IXYR50N120C3D1

IXYR50N120C3D1 1200V XPTTM IGBT GenX3TM w/ Diode VCES = = IC90 VCE(sat)  tfi(typ) = (Electrically Isolated Tab) 1200V 32A 3.5V 43ns High-Speed IGBT for 20-50 kHz Switching Symbol Test Conditions VCES VCGR TJ = 25°C to 150°C TJ = 25°C to 150°C, RGE = 1M VGES VGEM ISOPLUS247TM Maximum Ratings 1200 1200 V V Continuous Transient ±20 ±30 V V IC25 IC90 IF110 ICM TC TC TC TC 56 32 18 210 A A A A SSOA (RBSOA) VGE = 15V, TVJ = 150°C, RG = 5 Clamped Inductive Load ICM = 100 @VCE  VCES A PC TC = 25°C 290 W -55 ... +150 150 -55 ... +150 °C °C °C 300 260 °C °C 2500 V~ 20..120/4.5..27 N/lb. 5 g = 25°C (Chip Capability) = 90°C = 110°C = 25°C, 1ms TJ TJM Tstg G Maximum Lead Temperature for Soldering 1.6 mm (0.062in.) from Case for 10s VISOL 50/60 Hz, 1 Minute FC Mounting Force Weight Isolated Tab E G = Gate E = Emitter C = Collector Features   TL TSOLD C        Silicon Chip on Direct-Copper Bond (DCB) Substrate Isolated Mounting Surface 2500V~ Electrical Isolation Optimized for Low Switching Losses Square RBSOA Positive Thermal Coefficient of Vce(sat) Anti-Parallel Ultra Fast Diode High Current Handling Capability International Standard Package Advantages Symbol Test Conditions (TJ = 25C, Unless Otherwise Specified) Characteristic Values Min. Typ. Max. BVCES IC = 250A, VGE = 0V 1200 VGE(th) IC = 250A, VCE = VGE 3.0 ICES VCE = VCES, VGE = 0V VCE = 0V, VGE = 20V VCE(sat) IC = 50A, VGE = 15V, Note 1 TJ = 150C  5.0 V 50 500 A μA 100 nA 3.5 V V 4.2 Applications         © 2016 IXYS CORPORATION, All Rights Reserved High Power Density Low Gate Drive Requirement V TJ = 125C IGES  High Frequency Power Inverters UPS Motor Drives SMPS PFC Circuits Battery Chargers Welding Machines Lamp Ballasts DS100492B(3/16) IXYR50N120C3D1 Symbol Test Conditions (TJ = 25°C Unless Otherwise Specified) Characteristic Values Min. Typ. Max. gfs 20 IC = 50A, VCE = 10V, Note 1 Cies Coes Cres VCE = 25V, VGE = 0V, f = 1MHz Qg(on) Qge Qgc IC = 50A, VGE = 15V, VCE = 0.5 • VCES td(on) tri Eon td(off) tfi Eoff td(on) tri Eon td(off) tfi Eoff Inductive load, TJ = 25°C IC = 50A, VGE = 15V VCE = 0.5 • VCES, RG = 5 Note 2 Inductive load, TJ = 150°C IC = 50A, VGE = 15V VCE = 0.5 • VCES, RG = 5 Note 2 RthJC RthCS ISOPLUS247 (IXYR) Outline 32 S 3100 230 66 pF pF pF 142 23 60 nC nC nC 28 62 3.0 133 43 1.0 ns ns mJ ns ns mJ 1.7 28 68 6.0 160 60 1.4 ns ns mJ ns ns mJ 0.15 0.43 °C/W °C/W 1 - Gate 2,4 - Collector 3 - Emiiter Reverse Diode (FRED) (TJ = 25°C, Unless Otherwise Specified) Symbol Test Conditions VF IF = 30A,VGE = 0V, Note 1 Characteristic Value Min. Typ. Max. TJ = 150°C IRM IF = 30A,VGE = 0V, -diF/dt = 100A/μs, TJ = 100°C trr VR = 600V TJ = 100°C 195 RthJC Notes: 3.00 V V 9 A 1.75 ns 1.10 °C/W 1. Pulse test, t  300μs, duty cycle, d  2%. 