IXZR18N50B-00

IXZR18N50 & IXZR18N50A/B Z-MOS RF Power MOSFET N-Channel Enhancement Mode Switch Mode RF MOSFET Low Capacitance Z-MOSTM MOSFET Process Optimized for RF Operation Ideal for Class C, D, & E Applications VDSS = 500 V ID25 = 19 A Symbol Test Conditions RDS(on) ≤ 0.37 Ω VDSS TJ = 25°C to 150°C 500 V PDC = 350 W VDGR TJ = 25°C to 150°C; RGS = 1 MΩ 500 V VGS Continuous ±20 V VGSM Transient ±30 V ID25 Tc = 25°C 19 A IDM Tc = 25°C, pulse width limited by TJM 95 A IAR Tc = 25°C 19 A EAR Tc = 25°C TBD mJ IS ≤ IDM, di/dt ≤ 100A/µs, VDD ≤ VDSS, Tj ≤ 150°C, RG = 0.2Ω 5 V/ns dv/dt >200 V/ns 350 W TBD W 3.0 W RthJC TBD C/W RthJHS TBD C/W Maximum Ratings PDC PDHS Tc = 25°C, Derate 4.4W/°C above 25°C PDAMB Tc = 25°C S D D G = G SS G 50 A = D 50 B = 50 IS = 0 Features Symbol Test Conditions Characteristic Values (TJ = 25°C unless otherwise specified) VDSS VGS = 0 V, ID = 4 ma VGS(th) VDS = VGS, ID = 250µΑ IGSS VGS = ±20 VDC, VDS = 0 IDSS VDS = 0.8VDSS VGS=0 =125C min. V 4.6 TJ = 25C TJ VGS = 20 V, ID = 0.5ID25 Pulse test, t ≤ 300µS, duty cycle d ≤ 2% gfs VDS = 50 V, ID = 0.5ID25, pulse test V ±100 nA 50 1 µA mA 0.37 Ω 6.7 S +175 175 TJM -55 Tstg 1.6mm(0.063 in) from case for 10 s • • − − • • • cycling capability IXYS advanced Z-MOS process Low gate charge and capacitances easier to drive faster switching Low RDS(on) Very low insertion inductance (2500V) − excellent thermal transfer − Increased temperature and power °C °C + 175 °C 300 °C 3.5 g • Optimized for RF and high speed • Easy to mount—no insulators needed • High power density IXZR18N50 & IXZR18N50A/B Z-MOS RF Power MOSFET Symbol Test Conditions Characteristic Values (TJ = 25°C unless otherwise specified) min. typ. max. 1 RG Ciss Coss 2020 pF 172 pF 21 pF 33 pF 4 ns 4 ns 4 ns 5 ns 42 nC 14 nC 21 nC VGS = 0 V, VDS = 0.8 VDSS(max), f = 1 MHz Crss Cstray Back Metal to any Pin Td(on) Ton Td(off) VGS = 15 V, VDS = 0.8 VDSS ID = 0.5 IDM RG = 1 Ω (External) Toff Qg(on) Qgs VGS = 10 V, VDS = 0.5 VDSS ID = 0.5 ID25 IG = 3mA Qgd Source-Drain Diode Symbol Test Conditions IS VGS = 0 V ISM Repetitive; pulse width limited by TJM VSD IF = Is, VGS=0 V, Pulse test, t ≤ 300µs, duty cycle ≤2% Ω Characteristic Values (TJ = 25°C unless otherwise specified) min. typ. max. 200 Trr 19 Α 114 A 1.5 V ns CAUTION: Operation at or above the Maximum Ratings values may impact device reliability or cause permanent damage to the device. Information in this document is believed to be accurate and reliable. IXYSRF reserves the right to make changes to information published in this document at any time and without notice. IXYS RF reserves the right to change limits, test conditions and dimensions. IXYS RF MOSFETS are covered by one or more of the following U.S. patents: 4,835,592 4,860,072 4,881,106 4,891,686 4,931,844 5,034,796 5,049,961 5,063,307 5,187,117 5,237,481 5,381,025 5,640,045 6,404,065 6,583,505 6,710,463 6,731,002 5,017,508 5,486,715 6,727,585 IXZR18N50 & IXZR18N50A/B Z-MOS RF Power MOSFET Fig. 2 Gate Charge vs. Gate-to-Source Voltage V DS = 250V, ID = 9.5A, IG = 3m A Typical Output Characteristics 16 30 14 25 8V - 15V ID , Drain Currnet (A) Gate-to-Source Voltage (V) Fig. 1 12 10 8 6 4 7.5V 20 15 7V 10 6.5V 5 2 6V 0 0 0 20 40 60 0 80 20 Gate Charge (nC) 40 60 80 100 120 VDS, Drain-to-Source Voltage (V) Fig. 3 Fig. 4 Typical Transfer Characteristics V DS = 50V Extended Typical Output Characteristics 60 Top 80 ID , Drain Currnet (A) ID , Drain Current (A) 50 40 30 20 10 60 Bottom 40 20 0 0 5 6 7 8 9 10 11 12 13 14 0 15 Fig. 5 VDS vs. Capacitance 10000 Ciss 1000 Coss 100 Crss 10 1 0 50 100 150 200 250 VDS Voltage (V) 20 40 60 80 100 VDS, Drain-to-Source Voltage (V) VGS, Gate-to Source Voltage (V) Capacitance (pF) 12V - 15V 10V 9V 8.5V 8V 7.5V 7V 6.5V 6V 300 350 400 120 IXZR18N50 & IXZR18N50A/B Z-MOS RF Power MOSFET Fig. 6 Package Drawing 1 2 3 50: 1=G, 2=D, 3=S 50A: 1=G, 2=S, 3= D 50B: 1=D, 2=S, 3=G Doc #dsIXZR18N50_A/B REV 08/09 © 2009 IXYS RF An IXYS Company 2401 Research Blvd., Suite 108 Fort Collins, CO USA 80526 970-493-1901 Fax: 970-493-1903 Email: sales@ixyscolorado.com Web: http://www.ixyscolorado.com