IXYT25N250CHV

Advance Technical Information High Voltage XPTTM IGBT IXYT25N250CHV IXYH25N250CHV VCES = IC110 = VCE(sat)  tfi(typ) = 2500V 25A 4.0V 246ns TO-268HV (IXYT) G E Symbol Test Conditions VCES VCGR TJ = 25°C to 175°C TJ = 25°C to 175°C, RGE = 1M VGES VGEM C (Tab) Maximum Ratings 2500 2500 V V Continuous Transient ±20 ±30 V V IC25 IC110 ICM TC = 25°C TC = 110°C TC = 25°C, 1ms 95 25 235 A A A SSOA (RBSOA) VGE = 15V, TVJ = 150°C, RG = 5 Clamped Inductive Load ICM = 100 1500 A V PC TC = 25°C 937 W G = Gate E = Source -55 ... +175 175 -55 ... +175 °C °C °C Features 300 260 °C °C  1.13/10 Nm/lb.in  4 6 g g TJ TJM Tstg TL TSOLD Maximum Lead Temperature for Soldering Plastic Body for 10s Md Mounting Torque Weight TO-268HV TO-247HV TO-247HV (IXYH) G E C   C (Tab) C = Drain Tab = Drain High Voltage Package High Blocking Voltage High Peak Current Capability Low Saturation Voltage Advantages  Symbol Test Conditions (TJ = 25C, Unless Otherwise Specified) BVCES IC = 250μA, VGE = 0V VGE(th) IC = 250μA, VCE = VGE ICES VCE = VCES, VGE = 0V Characteristic Values Min. Typ. Max. 2500 IGES VCE = 0V, VGE = ±20V VCE(sat) IC V 3.0 TJ = 100°C = 25A, VGE = 15V, Note 1 TJ = 150°C © 2016 IXYS CORPORATION, All Rights Reserved  5.0 V 25 μA μA 100 3.4 4.7 ±100 nA 4.0 V V Low Gate Drive Requirement High Power Density Applications      Switch-Mode and Resonant-Mode Power Supplies Uninterruptible Power Supplies (UPS) Laser Generators Capacitor Discharge Circuits AC Switches DS100762A(12/16) IXYT25N250CHV IXYH25N250CHV Symbol Test Conditions (TJ = 25°C Unless Otherwise Specified) Characteristic Values Min. Typ. Max. gfs IC = 25A, VCE = 10V, Note 1 16 RGi Gate Input Resistance Cies Coes Cres Qg(on) Qge Qgc td(on) tri Eon td(off) tfi Eoff td(on) tri Eon td(off) tfi Eoff VCE = 25V, VGE = 0V, f = 1MHz S 2.8  3060 114 43 pF pF pF 147 16 68 nC nC nC 15 34 8.3 230 246 7.3 ns ns mJ ns ns mJ 18 33 11.0 225 350 10.5 ns ns mJ ns ns mJ 0.15 0.16 °C/W °C/W Inductive load, TJ = 25°C IC = 25A, VGE = 15V VCE = 0.5 • VCES, RG = 5 Note 2 VCE = 0.5 • VCES, RG = 5 Note 2 RthJC RthCS E 27 IC = 25A, VGE = 15V, VCE = 0.5 • VCES Inductive load, TJ = 150°C IC = 25A, VGE = 15V TO-268HV Outline L2 3 E1 D 1 H 2 3 2 C e D1 D2 A1 L4 e A C2 D3 1 b PINS: 1 - Gate 2 - Emitter 3 - Collector L3 A2 L TO-247HV Outline E R 0P A A2 E1 0P1 Q S D1 D 4 D2 1 2 3 L1 D3 Note: 1. Pulse test, t  300s, duty cycle, d  2%. L e e1 A3 2X A1 E2 E3 4X b c 3X PINS: 1 - Gate 2 - Emitter 3, 4 - Collector 3X ADVANCE TECHNICAL INFORMATION The product presented herein is under development. The Technical Specifications offered are derived from a subjective evaluation of the design, based upon prior knowledge and experience, and constitute a "considered reflection" of the anticipated result. IXYS