IXYP20N65C3D1

IXYA20N65C3D1 IXYP20N65C3D1 XPTTM 650V IGBT GenX3TM w/Diode VCES = IC110 = VCE(sat)  tfi(typ) = Extreme Light Punch Through IGBT for 20-60kHz Switching 650V 20A 2.50V 28ns TO-263 AA (IXYA) G Symbol Test Conditions Maximum Ratings VCES VCGR TJ = 25°C to 175°C TJ = 25°C to 175°C, RGE = 1M 650 650 V V VGES VGEM Continuous Transient ±20 ±30 V V IC25 IC110 IF110 ICM TC TC TC TC 50 20 18 105 A A A A IA EAS TC = 25°C TC = 25°C 10 200 A mJ SSOA (RBSOA) VGE = 15V, TVJ = 150°C, RG = 20 Clamped Inductive Load ICM = 40 VCE  VCES A tsc (SCSOA) VGE = 15V, VCE = 360V, TJ = 150°C RG = 82, Non Repetitive 10 μs PC TC = 25°C 200 W = 25°C = 110°C = 110°C = 25°C, 1ms E C (Tab) TO-220AB (IXYP) G G = Gate E = Emitter -55 ... +175 175 -55 ... +175 °C °C °C  300 260 °C °C 1.13/10 10..65 / 2.2..14.6 Nm/lb.in N/lb 2.5 3.0 g g     TL TSOLD Maximum Lead Temperature for Soldering 1.6 mm (0.062in.) from Case for 10s Md FC Mounting Torque (TO-220) Mounting Force (TO-263) Weight TO-263 TO-220 Symbol Test Conditions (TJ = 25C, Unless Otherwise Specified) Characteristic Values Min. Typ. Max. BVCES IC = 250A, VGE = 0V 650 VGE(th) IC = 250A, VCE = VGE 3.5 ICES VCE = VCES, VGE = 0V IGES VCE = 0V, VGE = 20V VCE(sat) IC 6.0 V 10 400 A A 100 nA © 2015 IXYS CORPORATION, All Rights Reserved 2.27 2.44 2.50 Optimized for 20-60kHz Switching Square RBSOA Avalanche Rated Anti-Parallel Fast Diode Short Circuit Capability International Standard Packages Advantages     = 20A, VGE = 15V, Note 1 TJ = 150C C = Collector Tab = Collector High Power Density Extremely Rugged Low Gate Drive Requirement Applications V TJ = 150C C (Tab) Features  TJ TJM Tstg CE V V         Power Inverters UPS Motor Drives SMPS PFC Circuits Battery Chargers Welding Machines Lamp Ballasts High Frequency Power Inverters DS100576C(3/15) IXYA20N65C3D1 IXYP20N65C3D1 Symbol Test Conditions (TJ = 25°C Unless Otherwise Specified) Characteristic Values Min. Typ. Max. gfs 7 IC = 20A, VCE = 10V, Note 1 Cies Coes Cres VCE = 25V, VGE = 0V, f = 1MHz Qg(on) Qge Qgc IC = 20A, VGE = 15V, VCE = 0.5 • VCES td(on) tri Eon td(off) tfi Eoff td(on) tri Eon td(off) tfi Eoff RthJC RthCS Inductive load, TJ = 25°C IC = 20A, VGE = 15V VCE = 400V, RG = 20 Note 2 Inductive load, TJ = 150°C IC = 20A, VGE = 15V VCE = 400V, RG = 20 Note 2 TO-220 TO-263 Outline 12 S 822 67 19 pF pF pF 30 6 15 nC nC nC 19 34 0.43 80 28 0.35 ns ns mJ ns ns mJ 0.65 18 33 0.70 96 36 0.40 ns ns mJ ns ns mJ 0.50 0.65 °C/W °C/W 1. 2. 3. 