2. Switching times & energy losses may increase for higher VCE(clamp), TJ or RG. IXYS Reserves the Right to Change Limits, Test Conditions, and Dimensions. IXYS MOSFETs and IGBTs are covered 4,835,592 by one or more of the following U.S. patents: 4,860,072 4,881,106 4,931,844 5,017,508 5,034,796 5,049,961 5,063,307 5,187,117 5,237,481 5,381,025 5,486,715 6,162,665 6,259,123 B1 6,306,728 B1 6,404,065 B1 6,534,343 6,583,505 6,683,344 6,727,585 7,005,734 B2 6,710,405 B2 6,759,692 7,063,975 B2 6,710,463 6,771,478 B2 7,071,537 7,157,338B2 IXYR50N120C3D1 Fig. 2. Extended Output Characteristics @ TJ = 25ºC Fig. 1. Output Characteristics @ TJ = 25ºC 250 100 VGE = 15V VGE = 15V 13V 11V 10V 90 80 14V 13V 200 12V 9V 60 I C - Amperes I C - Amperes 70 50 8V 40 150 11V 10V 100 9V 30 7V 20 50 10 8V 6V 0 7V 6V 0 0 0.5 1 1.5 2 2.5 3 3.5 4 4.5 5 5.5 0 5 10 VCE - Volts 2.2 100 VGE = 15V 13V 12V 11V 10V I C - Amperes 70 I C = 100A 1.8 9V 60 50 8V 40 7V 30 1.6 1.4 I C = 50A 1.2 1.0 0.8 20 6V 10 1 2 3 4 5 6 7 I C = 25A 0.6 5V 0 0 25 VGE = 15V 2.0 V CE(sat) - Normalized 80 20 Fig. 4. Dependence of VCE(sat) on Junction Temperature Fig. 3. Output Characteristics @ TJ = 150ºC 90 15 VCE - Volts 0.4 -50 8 -25 0 VCE - Volts 25 50 75 100 125 150 175 TJ - Degrees Centigrade Fig. 5. Collector-to-Emitter Voltage vs. Gate-to-Emitter Voltage Fig. 6. Input Admittance 100 8.5 TJ = 25ºC 90 7.5 80 6.5 70 IC - Amperes VCE - Volts I C = 100A 5.5 4.5 50A 3.5 60 50 40 30 TJ = 150ºC 25ºC 20 - 40ºC 2.5 10 25A 1.5 0 6 7 8 9 10 11 12 VGE - Volts © 2016 IXYS CORPORATION, All Rights Reserved 13 14 15 3.0 3.5 4.0 4.5 5.0 5.5 6.0 6.5 VGE - Volts 7.0 7.5 8.0 8.5 9.0 9.5 IXYR50N120C3D1 Fig. 7. Transconductance Fig. 8. Gate Charge 44 16 TJ = - 40ºC 40 VCE = 600V 14 I C = 50A 36 12 25ºC 28 24 V GE - Volts g f s - Siemens 32 I G = 10mA 150ºC 20 16 12 10 8 6 4 8 2 4 0 0 0 10 20 30 40 50 60 70 80 90 100 0 20 40 60 80 100 120 I C - Amperes QG - NanoCoulombs Fig. 9. Capacitance Fig. 10. Reverse-Bias Safe Operating Area 140 10,000 Cies 80 1,000 I C - Amperes Capacitance - PicoFarads 100 Coes 100 Cres 60 40 TJ = 150ºC 20 RG = 5Ω dv / dt < 10V / ns f = 1 MHz 10 0 0 5 10 15 20 25 30 35 200 40 400 600 800 1000 1200 VCE - Volts VCE - Volts Fig. 11. Maximum Transient Thermal Impedance Z(th)JC - K / W 1 0.1 0.01 0.001 0.00001 0.0001 0.001 0.01 Pulse Width - Seconds IXYS Reserves the Right to Change Limits, Test Conditions, and Dimensions. 0.1 1 10 IXYR50N120C3D1 Fig. 12. Inductive Switching Energy Loss vs. Gate Resistance Fig. 13. Inductive Switching Energy Loss vs. Collector Current 6 3.5 30 Eoff Eon TJ = 150ºC , VGE = 15V 5 21 Eoff 3.0 25 VCE = 600V 15 2 10 E off - MilliJoules 3 15 2.0 12 TJ = 150ºC 1.5 9 TJ = 25ºC 1.0 6 5 0.5 3 0 0.0 E on - MilliJoules 20 E on - MilliJoules Eoff - MilliJoules 2.5 I C = 100A 18 RG = 5ΩVGE = 15V VCE = 600V 4 Eon I C = 50A 1 0 5 10 15 20 25 20 30 30 40 50 5 8 4 I C = 50A 0 75 t f i - Nanoseconds E off - MilliJoules 2 100 100 400 I C = 100A 80 I C = 50A 60 20 0 5 10 15 160 160 td(off) 220 VCE = 600V 140 60 140 TJ = 25ºC 120 20 100 0 30 40 50 60 70 80 I C - Amperes © 2016 IXYS CORPORATION, All Rights Reserved 90 80 100 t f i - Nanoseconds t f i - Nanoseconds 160 170 RG = 5Ω, VGE = 15V 120 160 100 150 I C = 100A 80 140 I C = 50A 60 130 40 120 20 25 50 75 100 TJ - Degrees Centigrade 125 110 150 t