IXYP10N65C3D1M

Preliminary Technical Information IXYP10N65C3D1M XPTTM 650V IGBT GenX3TM w/Diode (Electrically Isolated Tab) VCES = IC110 = VCE(sat)  tfi(typ) = 650V 7A 2.6V 23ns Extreme Light Punch Through IGBT for 20-60kHz Switching OVERMOLDED TO-220 Symbol Test Conditions Maximum Ratings VCES VCGR TJ = 25°C to 175°C TJ = 25°C to 175°C, RGE = 1M 650 650 V V VGES VGEM Continuous Transient ±20 ±30 V V IC25 IC110 IF110 ICM TC TC TC TC 15 7 13 50 A A A A IA EAS TC = 25°C TC = 25°C 5 100 A mJ SSOA (RBSOA) VGE = 15V, TVJ = 150°C, RG = 50 Clamped Inductive Load ICM = 20 @VCE  VCES A tsc (SCSOA) VGE = 15V, VCE = 360V, TJ = 150°C RG = 150, Non Repetitive 8 μs PC TC = 25°C = 25°C = 110°C = 110°C = 25°C, 1ms Maximum Lead Temperature for Soldering 1.6 mm (0.062in.) from Case for 10s VISOL 50/60 Hz, 1 Minute Md Mounting Torque Weight E G = Gate E = Emitter Isolated Tab C = Collector Features    TJ TJM Tstg TL TSOLD GC  Optimized for 20-60kHz Switching Plastic Overmolded Tab for Electrical Isolation Square RBSOA Avalanche Rated Anti-Parallel Fast Diode Short Circuit Capability 2500V~ Electrical Isolation International Standard Package 53 W -55 ... +175 175 -55 ... +175 °C °C °C 300 260 °C °C Advantages 2500 V~  1.13 / 10 Nm/lb.in 2.5 g       High Power Density Extremely Rugged Low Gate Drive Requirement Applications Symbol Test Conditions (TJ = 25C, Unless Otherwise Specified) Characteristic Values Min. Typ. Max. BVCES IC = 250A, VGE = 0V 650 VGE(th) IC = 250A, VCE = VGE 3.5 ICES VCE = VCES, VGE = 0V VCE = 0V, VGE = 20V VCE(sat) IC = 10A, VGE = 15V, Note 1 TJ = 150C © 2018 IXYS CORPORATION, All Rights Reserved  V 6.0 V 10 400 A A 100 nA TJ = 150C IGES  2.27 2.54 2.60 V V        Power Inverters UPS Motor Drives SMPS PFC Circuits Battery Chargers Welding Machines Lamp Ballasts High Frequency Power Inverters DS100605B(11/18) IXYP10N65C3D1M Symbol Test Conditions (TJ = 25°C Unless Otherwise Specified) Characteristic Values Min. Typ. Max. gfs 3.8 IC = 10A, VCE = 10V, Note 1 Cies Coes Cres VCE = 25V, VGE = 0V, f = 1MHz Qg(on) Qge Qgc IC = 10A, VGE = 15V, VCE = 0.5 • VCES td(on) tri Eon td(off) tfi Eoff td(on) tri Eon td(off) tfi Eoff Inductive load, TJ = 25°C IC = 10A, VGE = 15V VCE = 400V, RG = 50 Note 2 Inductive load, TJ = 150°C IC = 10A, VGE = 15V VCE = 400V, RG = 50 Note 2 RthJC RthCS OVERMOLDED TO-220 (IXYP) Outline 6.2 S 423 42 10 pF pF pF 18 4 8 nC nC nC 20 26 0.24 77 23 0.11 ns ns mJ ns ns mJ 0.17 17 27 0.44 90 38 0.15 ns ns mJ ns ns mJ 0.50 2.83 °C/W °C/W Pins: 1 - Gate 2 - Collector 3 - Emitter Reverse Diode (FRED) Symbol Test Conditions (TJ = 25C, Unless Otherwise Specified) Characteristic Values Min. Typ. Max. VF IF = 10A, VGE = 0V, Note 1 TJ = 125C 1.7 V V IRM IF = 12A, VGE = 0V, -diF/dt = 100A/μs, VR = 100V, TJ = 125°C 2.5 A 110 ns 30 ns trr trr 3.0 IF = 1A, VGE = 0V, -diF/dt = 100A/μs, VR = 30V RthJC Notes: 4.0 °C/W 1. Pulse test, t  300μs, duty cycle, d  2%. 