IXYR100N120C3

IXYR100N120C3 1200V XPTTM IGBT GenX3TM VCES = = IC110 VCE(sat)  tfi(typ) = (Electrically Isolated Tab) 1200V 56A 3.50V 110ns High-Speed IGBT for 20-50 kHz Switching ISOPLUS247TM Symbol Test Conditions Maximum Ratings VCES VCGR TJ = 25°C to 175°C TJ = 25°C to 175°C, RGE = 1M VGES VGEM 1200 1200 V V Continuous Transient ±20 ±30 V V IC25 IC110 ICM TC = 25°C (Chip Capability) TC = 110°C TC = 25°C, 1ms 110 56 450 A A A IA EAS TC = 25°C TC = 25°C 50 1.2 A J SSOA (RBSOA) VGE = 15V, TVJ = 150°C, RG = 1 Clamped Inductive Load ICM = 200 @VCE  VCES A PC TC = 25°C 484 W -55 ... +175 175 -55 ... +175 °C °C °C 300 260 °C °C 2500 V~ 20..120/4.5..27 N/lb. 5 g TJ TJM Tstg TL TSOLD Maximum Lead Temperature for Soldering 1.6 mm (0.062in.) from Case for 10s VISOL 50/60 Hz, 1 Minute FC Mounting Force G Isolated Tab E G = Gate E = Emitter C = Collector Features        Weight C  Optimized for Low Switching Losses Square RBSOA Silicon Chip on Direct-Copper Bond (DCB) Substrate Isolated Mounting Surface 2500V~ Electrical Isolation Positive Thermal Coefficient of Vce(sat) Avalanche Rated High Current Handling Capability Advantages   Symbol Test Conditions (TJ = 25C, Unless Otherwise Specified) Characteristic Values Min. Typ. Max. BVCES IC = 250A, VGE = 0V 1200 VGE(th) IC = 250A, VCE = VGE 3.0 ICES VCE = VCES, VGE = 0V VCE = 0V, VGE = 20V VCE(sat) IC = 100A, VGE = 15V, Note 1 TJ = 150C © 2018 IXYS CORPORATION, All Rights Reserved V 10 A 1.25 mA TJ = 150C IGES Applications V 5.0 100 2.96 3.78 3.50 High Power Density Low Gate Drive Requirement nA V V         High Frequency Power Inverters UPS Motor Drives SMPS PFC Circuits Battery Chargers Welding Machines Lamp Ballasts DS100406C(4/18) IXYR100N120C3 Symbol Test Conditions (TJ = 25°C Unless Otherwise Specified) Characteristic Values Min. Typ. Max. gfs 30 IC = 60A, VCE = 10V, Note 1 Cies Coes Cres VCE = 25V, VGE = 0V, f = 1MHz Qg(on) Qge Qgc IC = IC110, VGE = 15V, VCE = 0.5 • VCES td(on) tri Eon td(off) tfi Eoff td(on) tri Eon td(off) tfi Eoff Inductive load, TJ = 25°C IC = IC110, VGE = 15V VCE = 0.5 • VCES, RG = 1 Note 2 Inductive load, TJ = 125°C IC = IC110, VGE = 15V VCE = 0.5 • VCES, RG = 1 Note 2 RthJC RthCS Notes: 50 S 4950 356 120 pF pF pF 260 nC 47 nC 102 nC 27 110 12.00 120 110 4.90 ns ns mJ ns ns mJ 27 116 15.00 146 125 6.15 ns ns mJ ns ns mJ 0.15 0.31 °C/W °C/W 1. Pulse test, t  300μs, duty cycle, d  2%. 2. Switching times & energy losses may increase for higher VCE(clamp), TJ or RG. IXYS Reserves the Right to Change Limits, Test Conditions, and Dimensions. IXYS MOSFETs and IGBTs are covered 4,835,592 by one or more of the following U.S. patents: 4,860,072 4,881,106 4,931,844 5,017,508 5,034,796 5,049,961 5,063,307 5,187,117 5,237,481 5,381,025 5,486,715 6,162,665 6,259,123 B1 6,306,728 B1 6,404,065 B1 6,534,343 6,583,505 6,683,344 6,727,585 7,005,734 B2 6,710,405 B2 6,759,692 7,063,975 B2 6,710,463 6,771,478 B2 7,071,537 7,157,338B2 IXYR100N120C3 o o Fig. 1. Output Characteristics @ TJ = 25 C Fig. 2. Extended Output Characteristics @ TJ = 25 C 200 450 VGE = 15V 13V 12V 11V 180 160 350 9V 120 100 8V 80 60 7V 40 20 1.5 2 2.5 3 3.5 4 4.5 5 5.5 12V 11V 200 10V 150 9V 100 6V 1 13V 250 0 0.5 14V 300 I C - Amperes I C - Amperes 140 0 VGE = 15V 400 10V 8V 50 7V 0 6V 6 0 5 10 15 VCE - Volts 200 2.2 VGE = 15V 13V 12V 11V 160 I C = 200A VCE(sat) - Normalized 9V 8V 100 80 7V 60 1.6 1.4 I C = 100A 1.2 1.0 I C = 50A 40 6V 20 0.8 5V 0 1 2 3 4 5 6 7 0.6 -50 8 -25 0 25 VCE - Volts 50 75 100 125 150 175 TJ - Degrees Centigrade Fig. 5. Collector-to-Emitter Voltage vs. Gate-to-Emitter Voltage 8 35 1.8 120 0 30 VGE = 15V 2.0 10V 140 I C - Amperes 25 Fig. 4. Dependence of VCE(sat) on Junction Temperature o Fig. 3. Output Characteristics @ TJ = 150 C 180 20 VCE - Volts Fig. 6. Input Admittance 240 o TJ = 25 C 7 200 160 I C = 200A I C - Amperes VCE - Volts 6 5 4 120 80 o TJ = 150 C 100A o 25 C 40 3 o TJ = - 40 C 50A 0 2 6 7 8 9 10 11 12 VGE - Volts © 2018 IXYS CORPORATION, All Rights Reserved 13 14 15 4 5 6 7 8 VGE - Volts 9 10 11 IXYR100N120C3 Fig. 7. Transconductance Fig. 8. Gate Charge 80 16 o TJ = - 40 C 70 60 I C = 100A I G = 10mA 12 o 25 C 50 V GE - Volts g f s - Siemens VCE = 600V 14 o 150 C 40 30 10 8 6 20 4 10 2 0 0 0 20 40 60 80 100 120 140 160 180 0 200 40 80 120 160 200 240 I C - Amperes QG - NanoCoulombs Fig. 9. Capacitance Fig. 10. Reverse-Bias Safe Operating Area 280 10,000 200 1,000 150 I C - Amperes Capacitance - PicoFarads Cies Coes 100 100 C res o 50 TJ = 150 C RG = 1Ω dv / dt < 10V / ns f = 1 MHz 0 10 0 5 10 15 20 25 30 35 200 40 400 600 800 1000 1200 VCE - Volts VCE - Volts Fig. 11. Maximum Transient Thermal Impedance Z (th)JC - K / W 1 0.1 0.01 0.001 0.00001 0.0001 0.001 0.01 Pulse Width - Seconds IXYS Reserves the Right to Change Limits, Test Conditions, and Dimensions. 0.1 1 10 IXYR100N120C3 Fig. 12. Inductive Switching Energy Loss vs. Gate Resistance 12 Eoff 8 26 Eon o 10 14 I C = 100A 4 10 2 6 Eon 16 14 VCE = 600V 5 12 4 10 o TJ = 125 C 3 8 2 I C = 50A 0 2 3 4 5 6 7 8 9 6 o TJ = 25 C 1 4 0 2 1 50 10 55 60 65 70 RG - Ohms Eoff 10 12 4 8 2 4 t f i - Nanoseconds 6 0 75 700 600 VCE = 600V 140 500 120 400 I C = 100A 100 300 I C = 50A 100 0 1 2 3 4 5 6 7 8 9 TJ - Degrees Centigrade RG - Ohms Fig. 16. Inductive Turn-off Switching Times vs. Collector Current Fig. 17. Inductive Turn-off Switching Times vs. Junction Temperature 220 160 200 140 td(off) 100 160 80 140 td(off) 220 200 RG = 1Ω , VGE = 15V 120 180 100 160 I C = 50A, 100A 80 140 o TJ = 25 C 60 40 50 55 60 65 70 75 80 85 I C - Amperes © 2018 IXYS CORPORATION, All Rights Reserved 90 95 120 60 100 100 40 120 25 50 75 TJ - Degrees Centigrade 100 100 125 t d(off) - Nanoseconds 180 o TJ = 125 C t d(off) - Nanoseconds 120 tfi 10 VCE = 600V t f i - Nanoseconds RG = 1Ω , VGE = 15V VCE = 600V t f i - Nanoseconds 200 40 0 125 100 800 60 I C = 50A tfi 2 100 td(off) 80 140 95 t d(off) - Nanoseconds 16 I C = 100A 160 90 o 160 50 85 TJ = 125 C, VGE = 15V E on - MilliJoules E off - MilliJoules tfi 180 20 VCE = 600V 25 80 Fig. 15. Inductive Turn-off Switching Times vs. Gate Resistance 200 24 Eon RG = 1Ω , VGE = 15V 8 75 I C - Amperes Fig. 14. Inductive Switching Energy Loss vs. Junction Temperature 12 E on - MilliJoules 6 E on - MilliJoules 18 E off - MilliJoules 6 8 18 RG = 1Ω , VGE = 15V VCE = 600V E off - MilliJoules Eoff 7 22 TJ = 125 C , VGE = 15V Fig. 13. Inductive Switching Energy Loss vs. Collector Current IXYR100N120C3 Fig. 18. Inductive Turn-on Switching Times vs. Gate Resistance 240 tri 200 120 140 100 120 td(on) o TJ = 125 C, VGE = 15V Fig. 19. Inductive Turn-on Switching Times vs. Collector Current tri 60 80 40 I C = 50A 40 0 3 4 5 6 7 8 9 t r i - Nanoseconds I C = 100A 120 tri 0 20 50 55 60 65 70 75 80 85 90 95 20 100 34 30 I C = 100A 120 28 100 26 80 24 60 I C = 50A 22 40 20 20 18 0 50 22 32 VCE = 600V 25 24 o TJ = 125 C 75 100 t d(on) - Nanoseconds t r i - Nanoseconds td(on) RG = 1Ω , VGE = 15V 140 60 40 10 26 o TJ = 25 C I C - Amperes Fig. 20. Inductive Turn-on Switching Times vs. Junction Temperature 160 28 80 20 RG - Ohms 180 100 t d(on) - Nanoseconds 80 t d(on) - Nanoseconds t r i - Nanoseconds VCE = 600V 2 30 RG = 1Ω , VGE = 15V VCE = 600V 160 1 td(on) 32 16 125 TJ - Degrees Centigrade IXYS Reserves the Right to Change Limits, Test Conditions, and Dimensions. IXYS REF: IXY_100N120C3(9T-RY92)4-06-18 IXYR100N120C3 ISOPLUS247 (IXYR) Outline 1 - Gate 2,4 - Collector 3 - Emiiter © 2018 IXYS CORPORATION, All Rights Reserved