4. Gate Collector Emitter Collector Bottom Side Dim. Millimeter Min. Max. Inches Min. Max. A b b2 4.06 0.51 1.14 4.83 0.99 1.40 .160 .020 .045 .190 .039 .055 c c2 0.40 1.14 0.74 1.40 .016 .045 .029 .055 D D1 8.64 8.00 9.65 8.89 .340 .280 .380 .320 E 9.65 10.41 .380 .405 E1 e L L1 L2 L3 L4 6.22 2.54 14.61 2.29 1.02 1.27 0 8.13 BSC 15.88 2.79 1.40 1.78 0.13 .270 .100 .575 .090 .040 .050 0 .320 BSC .625 .110 .055 .070 .005 TO-220 Outline Reverse Diode (FRED) Symbol Test Conditions (TJ = 25C, Unless Otherwise Specified) Characteristic Values Min. Typ. Max. VF IF = 20A, VGE = 0V, Note 1 TJ = 150C 1.5 V V IRM IF = 20A, VGE = 0V, -diF/dt = 300A/μs, VR = 400V, TJ = 150°C 11 A 135 ns trr 2.5 Pins: RthJC Notes: 1.85 °C/W 1 - Gate 2,4 - Collector 3 - Emitter 1. Pulse test, t  300μs, duty cycle, d  2%. 2. Switching times & energy losses may increase for higher VCE(clamp), TJ or RG. IXYS Reserves the Right to Change Limits, Test Conditions, and Dimensions. IXYS MOSFETs and IGBTs are covered 4,835,592 by one or more of the following U.S. patents: 4,860,072 4,881,106 4,931,844 5,017,508 5,034,796 5,049,961 5,063,307 5,187,117 5,237,481 5,381,025 5,486,715 6,162,665 6,259,123 B1 6,306,728 B1 6,404,065 B1 6,534,343 6,583,505 6,683,344 6,727,585 7,005,734 B2 6,710,405 B2 6,759,692 7,063,975 B2 6,710,463 6,771,478 B2 7,071,537 7,157,338B2 IXYA20N65C3D1 IXYP20N65C3D1 Fig. 2. Extended Output Characteristics @ TJ = 25ºC Fig. 1. Output Characteristics @ TJ = 25ºC 40 100 VGE = 15V 13V 12V 35 VGE = 15V 11V 30 14V 25 I C - Amperes I C - Amperes 80 10V 20 15 10 13V 60 12V 40 11V 9V 10V 20 5 9V 8V 7V 0 8V 0 0 0.5 1 1.5 2 2.5 3 3.5 4 4.5 0 10 15 20 25 VCE - Volts Fig. 3. Output Characteristics @ TJ = 150ºC Fig. 4. Dependence of VCE(sat) on Junction Temperature 40 2.0 VGE = 15V 14V 13V 12V 35 30 VGE = 15V 1.8 30 11V VCE(sat) - Normalized I C - Amperes 5 VCE - Volts 25 10V 20 15 9V 10 1.6 I C = 40A 1.4 1.2 I C = 20A 1.0 8V 0.8 5 I C = 10A 7V 0.6 0 0 0.5 1 1.5 2 2.5 3 3.5 4 -50 4.5 -25 0 VCE - Volts 50 75 100 125 150 175 12 13 TJ - Degrees Centigrade Fig. 5. Collector-to-Emitter Voltage vs. Gate-to-Emitter Voltage 8 25 Fig. 6. Input Admittance 60 TJ = 25ºC 7 50 6 I C - Amperes VCE - Volts 40 5 I C = 40A 4 30 TJ = 150ºC 25ºC 20 3 - 40ºC 20A 10 2 10A 0 1 8 9 10 11 12 VGE - Volts © 2015 IXYS CORPORATION, All Rights Reserved 13 14 15 4 5 6 7 8 9 VGE - Volts 10 11 IXYA20N65C3D1 IXYP20N65C3D1 Fig. 8. Gate Charge Fig. 7. Transconductance 16 16 TJ = - 40ºC VCE = 10V 14 25ºC 12 10 I C = 20A I G = 10mA 12 150ºC V GE - Volts g f s - Siemens VCE = 325V 14 8 6 10 8 6 4 4 2 2 0 0 0 5 10 15 20 25 30 35 40 45 0 50 4 8 I C - Amperes Fig. 9. Capacitance 10,000 16 20 24 28 32 Fig. 10. Reverse-Bias Safe