MCO25-16IO1

MCO25-16io1 Thyristor VRRM = 1600 V I TAV = 32 A VT = 1.21 V Single Thyristor Part number MCO25-16io1 Backside: isolated 3 1/4 2 Features / Advantages: Applications: Package: SOT-227B (minibloc) ● Thyristor for line frequency ● Planar passivated chip ● Long-term stability ● Line rectifying 50/60 Hz ● Softstart AC motor control ● DC Motor control ● Power converter ● AC power control ● Lighting and temperature control ● Isolation Voltage: 3000 V~ ● Industry standard outline ● RoHS compliant ● Epoxy meets UL 94V-0 ● Base plate: Copper internally DCB isolated ● Advanced power cycling Disclaimer Notice Information furnished is believed to be accurate and reliable. However, users should independently evaluate the suitability of and test each product selected for their own applications. Littelfuse products are not designed for, and may not be used in, all applications. Read complete Disclaimer Notice at www.littelfuse.com/disclaimer-electronics. IXYS reserves the right to change limits, conditions and dimensions. © 2019 IXYS all rights reserved Data according to IEC 60747and per semiconductor unless otherwise specified 20191210c MCO25-16io1 Ratings Thyristor Conditions Symbol VRSM/DSM Definition max. non-repetitive reverse/forward blocking voltage TVJ = 25°C VRRM/DRM max. repetitive reverse/forward blocking voltage TVJ = 25°C 1600 I R/D reverse current, drain current VT forward voltage drop TVJ = 25°C 50 µA 2 mA TVJ = 25°C 1.23 V 1.50 V 1.21 V IT = 25 A IT = 50 A IT = 25 A IT = 50 A I T(RMS) RMS forward current 180° sine VT0 threshold voltage rT slope resistance R thJC thermal resistance junction to case TVJ = for power loss calculation only thermal resistance case to heatsink total power dissipation I TSM max. forward surge current value for fusing V TVJ = 125°C TC = 80 °C RthCH max. Unit 1700 V VR/D = 1600 V average forward current Ptot typ. VR/D = 1600 V I TAV I²t min. °C 1.55 V T VJ = 150 °C 32 A 50 A TVJ = 150 °C 0.86 V 13.9 mΩ 1.1 K/W 0.3 K/W TC = 25°C 110 W t = 10 ms; (50 Hz), sine TVJ = 45°C 370 A t = 8,3 ms; (60 Hz), sine VR = 0 V 400 A t = 10 ms; (50 Hz), sine TVJ = 150 °C 315 A t = 8,3 ms; (60 Hz), sine VR = 0 V 340 A t = 10 ms; (50 Hz), sine TVJ = 45°C 685 A²s t = 8,3 ms; (60 Hz), sine VR = 0 V 665 A²s t = 10 ms; (50 Hz), sine TVJ = 150 °C 495 A²s 480 A²s t = 8,3 ms; (60 Hz), sine VR = 0 V CJ junction capacitance VR = 400 V f = 1 MHz TVJ = 25°C PGM max. gate power dissipation t P = 30 µs T C = 150 °C 16 t P = 300 µs pF 10 W 1 W 0.5 W PGAV average gate power dissipation (di/dt) cr critical rate of rise of current TVJ = 150 °C; f = 50 Hz repetitive, IT = t P = 200 µs; di G /dt = 0.2 A/µs; 90 A IG = 30 A (dv/dt)cr critical rate of rise of voltage V = ⅔ VDRM VGT gate trigger voltage VD = 6 V TVJ = 25 °C 1.5 TVJ = -40 °C 1.6 V I GT gate trigger current VD = 6 V TVJ = 25 °C 55 mA TVJ = -40 °C 80 mA VGD gate non-trigger voltage TVJ = 150°C 0.2 V I GD gate non-trigger current 5 mA IL latching current TVJ = 25 °C 150 mA 0.2 A; V = ⅔ VDRM non-repet., I T = 150 A/µs 500 A/µs 1000 V/µs TVJ = 150°C R GK = ∞; method 1 (linear voltage rise) VD = ⅔ VDRM tp = 10 µs IG = 0.2 A; di G /dt = V 0.2 A/µs IH holding current VD = 6 V R GK = ∞ TVJ = 25 °C 100 mA t gd gate controlled delay time VD = ½ VDRM TVJ = 25 °C 2 µs tq turn-off