IXYP15N65C3D1

Preliminary Technical Information IXYA15N65C3D1 IXYP15N65C3D1 XPTTM 650V IGBT GenX3TM w/Diode VCES = IC110 = VCE(sat)  tfi(typ) = Extreme Light Punch Through IGBT for 20-60kHz Switching 650V 15A 2.5V 28ns TO-263 AA (IXYA) G Symbol Test Conditions Maximum Ratings VCES VCGR TJ = 25°C to 175°C TJ = 25°C to 175°C, RGE = 1M 650 650 V V VGES VGEM Continuous Transient ±20 ±30 V V IC25 IC110 IF110 ICM TC TC TC TC 38 15 23 80 A A A A IA EAS TC = 25°C TC = 25°C 5 100 A mJ SSOA (RBSOA) VGE = 15V, TVJ = 150°C, RG = 20 Clamped Inductive Load ICM = 30 @VCE  VCES A tsc (SCSOA) VGE = 15V, VCE = 360V, TJ = 150°C RG = 82, Non Repetitive 8 μs PC TC = 25°C 200 W -55 ... +175 175 -55 ... +175 °C °C °C 300 260 °C °C 1.13/10 10..65 / 2.2..14.6 Nm/lb.in N/lb = 25°C = 110°C = 110°C = 25°C, 1ms Maximum Lead Temperature for Soldering 1.6 mm (0.062in.) from Case for 10s Md FC Mounting Torque (TO-220) Mounting Force (TO-263) C (Tab) TO-220AB (IXYP) G TO-263 TO-220 2.5 3.0 g g Symbol Test Conditions (TJ = 25C, Unless Otherwise Specified) Characteristic Values Min. Typ. Max. BVCES IC = 250A, VGE = 0V 650 VGE(th) IC = 250A, VCE = VGE 3.5 ICES VCE = VCES, VGE = 0V IGES VCE = 0V, VGE = 20V VCE(sat) IC = 15A, VGE = 15V, Note 1 TJ = 150C 6.0 V 10 400 A A 100 nA © 2015 IXYS CORPORATION, All Rights Reserved 1.96 2.45 2.50 C = Collector Tab = Collector      Optimized for 20-60kHz Switching Square RBSOA Avalanche Rated Anti-Parallel Fast Diode Short Circuit Capability International Standard Packages Advantages   High Power Density Extremely Rugged Low Gate Drive Requirement Applications V TJ = 150C C (Tab) Features  Weight CE G = Gate E = Emitter  TJ TJM Tstg TL TSOLD E V V          Power Inverters UPS Motor Drives SMPS PFC Circuits Battery Chargers Welding Machines Lamp Ballasts High Frequency Power Inverters DS100575B(02/15) IXYA15N65C3D1 IXYP15N65C3D1 Symbol Test Conditions (TJ = 25°C Unless Otherwise Specified) Characteristic Values Min. Typ. Max. gfs 5.0 IC = 15A, VCE = 10V, Note 1 Cies Coes Cres VCE = 25V, VGE = 0V, f = 1MHz Qg(on) Qge Qgc IC = 15A, VGE = 15V, VCE = 0.5 • VCES td(on) tri Eon td(off) tfi Eoff td(on) tri Eon td(off) tfi Eoff RthJC RthCS Inductive load, TJ = 25°C IC = 15A, VGE = 15V VCE = 400V, RG = 20 Note 2 Inductive load, TJ = 150°C IC = 15A, VGE = 15V VCE = 400V, RG = 20 Note 2 TO-220 TO-263 Outline 8.5 S 583 52 13 pF pF pF 19 4 10 nC nC nC 15 20 0.27 68 28 0.23 ns ns mJ ns ns mJ 0.40 15 21 0.53 80 42 0.24 ns ns mJ ns ns mJ 0.50 0.75 °C/W °C/W 1. 2. 3. 4. Gate Collector Emitter Collector Bottom Side Dim. Millimeter Min. Max. Inches Min. Max. A b b2 4.06 0.51 1.14 4.83 0.99 1.40 .160 .020 .045 .190 .039 .055 c c2 0.40 1.14 0.74 1.40 .016 .045 .029 .055 D D1 8.64 8.00 9.65 8.89 .340 .280 .380 .320 E 9.65 10.41 .380 .405 E1 e L L1 L2 L3 L4 6.22 2.54 14.61 2.29 1.02 1.27 0 8.13 BSC 15.88 2.79 1.40 1.78 0.13 .270 .100 .575 .090 .040 .050 0 .320 BSC .625 .110 .055 .070 .005 TO-220 Outline Reverse Diode (FRED) Symbol Test Conditions (TJ = 25C, Unless Otherwise Specified) Characteristic Values Min. Typ. Max. VF IF = 10A, VGE = 0V, Note 1 TJ = 125C 1.7 V V IRM IF = 12A, VGE = 0V, -diF/dt = 100A/μs, VR = 100V, TJ = 125°C 2.5 A 110 ns 30 ns trr trr 3.0 IF = 1A, VGE = 0V, -diF/dt = 100A/μs, VR = 30V RthJC Notes: 1.85 °C/W Pins: 1 - Gate 2,4 - Collector 3 - Emitter 1. Pulse test, t  300μs, duty cycle, d  2%. 