reserves the right to change limits, test conditions, and dimensions without notice. IXYS Reserves the Right to Change Limits, Test Conditions, and Dimensions. IXYS MOSFETs and IGBTs are covered 4,835,592 by one or moreof the following U.S. patents: 4,860,072 4,881,106 4,931,844 5,017,508 5,034,796 5,049,961 5,063,307 5,187,117 5,237,481 5,381,025 5,486,715 6,162,665 6,259,123 B1 6,306,728 B1 6,404,065 B1 6,534,343 6,583,505 6,683,344 6,727,585 7,005,734 B2 6,710,405 B2 6,759,692 7,063,975 B2 6,710,463 6,771,478 B2 7,071,537 7,157,338B2 b1 IXYT25N250CHV IXYH25N250CHV Fig. 2. Extended Output Characteristics @ TJ = 25ºC Fig. 1. Output Characteristics @ TJ = 25ºC 50 250 VGE = 25V 19V 15V 13V 11V 200 13V 9V I C - Amperes I C - Amperes 40 VGE = 25V 19V 15V 30 20 7V 10 150 11V 100 9V 50 7V 5V 0 5V 0 0 0.5 1 1.5 2 2.5 3 3.5 4 4.5 5 5.5 0 5 10 2.2 50 VGE = 25V 19V 15V 13V 11V 25 30 VGE = 15V 2.0 1.8 9V VCE(sat) - Normalized I C - Amperes 20 Fig. 4. Dependence of VCE(sat) on Junction Temperature Fig. 3. Output Characteristics @ TJ = 150ºC 40 15 VCE - Volts VCE - Volts 30 7V 20 I C = 50A 1.6 1.4 I C = 25A 1.2 1.0 0.8 10 I C = 12.5A 0.6 5V 0.4 0 0 1 2 3 4 5 6 7 -50 8 -25 0 25 VCE - Volts Fig. 5. Collector-to-Emitter Voltage vs. Gate-to-Emitter Voltage 7 50 75 100 125 150 175 TJ - Degrees Centigrade Fig. 6. Input Admittance 90 TJ = 25ºC 80 6 70 I C - Amperes VCE - Volts 60 5 I C = 50A 4 50 40 30 25A TJ = 150ºC 25ºC 20 3 - 40ºC 10 12.5A 0 2 5 7 9 11 13 15 17 VGE - Volts © 2016 IXYS CORPORATION, All Rights Reserved 19 21 23 25 4.0 4.5 5.0 5.5 6.0 6.5 7.0 VGE - Volts 7.5 8.0 8.5 9.0 9.5 IXYT25N250CHV IXYH25N250CHV Fig. 7. Transconductance Fig. 8. Gate Charge 44 16 TJ = - 40ºC 40 VCE = 1250V 14 I C = 25A 36 25ºC 28 VGE - Volts g f s - Siemens 32 150ºC 24 I G = 10mA 12 20 16 10 8 6 12 4 8 2 4 0 0 0 10 20 30 40 50 60 70 80 90 0 20 40 I C - Amperes 60 80 100 120 140 QG - NanoCoulombs Fig. 10. Reverse-Bias Safe Operating Area Fig. 9. Capacitance 120 10,000 Cies 80 1,000 I C - Amperes Capacitance - PicoFarads 100 Coes 100 60 40 TJ = 150ºC 20 RG = 5Ω dv / dt < 10V / ns Cres f = 1 MHz 0 10 0 5 10 15 20 25 30 35 100 40 400 700 1000 1600 1900 2200 2500 Fig. 12. Maximum Transient Thermal Impedance Fig. 11. Forward-Bias Safe Operating Area 1 1000 VCE(sat) Limit 100 25µs 10 Z(th)JC - K / W I D - Amperes 1300 VCE - Volts VCE - Volts 100µs 1ms 1 0.1 0.01 10ms 0.1 TJ = 175ºC DC TC = 25ºC Single Pulse 100ms 0.01 1 10 100 1000 10000 VDS - Volts IXYS Reserves the Right to Change Limits, Test Conditions, and Dimensions. 