IXZ210N50L2
RF Power MOSFET
N-channel enhancement mode linear RF power MOSFET
VDSS = 500 V
ID25 = 10 A
Ideal for class AB and C industrial, scientific, medical, and commercial applications.
Advantages
Features
Isolated Substrate
high isolation voltage (>2500V)
excellent thermal transfer
Increased temperature and power cycling
capability
IXYS RF Low Capacitance Z-MOSTM Process
Very low insertion inductance (
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