2. Switching times & energy losses may increase for higher VCE(clamp), TJ or RG. PRELIMINARY TECHNICAL INFORMATION The product presented herein is under development. The Technical Specifications offered are derived from a subjective evaluation of the design, based upon prior knowledge and experience, and constitute a "considered reflection" of the anticipated result. IXYS reserves the right to change limits, test conditions, and dimensions without notice. IXYS Reserves the Right to Change Limits, Test Conditions, and Dimensions. IXYS MOSFETs and IGBTs are covered 4,835,592 by one or more of the following U.S. patents: 4,860,072 4,881,106 4,931,844 5,017,508 5,034,796 5,049,961 5,063,307 5,187,117 5,237,481 5,381,025 5,486,715 6,162,665 6,259,123 B1 6,306,728 B1 6,404,065 B1 6,534,343 6,583,505 6,683,344 6,727,585 7,005,734 B2 6,710,405 B2 6,759,692 7,063,975 B2 6,710,463 6,771,478 B2 7,071,537 7,157,338B2 IXYA15N65C3D1 IXYP15N65C3D1 Fig. 1. Output Characteristics @ TJ = 25ºC 30 VGE = 15V 14V 13V 12V VGE = 15V 60 15 10V 10 14V 50 11V 20 I C - Amperes I C - Amperes 25 Fig. 2. Extended Output Characteristics @ TJ = 25ºC 70 9V 13V 40 12V 30 11V 20 10V 5 10 8V 7V 0 0 0.5 1 1.5 2 2.5 3 9V 8V 0 0 3.5 5 10 15 VGE = 15V 1.8 V CE(sat) - Normalized 11V 20 I C - Amperes 30 2.0 VGE = 15V 14V 13V 12V 25 25 Fig. 4. Dependence of VCE(sat) on Junction Temperature Fig. 3. Output Characteristics @ TJ = 150ºC 30 20 VCE - Volts VCE - Volts 10V 15 9V 10 1.6 I C = 30A 1.4 I C = 15A 1.2 1.0 I C = 7.5A 8V 5 0.8 7V 0.6 0 0 0.5 1 1.5 2 2.5 3 3.5 4 -50 4.5 -25 0 25 VCE - Volts Fig. 5. Collector-to-Emitter Voltage vs. Gate-to-Emitter Voltage 75 100 125 150 175 Fig. 6. Input Admittance 40 8 TJ = 25ºC 7 35 30 I C - Amperes 6 VCE - Volts 50 TJ - Degrees Centigrade 5 I C = 7.5A 15A 30A 4 3 25 20 TJ = 150ºC 25ºC - 40ºC 15 10 2 5 1 0 8 9 10 11 12 VGE - Volts © 2015 IXYS CORPORATION, All Rights Reserved 13 14 15 5 6 7 8 9 VGE - Volts 10 11 12 13 IXYA15N65C3D1 IXYP15N65C3D1 Fig. 8. Gate Charge Fig. 7. Transconductance 11 10 16 TJ = - 40ºC VCE = 10V 25ºC 150ºC VGE - Volts 7 I C = 15A I G = 10mA 12 8 g f s - Siemens VCE = 325V 14 9 6 5 4 3 10 8 6 4 2 2 1 0 0 0 5 10 15 20 25 30 0 35 2 4 6 I C - Amperes Fig. 9. Capacitance 1,000 8 10 12 14 16 18 20 QG - NanoCoulombs Fig. 10. Reverse-Bias Safe Operating Area 35 25 I C - Amperes Capacitance - PicoFarads 30 Cies 100 Coes 20 15 10 TJ = 150ºC Cres 5 f = 1 MHz 10 0 5 10 15 20 25 30 35 40 RG = 20Ω dv / dt < 10V / ns 0 100 200 300 400 500 600 700 VCE - Volts VCE - Volts Fig. 11. Maximum Transient Thermal Impedance Z(th)JC - ºC / W 1 0.1 0.01 0.00001 0.0001 0.001 Pulse Width - Second IXYS Reserves the Right to Change Limits, Test Conditions, and Dimensions. 