2. Switching times & energy losses may increase for higher VCE(clamp), TJ or RG. PRELIMANARY TECHNICAL INFORMATION The product presented herein is under development. The Technical Specifications offered are derived from a subjective evaluation of the design, based upon prior knowledge and experience, and constitute a "considered reflection" of the anticipated result. IXYS reserves the right to change limits, test conditions, and dimensions without notice. IXYS Reserves the Right to Change Limits, Test Conditions, and Dimensions. IXYS MOSFETs and IGBTs are covered 4,835,592 by one or more of the following U.S. patents: 4,860,072 4,881,106 4,931,844 5,017,508 5,034,796 5,049,961 5,063,307 5,187,117 5,237,481 5,381,025 5,486,715 6,162,665 6,259,123 B1 6,306,728 B1 6,404,065 B1 6,534,343 6,583,505 6,683,344 6,727,585 7,005,734 B2 6,710,405 B2 6,759,692 7,063,975 B2 6,710,463 6,771,478 B2 7,071,537 7,157,338B2 IXYP10N65C3D1M o o Fig. 1. Output Characteristics @ TJ = 25 C Fig. 2. Extended Output Characteristics @ TJ = 25 C 20 45 VGE = 15V 13V 12V 18 16 40 14V 11V 30 I C - Amperes 14 I C - Amperes VGE = 15V 35 12 10 10V 8 6 4 13V 25 12V 20 15 11V 10 10V 5 9V 9V 2 8V 0 0 0.5 1 1.5 2 2.5 3 3.5 8V 0 4 0 4.5 5 10 15 2.2 20 VGE = 15V 14V 13V 12V VGE = 15V 2.0 VCE(sat) - Normalized 1.8 14 I C - Amperes 30 Fig. 4. Dependence of VCE(sat) on Junction Temperature o Fig. 3. Output Characteristics @ TJ = 150 C 16 25 VCE - Volts VCE - Volts 18 20 11V 12 10 10V 8 9V 6 1.6 I C = 20A 1.4 1.2 I C = 10A 1.0 0.8 4 8V I C = 5A 0.6 2 7V 0 0 0.5 1 1.5 2 2.5 3 3.5 4 0.4 4.5 -50 -25 0 25 VCE - Volts 50 75 100 125 150 TJ - Degrees Centigrade Fig. 5. Collector-to-Emitter Voltage vs. Gate-to-Emitter Voltage Fig. 6. Input Admittance 20 8 o TJ = 25 C 7 18 16 14 I C - Amperes VCE - Volts 6 5 I C = 20A 4 12 10 o TJ = 150 C 8 o 25 C o 6 3 10A - 40 C 4 2 2 5A 1 9 10 11 12 13 VGE - Volts © 2018 IXYS CORPORATION, All Rights Reserved 0 14 15 5 6 7 8 VGE - Volts 9 10 11 175 IXYP10N65C3D1M Fig. 7. Transconductance Fig. 8. Gate Charge 9 16 o TJ = - 40 C VCE = 10V 8 25 C o 12 o 10 I C = 10A I G = 1mA 6 150 C 5 V GE - Volts g f s - Siemens 7 VCE = 325V 14 4 8 6 3 4 2 2 1 0 0 0 2 4 6 8 10 12 14 16 18 20 0 2 4 6 8 10 12 14 16 I C - Amperes QG - NanoCoulombs Fig. 9. Capacitance Fig. 10. Reverse-Bias Safe Operating Area 18 1,000 20 Capacitance - PicoFarads Cies 16 I C - Amperes 100 Coes 10 12 8 Cres o TJ = 150 C 4 RG = 50Ω dv / dt < 10V / ns f = 1 MHz 1 0 5 10 15 20 25 30 35 0 40 100 200 300 VCE - Volts 400 500 600 700 VCE - Volts Fig. 12. Maximum Transient Thermal Impedance (IGBT) Fig. 11. Forward-Bias Safe Operating Area 10 100 VCE(sat) Limit 10ms 100ms 25μs 100μs 1s 1 DC 1ms 0.1 Z (th)JC - K / W I D - Amperes 10 1 o TJ = 175 C o TC = 25 C Single Pulse 0.01 1 10 100 1000 VDS - Volts IXYS Reserves the Right to Change Limits, Test Conditions, and Dimensions. 