IXYX30N170CV1

Preliminary Technical Information IXYK30N170CV1 IXYX30N170CV1 High Voltage XPTTM IGBT w/ Diode VCES = IC110 = VCE(sat)  tfi(typ) = 1700V 30A 4.0V 95ns TO-264 (IXYK) Symbol Test Conditions Maximum Ratings VCES VCGR TJ = 25°C to 175°C TJ = 25°C to 175°C, RGE = 1M VGES VGEM 1700 1700 V V Continuous Transient ±20 ±30 V V IC25 IC110 IF110 ICM TC TC TC TC 100 30 38 250 A A A A SSOA (RBSOA) VGE = 15V, TVJ = 150°C, RG = 2.7 Clamped Inductive Load ICM = 120 1360 A V PC TC = 25°C 937 W -55 ... +175 175 -55 ... +175 °C °C °C 300 260 °C °C = 25°C = 110°C = 110°C = 25°C, 1ms TJ TJM Tstg TL TSOLD Maximum Lead Temperature for Soldering 1.6 mm (0.062in.) from Case for 10s Md Mounting Torque (TO-264) FC Mounting Force Weight TO-264 PLUS247 (PLUS247) Symbol Test Conditions (TJ = 25C, Unless Otherwise Specified) 1.13/10 Nm/lb.in 20..120 /4.5..27 N/lb 10 6 g g IC = 250A, VGE = 0V 1700 VGE(th) IC = 250A, VCE = VGE 3.0 ICES VCE = 0.8 • VCES, VGE = 0V IGES VCE = 0V, VGE = 20V VCE(sat) IC = 30A, VGE = 15V, Note 1 TJ = 150C 100 3.5 4.6 4.0 PLUS247 (IXYX) G E G = Gate S = Emitter Tab D = Collector Tab = Collector Features      International Standard Packages High Voltage Package High Blocking Voltage Low Saturation Voltage Low Gate Drive Requirement High Power Density Applications nA  V V     © 2017 IXYS CORPORATION, All Rights Reserved C V 25 A 4 mA TJ = 125C Tab E  V 5.0 C Advantages Characteristic Values Min. Typ. Max. BVCES G Switch-Mode and Resonant-Mode Power Supplies Uninterruptible Power Supplies (UPS) Laser Generators Capacitor Discharge Circuits AC Switches DS100724B(3/17) IXYK30N170CV1 IXYX30N170CV1 Symbol Test Conditions (TJ = 25°C Unless Otherwise Specified) Characteristic Values Min. Typ. Max. gfs IC = 30A, VCE = 10V, Note 1 17 RGi Gate Input Resistance Cies Coes Cres Qg(on) Qge Qgc td(on) tri Eon td(off) tfi Eoff td(on) tri Eon td(off) tfi Eoff VCE = 25V, VGE = 0V, f = 1MHz IC = 30A, VGE = 15V, VCE = 0.5 • VCES Inductive load, TJ = 25°C IC = 30A, VGE = 15V VCE = 0.5 • VCES, RG = 2.7 Note 2 Inductive load, TJ = 150°C IC = 30A, VGE = 15V VCE = 0.5 • VCES, RG = 2.7 Note 2 RthJC RthCS TO-264 Outline S 2.8  3100 210 55 pF pF pF 150 15 65 nC nC nC 16 33 3.6 143 95 1.8 ns ns mJ ns ns mJ 16 33 5.5 193 134 3.5 ns ns mJ ns ns mJ 0.15 0.16 °C/W °C/W Q S R D 1 2 3 L1 L c b1 x2 e Terminals: b2 b A1 0P 4 1 = Gate 2,4 = Colector 3 = Emitter PLUS 247TM Outline E A2 E1 Q D2 R Reverse Diode (FRED) D1 D (TJ = 25°C, Unless Otherwise Specified) Symbol Test Conditions Characteristic Value Min. Typ. Max. VF IF = 30A,VGE = 0V, Note 1 IRM IF = 30A,VGE = 0V, -diF/dt = 500A/μs, 1 3.7 V V 32 A 175 RthJC 2 4 3 L1 3.5 TJ = 150°C VR = 1200V, TJ = 150°C Notes: Q1 R1 A trr A E 28 ns 0.36°C/W L C A1 b 3 PLCS b4 b2 2 PLCS e 2 PLCS Terminals: 1 - Gate 2,4 - Collector 3 - Emitter 1. Pulse test, t  300μs, duty cycle, d  2%. 