IXYP30N120C3

IXYP30N120C3 IXYH30N120C3 1200V XPTTM GenX3TM IGBTs VCES = IC110 = VCE(sat)  tfi(typ) = High-Speed IGBT for 20-50 kHz Switching 1200V 30A 3.3V 88ns TO-220 (IXYP) Symbol Test Conditions Maximum Ratings VCES VCGR TJ = 25°C to 175°C TJ = 25°C to 175°C, RGE = 1M VGES VGEM 1200 1200 V V G Continuous Transient ±20 ±30 V V TO-247 AD (IXYH) IC25 IC110 ICM TC = 25°C TC = 110°C TC = 25°C, 1ms 75 30 145 A A A IA EAS TC = 25°C TC = 25°C 20 400 A mJ SSOA (RBSOA) VGE = 15V, TVJ = 150°C, RG = 10 Clamped Inductive Load ICM = 60 VCE  VCES A PC TC = 25°C 500 W -55 ... +175 175 -55 ... +175 °C °C °C 300 260 °C °C 1.13/10 Nm/lb.in 3 6 g g TJ TJM Tstg G Maximum Lead Temperature for Soldering 1.6 mm (0.062in.) from Case for 10s Md Mounting Torque Weight TO-220 TO-247 E G = Gate E = Emitter Tab Tab C = Collector Tab = Collector Features  TL TSOLD C CE      High Voltage Package Optimized for Low Switching Losses Square RBSOA Positive Thermal Coefficient of Vce(sat) Avalanche Rated International Standard Packages Advantages   Symbol Test Conditions (TJ = 25C, Unless Otherwise Specified) Characteristic Values Min. Typ. Max. BVCES IC = 250A, VGE = 0V 1200 VGE(th) IC = 250A, VCE = VGE 3.0 ICES VCE = VCES, VGE = 0V IGES VCE = 0V, VGE = 20V VCE(sat) IC = 30A, VGE = 15V, Note 1 TJ = 150C © 2013 IXYS CORPORATION, All Rights Reserved Applications V  5.0 V 25 750 A μA  100 nA  3.3 V V TJ = 150C     3.7 High Power Density Low Gate Drive Requirement  High Frequency Power Inverters UPS Motor Drives SMPS PFC Circuits Battery Chargers Welding Machines Lamp Ballasts DS100385D(9/13) IXYP30N120C3 IXYH30N120C3 Symbol Test Conditions (TJ = 25°C Unless Otherwise Specified) Characteristic Values Min. Typ. Max. gfs 10 IC = 30A, VCE = 10V, Note 1 Cies Coes Cres VCE = 25V, VGE = 0V, f = 1MHz Qg(on) Qge Qgc IC = 30A, VGE = 15V, VCE = 0.5 • VCES td(on) tri Eon td(off) tfi Eoff td(on) tri Eon td(off) tfi Eoff RthJC RthCS RthCS Inductive load, TJ = 25°C IC = 30A, VGE = 15V VCE = 0.5 • VCES, RG = 10 Note 2 Inductive load, TJ = 150°C IC = 30A, VGE = 15V VCE = 0.5 • VCES, RG = 10 Note 2 TO-220 TO-247 TO-220 Outline 17 S 1640 110 38 pF pF pF 69 9 34 nC nC nC 19 40 2.6 130 88 1.1 ns ns mJ ns ns mJ 19 52 6.0 156 140 1.6 ns ns mJ ns ns mJ 0.50 0.21 0.30 °C/W °C/W °C/W Pins: 1 - Gate 3 - Emitter TO-247 Outline 1 Notes: 2 - Collector 2 P 3 1. Pulse test, t  300μs, duty cycle, d  2%. 2. Switching times & energy losses may increase for higher VCE(clamp), TJ or RG. e Terminals: 1 - Gate 3 - Emitter Dim. Millimeter Min. Max. A 4.7 5.3 A1 2.2 2.54 A2 2.2 2.6 b 1.0 1.4 1.65 2.13 b1 b2 2.87 3.12 C .4 .8 D 20.80 21.46 E 15.75 16.26 e 5.20 5.72 L 19.81 20.32 L1 4.50 P 3.55 3.65 Q 5.89 6.40 R 4.32 5.49 S 6.15 BSC 2 - Collector Inches Min. Max. .185 .209 .087 .102 .059 .098 .040 .055 .065 .084 .113 .123 .016 .031 .819 .845 .610 .640 0.205 0.225 .780 .800 .177 .140 .144 0.232 0.252 .170 .216 242 BSC IXYS Reserves the Right to Change Limits, Test Conditions, and Dimensions. IXYS MOSFETs and IGBTs are covered 4,835,592 by one or more of the following U.S. patents: 4,860,072 4,881,106 4,931,844 5,017,508 5,034,796 5,049,961 5,063,307 5,187,117 5,237,481 5,381,025 5,486,715 6,162,665 6,259,123 B1 6,306,728 B1 6,404,065 B1 6,534,343 6,583,505 6,683,344 6,727,585 7,005,734 B2 6,710,405 B2 6,759,692 7,063,975 B2 6,710,463 6,771,478 B2 7,071,537 7,157,338B2 IXYP30N120C3 IXYH30N120C3 Fig. 2. Extended Output Characteristics @ TJ = 25ºC Fig. 1. Output Characteristics @ TJ = 25ºC 160 60 VGE = 15V 13V 12V 11V 10V 50 VGE = 15V 140 14V 120 13V I C - Amperes I C - Amperes 40 9V 30 8V 20 100 12V 80 11V 60 10V 9V 40 7V 10 8V 20 6V 0 0 0.5 1 1.5 2 2.5 3 3.5 4 4.5 5 0 5 20 25 Fig. 3. Output Characteristics @ TJ = 150ºC Fig. 4. Dependence of VCE(sat) on Junction Temperature 2.4 2.0 I C = 60A 40 9V 30 8V 20 2 3 4 5 6 1.6 1.4 I C = 30A 1.2 1.0 I C = 15A 0.6 6V 5V 0 1.8 0.8 7V 10 1 0.4 -50 7 -25 0 25 VCE - Volts 50 75 125 150 175 Fig. 6. Input Admittance 80 TJ = 25ºC 70 7 TJ = - 40ºC 25ºC 150ºC 60 I C - Amperes 6 I C = 60A 5 100 TJ - Degrees Centigrade Fig. 5. Collector-to-Emitter Voltage vs. Gate-to-Emitter Voltage 8 30 VGE = 15V 2.2 VCE(sat) - Normalized 50 V CE - Volts 15 VCE - Volts VGE = 15V 13V 12V 11V 10V 0 10 VCE - Volts 60 I C - Amperes 7V 6V 0 4 50 40 30 30A 3 20 2 10 15A 1 0 7 8 9 10 11 12 VGE - Volts © 2013 IXYS CORPORATION, All Rights Reserved 13 14 15 4 5 6 7 8 VGE - Volts 9 10 11 IXYP30N120C3 IXYH30N120C3 Fig. 7. Transconductance Fig. 8. Gate Charge 25 16 TJ = - 40ºC VCE = 600V 14 I C = 30A 20 150ºC VGE - Volts g f s - Siemens 25ºC 15 I G = 10mA 12 10 10 8 6 4 5 2 0 0 0 10 20 30 40 50 60 70 80 90 100 0 10 20 I C - Amperes Fig. 9. Capacitance 40 50 60 70 Fig. 10. Reverse-Bias Safe Operating Area 10,000 70 f = 1 MHz 60 50 1,000 Cies I C - Amperes Capacitance - PicoFarads 30 QG - NanoCoulombs Coes 100 40 30 20 TJ = 150ºC RG = 10Ω dv / dt < 10V / ns 10 Cres 10 0 0 5 10 15 20 25 30 35 40 200 300 400 500 600 700 800 900 1000 1100 1200 1300 VCE - Volts VCE - Volts Fig. 11. Maximum Transient Thermal Impedance 1 Z (th)JC - ºC / W 0.1 0.01 0.001 0.00001 0.0001 0.001 0.01 Pulse Width - Second IXYS Reserves the Right to Change Limits, Test Conditions, and Dimensions. 0.1 1 IXYP30N120C3 IXYH30N120C3 Fig. 12. Inductive Switching Energy Loss vs. Gate Resistance Eoff 4.5 --- Eoff 24 TJ = 150ºC , VGE = 15V 4.0 21 VCE = 600V 18 3.0 15 2.5 12 2.0 9 1.5 16 VCE = 600V 6 2.0 12 TJ = 150ºC 1.5 8 TJ = 25ºC 1.0 I C = 30A 1.0 ---- 4 3 0.5 0.5 0 10 15 20 25 30 35 40 45 50 0 15 55 20 25 30 35 Fig. 14. Inductive Switching Energy Loss vs. Junction Temperature 5.0 4.5 Eoff 4.0 RG = 10Ω , VGE = 15V Eon 45 50 55 60 Fig. 15. Inductive Turn-off Switching Times vs. Gate Resistance 220 