0.1 0.0001 0.001 0.01 0.1 1 Pulse Width - Seconds 10 100 1000 IXYP10N65C3D1M Fig. 14. Inductive Switching Energy Loss vs. Collector Current Fig. 13. Inductive Switching Energy Loss vs. Gate Resistance 0.6 0.5 2.4 Eoff 0.5 2.0 Eoff Eon 2.0 o TJ = 150 C , VGE = 15V 0.4 I C = 20A 1.2 0.2 0.8 E off - MilliJoules 1.6 o TJ = 150 C 0.3 1.2 0.2 0.8 Eon - MilliJoules 0.4 E on - MilliJoules E off - MilliJoules 1.6 VCE = 400V VCE = 400V 0.3 Eon RG = 50Ω , VGE = 15V o TJ = 25 C 0.1 0.1 0.0 50 60 70 80 90 100 110 0.0 0.0 120 0.0 4 6 8 10 RG - Ohms 1.4 55 16 18 20 1.2 50 160 tfi Eon RG = 50Ω , VGE = 15V 140 on 0.8 0.2 0.6 - MilliJoules 0.3 45 120 40 100 I C = 10A I C = 20A 35 80 I C = 10A 0.4 30 0.2 150 25 0.1 0.0 25 50 75 100 125 60 50 60 70 80 TJ - Degrees Centigrade tfi td(off) 120 VCE = 400V TJ = 150 C 30 80 25 70 o TJ = 25 C 15 6 8 10 12 14 16 I C - Amperes © 2018 IXYS CORPORATION, All Rights Reserved 18 20 t f i - Nanoseconds 90 o td(off) 100 RG = 50Ω , VGE = 15V VCE = 400V 40 35 90 80 I C = 10A I C = 20A 30 70 25 60 60 20 50 50 15 25 50 75 100 TJ - Degrees Centigrade 125 40 150 t d(off) - Nanoseconds 100 t d(off) - Nanoseconds t f i - Nanoseconds 110 40 4 40 120 110 tfi 45 RG = 50Ω , VGE = 15V 20 110 50 130 35 100 Fig. 18. Inductive Turn-off Switching Times vs. Junction Temperature 55 45 90 RG - Ohms Fig. 17. Inductive Turn-off Switching Times vs. Collector Current 50 t d(off) - Nanoseconds E 1.0 t f i - Nanoseconds VCE = 400V I C = 20A 0.4 td(off) o TJ = 150 C, VGE = 15V VCE = 400V Eoff - MilliJoules 14 Fig. 16. Inductive Turn-off Switching Times vs. Gate Resistance 0.6 0.5 12 I C - Amperes Fig. 15. Inductive Switching Energy Loss vs. Junction Temperature Eoff 0.4 0.4 I C = 10A IXYP10N65C3D1M Fig. 19. Inductive Turn-on Switching Times vs. Gate Resistance 160 tri 140 td(on) 80 90 70 80 Fig. 20. Inductive Turn-on Switching Times vs. Collector Current tri o TJ = 150 C, VGE = 15V VCE = 400V 40 60 I C = 10A 30 40 20 20 10 0 50 60 70 80 90 100 110 t r i - Nanoseconds 80 50 0 120 60 90 24 o TJ = 25 C 50 22 40 20 o TJ = 150 C 30 18 20 16 10 14 0 12 4 6 8 10 12 14 16 18 20 I C - Amperes Fig. 21. Inductive Turn-on Switching Times vs. Junction Temperature tri 26 VCE = 400V RG - Ohms 100 28 t d(on) - Nanoseconds I C = 20A 100 td(on) RG = 50Ω , VGE = 15V 70 60 t d(on) - Nanoseconds t r i - Nanoseconds 120 30 td(on) 32 30 RG = 50Ω , VGE = 15V 28 VCE = 400V 70 I C = 20A 26 60 24 50 22 40 20 30 18 I C = 10A 20 10 25 50 75 100 125 t d(on) - Nanoseconds t r i - Nanoseconds 80 16 14 150 TJ - Degrees Centigrade Fig. 22. Maximum Transient Thermal Impedance (DIODE) Z (th)JC - K / W 10 1 0.1 0.0001 0.001 0.01 0.1 1 10 100 Pulse Width - Seconds IXYS Reserves the Right to Change Limits, Test Conditions, and Dimensions. IXYS REF: IXY_10N65C3(1D)3-11-14-A Disclaimer Notice - Information furnished is believed to be accurate and reliable. However, users should independently evaluate the suitability of and test each product selected for their own applications. Littelfuse products are not designed for, and may not be used in, all applications. 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