0.001 0.00001 0.0001 0.001 0.01 0.1 Pulse Width - Seconds 1 10 IXYT25N250CHV IXYH25N250CHV Fig. 13. Inductive Switching Energy Loss vs. Gate Resistance 26 Eoff 24 28 20 Eon Eoff TJ = 150ºC , VGE = 15V 22 32 Fig. 14. Inductive Switching Energy Loss vs. Collector Current 20 14 20 10 16 TJ = 150ºC 16 16 12 12 TJ = 25ºC 8 8 12 4 4 8 0 E on - MilliJoules 24 I C = 50A E off - MilliJoules VCE = 1250V E on - MilliJoules E off - MilliJoules Eon RG = 5ΩVGE = 15V VCE = 1250V 18 24 I C = 25A 6 2 5 10 15 20 25 30 35 40 45 50 0 10 55 15 20 25 Fig. 15. Inductive Switching Energy Loss vs. Junction Temperature Eon 400 20 16 10 12 I C = 25A 6 8 2 75 100 4 150 125 900 VCE = 1250V 350 750 300 600 I C = 25A 250 I C = 50A 200 300 150 150 0 5 10 15 20 tfi td(off) 500 t f i - Nanoseconds TJ = 150ºC 300 300 200 200 TJ = 25ºC 100 0 0 25 30 35 40 45 50 55 350 td(off) 300 40 I C - Amperes © 2016 IXYS CORPORATION, All Rights Reserved 45 50 300 250 I C = 25A 220 200 I C = 50A 140 150 60 25 50 75 100 TJ - Degrees Centigrade 125 100 150 t d(off) - Nanoseconds 400 20 35 RG = 5Ω, VGE = 15V 380 t d(off) - Nanoseconds 400 15 30 VCE = 1250V VCE = 1250V 10 25 Fig. 18. Inductive Turn-off Switching Times vs. Junction Temperature 460 600 RG = 5Ω, VGE = 15V 100 450 100 t f i - Nanoseconds tfi 1050 RG - Ohms Fig. 17. Inductive Turn-off Switching Times vs. Collector Current 500 1200 td(off) TJ - Degrees Centigrade 600 50 t d(off) - Nanoseconds I C = 50A 14 50 45 TJ = 150ºC, VGE = 15V E on - MilliJoules E off - MilliJoules VCE = 1250V 25 tfi 450 24 RG = 5ΩVGE = 15V 18 40 Fig. 16. Inductive Turn-off Switching Times vs. Gate Resistance 500 28 t f i - Nanoseconds Eoff 22 35 I C - Amperes RG - Ohms 26 30 IXYT25N250CHV IXYH25N250CHV Fig. 19. Inductive Turn-on Switching Times vs. Gate Resistance tri td(on) TJ = 150ºC, VGE = 15V 80 40 I C = 25A I C = 50A 60 30 40 20 20 10 td(on) 60 22 50 20 TJ = 150ºC 40 18 30 16 10 15 20 25 30 35 40 45 50 tri 10 10 15 20 25 30 35 40 45 50 I C - Amperes Fig. 21. Inductive Turn-on Switching Times vs. Junction Temperature 100 12 0 55 RG - Ohms 120 14 TJ = 25ºC 10 0 5 24 VCE = 1250V 20 0 26 t d(on) - Nanoseconds 50 28 RG = 5Ω, VGE = 15V 70 VCE = 1250V 100 tri 80 60 t d(on) - Nanoseconds t r i - Nanoseconds 120 90 70 t r i - Nanoseconds 140 Fig. 20. Inductive Turn-on Switching Times vs. Collector Current 24 td(on) 22 RG = 5Ω, VGE = 15V 80 20 I C = 50A 60 18 40 16 t d(on) - Nanoseconds t r i - Nanoseconds VCE = 1250V I C = 25A 20 14 0 25 50 75 100 125 12 150 TJ - Degrees Centigrade IXYS Reserves the Right to Change Limits, Test Conditions, and Dimensions. IXYS REF: IXY_25N250CV1HV(7T-AT628) 6-24-16 Disclaimer Notice - Information furnished is believed to be accurate and reliable. However, users should independently evaluate the suitability of and test each product selected for their own applications. Littelfuse products are not designed for, and may not be used in, all applications. Read complete Disclaimer Notice at www.littelfuse.com/disclaimer-electronics.