IXZR16N60

IXZR16N60 & IXZR16N60A/B Z-MOS RF Power MOSFET NChannel Enhancement N-Channel Enhancement ModeMode Switch Mode RF MOSFET Low Qg and RZ-MOS g Low Capacitance TM MOSFET Process High for dv/dt Optimized RF Operation Nanosecond Ideal for Class C, D,Switching & E Applications VDSS = 600 V ID25 = 18 A Symbol Test Conditions RDS(on) ≤ 0.56 Ω VDSS TJ = 25°C to 150°C 600 V 350 TJ = 25°C to 150°C; RGS = 1 MΩ 600 V PDC = VDGR VGS Continuous ±20 V VGSM Transient ±30 V ID25 Tc = 25°C 18 A IDM Tc = 25°C, pulse width limited by TJM 90 A IAR Tc = 25°C 18 A EAR Tc = 25°C TBD mJ IS ≤ IDM, di/dt ≤ 100A/µs, VDD ≤ VDSS, Tj ≤ 150°C, RG = 0.2Ω 5 V/ns dv/dt >200 V/ns 350 W TBD W 3.0 W RthJC TBD C/W RthJHS TBD C/W Maximum Ratings PDC PDHS Tc = 25°C, Derate 4.4W/°C above 25°C PDAMB Tc = 25°C Symbol Test Conditions VDSS VGS = 0 V, ID = 4 ma VGS(th) VDS = VGS, ID = 250µΑ IGSS VGS = ±20 VDC, VDS = 0 IDSS VDS = 0.8VDSS VGS=0 max. V 4.6 TJ = 25C TJ =125C VGS = 20 V, ID = 0.5ID25 Pulse test, t ≤ 300µS, duty cycle d ≤ 2% gfs VDS = 50V, ID = 0.5ID25, pulse test V ±100 nA 50 1 µA mA 0.53 Ω 6.4 S • Isolated Substrate − high isolation voltage (>2500V) − excellent thermal transfer − Increased temperature and power • • − − • • • cycling capability IXYS advanced Z-MOS process Low gate charge and capacitances easier to drive faster switching Low RDS(on) Very low insertion inductance (