IXYP15N65C3D1M

Preliminary Technical Information IXYP15N65C3D1M XPTTM 650V IGBT GenX3TM w/Diode (Electrically Isolated Tab) VCES = IC110 = VCE(sat)  tfi(typ) = 650V 9A 2.5V 28ns Extreme Light Punch Through IGBT for 20-60kHz Switching OVERMOLDED TO-220 Symbol Test Conditions Maximum Ratings VCES VCGR TJ = 25°C to 175°C TJ = 25°C to 175°C, RGE = 1M 650 650 V V VGES VGEM Continuous Transient ±20 ±30 V V IC25 IC110 IF110 ICM TC TC TC TC 18 9 13 80 A A A A IA EAS TC = 25°C TC = 25°C 5 100 A mJ SSOA (RBSOA) VGE = 15V, TVJ = 150°C, RG = 20 Clamped Inductive Load ICM = 30 @VCE  VCES A 8 μs = 25°C = 110°C = 110°C = 25°C, 1ms tsc (SCSOA) VGE = 15V, VCE = 360V, TJ = 150°C RG = 82, Non Repetitive PC TC = 25°C Maximum Lead Temperature for Soldering 1.6 mm (0.062in.) from Case for 10s VISOL 50/60 Hz, 1 Minute Md Mounting Torque  Weight W -55 ... +175 175 -55 ... +175 °C °C °C 300 260 °C °C 2500 V~ 1.13 / 10 Nm/lb.in 2.5 g Isolated Tab C = Collector Features  57 E G = Gate E = Emitter  TJ TJM Tstg TL TSOLD GC     Optimized for 20-60kHz Switching Plastic Overmolded Tab for Electrical Isolation Square RBSOA Avalanche Rated Anti-Parallel Fast Diode 2500V~ Electrical Isolation Short Circuit Capability Advantages    High Power Density Extremely Rugged Low Gate Drive Requirement Applications Symbol Test Conditions (TJ = 25C, Unless Otherwise Specified) Characteristic Values Min. Typ. Max. BVCES IC = 250A, VGE = 0V 650 VGE(th) IC = 250A, VCE = VGE 3.5 ICES VCE = VCES, VGE = 0V VCE = 0V, VGE = 20V VCE(sat) IC   V 6.0 V 10 400 A A 100 nA TJ = 150C IGES  = 15A, VGE = 15V, Note 1 TJ = 150C © 2018IXYS CORPORATION, All Rights Reserved 1.96 2.45 2.50       Power Inverters UPS Motor Drives SMPS PFC Circuits Battery Chargers Welding Machines Lamp Ballasts High Frequency Power Inverters V V DS100549C(11/18) IXYP15N65C3D1M Symbol Test Conditions (TJ = 25°C Unless Otherwise Specified) Characteristic Values Min. Typ. Max. gfs 5.0 IC = 15A, VCE = 10V, Note 1 Cies Coes Cres VCE = 25V, VGE = 0V, f = 1MHz Qg(on) Qge Qgc IC = 15A, VGE = 15V, VCE = 0.5 • VCES td(on) tri Eon td(off) tfi Eoff td(on) tri Eon td(off) tfi Eoff Inductive load, TJ = 25°C IC = 15A, VGE = 15V VCE = 400V, RG = 20 Note 2 8.5 S 583 52 13 pF pF pF 19 4 10 nC nC nC 15 20 0.27 68 28 0.23 ns ns mJ ns ns mJ 0.40 15 21 0.53 80 42 0.24 Inductive load, TJ = 150°C IC = 15A, VGE = 15V VCE = 400V, RG = 20 Note 2 OVERMOLDED TO-220 (IXYP) Outline RthJC Pins: 1 - Gate 2 - Collector 3 - Emitter ns ns mJ ns ns mJ 2.63 °C/W Reverse Diode (FRED) Symbol Test Conditions (TJ = 25C, Unless Otherwise Specified) Characteristic Values Min. Typ. Max. VF IF = 10A, VGE = 0V, Note 1 TJ = 125C 1.7 V V IRM IF = 12A, VGE = 0V, -diF/dt = 100A/μs, VR = 100V, TJ = 125°C 2.5 A 110 ns 30 ns trr trr 3.0 IF = 1A, VGE = 0V, -diF/dt = 100A/μs, VR = 30V RthJC Notes: 4.0 °C/W 1. Pulse test, t  300μs, duty cycle, d  2%. 