MDD142-12N1

MDD142-12N1 Standard Rectifier Module VRRM = 2x 1200 V I FAV = 165 A VF = 1.05 V Phase leg Part number MDD142-12N1 Backside: isolated 2 1 3 Features / Advantages: Applications: Package: Y4 ● Package with DCB ceramic ● Improved temperature and power cycling ● Planar passivated chips ● Very low forward voltage drop ● Very low leakage current ● Diode for main rectification ● For single and three phase bridge configurations ● Supplies for DC power equipment ● Input rectifiers for PWM inverter ● Battery DC power supplies ● Field supply for DC motors ● Isolation Voltage: 3600 V~ ● Industry standard outline ● RoHS compliant ● Soldering pins for PCB mounting ● Base plate: DCB ceramic ● Reduced weight ● Advanced power cycling Disclaimer Notice Information furnished is believed to be accurate and reliable. However, users should independently evaluate the suitability of and test each product selected for their own applications. Littelfuse products are not designed for, and may not be used in, all applications. Read complete Disclaimer Notice at www.littelfuse.com/disclaimer-electronics. IXYS reserves the right to change limits, conditions and dimensions. © 2019 IXYS all rights reserved Data according to IEC 60747and per semiconductor unless otherwise specified 20191204d MDD142-12N1 Ratings Rectifier Conditions Symbol VRSM Definition max. non-repetitive reverse blocking voltage TVJ = 25°C VRRM max. repetitive reverse blocking voltage TVJ = 25°C IR reverse current VF forward voltage drop min. typ. TVJ = 25°C 1 mA TVJ = 150°C 20 mA I F = 150 A TVJ = 25°C 1.12 V 1.30 V 1.05 V TVJ = 125 °C I F = 300 A I FAV average forward current TC = 100 °C I F(RMS) RMS forward current 180° sine VF0 threshold voltage rF slope resistance R thJC thermal resistance junction to case for power loss calculation only thermal resistance case to heatsink total power dissipation I FSM max. forward surge current I²t CJ value for fusing junction capacitance IXYS reserves the right to change limits, conditions and dimensions. © 2019 IXYS all rights reserved V VR = 1200 V I F = 150 A R thCH 1200 VR = 1200 V I F = 300 A Ptot max. Unit 1300 V 1.26 V T VJ = 150 °C 165 A 300 A TVJ = 150 °C 0.80 V 1.3 mΩ 0.21 K/W K/W 0.08 TC = 25°C 600 W t = 10 ms; (50 Hz), sine TVJ = 45°C 4.70 kA t = 8,3 ms; (60 Hz), sine VR = 0 V 5.08 kA t = 10 ms; (50 Hz), sine TVJ = 150 °C 4.00 kA t = 8,3 ms; (60 Hz), sine VR = 0 V 4.32 kA t = 10 ms; (50 Hz), sine TVJ = 45°C 110.5 kA²s t = 8,3 ms; (60 Hz), sine VR = 0 V 107.1 kA²s t = 10 ms; (50 Hz), sine TVJ = 150 °C t = 8,3 ms; (60 Hz), sine VR = 0 V VR = 400 V; f = 1 MHz TVJ = 25°C 79.8 kA²s 77.5 kA²s 238 Data according to IEC 60747and per semiconductor unless otherwise specified pF 20191204d MDD142-12N1 Package Ratings Y4 Symbol I RMS Definition Conditions RMS current per terminal min. TVJ virtual junction temperature T op operation temperature Tstg storage temperature -40 max. 300 Unit A -40 150 °C -40 125 °C 125 °C 150 Weight MD mounting torque MT terminal torque d Spp/App creepage distance on surface | striking distance through air d Spb/Apb VISOL typ. 14.0 16.0 t = 1 second isolation voltage t = 1 minute Date Code (DC) + Production Index (PI) terminal to terminal terminal to backside 50/60 Hz, RMS; IISOL ≤ 1 mA g 2.25 2.75 Nm 4.5 5.5 Nm 10.0 mm 16.0 mm 3600 V 3000 V Circuit yywwAA Part Number Lot.No: xxxxxx Data Matrix: part no. (1-19), DC + PI (20-25), lot.no.