2. Switching times & energy losses may increase for higher VCE(clamp), TJ or RG. PRELIMINARY TECHNICAL INFORMATION The product presented herein is under development. The Technical Specifications offered are derived from a subjective evaluation of the design, based upon prior knowledge and experience, and constitute a "considered reflection" of the anticipated result. IXYS reserves the right to change limits, test conditions, and dimensions without notice. IXYS Reserves the Right to Change Limits, Test Conditions, and Dimensions. IXYS MOSFETs and IGBTs are covered 4,835,592 by one or more of the following U.S. patents: 4,860,072 4,881,106 4,931,844 5,017,508 5,034,796 5,049,961 5,063,307 5,187,117 5,237,481 5,381,025 5,486,715 6,162,665 6,259,123 B1 6,306,728 B1 6,404,065 B1 6,534,343 6,583,505 6,683,344 6,727,585 7,005,734 B2 6,710,405 B2 6,759,692 7,063,975 B2 6,710,463 6,771,478 B2 7,071,537 7,157,338B2 IXYK30N170CV1 IXYX30N170CV1 o o Fig. 2. Extended Output Characteristics @ TJ = 25 C Fig. 1. Output Characteristics @ TJ = 25 C 60 300 VGE = 15V 13V 11V 10V 9V 14V 250 13V 8V 40 200 I C - Amperes I C - Amperes 50 VGE = 15V 30 7V 20 10 12V 11V 150 10V 100 9V 8V 50 6V 0 7V 6V 0 0 1 2 3 4 5 6 0 5 10 15 60 2.0 VGE = 15V 13V 11V 10V 9V 30 VGE = 15V 1.8 I C = 60A 1.6 VCE(sat) - Normalized 8V 40 I C - Amperes 25 Fig. 4. Dependence of VCE(sat) on Junction Temperature o Fig. 3. Output Characteristics @ TJ = 150 C 50 20 VCE - Volts VCE - Volts 30 7V 20 1.4 I C = 30A 1.2 1.0 0.8 I C = 15A 6V 10 0.6 5V 0.4 0 0 1 2 3 4 5 6 7 -50 8 -25 0 VCE - Volts 50 75 100 125 150 175 TJ - Degrees Centigrade Fig. 5. Collector-to-Emitter Voltage vs. Gate-to-Emitter Voltage 8.0 25 Fig. 6. Input Admittance 80 TJ = 25ºC 70 7.0 60 I C - Amperes VCE - Volts 6.0 I C = 60A 5.0 30A 4.0 50 40 30 o TJ = 150 C o 20 25 C o - 40 C 3.0 10 15A 0 2.0 6 7 8 9 10 11 12 VGE - Volts © 2017 IXYS CORPORATION, All Rights Reserved 13 14 15 4 5 6 7 VGE - Volts 8 9 IXYK30N170CV1 IXYX30N170CV1 Fig. 7. Transconductance Fig. 8. Gate Charge 45 16 o TJ = - 40 C 40 35 25 VGE - Volts 25 C 30 I C = 30A I G = 10mA 12 o g f s - Siemens VCE = 850V 14 o 150 C 20 15 10 8 6 10 4 5 2 0 0 0 10 20 30 40 50 60 70 80 90 0 20 40 I C - Amperes 60 80 100 120 140 160 QG - NanoCoulombs Fig. 9. Capacitance Fig. 10. Reverse-Bias Safe Operating Area 10,000 140 C ies 100 1,000 I C - Amperes Capacitance - PicoFarads 120 C oes 80 60 100 40 o TJ = 150 C Cres f = 1 MHz RG = 2.7Ω dv / dt < 10V / ns 20 10 0 0 5 10 15 20 25 30 35 40 200 400 600 800 1000 1200 1400 1600 1800 VCE - Volts VCE - Volts Fig. 11. Maximum Transient Thermal Impedance (IGBT) Z (th)JC - K / W 1 0.1 0.01 0.001 0.00001 0.0001 0.001 0.01 Pulse Width - Seconds IXYS Reserves the Right to Change Limits, Test Conditions, and Dimensions. 0.1 1 10 IXYK30N170CV1 IXYX30N170CV1 Fig. 12. Inductive Switching Energy Loss vs. Gate Resistance 12 Eoff 10 30 Eon º 25 6 15 4 10 2 7 E off - MilliJoules E off - MilliJoules I C = 60A 12 15 18 21 24 5 4 8 o TJ = 25 C 2 4 0 0 9 27 0 15 30 20 25 30 Fig. 14. Inductive Switching Energy Loss vs. Junction Temperature 9 Eoff 8 RG = 2.7ΩVGE = 15V 180 20 18 Eon tfi 160 16 12 I C = 60A 5 10 4 8 3 6 2 t f i - Nanoseconds Eoff - MilliJoules 6 4 I C = 30A 50 75 100 0 150 125 td(off) 600 o 140 500 I C = 30A 120 400 I C = 60A 100 300 80 200 60 100 3 6 9 12 td(off) VCE = 850V 120 180 100 160 o TJ = 25 C 140 60 120 40 100 40 21 24 27 30 45 I C - Amperes © 2017 IXYS CORPORATION, All Rights Reserved 50 55 60 220 td(off) 200 RG = 2.7Ω, VGE = 15V I C = 60A 120 180 100 160 80 I C = 30A 60 