Operating Area f = 1 MHz 40 Cies 1,000 30 I C - Amperes Capacitance - PicoFarads 12 QG - NanoCoulombs Coes 100 20 10 TJ = 150ºC RG = 20Ω dv / dt < 10V / ns Cres 0 10 0 5 10 15 20 25 30 35 100 40 200 300 400 500 600 700 VCE - Volts VCE - Volts Fig. 12. Maximum Transient Thermal Impedance (IGBT) Fig. 11. Forward-Bias Safe Operating Area 1000 1 VCE(sat) Limit D = 0.5 25µs 10 100µs 1 TJ = 175ºC 1ms TC = 25ºC Single Pulse DC 0.1 1 Z(th)JC - ºC / W I D - Amperes 100 10 100 D = 0.2 0.1 D = 0.1 D = tp / T D = 0.05 tp D = 0.02 D = 0.01 T Single Pulse 10ms 1000 VDS - Volts IXYS Reserves the Right to Change Limits, Test Conditions, and Dimensions. 0.01 1.E-06 1.E-05 1.E-04 1.E-03 1.E-02 Pulse Width - Second 1.E-01 1.E+00 IXYA20N65C3D1 IXYP20N65C3D1 Fig. 13. Inductive Switching Energy Loss vs. Gate Resistance Fig. 14. Inductive Switching Energy Loss vs. Collector Current 1.6 --- 6 1.0 2.4 Eoff Eon 5 0.8 3 TJ = 150ºC 0.8 1.6 0.6 1.2 TJ = 25ºC 0.4 0.8 0.2 0.4 2 I C = 20A 0.4 1 0.2 20 30 40 50 60 70 80 90 0.0 0 100 0.0 10 15 20 RG - Ohms Eoff Eon ---- 4.0 55 3.5 50 RG = 20Ω , VGE = 15V VCE = 400V 3.0 0.6 1.5 0.4 1.0 50 75 100 125 td(off) - - - - VCE = 400V 210 I C = 20A 40 180 35 150 30 120 90 20 0.0 150 20 30 40 50 Fig. 17. Inductive Turn-off Switching Times vs. Collector Current VCE = 400V 130 44 120 40 90 30 80 TJ = 25ºC 70 20 60 10 15 20 25 60 100 30 I C - Amperes © 2015 IXYS CORPORATION, All Rights Reserved 35 40 td(off) - - - 104 RG = 20Ω , VGE = 15V I C = 20A 36 32 96 88 I C = 40A 28 80 24 72 20 25 50 75 100 TJ - Degrees Centigrade 125 64 150 t d(off) - Nanoseconds 100 TJ = 150ºC 25 90 VCE = 400V t d(off) - Nanoseconds 110 40 35 80 112 tfi t f i - Nanoseconds td(off) - - - - RG = 20Ω , VGE = 15V 45 70 Fig. 18. Inductive Turn-off Switching Times vs. Junction Temperature 55 tfi 60 RG - Ohms TJ - Degrees Centigrade 50 240 25 0.5 0.0 tfi TJ = 150ºC, VGE = 15V I C = 40A I C = 20A 0.2 25 40 t d(off) - Nanoseconds 2.0 - MilliJoules I C = 40A on 2.5 E 1.0 0.8 35 270 45 t f i - Nanoseconds 1.2 30 Fig. 16. Inductive Turn-off Switching Times vs. Gate Resistance 1.6 1.4 25 I C - Amperes Fig. 15. Inductive Switching Energy Loss vs. Junction Temperature t f i - Nanoseconds 2.0 Eon - MilliJoules 4 E on - MilliJoules I C = 40A 1.0 0.6 Eoff - MilliJoules ---- RG = 20Ω , VGE = 15V VCE = 400V VCE = 400V 1.2 Eoff - MilliJoules Eon - TJ = 150ºC , VGE = 15V 1.2 Eoff - MilliJoules Eoff 1.4 7 IXYA20N65C3D1 IXYP20N65C3D1 Fig. 20. Inductive Turn-on Switching Times vs. Collector Current Fig. 19. Inductive Turn-on Switching Times vs. Gate Resistance 280 100 140 tri 240 