MCMA200P1600SA

MCMA200P1600SA on request Thyristor Module VRRM = 2x 1600 V I TAV = 200 A VT = 1.13 V Phase leg Part number MCMA200P1600SA Backside: isolated 1 8 7 3/4 6 5 2 Features / Advantages: Applications: Package: SimBus A ● Thyristor for line frequency ● Planar passivated chip ● Long-term stability ● Copper base plate with Direct Copper Bonded Al2O3-ceramic ● Spring contacts for solder-free dirver connection ● Line rectifying 50/60 Hz ● Softstart AC motor control ● DC Motor control ● Power converter ● AC power control ● Lighting and temperature control ● Isolation Voltage: 4800 V~ ● Industry standard outline ● RoHS compliant ● Gate: Spring contacts for solder-free PCB-mounting ● Height: 17 mm ● Base plate: Copper internally DCB isolated ● Advanced power cycling Disclaimer Notice Information furnished is believed to be accurate and reliable. However, users should independently evaluate the suitability of and test each product selected for their own applications. Littelfuse products are not designed for, and may not be used in, all applications. Read complete Disclaimer Notice at www.littelfuse.com/disclaimer-electronics. IXYS reserves the right to change limits, conditions and dimensions. © 2019 IXYS all rights reserved Data according to IEC 60747and per semiconductor unless otherwise specified 20191210c MCMA200P1600SA on request Ratings Thyristor Conditions Symbol VRSM/DSM Definition max. non-repetitive reverse/forward blocking voltage TVJ = 25°C VRRM/DRM max. repetitive reverse/forward blocking voltage TVJ = 25°C 1600 I R/D reverse current, drain current VT forward voltage drop min. typ. VR/D = 1600 V TVJ = 25°C 200 µA TVJ = 125°C 15 mA I T = 200 A TVJ = 25°C 1.16 V 1.40 V 1.13 V TVJ = 125 °C I T = 200 A I T = 400 A I TAV average forward current TC = 90 °C I T(RMS) RMS forward current 180° sine VT0 threshold voltage rT slope resistance R thJC thermal resistance junction to case for power loss calculation only RthCH thermal resistance case to heatsink total power dissipation I TSM max. forward surge current I²t value for fusing V VR/D = 1600 V I T = 400 A Ptot max. Unit 1700 V 1.44 V T VJ = 140 °C 200 A 314 A TVJ = 140 °C 0.81 V 1.6 mΩ 0.15 K/W 0.08 K/W TC = 25°C 760 W t = 10 ms; (50 Hz), sine TVJ = 45°C 6.00 kA t = 8,3 ms; (60 Hz), sine VR = 0 V 6.48 kA t = 10 ms; (50 Hz), sine TVJ = 140 °C 5.10 kA t = 8,3 ms; (60 Hz), sine VR = 0 V 5.51 kA t = 10 ms; (50 Hz), sine TVJ = 45°C 180.0 kA²s t = 8,3 ms; (60 Hz), sine VR = 0 V 174.7 kA²s t = 10 ms; (50 Hz), sine TVJ = 140 °C 130.1 kA²s t = 8,3 ms; (60 Hz), sine VR = 0 V CJ junction capacitance VR = 400 V f = 1 MHz TVJ = 25°C PGM max. gate power dissipation t P = 30 µs T C = 140 °C 126.3 kA²s 273 t P = 300 µs pF 120 W 60 W 8 W PGAV average gate power dissipation (di/dt) cr critical rate of rise of current TVJ = 140 °C; f = 50 Hz repetitive, IT = 600 A t P = 200 µs; di G /dt = 0.5 A/µs; (dv/dt)cr critical rate of rise of voltage V = ⅔ VDRM VGT gate trigger voltage VD = 6 V TVJ = 25 °C TVJ = -40 °C 2.6 V I GT gate trigger current VD = 6 V TVJ = 25 °C 150 mA TVJ = -40 °C 200 mA VGD gate non-trigger voltage TVJ = 140°C 0.2 V I GD gate non-trigger current 10 mA IL latching current TVJ = 25 °C 300 mA IG = 0.5 A; V = ⅔ VDRM 150 A/µs non-repet., I T = 200 A 500 A/µs 1000 V/µs TVJ = 140°C R GK = ∞; method 1 (linear voltage rise) VD = ⅔ VDRM tp = 30 µs IG = 0.5 A; di G /dt = 2.5 V 0.5 A/µs IH holding current VD = 6 V R GK = ∞ TVJ = 25 °C 200 mA t gd gate controlled delay time VD = ½ VDRM TVJ = 