100 td(off) - - - - 125 120 I 40 I 35 30 0.2 150 25 C 50 80 60 70 80 tfi td(off) - - - - VCE = 400V 130 50 120 45 90 TJ = 150ºC 30 80 25 70 TJ = 25ºC 15 12 14 16 IC - Amperes © 2015 IXYS CORPORATION, All Rights Reserved 18 20 t f i - Nanoseconds 35 10 100 40 120 110 110 tfi td(off) - - - - 100 RG = 50Ω , VGE = 15V VCE = 400V 40 35 90 80 I C = 10A I 30 C = 20A 70 25 60 60 20 50 50 15 25 50 75 100 TJ - Degrees Centigrade 125 40 150 t d(off) - Nanoseconds 100 t d(off) - Nanoseconds t f i - Nanoseconds 110 40 8 90 Fig. 18. Inductive Turn-off Switching Times vs. Junction Temperature RG = 50Ω , VGE = 15V 6 100 RG - Ohms 55 4 = 10A 60 Fig. 17. Inductive Turn-off Switching Times vs. Collector Current 20 C = 20A TJ - Degrees Centigrade 45 140 TJ = 150ºC, VGE = 15V 45 0.4 0.1 50 20 t d(off) - Nanoseconds 0.8 E on - MilliJoules 1.0 0.3 50 18 VCE = 400V I C = 20A 0.4 25 16 160 ---- RG = 50Ω , VGE = 15V VCE = 400V E off - MilliJoules 1.4 t f i - Nanoseconds Eon 14 Fig. 16. Inductive Turn-off Switching Times vs. Gate Resistance Fig. 15. Inductive Switching Energy Loss vs. Junction Temperature Eoff 12 IC - Amperes RG - Ohms 0.5 0.4 0.4 = 10A 0.0 50 Eon - MilliJoules 0.4 Eon - MilliJoules Eoff - MilliJoules ---- RG = 50Ω , VGE = 15V 0.4 VCE = 400V 0.3 Eon 2.0 IXYP10N65C3 Fig. 19. Inductive Turn-on Switching Times vs. Gate Resistance 160 tri 140 td(on) - - - - Fig. 20. Inductive Turn-on Switching Times vs. Collector Current 80 90 70 80 TJ = 150ºC, VGE = 15V = 20A 80 50 40 60 I C = 10A 30 40 20 20 10 0 50 60 70 80 90 100 110 t r i - Nanoseconds C td(on) - - - - 28 26 VCE = 400V 60 24 TJ = 25ºC 50 22 40 20 TJ = 150ºC 30 18 20 16 10 14 0 0 120 t d(on) - Nanoseconds I 100 tri RG = 50Ω , VGE = 15V 70 60 VCE = 400V t d(on) - Nanoseconds t r i - Nanoseconds 120 30 12 4 6 8 10 12 14 16 18 20 IC - Amperes RG - Ohms Fig. 21. Inductive Turn-on Switching Times vs. Junction Temperature 100 32 tri 90 80 30 28 VCE = 400V 70 I C = 20A 26 60 24 50 22 40 20 30 18 I C = 10A 20 10 25 50 75 100 125 t d(on) - Nanoseconds t r i - Nanoseconds td(on) - - - - RG = 50Ω , VGE = 15V 16 14 150 TJ - Degrees Centigrade Fig. 22. Cauer Thermal Network i 1 2 3 Ri (°C/W) 0.314390 0.289260 0.090928 Ci (J/°C) 0.00097276 0.00981820 0.07681600 IXYS Reserves the Right to Change Limits, Test Conditions, and Dimensions. IXYS REF: IXY_10N65C3(1D)5-24-13 Disclaimer Notice - Information furnished is believed to be accurate and reliable. However, users should independently evaluate the suitability of and test each product selected for their own applications. Littelfuse products are not designed for, and may not be used in, all applications. Read complete Disclaimer Notice at www.littelfuse.com/disclaimer-electronics.