MCD40-12IO6

MCD40-12io6 Thyristor VRRM = 2x 1200 V I TAV = 40 A VT = 1.29 V Phase leg Part number MCD40-12io6 Backside: isolated 4 3 1 2 Features / Advantages: Applications: Package: SOT-227B (minibloc) ● Thyristor for line frequency ● Planar passivated chip ● Long-term stability ● Line rectifying 50/60 Hz ● Softstart AC motor control ● DC Motor control ● Power converter ● AC power control ● Lighting and temperature control ● Isolation Voltage: 3000 V~ ● Industry standard outline ● RoHS compliant ● Epoxy meets UL 94V-0 ● Base plate: Copper internally DCB isolated ● Advanced power cycling Disclaimer Notice Information furnished is believed to be accurate and reliable. However, users should independently evaluate the suitability of and test each product selected for their own applications. Littelfuse products are not designed for, and may not be used in, all applications. Read complete Disclaimer Notice at www.littelfuse.com/disclaimer-electronics. IXYS reserves the right to change limits, conditions and dimensions. © 2019 IXYS all rights reserved Data according to IEC 60747and per semiconductor unless otherwise specified 20191205c MCD40-12io6 Ratings Rectifier Conditions Symbol VRSM/DSM Definition max. non-repetitive reverse/forward blocking voltage TVJ = 25°C VRRM/DRM max. repetitive reverse/forward blocking voltage TVJ = 25°C 1200 I R/D reverse current, drain current VT forward voltage drop TVJ = 25°C 100 µA 6 mA TVJ = 25°C 1.29 V 1.61 V 1.29 V IT = 40 A IT = 80 A IT = 40 A IT = 80 A I T(RMS) RMS forward current 180° sine VT0 threshold voltage rT slope resistance R thJC thermal resistance junction to case TVJ = 125 °C for power loss calculation only thermal resistance case to heatsink total power dissipation I TSM max. forward surge current value for fusing V TVJ = 125°C TC = 95 °C RthCH max. Unit 1300 V VR/D = 1200 V average forward current Ptot typ. VR/D = 1200 V I TAV I²t min. 1.70 V T VJ = 150 °C 40 A 63 A TVJ = 150 °C 0.87 V 10.5 mΩ 0.7 K/W 0.1 K/W TC = 25°C 180 W t = 10 ms; (50 Hz), sine TVJ = 45°C 500 A t = 8,3 ms; (60 Hz), sine VR = 0 V 540 A t = 10 ms; (50 Hz), sine TVJ = 150 °C 425 A t = 8,3 ms; (60 Hz), sine VR = 0 V 460 A t = 10 ms; (50 Hz), sine TVJ = 45°C 1.25 kA²s t = 8,3 ms; (60 Hz), sine VR = 0 V 1.22 kA²s t = 10 ms; (50 Hz), sine TVJ = 150 °C 905 A²s 880 A²s t = 8,3 ms; (60 Hz), sine VR = 0 V CJ junction capacitance VR = 400 V f = 1 MHz TVJ = 25°C PGM max. gate power dissipation t P = 30 µs T C = 150 °C 25 t P = 300 µs pF 10 W 5 W 0.5 W PGAV average gate power dissipation (di/dt) cr critical rate of rise of current TVJ = 150 °C; f = 50 Hz repetitive, IT = 120 A t P = 200 µs; di G /dt = 0.3 A/µs; (dv/dt)cr critical rate of rise of voltage V = ⅔ VDRM VGT gate trigger voltage VD = 6 V TVJ = 25 °C TVJ = -40 °C 1.6 V I GT gate trigger current VD = 6 V TVJ = 25 °C 100 mA TVJ = -40 °C 150 mA VGD gate non-trigger voltage TVJ = 150°C 0.2 V I GD gate non-trigger current 5 mA IL latching current TVJ = 25 °C 450 mA IG = 0.3 A; V = ⅔ VDRM non-repet., I T = 100 A/µs 40 A 500 A/µs 1000 V/µs TVJ = 150°C R GK = ∞; method 1 (linear voltage rise) VD = ⅔ VDRM tp = 10 µs IG = 0.3 A; di G /dt = 1.5 V 0.3 A/µs IH holding current VD = 6 V R GK = ∞ TVJ = 25 °C 100 mA t gd gate controlled delay time VD = ½ VDRM TVJ = 25 °C 2 µs tq turn-off time IG = 0.3 A; di G /dt = VR = 100 V; I T = 0.3 A/µs 40A; V = ⅔ VDRM TVJ =125 °C di/dt = 10 A/µs dv/dt = IXYS reserves the right to change limits, conditions and dimensions. © 2019 IXYS all rights reserved 150 µs 20 V/µs t p = 200 µs Data according to IEC 60747and per semiconductor unless otherwise specified 20191205c MCD40-12io6 Package Ratings SOT-227B (minibloc) Symbol I RMS Definition Conditions RMS current per terminal min. TVJ virtual junction temperature T op operation temperature Tstg storage temperature -40 typ. max. 150 Unit A -40 150 °C -40 125 °C 150 °C 30 Weight g MD mounting torque 1.1 1.5 Nm MT terminal torque 1.1 1.5 Nm d Spp/App creepage distance on surface | striking distance through air d Spb/Apb VISOL terminal to terminal 10.5 terminal to backside 8.6 t = 1 second isolation voltage t = 1 minute 50/60 Hz, RMS; IISOL ≤ 1 mA 3.2 mm 6.8 mm 3000 V 2500 V Product Marking Logo XXXXX ® yywwZ 1234 Date Code Location Ordering Standard Part Number UL Lot# Ordering Number MCD40-12io6 Similar Part MCD40-16io6 CLA60PD1200NA CLA100PD1200NA Equivalent Circuits for Simulation I V0 R0 Marking on Product MCD40-12io6 Package SOT-227B (minibloc) SOT-227B (minibloc) SOT-227B (minibloc) * on die level Delivery Mode Tube Code No. 469742 Voltage class 1600 1200 1200 T VJ = 150°C Thyristor V 0 max threshold voltage 0.87 V R0 max slope resistance * 9.7 mΩ IXYS reserves the right to change limits, conditions and dimensions. © 2019 IXYS all rights reserved Quantity 10 Data according to IEC 60747and per semiconductor unless otherwise specified 20191205c MCD40-12io6 Outlines SOT-227B (minibloc) 4 IXYS reserves the right to change limits, conditions and dimensions. © 2019 IXYS all rights reserved 3 1 2 Data according to IEC 60747and per semiconductor unless otherwise specified 20191205c MCD40-12io6 Thyristor 80 450 1400 50 Hz, 80% VRRM 400 1200 60 TVJ = 45°C 350 1000 2 ITSM IT 40 It 300 800 [A s] 250 20 125°C 150°C TVJ = 45°C 2 [A] [A] VR = 0 V 600 TVJ = 125°C 200 TVJ = 125°C 400 TVJ = 25°C 0 0,4 150 0,8 1,2 1,6 200 2,0 0,01 0,1 10 4 5 6 7 8 910 t [ms] 2 TVJ = 25°C dc = 1 0.5 0.4 0.33 0.17 0.08 80 typ. 100 VG [V] 3 Fig. 3 I t versus time (1-10 ms) 2: IGT, TVJ = 25°C 3: IGT, TVJ = -40°C 3 1 2 Fig. 2 Surge overload current 1000 1: IGT, TVJ = 125°C 1 t [s] VT [V] Fig. 1 Forward characteristics 1 5 2 1 6 4 Limit 60 tgd IT(AV)M [µs] [A] 40 10 20 4: PGAV = 0.5 W 0,1 5: PGM = 5 W 6: PGM = 10 W IGD, TVJ = 125°C 1 10 100 1000 0 1 10 10000 IG [mA] Fig. 4 Gate trigger characteristics 100 0 1000 50 75 100 125 150 TC [°C] IG [mA] Fig. 5 Gate controlled delay time 80 25 Fig. 6 Max. forward current at case temperature 0,8 dc = 1 0.5 0.4 0.33 0.17 0.08 60 P(AV) RthHA 0.4 0.6 0.8 1.0 2.0 4.0 40 0,6 ZthJC 0,4 [W] [K/W] 20 Rthi [K/W] 0.059 0.108 0.357 0.176 0,2 0 0 10 20 30 40 50 IT(AV) [A] 0 50 100 150 Tamb [°C] © 2019 IXYS all rights reserved 101 102 103 104 t [ms] Fig. 7a Power dissipation versus direct output current Fig. 7b and ambient temperature IXYS reserves the right to change limits, conditions and dimensions. 0,0 100 ti [s] 0.0006 0.017 0.104 0.450 Fig. 8 Transient thermal impedance junction to case Data according to IEC 60747and per semiconductor unless otherwise specified 20191205c