IXYP10N65C3D1

Preliminary Technical Information IXYP10N65C3D1 XPTTM 650V IGBT GenX3TM w/Diode VCES = IC110 = VCE(sat)  tfi(typ) = Extreme Light Punch Through IGBT for 20-60kHz Switching 650V 10A 2.50V 23ns TO-220 Symbol Test Conditions Maximum Ratings VCES VCGR TJ = 25°C to 175°C TJ = 25°C to 175°C, RGE = 1M 650 650 V V VGES VGEM Continuous Transient ±20 ±30 V V G = Gate E = Emitter IC25 IC110 IF110 ICM TC TC TC TC 30 10 9 54 A A A A Features IA EAS TC = 25°C TC = 25°C 5 50 A mJ  SSOA (RBSOA) VGE = 15V, TVJ = 150°C, RG = 50 Clamped Inductive Load ICM = 20 VCE  VCES A  tsc (SCSOA) VGE = 15V, VCE = 360V, TJ = 150°C RG = 150, Non Repetitive 8 μs PC TC = 25°C 160 W -55 ... +175 175 -55 ... +175 °C °C °C 300 260 °C °C 1.13/10 Nm/lb.in. 2.5 g = 25°C = 110°C = 110°C = 25°C, 1ms TJ TJM Tstg TL TSOLD Maximum Lead Temperature for Soldering 1.6 mm (0.062in.) from Case for 10s Md Mounting Torque Weight G        BVCES IC = 250A, VGE = 0V 650  VGE(th) IC = 250A, VCE = VGE 3.5 ICES VCE = VCES, VGE = 0V VCE = 0V, VGE = 20V VCE(sat) IC = 10A, VGE = 15V, Note 1 TJ = 150C © 2016 IXYS CORPORATION, All Rights Reserved  6.0 V 10 200 A A 100 nA TJ = 150C IGES  V 2.27 2.54 2.50 C = Collector Tab = Collector Optimized for 20-60kHz Switching Square RBSOA Avalanche Rated Anti-Parallel Fast Diode Short Circuit Capability International Standard Package High Power Density Extremely Rugged Low Gate Drive Requirement Applications  Characteristic Values Min. Typ. Max. Tab Advantages  Symbol Test Conditions (TJ = 25C, Unless Otherwise Specified) CE     Power Inverters UPS Motor Drives SMPS PFC Circuits Battery Chargers Welding Machines Lamp Ballasts High Frequency Power Inverters V V DS100600C(6/16) IXYP10N65C3D1 Symbol Test Conditions (TJ = 25°C Unless Otherwise Specified) Characteristic Values Min. Typ. Max. gfs 3.8 IC = 10A, VCE = 10V, Note 1 Cies Coes Cres VCE = 25V, VGE = 0V, f = 1MHz Qg(on) Qge Qgc IC = 10A, VGE = 15V, VCE = 0.5 • VCES td(on) tri Eon td(off) tfi Eoff td(on) tri Eon td(off) tfi Eoff Inductive load, TJ = 25°C IC = 10A, VGE = 15V VCE = 400V, RG = 50 Note 2 Inductive load, TJ = 150°C IC = 10A, VGE = 15V VCE = 400V, RG = 50 Note 2 RthJC RthCS TO-220 Outline 6.2 S 423 42 10 pF pF pF 18 4 8 nC nC nC 20 26 0.24 77 23 0.11 ns ns mJ ns ns mJ 0.17 17 27 0.44 90 38 0.15 ns ns mJ ns ns mJ 0.50 0.94 °C/W °C/W Pins: 1 - Gate 3 - Emitter 2 - Collector Reverse Diode (FRED) Symbol Test Conditions (TJ = 25C, Unless Otherwise Specified) Characteristic Values Min. Typ. Max. VF IF = 10A, VGE = 0V, Note 1 TJ = 150C 1.5 V V IRM IF = 10A, VGE = 0V, -diF/dt = 200A/μs, VR = 400V, TJ = 150°C 6.3 A 170 ns trr 2.5 RthJC Notes: 2.30 °C/W 1. Pulse test, t  300μs, duty cycle, d  2%. 2. Switching times & energy losses may increase for higher VCE(clamp), TJ or RG. PRELIMANARY TECHNICAL INFORMATION The product presented herein is under development. The Technical Specifications offered are derived from a subjective evaluation of the design, based upon prior knowledge and experience, and constitute a "considered reflection" of the anticipated result. IXYS reserves the right to change limits, test conditions, and dimensions without notice. IXYS Reserves the Right to Change Limits, Test Conditions, and Dimensions. IXYS MOSFETs and IGBTs are covered 4,835,592 by one or more of the