IXZR08N120

IXZR08N120 & IXZR08N120A/B Z-MOS RF Power MOSFET N-Channel Enhancement Mode Switch Mode RF MOSFET Low Capacitance Z-MOSTM MOSFET Process Optimized for RF Operation Ideal for Class C, D, & E Applications VDSS = 1200 V ID25 = 8.0 A Symbol Test Conditions RDS(on) ≤ 1.5 Ω VDSS TJ = 25°C to 150°C 1200 V PDC = 250 W VDGR TJ = 25°C to 150°C; RGS = 1 MΩ 1200 V VGS Continuous ±20 V VGSM Transient ±30 V ID25 Tc = 25°C 8 A IDM Tc = 25°C, pulse width limited by TJM 40 A IAR Tc = 25°C 8 A EAR Tc = 25°C TBD mJ IS ≤ IDM, di/dt ≤ 100A/µs, VDD ≤ VDSS, Tj ≤ 150°C, RG = 0.2Ω 5 V/ns dv/dt >200 V/ns 250 W 180 W 3.0 W RthJC 0.60 C/W RthJHS 0.85 C/W Maximum Ratings PDC PDHS Tc = 25°C, Derate 4.4W/°C above 25°C PDAMB Tc = 25°C min. VDSS VGS = 0 V, ID = 4 ma VGS(th) VDS = VGS, ID = 250µΑ IGSS VGS = ±20 VDC, VDS = 0 IDSS VDS = 0.8VDSS VGS=0 typ. 4 TJ = 25C TJ =125C RDS(on) VGS = 15 V, ID = 0.5ID25 Pulse test, t ≤ 300µS, duty cycle d ≤ 2% gfs VDS = 20 V, ID = 0.5ID25, pulse test 4 V ±100 nA 50 1 µA mA 5.5 Ω 6.5 S +175 °C 175 TJM -55 Tstg Weight 6 1.4 -55 TJ TL V 4.9 1.6mm(0.063 in) from case for 10 s °C + 175 Features • Isolated Substrate − high isolation voltage (>2500V) − excellent thermal transfer − Increased temperature and power max. 1200 S D D G S G = G S 0 = D 12 0A = 12 0B 12 IS = 0 °C 300 °C 3.5 g • • − − • • • cycling capability IXYS advanced Z-MOS process Low gate charge and capacitances easier to drive faster switching Low RDS(on) Very low insertion inductance (