0.01 0.1 1 IXYA15N65C3D1 IXYP15N65C3D1 Fig. 13. Inductive Switching Energy Loss vs. Collector Current Fig. 12. Inductive Switching Energy Loss vs. Gate Resistance 1.0 Eon - --- 0.8 1.8 Eoff 0.8 TJ = 150ºC , VGE = 15V 4 VCE = 400V 3 0.4 2 I C = 15A 0.2 ---- 1.6 1.4 VCE = 400V 0.6 1.2 0.5 1.0 TJ = 150ºC 0.4 0.8 0.3 0.6 0.2 1 0.4 TJ = 25ºC 0.1 0.0 20 30 40 50 60 70 80 90 0.2 0.0 0 100 0.0 8 10 12 14 16 18 RG - Ohms tfi 0.4 1.0 0.2 0.5 I C = 15A 0.0 100 180 VCE = 400V I C = 15A 45 160 40 140 35 I C = 30A 100 25 80 20 60 20 30 40 50 tfi 50 110 45 TJ = 25ºC 70 tfi 20 22 24 I C - Amperes © 2015 IXYS CORPORATION, All Rights Reserved 26 28 30 VCE = 400V 80 35 75 I C = 15A 30 70 25 65 I C = 30A 50 15 55 40 10 20 18 85 60 60 16 td(off) - - - - 20 25 15 t f i - Nanoseconds 80 14 40 100 25 50 75 100 TJ - Degrees Centigrade 125 50 150 t d(off) - Nanoseconds 35 12 90 90 40 100 90 10 80 RG = 20Ω , VGE = 15V t d(off) - Nanoseconds t f i - Nanoseconds td(off) - - - - 120 RG = 20Ω , VGE = 15V 40 8 70 Fig. 17. Inductive Turn-off Switching Times vs. Junction Temperature VCE = 400V 30 60 RG - Ohms 55 45 120 30 Fig. 16. Inductive Turn-off Switching Times vs. Collector Current TJ = 150ºC 200 15 0.0 150 125 td(off) - - - - TJ - Degrees Centigrade 50 30 t d(off) - Nanoseconds I C = 30A - MilliJoules 1.5 t f i - Nanoseconds 50 on 0.6 75 28 TJ = 150ºC, VGE = 15V 2.0 VCE = 400V 50 26 220 55 E Eoff - MilliJoules ---- RG = 20Ω , VGE = 15V 25 24 60 2.5 0.8 22 Fig. 15. Inductive Turn-off Switching Times vs. Gate Resistance 1.0 Eon 20 I C - Amperes Fig. 14. Inductive Switching Energy Loss vs. Junction Temperature Eoff Eon - MilliJoules 0.6 0.7 E on - MilliJoules I C = 30A Eon RG = 20Ω , VGE = 15V E off - MilliJoules Eoff Eoff - MilliJoules 0.9 5 IXYA15N65C3D1 IXYP15N65C3D1 Fig. 18. Inductive Turn-on Switching Times vs. Gate Resistance 160 Fig. 19. Inductive Turn-on Switching Times vs. Collector Current 60 80 tri 140 td(on) - - - - tri 70 50 TJ = 150ºC, VGE = 15V I C = 30A 80 40 60 30 40 20 I C = 15A 20 10 0 20 30 40 50 60 t r i - Nanoseconds 50 70 80 90 20 VCE = 400V 0 100 40 18 TJ = 125ºC, 25ºC 30 16 20 14 10 12 0 t d(on) - Nanoseconds 100 td(on) - - - - RG = 20Ω , VGE = 15V 60 VCE = 400V t d(on) - Nanoseconds t r i - Nanoseconds 120 22 10 8 10 12 14 16 18 20 22 24 26 28 30 I C - Amperes RG - Ohms Fig. 20. Inductive Turn-on Switching Times vs. Junction Temperature 70 19 tri 60 td(on) - - - 18 RG = 20Ω , VGE = 15V I C = 30A 50 17 40 16 30 15 I C = 15A 20 14 10 10 25 t d(on) - Nanoseconds t r i - Nanoseconds VCE = 400V 50 75 100 13 Fig. 21. Maximum Transient Thermal Impedance for Diode 125 150 TJ - Degrees Centigrade Fig. 21. Maximum Transient Impedance for Diode Z(th)JC - ºC / W 3 1 0.1 0.0001 0.001 0.01 0.1 1 Pulse Width - Second IXYS Reserves the Right to Change Limits, Test Conditions, and Dimensions. 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