MCO75-12IO1

MCO75-12io1 Thyristor VRRM = 1200 V I TAV = 80 A VT = 1.27 V Single Thyristor Part number MCO75-12io1 Backside: isolated 3 1/4 2 Features / Advantages: Applications: Package: SOT-227B (minibloc) ● Thyristor for line frequency ● Planar passivated chip ● Long-term stability ● Line rectifying 50/60 Hz ● Softstart AC motor control ● DC Motor control ● Power converter ● AC power control ● Lighting and temperature control ● Isolation Voltage: 3000 V~ ● Industry standard outline ● RoHS compliant ● Epoxy meets UL 94V-0 ● Base plate: Copper internally DCB isolated ● Advanced power cycling Disclaimer Notice Information furnished is believed to be accurate and reliable. However, users should independently evaluate the suitability of and test each product selected for their own applications. Littelfuse products are not designed for, and may not be used in, all applications. Read complete Disclaimer Notice at www.littelfuse.com/disclaimer-electronics. IXYS reserves the right to change limits, conditions and dimensions. © 2019 IXYS all rights reserved Data according to IEC 60747and per semiconductor unless otherwise specified 20191210c MCO75-12io1 Ratings Thyristor Conditions Symbol VRSM/DSM Definition max. non-repetitive reverse/forward blocking voltage TVJ = 25°C VRRM/DRM max. repetitive reverse/forward blocking voltage TVJ = 25°C I R/D reverse current, drain current VT forward voltage drop min. typ. 1200 VR/D = 1200 V TVJ = 25°C 50 µA TVJ = 125°C 10 mA IT = TVJ = 25°C 1.28 V 1.60 V 1.27 V IT = 75 A TVJ = 125 °C 75 A I T = 150 A I TAV average forward current TC = 80 °C I T(RMS) RMS forward current 180° sine VT0 threshold voltage rT slope resistance R thJC thermal resistance junction to case for power loss calculation only RthCH thermal resistance case to heatsink total power dissipation I TSM max. forward surge current I²t value for fusing V VR/D = 1200 V I T = 150 A Ptot max. Unit 1300 V 1.67 V T VJ = 150 °C 80 A 125 A TVJ = 150 °C 0.85 V 5.5 mΩ 0.45 K/W 0.1 K/W TC = 25°C 270 W t = 10 ms; (50 Hz), sine TVJ = 45°C 1.07 kA t = 8,3 ms; (60 Hz), sine VR = 0 V 1.16 kA t = 10 ms; (50 Hz), sine TVJ = 150 °C 910 A t = 8,3 ms; (60 Hz), sine VR = 0 V 980 A t = 10 ms; (50 Hz), sine TVJ = 45°C 5.73 kA²s t = 8,3 ms; (60 Hz), sine VR = 0 V 5.55 kA²s t = 10 ms; (50 Hz), sine TVJ = 150 °C 4.14 kA²s t = 8,3 ms; (60 Hz), sine VR = 0 V CJ junction capacitance VR = 400 V f = 1 MHz TVJ = 25°C PGM max. gate power dissipation t P = 30 µs T C = 150 °C 4.00 kA²s 54 t P = 300 µs pF 10 W 5 W 0.5 W PGAV average gate power dissipation (di/dt) cr critical rate of rise of current TVJ = 150 °C; f = 50 Hz repetitive, IT = 225 A t P = 200 µs; di G /dt = 0.3 A/µs; (dv/dt)cr critical rate of rise of voltage V = ⅔ VDRM VGT gate trigger voltage VD = 6 V TVJ = 25 °C TVJ = -40 °C 1.6 V I GT gate trigger current VD = 6 V TVJ = 25 °C 100 mA TVJ = -40 °C 200 mA VGD gate non-trigger voltage TVJ = 150°C 0.2 V I GD gate non-trigger current 10 mA IL latching current TVJ = 25 °C 450 mA IG = 0.3 A; V = ⅔ VDRM non-repet., I T = 150 A/µs 75 A 500 A/µs 1000 V/µs TVJ = 150°C R GK = ∞; method 1 (linear voltage rise) VD = ⅔ VDRM tp = 10 µs IG = 0.3 A; di G /dt = 1.5 V 0.3 A/µs IH holding current VD = 6 V R GK = ∞ TVJ = 25 °C 200 mA t gd gate controlled delay time VD = ½ VDRM TVJ = 25 °C 2 µs tq turn-off time IG = 0.3 A; di G /dt = VR = 100 V; I T = 0.3 A/µs 75A; V = ⅔ VDRM TVJ =125 °C di/dt = 10 A/µs dv/dt = IXYS reserves the right to change limits, conditions and dimensions. © 2019 IXYS all rights reserved 150 µs 15 V/µs t p = 200 µs Data according to IEC 60747and per semiconductor unless otherwise specified 20191210c MCO75-12io1 Package Ratings SOT-227B (minibloc) Symbol I RMS Definition Conditions RMS current per terminal min. TVJ virtual junction temperature T op operation temperature Tstg storage temperature -40 typ. max. 150 Unit A -40 150 °C -40 125 °C 150 °C 1) 30 Weight g MD mounting torque 1.1 1.5 Nm MT terminal torque 1.1 1.5 Nm d Spp/App creepage distance on surface | striking distance through air d Spb/Apb VISOL 10.5 8.6 t = 1 second isolation voltage t = 1 minute 1) terminal to terminal terminal to backside 50/60 Hz, RMS; IISOL ≤ 1 mA 3.2 mm 6.8 mm 3000 V 2500 V IRMS is typically limited by the pin-to-chip resistance (1); or by the current capability of the chip (2). In case of (1) and a product with multiple pins for one chip-potential, the current capability can be increased by connecting the pins as one contact. Product Marking Logo XXXXX ® yywwZ 1234 Date Code Location Ordering Standard Part Number UL Lot# Ordering Number MCO75-12io1 Equivalent Circuits for Simulation I V0 R0 Marking on Product MCO75-12io1 * on die level Delivery Mode Tube Code No. 505515 T VJ = 150°C Thyristor V 0 max threshold voltage 0.85 V R0 max slope resistance * 3.4 mΩ IXYS reserves the right to change limits, conditions and dimensions. © 2019 IXYS all rights reserved Quantity 10 Data according to IEC 60747and per semiconductor unless otherwise specified 20191210c MCO75-12io1 Outlines SOT-227B (minibloc) 3 1/4 2 IXYS reserves the right to change limits, conditions and dimensions. © 2019 IXYS all rights reserved Data according to IEC 60747and per semiconductor unless otherwise specified 20191210c MCO75-12io1 Thyristor 160 900 6000 50 Hz, 80% VRRM 140 VR = 0 V 5000 800 120 4000 100 IT 700 It TVJ = 45°C ITSM 80 3000 2 600 [A] 60 [A s] [A] 40 125°C 150°C 20 TVJ = 45°C 2 TVJ = 125°C 2000 500 1000 TVJ = 125°C TVJ = 25°C 0 0,5 400 1,0 1,5 0 2,0 0,01 0,1 1 VT [V] t [ms] 1000 140 2 3 6 100 100 4 typ. tgd 1 IT(AV)M Limit 80 [A] 60 [µs] [V] 10 40 TVJ = 125°C 4: PGAV = 0.5 W 5: PGM = 5 W 6: PGM = 10 W IGD, TVJ = 125°C 0,1 10 dc = 1 0.5 0.4 0.33 0.17 0.08 120 5 1 4 5 6 7 8 910 Fig. 3 I t versus time (1-10 ms) 2: IGT, TVJ = 25°C 3: IGT, TVJ = -40°C 1 3 2 Fig. 2 Surge overload current 1: IGD, TVJ = 125°C VG 2 t [s] Fig. 1 Forward characteristics 10 1 100 1000 20 1 10 10000 0 100 1000 0 25 IG [mA] IG [mA] Fig. 4 Gate trigger characteristics 75 100 125 150 TC [°C] Fig. 5 Gate controlled delay time 160 50 Fig. 6 Max. forward current at case temperature 0,5 dc = 1 0.5 0.4 0.33 0.17 0.08 120 P(AV) RthHA 0.2 0.4 0.6 0.8 1.0 2.0 80 0,4 0,3 ZthJC [W] 0,2 [K/W] 40 0,1 0 0,0 0 20 40 60 80 100 IT(AV) [A] 50 100 150 Tamb [°C] © 2019 IXYS all rights reserved 10 100 ti [s] 0.030 0.011 0.035 0.002 0.065 0.108 0.027 0.480 0.212 0.170 1000 10000 t [ms] Fig. 7a Power dissipation versus direct output current Fig. 7b and ambient temperature IXYS reserves the right to change limits, conditions and dimensions. 1 Rthi [K/W] Fig. 8 Transient thermal impedance junction to case Data according to IEC 60747and per semiconductor unless otherwise specified 20191210c