20 tfi 200 ---- 180 16 550 td(off) - - - - 500 TJ = 150ºC, VGE = 15V 450 VCE = 600V VCE = 600V 2.5 2.0 8 1.5 1.0 t f i - Nanoseconds 12 I C = 60A Eon - MilliJoules 3.0 4 I C = 30A 0.5 0.0 25 50 75 100 140 350 I C = 30A 120 300 100 250 80 60 150 40 100 50 15 20 25 30 Fig. 16. Inductive Turn-off Switching Times vs. Collector Current tfi 200 td(off) - - - - 240 100 140 80 120 40 80 20 60 35 40 45 I C - Amperes © 2013 IXYS CORPORATION, All Rights Reserved 50 55 60 td(off) - - - - 180 170 160 120 150 I C = 30A 100 140 80 130 60 120 I C = 60A 100 TJ = 25ºC 30 t f i - Nanoseconds 160 TJ = 150ºC 25 55 40 110 20 25 50 75 100 TJ - Degrees Centigrade 125 100 150 t d(off) - Nanoseconds 180 t d(off) - Nanoseconds 140 20 50 VCE = 600V 140 200 15 45 RG = 10Ω , VGE = 15V VCE = 600V 60 tfi 160 220 160 120 40 Fig. 17. Inductive Turn-off Switching Times vs. Junction Temperature 180 260 RG = 10Ω , VGE = 15V 180 35 RG - Ohms TJ - Degrees Centigrade 220 200 I C = 60A 20 0 150 125 400 t d(off) - Nanoseconds 160 3.5 Eoff - MilliJoules 40 I C - Amperes RG - Ohms t f i - Nanoseconds Eon - MilliJoules I C = 60A 3.5 Eon 20 RG = 10Ω , VGE = 15V 2.5 Eon - MilliJoules Eoff - MilliJoules Eon - 3.0 27 E off - MilliJoules 5.0 Fig. 13. Inductive Switching Energy Loss vs. Collector Current IXYP30N120C3 IXYH30N120C3 Fig. 18. Inductive Turn-on Switching Times vs. Gate Resistance 320 280 tri 240 VCE = 600V 200 80 td(on) - - - - 40 120 30 I C = 30A 80 20 40 10 0 t r i - Nanoseconds 160 25 30 35 40 45 50 TJ = 25ºC 140 200 120 20 80 18 60 16 40 14 20 12 10 15 20 25 30 35 40 45 Triangular Wave 26 I C = 60A 120 22 80 20 I C - Amperes t r i - Nanoseconds 24 18 I C = 30A TJ = 150ºC VCE = 600V 70 VGE = 15V 60 RG = 10Ω D = 0.5 Square Wave 50 40 30 20 10 0 100 60 TC = 75ºC 80 t d(on) - Nanoseconds 160 75 55 100 VCE = 600V 50 50 Fig. 21. Maximum Peak Load Current vs. Frequency 28 90 RG = 10Ω , VGE = 15V 25 22 100 55 td(on) - - - - 40 24 TJ = 150ºC I C - Amperes Fig. 20. Inductive Turn-on Switching Times vs. Junction Temperature tri 26 VCE = 600V RG - Ohms 240 28 0 0 20 td(on) - - - - t d(on) - Nanoseconds I C = 60A t d(on) - Nanoseconds t r i - Nanoseconds 160 50 30 RG = 10Ω , VGE = 15V 60 200 15 tri 180 70 TJ = 150ºC, VGE = 15V 10 Fig. 19. Inductive Turn-on Switching Times vs. Collector Current 125 16 150 TJ - Degrees Centigrade 0 1.0 10.0 100.0 1,000.0 fmax - KiloHertzs IXYS Reserves the Right to Change Limits, Test Conditions, and Dimensions. IXYS REF: IXY_30N120C3(4N-C91) 9-04-13 Disclaimer Notice - Information furnished is believed to be accurate and reliable. However, users should independently evaluate the suitability of and test each product selected for their own applications. Littelfuse products are not designed for, and may not be used in, all applications. Read complete Disclaimer Notice at www.littelfuse.com/disclaimer-electronics.