IXZ316N60

IXZ316N60 Z-MOS RF Power MOSFET N-Channel Enhancement Mode Switch Mode RF MOSFET Low Capacitance Z-MOSTM MOSFET Process Optimized for RF Operation Ideal for Class C, D, & E Applications VDSS = 600 V ID25 = 18 A Symbol Test Conditions RDS(on) ≤ 0.47 Ω VDSS TJ = 25°C to 150°C 600 V PDC = 880 W VDGR TJ = 25°C to 150°C; RGS = 1 MΩ 600 V VGS Continuous ±20 V VGSM Transient ±30 V ID25 Tc = 25°C 18 A IDM Tc = 25°C, pulse width limited by TJM 90 A IAR Tc = 25°C 18 A EAR Tc = 25°C TBD mJ IS ≤ IDM, di/dt ≤ 100A/µs, VDD ≤ VDSS, Tj ≤ 150°C, RG = 0.2Ω 5 V/ns dv/dt >200 V/ns 880 W 440 W 3.0 W RthJC 0.17 C/W RthJHS 0.34 C/W Maximum Ratings IS = 0 DRAIN PDC GATE PDHS Tc = 25°C, Derate 4.4W/°C above 25°C PDAMB Tc = 25°C Symbol Test Conditions VDSS VGS = 0 V, ID = 4 ma VGS(th) VDS = VGS, ID = 250µΑ IGSS VGS = ±20 VDC, VDS = 0 IDSS VDS = 0.8VDSS VGS=0 RDS(on) gfs 3.2 V 4.0 TJ = 25C TJ =125C VGS = 15 V, ID = 0.5ID25 Pulse test, t ≤ 300µS, duty cycle d ≤ 2% VDS = 50V, ID = 0.5ID25, pulse test 0.44 4.0 5.5 V ±100 nA 50 1 µA mA 0.47 5.2 -55 +175 -55 Tstg 1.6mm(0.063 in) from case for 10 s Ω S 175 TJM Weight max. 600 TJ TL typ. °C °C + 175 SG2 SD1 SD2 Features Characteristic Values (TJ = 25°C unless otherwise specified) min. SG1 °C 300 °C 3.5 g • Isolated Substrate − high isolation voltage (>2500V) − excellent thermal transfer − Increased temperature and power • • − − • • • cycling capability IXYS advanced Z-MOS process Low gate charge and capacitances easier to drive faster switching Low RDS(on) Very low insertion inductance (