25 °C 2 µs tq turn-off time IG = 0.5 A; di G /dt = 0.5 A/µs VR = 100 V; I T = 200A; V = ⅔ VDRM TVJ =125 °C di/dt = 10 A/µs dv/dt = IXYS reserves the right to change limits, conditions and dimensions. © 2019 IXYS all rights reserved 150 µs 20 V/µs t p = 200 µs Data according to IEC 60747and per semiconductor unless otherwise specified 20191210c MCMA200P1600SA on request Package Ratings SimBus A Symbol I RMS Definition Conditions RMS current per terminal min. TVJ virtual junction temperature T op operation temperature Tstg storage temperature -40 max. 300 Unit A -40 140 °C -40 125 °C 125 °C 152 Weight MD mounting torque MT terminal torque d Spp/App Date Code Logo UL 14.0 Location Part Number Ordering Standard M C M A 200 P 1600 SA 2D Barcode Ordering Number MCMA200P1600SA Similar Part MCMA200PD1600SA Equivalent Circuits for Simulation R0 50/60 Hz, RMS; IISOL ≤ 1 mA Marking on Product MCMA200P1600SA Package Simbus A * on die level = = = = = = = = 3 5 Nm 2.5 5 Nm 10.0 mm 10.0 mm 4800 V 4000 V Module Thyristor (SCR) Thyristor (up to 1800V) Current Rating [A] Phase leg Reverse Voltage [V] SimBus A Delivery Mode Blister Quantity 9 Code No. 510387 Voltage class 1600 T VJ = 140°C Thyristor V 0 max threshold voltage 0.81 V R0 max slope resistance * 0.8 mΩ IXYS reserves the right to change limits, conditions and dimensions. © 2019 IXYS all rights reserved g Part description yywwZ XXXXXXXXX V0 14.0 t = 1 second isolation voltage t = 1 minute I terminal to terminal terminal to backside creepage distance on surface | striking distance through air d Spb/Apb VISOL typ. Data according to IEC 60747and per semiconductor unless otherwise specified 20191210c MCMA200P1600SA on request Outlines SimBus A 1 IXYS reserves the right to change limits, conditions and dimensions. © 2019 IXYS all rights reserved 8 7 3/4 6 5 2 Data according to IEC 60747and per semiconductor unless otherwise specified 20191210c MCMA200P1600SA on request Thyristor 400 106 6000 VR = 0 V 50 Hz, 80% VRRM 300 5000 ITSM IT 200 105 TVJ = 45°C [A] [A] TVJ = 45°C 2 It 4000 [A2s] TVJ = 140°C TVJ = 125°C 100 3000 140°C TVJ = 140°C TVJ = 25°C 0 0.0 104 2000 0.5 1.0 1.5 0.01 0.1 VT [V] 1 1 t [s] Fig. 3 I t vs. time per thyristor 350 2: IGT, TVJ = 25°C 3: IGT, TVJ = -40°C 4 1 200 [A] [V] [μs] 1.0 10-2 10-1 4: PGM = 8 W 5: PGM = 60 W 6: PGM = 120 W 100 250 ITAVM tgd 5 1 TVJ = 25°C 10.0 6 2 0.1 10-3 dc = 1 0.5 0.4 0.33 0.17 0.08 300 3 IGD, TVJ = 140°C 4 5 6 7 8 910 t [ms] 100.0 10 1: I , T = 125°C GT VJ 3 2 Fig. 2 Surge overload current vs. time per thyristor Fig. 1 Forward current vs. voltage drop per thyristor VG 2 101 lim. 150 typ. 100 50 0.1 0.01 102 0 0.10 1.00 10.00 0 40 IG [A] IG [A] Fig. 4 Gate voltage & gate current 80 120 160 Tcase [°C] Fig. 5 Gate controlled delay time tgd Fig. 6 Max. forward current vs. case temperature per thyr. 0.16 350 300 RthHA 0.08 0.10 0.20 0.40 0.60 0.80 dc = 1 0.5 0.4 0.33 0.17 0.08 250 Ptot 200 [W] i Rthi (K/W) 1 0.0050 2 0.0110 3 0.0430 4 0.0610 5 0.0300 0.12 ZthJC ti (s) 0.00010 0.01800 0.16000 0.50000 1.60000 0.08 150 [K/W] 100 0.04 50 0.00 0 0 50 100 150 200 250 IT(AV) [A] 0 50 100 Tamb [°C] Fig. 7 Power dissipation vs. forward current and ambient temperature per thyristor IXYS reserves the right to change limits, conditions and dimensions. © 2019 IXYS all rights reserved 150 1 10 100 1000 10000 t [ms] Fig. 8 Transient thermal impedance junction to case vs. time per thyristor Data according to IEC 60747and per semiconductor unless otherwise specified 20191210c