time IG = 0.2 A; di G /dt = VR = 100 V; I T = 0.2 A/µs 30A; V = ⅔ VDRM TVJ =125 °C di/dt = 10 A/µs dv/dt = IXYS reserves the right to change limits, conditions and dimensions. © 2019 IXYS all rights reserved 150 µs 15 V/µs t p = 200 µs Data according to IEC 60747and per semiconductor unless otherwise specified 20191210c MCO25-16io1 Package Ratings SOT-227B (minibloc) Symbol I RMS Definition Conditions RMS current per terminal min. TVJ virtual junction temperature T op operation temperature Tstg storage temperature -40 typ. max. 150 Unit A -40 150 °C -40 125 °C 150 °C 1) 30 Weight g MD mounting torque 1.1 1.5 Nm MT terminal torque 1.1 1.5 Nm d Spp/App creepage distance on surface | striking distance through air d Spb/Apb VISOL 10.5 8.6 t = 1 second isolation voltage t = 1 minute 1) terminal to terminal terminal to backside 50/60 Hz, RMS; IISOL ≤ 1 mA 3.2 mm 6.8 mm 3000 V 2500 V IRMS is typically limited by the pin-to-chip resistance (1); or by the current capability of the chip (2). In case of (1) and a product with multiple pins for one chip-potential, the current capability can be increased by connecting the pins as one contact. Product Marking Logo XXXXX ® yywwZ 1234 Date Code Location Ordering Standard Part Number UL Lot# Ordering Number MCO25-16io1 Equivalent Circuits for Simulation I V0 R0 * on die level Delivery Mode Tube Quantity 10 Code No. 500548 T VJ = 150°C Thyristor V 0 max threshold voltage 0.86 R0 max slope resistance * 12 IXYS reserves the right to change limits, conditions and dimensions. © 2019 IXYS all rights reserved Marking on Product MCO25-16io1 V mΩ Data according to IEC 60747and per semiconductor unless otherwise specified 20191210c MCO25-16io1 Outlines SOT-227B (minibloc) 3 1/4 2 IXYS reserves the right to change limits, conditions and dimensions. © 2019 IXYS all rights reserved Data according to IEC 60747and per semiconductor unless otherwise specified 20191210c MCO25-16io1 Thyristor 60 350 1000 50 Hz, 80% VRRM VR = 0 V 300 40 250 IT 2 ITSM TVJ = 45°C 200 [A] 20 [A] 125°C 150°C TVJ = 45°C It [A2s] TVJ = 125°C TVJ = 125°C 150 TVJ = 25°C 0 0,5 100 1,0 100 1,5 0,01 0,1 1 VT [V] t [ms] 1000 dc = 1 0.5 0.4 0.33 0.17 0.08 50 40 100 typ. tgd 23 [V] 4 5 6 7 8 910 Fig. 3 I t versus time (1-10 ms) 6 1 3 2 Fig. 2 Surge overload current 1: IGD, TVJ = 150°C 2: IGT, TVJ = 25°C 3: IGT, TVJ = -40°C VG 2 t [s] Fig. 1 Forward characteristics 10 1 1 4 IT(AV)M Limit 30 [A] [µs] 5 20 10 TVJ = 125°C 10 4: PGAV = 0.5 W 5: PGM = 1 W 6: PGM = 10 W 0,1 1 10 100 1000 1 10 10000 0 100 1000 0 25 IG [mA] IG [mA] Fig. 4 Gate trigger characteristics 75 100 125 150 TC [°C] Fig. 5 Gate controlled delay time Fig. 6 Max. forward current at case temperature 1,2 RthHA 0.4 0.6 0.8 1.0 2.0 4.0 dc = 1 60 0.5 0.4 0.33 P(AV) 0.17 0.08 40 50 1,0 0,8 ZthJC 0,6 [W] [K/W] 20 0 0 10 20 30 40 IT(AV) [A] 0 50 100 150 Tamb [°C] © 2019 IXYS all rights reserved ti [s] 0.09 0.08 0.011 0.001 0,2 0.25 0.28 0.40 0.05 0.5 0.2 0,0 100 101 102 103 104 t [ms] Fig. 7a Power dissipation versus direct output current Fig. 7b and ambient temperature IXYS reserves the right to change limits, conditions and dimensions. Rthi [K/W] 0,4 Fig. 8 Transient thermal impedance junction to case Data according to IEC 60747and per semiconductor unless otherwise specified 20191210c