d(off) - Nanoseconds TJ = 125ºC 80 t d(off) - Nanoseconds 180 td(off) VCE = 600V 200 100 20 30 180 tfi RG = 5Ω, VGE = 15V 40 25 Fig. 17. Inductive Turn-off Switching Times vs. Junction Temperature 240 120 20 RG - Ohms Fig. 16. Inductive Turn-off Switching Times vs. Collector Current tfi 200 100 TJ - Degrees Centigrade 140 300 40 0 150 125 500 t d(off) - Nanoseconds 12 td(off) TJ = 150ºC, VGE = 15V VCE = 600V Eon - MilliJoules I C = 100A 50 120 16 VCE = 600V 25 0 100 600 tfi RG = 5ΩVGE = 15V 1 90 140 20 Eon 3 80 Fig. 15. Inductive Turn-off Switching Times vs. Gate Resistance Fig. 14. Inductive Switching Energy Loss vs. Junction Temperature 4 70 I C - Amperes RG - Ohms Eoff 60 IXYR50N120C3D1 Fig. 19. Inductive Turn-on Switching Times vs. Collector Current Fig. 18. Inductive Turn-on Switching Times vs. Gate Resistance 350 200 tri 55 150 45 I C = 50A 100 35 50 25 0 20 25 160 36 TJ = 150ºC, 25ºC 120 32 80 28 40 24 0 15 15 40 20 30 30 40 50 60 70 80 90 t d(on) - Nanoseconds 65 10 td(on) RG = 5Ω, VGE = 15V VCE = 600V 200 5 44 I C = 100A VCE = 600V 250 75 t d(on) - Nanoseconds t r i - Nanoseconds td(on) TJ = 150ºC, VGE = 15V 240 t r i - Nanoseconds tri 300 85 20 100 I C - Amperes RG - Ohms Fig. 20. Inductive Turn-on Switching Times vs. Junction Temperature 240 44 tri 200 td(on) 40 RG = 5Ω, VGE = 15V 160 36 I C = 100A 120 32 80 28 I C = 50A 40 24 0 25 50 t d(on) - Nanoseconds t r i - Nanoseconds VCE = 600V 75 100 125 20 150 TJ - Degrees Centigrade Fig. 21. Maximum Transient Thermal Impedance (Diode) 10 Z (th)JC - ºC / W 1 0.1 0.01 0.001 0.0001 0.00001 0.0001 0.001 0.01 0.1 1 Pulse Width - Second IXYS Reserves the Right to Change Limits, Test Conditions, and Dimensions. IXYS REF: IXY_50N120C3(6N)05-12-11 IXYR50N120C3D1 Fig. 22. Forward Current IF vs VF Fig. 23. Reverse Recovery Charge QRM vs. -diF/dt 5 70 TVJ = 100ºC 60 VR = 600V 4 50 IF = 60A TVJ = 150ºC 100ºC 40 IF [A] 3 25ºC QRM [µC] 30 30A 2 15A 20 1 10 0 0 0 0.5 1 1.5 2 2.5 3 3.5 4 100 1000 500 VF [V] -diF/dt [A/µs] Fig. 25. Dynamic Parameters QRM, IRM vs. TVJ Fig. 24. Peak Reverse Current IRM vs. -diF/dt 60 2 TVJ = 100ºC I RM & QRM [normalized] VR = 600V 50 40 IF = 60A, 30A, 15A I RM 30 [A] 20 1.5 1 IRM 0.5 QRM 10 0 0 0 200 400 600 800 20 1000 40 60 80 Fig. 26. Recovery Time trr vs. -diF/dt 220 120 140 Fig. 27. Peak Forward Voltage VFR, trr vs -diF/dt 120 160 1.2 TVJ = 100ºC TVJ = 100ºC IF = 30A 100 VR = 600V 200 100 TVJ [ºC] -diF/dt [A/µs] 1 trr 80 0.8 180 trr [ns] VFR [V] IF = 60A 30A 15A 160 140 120 0.6 trr 60 [µs] VFR 40 0.4 20 0.2 0 0 200 400 600 -diF/dt [A/µs] © 2016 IXYS CORPORATION, All Rights Reserved 800 1000 0 100 200 300 400 500 600 -diF/dt [A/µs] 700 800 900 0 1000 Disclaimer Notice - Information furnished is believed to be accurate and reliable. However, users should independently evaluate the suitability of and test each product selected for their own applications. Littelfuse products are not designed for, and may not be used in, all applications. Read complete Disclaimer Notice at www.littelfuse.com/disclaimer-electronics.