2. Switching times & energy losses may increase for higher VCE(clamp), TJ or RG. PRELIMANARY TECHNICAL INFORMATION The product presented herein is under development. The Technical Specifications offered are derived from a subjective evaluation of the design, based upon prior knowledge and experience, and constitute a "considered reflection" of the anticipated result. IXYS reserves the right to change limits, test conditions, and dimensions without notice. IXYS Reserves the Right to Change Limits, Test Conditions, and Dimensions. IXYS MOSFETs and IGBTs are covered 4,835,592 by one or more of the following U.S. patents: 4,860,072 4,881,106 4,931,844 5,017,508 5,034,796 5,049,961 5,063,307 5,187,117 5,237,481 5,381,025 5,486,715 6,162,665 6,259,123 B1 6,306,728 B1 6,404,065 B1 6,534,343 6,583,505 6,683,344 6,727,585 7,005,734 B2 6,710,405 B2 6,759,692 7,063,975 B2 6,710,463 6,771,478 B2 7,071,537 7,157,338B2 IXYP15N65C3D1M o o Fig. 1. Output Characteristics @ TJ = 25 C Fig. 2. Extended Output Characteristics @ TJ = 25 C 30 25 VGE = 15V 60 15 10V 10 14V 50 11V 20 I C - Amperes I C - Amperes 70 VGE = 15V 14V 13V 12V 13V 40 12V 30 11V 9V 20 8V 10 7V 0 10V 5 0 0 0.5 1 1.5 2 2.5 3 3.5 9V 8V 0 5 10 15 30 30 2.0 VGE = 15V 14V 13V 12V VGE = 15V 1.8 VCE(sat) - Normalized 11V 20 I C - Amperes 25 Fig. 4. Dependence of VCE(sat) on Junction Temperature o Fig. 3. Output Characteristics @ TJ = 150 C 25 20 VCE - Volts VCE - Volts 10V 15 9V 10 1.6 I C = 30A 1.4 I C = 15A 1.2 1.0 I C = 7.5A 8V 5 0.8 7V 0.6 0 0 0.5 1 1.5 2 2.5 3 3.5 4 -50 4.5 -25 0 25 VCE - Volts 50 75 100 125 150 175 TJ - Degrees Centigrade Fig. 5. Collector-to-Emitter Voltage vs. Gate-to-Emitter Voltage Fig. 6. Input Admittance 40 8 o TJ = 25 C 7 35 30 I C - Amperes VCE - Volts 6 5 I C = 7.5A 15A 30A 4 25 20 o TJ = 150 C 15 o 25 C o 3 - 40 C 10 2 5 1 0 8 9 10 11 12 VGE - Volts © 2018IXYS CORPORATION, All Rights Reserved 13 14 15 5 6 7 8 9 VGE - Volts 10 11 12 13 IXYP15N65C3D1M Fig. 7. Transconductance 11 10 TJ = - 40 C VCE = 10V VCE = 325V 14 9 o 25 C 8 I C = 15A I G = 10mA 12 o 150 C 7 V GE - Volts g f s - Siemens Fig. 8. Gate Charge 16 o 6 5 10 8 4 6 3 4 2 2 1 0 0 0 5 10 15 20 25 30 0 35 2 4 I C - Amperes 6 8 10 12 14 16 18 20 QG - NanoCoulombs Fig. 10. Reverse-Bias Safe Operating Area Fig. 9. Capacitance 35 1,000 25 I C - Amperes Capacitance - PicoFarads 30 Cies 100 Coes 20 15 10 o TJ = 150 C Cres RG = 20Ω dv / dt < 10V / ns 5 f = 1 MHz 0 10 0 5 10 15 20 25 30 35 40 100 200 300 400 500 600 700 VCE - Volts VCE - Volts Fig. 11. Maximum Transient Thermal Impedance ( IGBT) 10 Z(th)JC - K / W 1 0.1 0.01 0.00001 0.0001 0.001 0.01 Pulse Width - Seconds IXYS Reserves the Right to Change Limits, Test Conditions, and Dimensions. 