140 120 40 25 50 75 100 TJ - Degrees Centigrade 125 100 150 t d(off) - Nanoseconds 200 35 18 VCE = 850V t d(off) - Nanoseconds o TJ = 150 C 30 140 220 140 25 tfi 240 RG = 2.7Ω, VGE = 15V 160 15 Fig. 17. Inductive Turn-off Switching Times vs. Junction Temperature 160 260 t f i - Nanoseconds tfi 180 t f i - Nanoseconds 700 RG - Ohms Fig. 16. Inductive Turn-off Switching Times vs. Collector Current 20 60 TJ = 150 C, VGE = 15V TJ - Degrees Centigrade 15 55 2 0 80 50 t d(off) - Nanoseconds 14 200 45 VCE = 850V E on - MilliJoules 7 25 40 Fig. 15. Inductive Turn-off Switching Times vs. Gate Resistance VCE = 850V 1 35 I C - Amperes RG - Ohms 10 12 1 0 6 o TJ = 150 C 6 3 5 I C = 30A 16 VCE = 850V E on - MilliJoules 20 E on - MilliJoules 8 20 Eon RG = 2.7ΩVGE = 15V 8 VCE = 850V 3 Eoff 9 TJ = 150 C , VGE = 15V 10 Fig. 13. Inductive Switching Energy Loss vs. Collector Current IXYK30N170CV1 IXYX30N170CV1 Fig. 18. Inductive Turn-on Switching Times vs. Gate Resistance 180 tri 160 120 55 td(on) tri 50 100 o TJ = 150 C, VGE = 15V 100 35 80 30 I C = 60A 60 25 I C = 30A 40 19 VCE = 850V t r i - Nanoseconds 40 td(on) o TJ = 150 C 80 18 60 17 o TJ = 25 C 40 16 20 15 t d(on) - Nanoseconds VCE = 850V 120 20 RG = 2.7Ω, VGE = 15V 45 t d(on) - Nanoseconds t r i - Nanoseconds 140 Fig. 19. Inductive Turn-on Switching Times vs. Collector Current 20 20 15 0 0 10 3 6 9 12 15 18 21 24 27 Fig. 20. Inductive Turn-on Switching Times vs. Junction Temperature tri 100 20 25 30 35 40 45 50 55 60 I C - Amperes RG - Ohms 120 14 15 30 20 td(on) RG = 2.7Ω, VGE = 15V 19 80 18 I C = 60A 60 17 40 16 I C = 30A 20 15 0 25 50 75 t d(on) - Nanoseconds t r i - Nanoseconds VCE = 850V 100 125 14 150 TJ - Degrees Centigrade IXYS Reserves the Right to Change Limits, Test Conditions, and Dimensions. IXYS REF: IXY_30N170CV1(7T-AT653) 3-29-17-A IXYK30N170CV1 IXYX30N170CV1 Fig. 21. Diode Forward Characteristics Fig. 22. Reverse Recovery Charge vs. -diF/dt 5.0 100 o TJ = 150 C 4.5 VR = 1200V 80 4.0 60 3.5 o QRR (μC) I F (A) TJ = 25 C o TJ = 150 C 40 I F = 60A 3.0 2.5 30A 2.0 20 15A 1.5 0 1.0 0 1 2 3 4 5 6 7 300 350 400 450 500 550 600 650 Fig. 23. Reverse Recovery Current vs. -diF/dt 750 800 Fig. 24. Reverse Recovery Time vs. -diF/dt 260 55 o TJ = 150 C 50 o TJ = 150 C 240 VR = 1200V VR = 1200V 45 220 I F = 60A, 30A, 15A 40 I F = 60A 200 tRR (ns) I RR (A) 700 -diF/ dt (A/μs) VF (V) 35 30A 180 30 160 25 140 20 120 15 15A 100 300 400 1.1 500 600 700 800 300 400 500 600 700 diF/dt (A/μs) -diF/dt (A/μs) Fig. 25. Dynamic Parameters QRR, IRR vs. Junction Temperature Fig. 26. Maximum Transient Thermal Impedance (Diode) 1 800 VR = 1200V 1.0 I F = 30A -diF/dt = 500A/μs Z (th)JC - K / W KF 0.9 0.8 0.7 0.1 KF QRR KF IRR 0.6 0.5 0 20 40 60 80 100 TJ (ºC) © 2017 IXYS CORPORATION, All Rights Reserved 120 140 160 0.01 0.00001 0.0001 0.001 0.01 0.1 Pulse Width - Seconds 1 10 Disclaimer Notice - Information furnished is believed to be accurate and reliable. However, users should independently evaluate the suitability of and test each product selected for their own applications. Littelfuse products are not designed for, and may not be used in, all applications. 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