IXYP15N65C3

Preliminary Technical Information IXYP15N65C3 XPTTM 650V IGBT GenX3TM VCES = IC110 = VCE(sat)  tfi(typ) = Extreme Light Punch Through IGBT for 20-60kHz Switching 650V 15A 2.5V 28ns TO-220 Symbol Test Conditions Maximum Ratings VCES VCGR TJ = 25°C to 175°C TJ = 25°C to 175°C, RGE = 1M 650 650 V V VGES VGEM Continuous Transient ±20 ±30 V V IC25 IC110 ICM TC = 25°C TC = 110°C TC = 25°C, 1ms 38 15 80 A A A IA EAS TC = 25°C TC = 25°C 5 100 A mJ SSOA (RBSOA) VGE = 15V, TVJ = 150°C, RG = 20 Clamped Inductive Load ICM = 30 @VCE  VCES A tsc (SCSOA) VGE = 15V, VCE = 360V, TJ = 150°C RG = 82, Non Repetitive 8 μs PC TC = 25°C Maximum Lead Temperature for Soldering 1.6 mm (0.062in.) from Case for 10s Md Mounting Torque  W -55 ... +175 175 -55 ... +175 °C °C °C 300 260 °C °C 1.13/10 Nm/lb.in. 3 g Weight      BVCES IC = 250A, VGE = 0V 650 VGE(th) IC = 250A, VCE = VGE 3.5 ICES VCE = VCES, VGE = 0V VCE = 0V, VGE = 20V VCE(sat) IC = 15A, VGE = 15V, Note 1 TJ = 150C © 2014 IXYS CORPORATION, All Rights Reserved    6.0 V  10 150 A A  100 nA TJ = 150C IGES  V 1.96 2.45 2.50 Optimized for 20-60kHz Switching Square RBSOA Avalanche Rated Short Circuit Capability International Standard Package High Power Density Extremely Rugged Low Gate Drive Requirement Applications  Characteristic Values Min. Typ. Max. C = Collector Tab = Collector Advantages  Symbol Test Conditions (TJ = 25C, Unless Otherwise Specified) Tab Features  200 CE G = Gate E = Emitter  TJ TJM Tstg TL TSOLD G  Power Inverters UPS Motor Drives SMPS PFC Circuits Battery Chargers Welding Machines Lamp Ballasts High Frequency Power Inverters V V DS100542A(7/14) IXYP15N65C3 Symbol Test Conditions (TJ = 25°C Unless Otherwise Specified) Characteristic Values Min. Typ. Max. gfs 5.0 IC = 15A, VCE = 10V, Note 1 Cies Coes Cres VCE = 25V, VGE = 0V, f = 1MHz Qg(on) Qge Qgc IC = 15A, VGE = 15V, VCE = 0.5 • VCES td(on) tri Eon td(off) tfi Eoff td(on) tri Eon td(off) tfi Eoff Inductive load, TJ = 25°C IC = 15A, VGE = 15V VCE = 400V, RG = 20 Note 2 Inductive load, TJ = 150°C IC = 15A, VGE = 15V VCE = 400V, RG = 20 Note 2 RthJC RthCS Notes: TO-220 (IXYP) Outline 8.5 S 583 37 13 pF pF pF 19 4 10 nC nC nC 15 20 0.27 68 28 0.23 ns ns mJ ns ns mJ 0.40 15 21 0.53 80 42 0.24 ns ns mJ ns ns mJ 0.50 0.75 °C/W °C/W Pins: 1 - Gate 2 - Collector 3 - Emitter 1. Pulse test, t  300μs, duty cycle, d  2%. 