# (26-31), blank (32), serial no.# (33-36) Ordering Standard Ordering Number MDD142-12N1 Equivalent Circuits for Simulation I V0 R0 Marking on Product MDD142-12N1 * on die level Delivery Mode Box Code No. 430668 T VJ = 150°C Rectifier V 0 max threshold voltage 0.8 V R0 max slope resistance * 0.7 mΩ IXYS reserves the right to change limits, conditions and dimensions. © 2019 IXYS all rights reserved Quantity 6 Data according to IEC 60747and per semiconductor unless otherwise specified 20191204d MDD142-12N1 Outlines Y4 2 IXYS reserves the right to change limits, conditions and dimensions. © 2019 IXYS all rights reserved 1 3 Data according to IEC 60747and per semiconductor unless otherwise specified 20191204d MDD142-12N1 Rectifier 6000 106 400 VR = 0 V 50 Hz, 80%VRRM DC 180° sin. 120° rect. 60° rect. 30° rect. 5000 300 4000 IFSM IFAVM I2dt TVJ = 45°C 3000 105 [s] 200 TVJ = 45°C [A] [A2s] 2000 TVJ = 150°C TVJ = 150°C 100 1000 0 10-3 104 10-2 100 10-1 1 101 t [s] Fig. 1 Surge overload current IFSM: Crest value, t: duration 4 2 6 8 10 t [s] Fig. 2 •II2dt versus time (1-10 ms) 0 0 50 100 150 200 TC [°C] Fig. 2a Maximum forward current at case temperature 400 RthJA [K/W] 0.4 0.5 300 0.6 0.8 PT 1.0 200 1.2 [W] 1.5 DC 180° sin. 120° rect. 60° rect. 30° rect. 100 0 0 50 100 150 200 250 2.0 300 0 50 100 150 200 TA [°C] TFAVM [A] Fig. 3 Power dissipation vs. forward current and ambient temperature (per diode) 1200 RthJA [K/W] 0.06 1000 R 0.08 L 0.10 800 0.15 PT 0.20 600 0.30 [W] 0.40 400 0.50 Circuit B2 2x MDD142 200 R = resistive load L = inductive load 0 0 100 200 300 400 TDAVM [A] 0 50 100 150 200 TA [°C] Fig. 4 Single phase rectifier bridge: Power dissipation vs. direct output current and ambient IXYS reserves the right to change limits, conditions and dimensions. © 2019 IXYS all rights reserved Data according to IEC 60747and per semiconductor unless otherwise specified 20191204d MDD142-12N1 Rectifier 2000 RthKA [K/W] 0.03 0.06 1500 0.08 0.12 Ptot 0.15 1000 0.02 [W] 0.30 Circuit B6 2x MDD142 500 0.50 0 0 100 200 300 400 500 0 50 100 TFAVM [A] 150 200 TA [°C] Fig. 5 Three phase rectifier bridge: Power dissipation vs. direct output current and ambient temperature 0.3 RthJC for various conduction angles d: 30° 60° 0.25 d DC 180° 120° 60° 30° 120° 180° 0.2 DC ZthJC 0.15 RthJC [K/W] 0.210 0.223 0.233 0.260 0.295 [K/W] Constants for ZthJC calculation: 0.1 i 1 2 3 0.05 0 10-3 10-2 10-1 100 101 102 Rthi [K/W] 0.0087 0.0163 0.1850 ti [s] 0.001 0.065 0.400 103 t [s] Fig. 6 Transient thermal impedance junction to case (per diode) 0.4 RthJK for various conduction angles d: 30° d DC 180° 120° 60° 30° 60° 120° 0.3 180° DC ZthJK 0.2 [K/W] RthJK [K/W] 0.310 0.323 0.333 0.360 0.395 Constants for ZthJK calculation: i 1 2 3 4 0.1 0 10-3 10-2 10-1 100 101 102 103 Rthi [K/W] 0.0087 0.0163 0.1850 0.1000 ti [s] 0.001 0.065 0.400 1.290 104 t [s] Fig. 7 Transient thermal impedance junction to heatsink (per diode) IXYS reserves the right to change limits, conditions and dimensions. © 2019 IXYS all rights reserved Data according to IEC 60747and per semiconductor unless otherwise specified 20191204d