IXZ318N50

IXZ318N50 Z-MOS RF Power MOSFET N-Channel Enhancement Mode Switch Mode RF MOSFET Low Capacitance Z-MOSTM MOSFET Process Optimized for RF Operation Ideal for Class C, D, & E Applications VDSS = 500 V ID25 = 19 A Symbol Test Conditions RDS(on) ≤ 0.34 Ω VDSS TJ = 25°C to 150°C 500 V PDC = 880 W VDGR TJ = 25°C to 150°C; RGS = 1 MΩ 500 V VGS Continuous ±20 V VGSM Transient ±30 V ID25 Tc = 25°C 19 A IDM Tc = 25°C, pulse width limited by TJM 95 A IAR Tc = 25°C 19 A EAR Tc = 25°C TBD mJ IS ≤ IDM, di/dt ≤ 100A/µs, VDD ≤ VDSS, Tj ≤ 150°C, RG = 0.2Ω 5 V/ns dv/dt >200 V/ns 880 W 440 W 3.0 W RthJC 0.17 C/W RthJHS 0.34 C/W Maximum Ratings IS = 0 PDC PDHS Tc = 25°C PDAMB Tamb = 25°C Symbol Test Conditions VGS = 0 V, ID = 4 ma VGS(th) VDS = VGS, ID = 250µΑ IGSS VGS = ±20 VDC, VDS = 0 IDSS VDS = 0.8VDSS VGS=0 3.5 SG1 4.9 gfs VDS = 50 V, ID = 0.5ID25, pulse test 5.0 SG2 SD1 SD2 Features max. V TJ = 25C TJ =125C VGS = 20 V, ID = 0.5ID25 Pulse test, t ≤ 300µS, duty cycle d ≤ 2% 6.5 V ±100 nA 50 1 µA mA .32 .34 Ω 5.4 6.0 S +175 °C • Isolated Substrate − high isolation voltage (>2500V) − excellent thermal transfer − Increased temperature and power • • − − • • • cycling capability IXYS advanced Z-MOS process Low gate charge and capacitances easier to drive faster switching Low RDS(on) Very low insertion inductance (