2. Switching times & energy losses may increase for higher VCE(clamp), TJ or RG. PRELIMANARY TECHNICAL INFORMATION The product presented herein is under development. The Technical Specifications offered are derived from a subjective evaluation of the design, based upon prior knowledge and experience, and constitute a "considered reflection" of the anticipated result. IXYS reserves the right to change limits, test conditions, and dimensions without notice. IXYS Reserves the Right to Change Limits, Test Conditions, and Dimensions. IXYS MOSFETs and IGBTs are covered 4,835,592 by one or more of the following U.S. patents: 4,860,072 4,881,106 4,931,844 5,017,508 5,034,796 5,049,961 5,063,307 5,187,117 5,237,481 5,381,025 5,486,715 6,162,665 6,259,123 B1 6,306,728 B1 6,404,065 B1 6,534,343 6,583,505 6,683,344 6,727,585 7,005,734 B2 6,710,405 B2 6,759,692 7,063,975 B2 6,710,463 6,771,478 B2 7,071,537 7,157,338B2 IXYP15N65C3 Fig. 1. Output Characteristics @ T J = 25ºC Fig. 2. Extended Output Characteristics @ T J = 25ºC 30 VGE = 15V 14V 13V 12V 25 VGE = 15V 60 15 10V 10 14V 50 11V 20 IC - Amperes IC - Amperes 70 13V 40 12V 30 11V 9V 20 8V 10 7V 0 10V 5 0 0 0.5 1 1.5 2 2.5 3 3.5 9V 8V 0 5 10 15 25 30 Fig. 4. Dependence of VCE(sat) on Junction Temperature Fig. 3. Output Characteristics @ T J = 150ºC 30 2.0 VGE = 15V 14V 13V 12V 25 VGE = 15V 1.8 VCE(sat) - Normalized 11V 20 IC - Amperes 20 VCE - Volts VCE - Volts 10V 15 9V 10 1.6 I 1.4 I 1.2 C = 15A 1.0 I 8V 5 = 30A C C = 7.5A 0.8 7V 0.6 0 0 0.5 1 1.5 2 2.5 3 3.5 4 -50 4.5 -25 0 25 VCE - Volts Fig. 5. Collector-to-Emitter Voltage vs. Gate-to-Emitter Voltage 75 100 125 150 175 12 13 Fig. 6. Input Admittance 40 8 TJ = 25ºC 7 35 30 IC - Amperes 6 VCE - Volts 50 TJ - Degrees Centigrade 5 I C = 7.5A 15A 30A 4 3 25 20 TJ = 150ºC 25ºC - 40ºC 15 10 2 5 1 0 8 9 10 11 12 VGE - Volts © 2014 IXYS CORPORATION, All Rights Reserved 13 14 15 5 6 7 8 9 VGE - Volts 10 11 IXYP15N65C3 Fig. 8. Gate Charge Fig. 7. Transconductance 16 11 TJ = - 40ºC 10 9 25ºC 150ºC VGE - Volts 7 I C = 15A I G = 10mA 12 8 g f s - Siemens VCE = 325V 14 6 5 10 8 4 6 3 4 2 2 1 0 0 0 5 10 15 20 25 30 0 35 2 4 6 8 10 12 14 16 18 20 QG - NanoCoulombs IC - Amperes Fig. 9. Capacitance Fig. 10. Reverse-Bias Safe Operating Area 35 1,000 30 Capacitance - PicoFarads Cies IC - Amperes 25 100 Coes 20 15 10 TJ = 150ºC 5 Cres f = 1 MHz 10 0 5 10 15 20 25 30 35 40 RG = 20Ω dv / dt < 10V / ns 0 100 200 300 VCE - Volts 400 500 600 700 VCE - Volts Fig. 11. Maximum Transient Thermal Impedance Z(th)JC - ºC / W 1 0.1 0.01 0.00001 0.0001 0.001 Pulse Width - Second IXYS Reserves the Right to Change Limits, Test Conditions, and Dimensions. 