following U.S. patents: 4,860,072 4,881,106 4,931,844 5,017,508 5,034,796 5,049,961 5,063,307 5,187,117 5,237,481 5,381,025 5,486,715 6,162,665 6,259,123 B1 6,306,728 B1 6,404,065 B1 6,534,343 6,583,505 6,683,344 6,727,585 7,005,734 B2 6,710,405 B2 6,759,692 7,063,975 B2 6,710,463 6,771,478 B2 7,071,537 7,157,338B2 IXYP10N65C3D1 Fig. 1. Output Characteristics @ TJ = 25ºC 20 VGE = 15V 13V 12V 18 16 40 VGE = 15V 35 14V 11V 30 I C - Amperes 14 I C - Amperes Fig. 2. Extended Output Characteristics @ TJ = 25ºC 45 12 10 10V 8 6 4 13V 25 12V 20 15 11V 10 10V 5 9V 9V 2 8V 0 0 0.5 1 1.5 2 2.5 3 3.5 4 8V 0 4.5 0 5 10 15 20 2.2 VGE = 15V 14V 13V 12V 1.8 14 I C - Amperes 30 VGE = 15V 2.0 VCE(sat) - Normalized 16 25 Fig. 4. Dependence of VCE(sat) on Junction Temperature Fig. 3. Output Characteristics @ TJ = 150ºC 18 20 VCE - Volts VCE - Volts 11V 12 10 10V 8 9V 6 1.6 I C = 20A 1.4 1.2 I C = 10A 1.0 0.8 4 8V 0.6 2 7V 0 0 0.5 1 1.5 2 2.5 3 3.5 4 I C = 5A 0.4 -50 4.5 -25 0 25 VCE - Volts 50 75 100 125 150 TJ - Degrees Centigrade Fig. 5. Collector-to-Emitter Voltage vs. Gate-to-Emitter Voltage Fig. 6. Input Admittance 20 8 TJ = 25ºC 18 7 16 14 I C - Amperes VCE - Volts 6 5 I C = 20A 4 12 10 TJ = 150ºC 25ºC - 40ºC 8 6 3 10A 4 2 2 5A 1 0 9 10 11 12 13 VGE - Volts © 2016 IXYS CORPORATION, All Rights Reserved 14 15 5 6 7 8 VGE - Volts 9 10 11 175 IXYP10N65C3D1 Fig. 7. Transconductance 9 TJ = - 40ºC VCE = 10V 8 VCE = 325V 14 7 25ºC 12 150ºC 10 I C = 10A I G = 1mA 6 VGE - Volts g f s - Siemens Fig. 8. Gate Charge 16 5 4 3 8 6 2 4 1 2 0 0 0 2 4 6 1,000 8 10 12 14 16 18 20 0 2 4 6 8 10 12 14 16 I C - Amperes QG - NanoCoulombs Fig. 9. Capacitance Fig. 10. Reverse-Bias Safe Operating Area 18 Cies 16 100 I C - Amperes Capacitance - PicoFarads 20 Coes 10 Cres 12 8 TJ = 150ºC 4 RG = 50Ω dv / dt < 10V / ns f = 1 MHz 1 0 5 10 15 20 25 30 35 0 100 10 40 VCE - Volts 200 300 400 500 600 Fig. 13. Maximum Transient Thermal Impedance Fig. 12. Maximum Transient Thermal Impedance (IGBT) Fig. 11. Forward-Bias Safe Operating Area 100 AAAAA 2 VCE(sat) Limit I D - Amperes 25µs 100µs Z (th)JC - ºC / W 1 10 D = 0.5 D = 0.2 0.1 D = tp / T D = 0.1 tp D = 0.05 1 TJ = 175ºC D = 0.02 1ms TC = 25ºC Single Pulse DC 0.1 1 700 VCE - Volts 10 100 10ms 1000 VDS - Volts IXYS Reserves the Right to Change Limits, Test Conditions, and Dimensions. T D = 0.01 Single Pulse 0.01 1.E-07 1.E-06 1.E-05 1.E-04 1.E-03 Pulse Width - Second 1.E-02 1.E-01 1.E+00 IXYP10N65C3D1 Fig. 14. Inductive Switching Energy Loss vs. Collector Current Fig. 13. Inductive Switching Energy Loss vs. Gate Resistance 0.6 Eoff 0.5 Eon - 0.5 2.4 2.0 Eoff --2.0 TJ = 150ºC , VGE = 15V 0.4 1.6 I C = 20A 1.2 0.2 0.8 Eoff - MilliJoules 1.6 TJ = 150ºC 0.3 1.2 0.2 0.8 Eon - MilliJoules 0.4 E on - MilliJoules Eoff - MilliJoules ---- VCE = 400V VCE = 400V 0.3 Eon RG = 50Ω , VGE = 15V TJ = 25ºC 0.1 0.1 0.0 50 60 0.4 0.4 I C = 10A 70 80 90 100 110 0.0 0.0 120 0.0 4 6 8 10 RG - Ohms Eon 1.4 55 18 20 1.2 50 160 tfi ---- RG = 50Ω , VGE = 15V td(off) - - - 140 TJ = 150ºC, VGE = 15V VCE = 400V I C = 20A 1.0 on 0.8 0.2 0.6 - MilliJoules 0.3 45 120 40 100 I C = 10A I C = 20A 35 80 I C = 10A 0.4 30 0.2 150 25 0.1 0.0 25 50 75 100 125 60 50 60 70 80 TJ - Degrees Centigrade td(off) - - - - 130 50 120 45 RG = 50Ω , VGE = 15V VCE = 400V 100 35 90 TJ = 