IXZ2210N50L2

IXZ2210N50L2 RF Power MOSFET N-channel enhancement mode linear RF power MOSFET VDSS = 500 V ID25 = 10 A Ideal for class AB and C industrial, scientific, medical, and commercial applications. Advantages Features  High Performance RF Package  Easy to mount—no insulators needed  Isolated Substrate  high isolation voltage (>2500V)  excellent thermal transfer  Increased temperature and power cycling DRAIN 2 DRAIN 1 capability  IXYS RF Low Capacitance Z-MOSTM Process  Very low insertion inductance (