0.01 0.1 1 IXYP15N65C3 Fig. 13. Inductive Switching Energy Loss vs. Collector Current Fig. 12. Inductive Switching Energy Loss vs. Gate Resistance 1.0 Eon - --- 0.8 1.8 Eoff 0.8 TJ = 150ºC , VGE = 15V 4 VCE = 400V 0.4 2 I 0.2 C = 15A ---- 1.6 1.4 VCE = 400V 0.6 1.2 0.5 1.0 TJ = 150ºC 0.4 0.8 0.3 0.6 0.2 1 0.4 TJ = 25ºC 0.1 0.0 20 30 40 50 60 70 80 90 0.2 0.0 0 100 0.0 8 10 12 14 16 Fig. 14. Inductive Switching Energy Loss vs. Junction Temperature 1.0 2.0 1.5 I C = 30A 0.4 1.0 0.2 0.5 I C = 15A 0.0 75 100 160 40 140 35 I 25 80 20 60 50 110 45 30 40 50 80 90 40 100 tfi 15 IC - Amperes © 2014 IXYS CORPORATION, All Rights Reserved 28 30 VCE = 400V t f i - Nanoseconds 80 35 75 I C = 15A 30 70 25 65 I C = 30A 50 15 55 40 10 20 26 85 60 60 24 td(off) - - - - 20 25 22 70 25 50 75 100 TJ - Degrees Centigrade 125 50 150 t d(off) - Nanoseconds 70 20 60 90 40 100 80 18 120 RG = 20Ω , VGE = 15V TJ = 25ºC 16 = 30A 100 20 t d(off) - Nanoseconds t f i - Nanoseconds td(off) - - - - 35 14 C 30 120 90 12 = 15A 45 RG = 20Ω , VGE = 15V 40 10 C Fig. 17. Inductive Turn-off Switching Times vs. Junction Temperature VCE = 400V 8 220 RG - Ohms tfi 30 30 180 I 15 0.0 150 125 55 45 28 200 VCE = 400V Fig. 16. Inductive Turn-off Switching Times vs. Collector Current TJ = 150ºC 26 td(off) - - - - TJ - Degrees Centigrade 50 24 t d(off) - Nanoseconds 0.6 50 22 TJ = 150ºC, VGE = 15V 50 t f i - Nanoseconds VCE = 400V 25 tfi 55 E on - MilliJoules E off - MilliJoules ---- RG = 20Ω , VGE = 15V 0.8 20 Fig. 15. Inductive Turn-off Switching Times vs. Gate Resistance 60 2.5 Eon 18 IC - Amperes RG - Ohms Eoff Eon - MilliJoules 3 0.7 Eon - MilliJoules I C = 30A 0.6 Eon RG = 20Ω , VGE = 15V Eoff - MilliJoules Eoff Eoff - MilliJoules 0.9 5 IXYP15N65C3 Fig. 19. Inductive Turn-on Switching Times vs. Collector Current Fig. 18. Inductive Turn-on Switching Times vs. Gate Resistance 160 60 80 tri 140 td(on) - - - - 70 C = 30A 40 60 30 40 20 I 20 C = 15A 10 0 30 40 50 60 70 t r i - Nanoseconds t r i - Nanoseconds I 80 80 90 40 18 TJ = 125ºC, 25ºC 30 16 20 14 10 12 0 0 100 t d(on) - Nanoseconds 50 20 VCE = 400V t d(on) - Nanoseconds 100 td(on) - - - - RG = 20Ω , VGE = 15V 60 VCE = 400V 20 tri 50 TJ = 150ºC, VGE = 15V 120 22 10 8 10 12 14 16 18 20 22 24 26 28 30 IC - Amperes RG - Ohms Fig. 20. Inductive Turn-on Switching Times vs. Junction Temperature 70 19 tri 60 td(on) - - - 18 RG = 20Ω , VGE = 15V I C = 30A 50 17 40 16 30 15 I C = 15A 20 14 10 25 50 75 100 t d(on) - Nanoseconds t r i - Nanoseconds VCE = 400V 125 13 150 TJ - Degrees Centigrade IXYS Reserves the Right to Change Limits, Test Conditions, and Dimensions. IXYS REF: IXY_15N65C3(31)5-21-13 Disclaimer Notice - Information furnished is believed to be accurate and reliable. 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