td(on) - - - - 120 60 80 40 I C = 20A 40 t r i - Nanoseconds 80 I C = 40A 20 0 20 30 40 50 tri 80 RG = 20Ω , VGE = 15V 60 70 80 90 0 100 70 24 TJ = 25ºC 60 tri 22 50 20 40 18 TJ = 150ºC 30 16 20 14 10 12 0 10 10 15 20 25 30 35 40 I C - Amperes Fig. 21. Inductive Turn-on Switching Times vs. Junction Temperature 100 26 VCE = 400V RG - Ohms 120 28 td(on) - - - - t d(on) - Nanoseconds 100 t d(on) - Nanoseconds t r i - Nanoseconds TJ = 150ºC, VGE = 15V 160 90 120 VCE = 400V 200 30 34 td(on) - - - 30 RG = 20Ω , VGE = 15V 80 26 I C = 40A 60 22 40 18 I C = 20A 20 0 25 50 75 100 t d(on) - Nanoseconds t r i - Nanoseconds VCE = 400V 14 10 150 125 TJ - Degrees Centigrade Fig. 23. Reverse Recovery Charge vs. -diF/dt Fig. 22. Diode Forward Characteristics 1.6 40 TJ = 150ºC 35 1.4 IF = 30A VR = 400V 30 1.2 QRR (µC) I F (A) 25 TJ = 150ºC 20 TJ = 25ºC 20A 1.0 15 0.8 10 10A 0.6 5 0 0.4 0 0.5 1 1.5 2 2.5 VF (V) IXYS Reserves the Right to Change Limits, Test Conditions, and Dimensions. 200 300 400 500 600 700 800 -diF/ dt (A/µs) 900 1000 1100 1200 IXYA20N65C3D1 IXYP20N65C3D1 Fig. 24 Reverse Recovery Current vs. -diF/dt Fig. 25. Reverse Recovery Time vs. -diF/dt 180 26 TJ = 150ºC 24 TJ = 150ºC VR = 400V 22 20A IF = 40A 160 10A VR = 400V 140 20 tRR (ns) I RR (A) IF = 40A 18 16 14 120 20A 100 12 80 10A 10 8 60 200 300 400 500 600 700 800 900 1000 1100 1200 1300 1400 200 diF/dt (A/µs) 1.0 VR = 400V 0.9 IF = 20A -diF /dt = 300A/µs 400 500 600 700 800 900 1000 1100 1200 -diF/dt (A/µs) Fig. 13. Maximum Transient Thermal Impedance 10 Fig. 26. Dynamic Parameters QRR, IRR vs. Junction Temperature 1.1 300 Fig. 27. Maximum Transient Thermal Impedance (Diode) AAAAA 4 1 D = 0.5 Z (th)JC - ºC / W 0.8 KF 0.7 0.6 KF IRR 0.5 0.4 D = 0.2 D = 0.1 D = 0.05 0.1 D = tp / T D = 0.02 D = 0.01 Single Pulse tp T 0.3 KF QRR 0.2 0.1 0 20 40 60 80 100 120 140 160 0.01 1.E-06 1.E-05 1.E-04 TJ (ºC) 1.E-03 1.E-02 1.E-01 1.E+00 Pulse Width - Second Fig. 28. Cauer Thermal Network IGBT i 1 2 3 Ri (°C/W) 0.170320 0.136990 0.090011 Ci (J/°C) 0.0017715 0.0166820 0.0391660 DIODE i 1 2 3 © 2015 IXYS CORPORATION, All Rights Reserved Ri (°C/W) 0.331730 0.768860 0.285550 Ci (J/°C) 0.0002858 0.0037423 0.0432130 IXYS REF: IXY_20N65C3(3D) 01-21-15-B Disclaimer Notice - Information furnished is believed to be accurate and reliable. However, users should independently evaluate the suitability of and test each product selected for their own applications. Littelfuse products are not designed for, and may not be used in, all applications. Read complete Disclaimer Notice at www.littelfuse.com/disclaimer-electronics.