150ºC 30 80 25 70 TJ = 25ºC 20 15 4 6 8 10 12 14 110 40 120 16 I C - Amperes © 2016 IXYS CORPORATION, All Rights Reserved 18 20 110 tfi td(off) - - - - 100 RG = 50Ω , VGE = 15V VCE = 400V 40 35 90 80 I C = 10A I C = 20A 30 70 25 60 60 20 50 50 15 25 50 75 100 TJ - Degrees Centigrade 125 40 150 t d(off) - Nanoseconds 40 t f i - Nanoseconds 110 t d(off) - Nanoseconds t f i - Nanoseconds 45 100 Fig. 18. Inductive Turn-off Switching Times vs. Junction Temperature 55 tfi 90 RG - Ohms Fig. 17. Inductive Turn-off Switching Times vs. Collector Current 50 t d(off) - Nanoseconds 0.4 t f i - Nanoseconds VCE = 400V E Eoff - MilliJoules 16 Fig. 16. Inductive Turn-off Switching Times vs. Gate Resistance 0.6 Eoff 14 I C - Amperes Fig. 15. Inductive Switching Energy Loss vs. Junction Temperature 0.5 12 IXYP10N65C3D1 Fig. 19. Inductive Turn-on Switching Times vs. Gate Resistance 160 tri 140 td(on) - - - - Fig. 20. Inductive Turn-on Switching Times vs. Collector Current 80 90 70 80 TJ = 150ºC, VGE = 15V VCE = 400V 80 40 60 I C = 10A 30 40 20 20 10 0 50 60 70 80 90 100 t r i - Nanoseconds 50 28 26 VCE = 400V 60 24 TJ = 25ºC 50 22 40 20 TJ = 150ºC 30 18 20 16 10 14 0 0 120 110 td(on) - - - - t d(on) - Nanoseconds I C = 20A 100 tri RG = 50Ω , VGE = 15V 70 60 t d(on) - Nanoseconds t r i - Nanoseconds 120 30 12 4 6 8 10 12 14 16 18 20 I C - Amperes RG - Ohms Fig. 21. Inductive Turn-on Switching Times vs. Junction Temperature 100 32 tri 90 td(on) - - - - 30 RG = 50Ω , VGE = 15V 28 VCE = 400V 70 26 I C = 20A 60 24 50 22 40 20 30 18 I C = 10A 20 16 10 25 50 75 100 t d(on) - Nanoseconds t r i - Nanoseconds 80 14 150 125 TJ - Degrees Centigrade Fig. 22. Diode Forward Characteristics Fig. 23. Reverse Recovery Charge vs. -diF/dt 30 0.9 25 0.8 TJ = 150ºC VR = 400V IF = 20A 0.7 QRR (µC) I F (A) 20 TJ = 150ºC 15 TJ = 25ºC 0.6 10A 0.5 10 0.4 5 5A 0.3 0 0.2 0 0.5 1 1.5 2 2.5 3 VF (V) IXYS Reserves the Right to Change Limits, Test Conditions, and Dimensions. 100 200 300 400 500 -diF/ dt (A/µs) 600 700 800 900 IXYP10N65C3D1 Fig. 24. Reverse Recovery Current vs. -diF/dt Fig. 25. Reverse Recovery Time vs. -diF/dt 200 20 TJ = 150ºC 18 16 VR = 400V 10A IF = 20A 160 5A 14 140 t RR (ns) I RR (A) TJ = 150ºC 180 VR = 400V 12 10 120 IF = 20A 100 8 10A 80 6 60 4 2 5A 40 100 200 300 400 500 600 700 800 100 900 diF/dt (A/µs) 10 Fig. 26. Dynamic Parameters QRR, IRR vs. Junction Temperature 1.1 1.0 VR = 400V 0.9 IF = 10A -diF /dt = 200A/µs Fig. Impedance 200 22. Maximum 300 400Transient 500 Thermal 600 700 800 -di(Diode) /dt (A/µs) F 900 Fig. 27. Maximum Transient Thermal Impedance (Diode) aaaa 4 Z (th)JC - ºC / W 0.8 KF 0.7 0.6 0.5 KF IRR D = 0.5 1 D = tp / T D = 0.2 tp 0.4 D = 0.1 0.3 D = 0.05 T KF QRR 0.2 0.1 0 20 40 60 80 100 120 140 160 0.1 1.E-06 D = 0.02 D = 0.01 Single Pulse 1.E-05 1.E-04 TJ (ºC) 1.E-03 1.E-02 1.E-01 1.E+00 Pulse Width - Second Fig. 28. Cauer Thermal Network IGBT i 1 2 3 Ri (°C/W) 0.314390 0.289260 0.090928 Ci (J/°C) 0.00097276 0.00981820 0.07681600 DIODE i 1 2 3 © 2016 IXYS CORPORATION, All Rights Reserved Ri (°C/W) 0.862020 0.650090 0.192070 Ci (J/°C) 0.00082372 0.00427340 0.05408700 IXYS REF: IXY_10N65C3(1D-R47) 01-23-15-B Disclaimer Notice - Information furnished is believed to be accurate and reliable. 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