0.1 1 10 100 IXYP15N65C3D1M Fig. 13. Inductive Switching Energy Loss vs. Collector Current Fig. 12. Inductive Switching Energy Loss vs. Gate Resistance 1.0 0.9 5 Eoff Eon 1.8 Eoff 0.8 4 3 0.4 2 I C = 15A 0.2 1.4 VCE = 400V 0.6 1.2 0.5 1.0 o TJ = 150 C 0.4 0.8 0.3 0.6 0.2 1 0.4 o TJ = 25 C 0.1 0.0 20 30 40 50 60 70 80 90 0.2 0.0 0 100 0.0 8 10 12 14 16 18 1.0 2.0 td(off) 0.2 t f i - Nanoseconds 1.0 - MilliJoules 0.4 0.5 I C = 15A 0.0 75 100 I C = 15A 45 160 40 140 35 I C = 30A 100 25 80 20 60 20 30 40 50 Fig. 16. Inductive Turn-off Switching Times vs. Collector Current 120 tfi 110 45 100 40 35 80 o TJ = 25 C 70 90 tfi 18 20 22 24 I C - Amperes © 2018IXYS CORPORATION, All Rights Reserved 26 28 30 85 RG = 20Ω , VGE = 15V VCE = 400V 80 35 75 I C = 15A 30 70 25 65 I C = 30A 50 15 55 40 10 20 16 td(off) 60 60 14 40 100 20 25 15 t f i - Nanoseconds 90 12 90 25 50 75 100 TJ - Degrees Centigrade 125 50 150 t d(off) - Nanoseconds 40 t d(off) - Nanoseconds t f i - Nanoseconds td(off) VCE = 400V 45 80 50 RG = 20Ω , VGE = 15V o 70 Fig. 17. Inductive Turn-off Switching Times vs. Junction Temperature 55 TJ = 150 C 60 RG - Ohms TJ - Degrees Centigrade 50 120 30 15 0.0 150 125 180 VCE = 400V t d(off) - Nanoseconds 1.5 I C = 30A 10 30 200 TJ = 150 C, VGE = 15V 50 on 0.6 8 28 o VCE = 400V 30 26 220 tfi 55 E Eoff - MilliJoules Eon RG = 20Ω , VGE = 15V 50 24 60 2.5 25 22 Fig. 15. Inductive Turn-off Switching Times vs. Gate Resistance Fig. 14. Inductive Switching Energy Loss vs. Junction Temperature 0.8 20 I C - Amperes RG - Ohms Eoff Eon - MilliJoules I C = 30A 0.6 0.7 E off - MilliJoules VCE = 400V E on - MilliJoules E off - MilliJoules 0.8 1.6 RG = 20Ω , VGE = 15V o TJ = 150 C , VGE = 15V Eon IXYP15N65C3D1M Fig. 18. Inductive Turn-on Switching Times vs. Gate Resistance 160 Fig. 19. Inductive Turn-on Switching Times vs. Collector Current 60 80 tri 140 td(on) 70 40 60 30 40 20 I C = 15A 20 10 0 30 40 50 60 70 t r i - Nanoseconds t r i - Nanoseconds I C = 30A 80 80 90 40 18 o o TJ = 125 C, 25 C 30 16 20 14 10 12 0 0 100 t d(on) - Nanoseconds 50 20 VCE = 400V t d(on) - Nanoseconds 100 td(on) RG = 20Ω , VGE = 15V 60 VCE = 400V 20 tri 50 o TJ = 150 C, VGE = 15V 120 22 10 8 10 12 14 16 18 20 22 24 26 28 30 I C - Amperes RG - Ohms Fig. 20. Inductive Turn-on Switching Times vs. Junction Temperature 70 19 tri 60 td(on) 18 RG = 20Ω , VGE = 15V I C = 30A 50 17 40 16 30 15 I C = 15A 20 14 10 25 50 75 100 t d(on) - Nanoseconds t r i - Nanoseconds VCE = 400V 125 13 150 TJ - Degrees Centigrade Fig. 21. Maximum Transient Thermal Impedance (Diode) Z (th)JC - K / W 10 1 0.1 0.0001 0.001 0.01 0.1 1 10 100 Pulse Width - Seconds IXYS Reserves the Right to Change Limits, Test Conditions, and Dimensions. IXYS REF: IXY_15N65C3(31)7-30-13-A Disclaimer Notice - Information furnished is believed to be accurate and reliable. However, users should independently evaluate the suitability of and test each product selected for their own applications. Littelfuse products are not designed for, and may not be used in, all applications. Read complete Disclaimer Notice at www.littelfuse.com/disclaimer-electronics.