MDD172-08N1

MDD 172 IFRMS = 2x 300 A IFAVM = 2x 190 A VRRM = 800-1800 V High Power Diode Modules VRSM 3 VRRM Type 800 1200 1400 1600 1800 MDD 172-08N1 MDD 172-12N1 MDD 172-14N1 MDD 172-16N1 MDD 172-18N1 1 2 2 3 1 VV 900 1300 1500 1700 1900 Symbol IFRMS IFAVM Test Conditions TVJ = TVJM TC = 100°C; 180° sine IFSM TVJ = 45°C; VR = 0 TVJ = TVJM VR = 0 t = 10 ms t = 8.3 ms t = 10 ms t = 8.3 ms (50 Hz), sine (60 Hz), sine (50 Hz), sine (60 Hz), sine 6600 7290 5600 6200 TVJ = 45°C VR = 0 TVJ = TVJM VR = 0 t = 10 ms t = 8.3 ms t = 10 ms t = 8.3 ms (50 Hz), sine (60 Hz), sine (50 Hz), sine (60 Hz), sine 218 000 221 000 157 000 160 000 A2s A2s A2s A2s -40...+150 150 -40...+125 °C °C °C 3000 3600 V~ V~ òi2dt Maximum Ratings 300 A 190 A Md 50/60 Hz, RMS IISOL £ 1 mA ● ● ● ● ● Applications Supplies for DC power equipment DC supply for PWM inverter Field supply for DC motors Battery DC power supplies ● ● ● ● TVJ TVJM Tstg VISOL A A A A Features International standard package Direct copper bonded Al2O3 -ceramic base plate Planar passivated chips Isolation voltage 3600 V~ UL registered, E 72873 t = 1 min t=1s Weight Mounting torque (M6) Terminal connection torque (M6) Typical including screws Symbol IR Test Conditions TVJ = TVJM; VR = VRRM VF IF = 300 A; TVJ = 25°C VT0 rT 2.25-2.75/20-25 Nm/lb.in. 4.5-5.5/40-48 Nm/lb.in. 120 g Advantages Space and weight savings Simple mounting Improved temperature and power cycling Reduced protection circuits ● ● ● ● Dimensions in mm (1 mm = 0.0394") Characteristic Values 20 mA 1.15 V For power-loss calculations only TVJ = TVJM 0.8 0.8 V mW QS IRM TVJ = 125°C; IF = 300 A, -di/dt = 50 A/ms 550 235 mC A RthJC per diode; DC current per module per diode; DC current per module RthJK dS dA a other values see Fig. 6/7 Creepage distance on surface Strike distance through air Maximum allowable acceleration 0.21 0.105 0.31 0.155 K/W K/W K/W K/W 12.7 9.6 50 mm mm m/s2 Data according to IEC 60747 and refer to a single diode unless otherwise stated. IXYS reserves the right to change limits, test conditions and dimensions © 2000 IXYS All rights reserved 1-3 MDD 172 Fig. 1 Surge overload current IFSM: Crest value, t: duration Fig. 2 òi2dt versus time (1-10 ms) Fig. 2a Maximum forward current at case temperature Fig. 3 Power dissipation versus forward current and ambient temperature (per diode) Fig. 4 Single phase rectifier bridge: Power dissipation versus direct output current and ambient temperature R = resistive load L = inductive load © 2000 IXYS All rights reserved 2-3 MDD 172 Fig. 5 Three phase rectifier bridge: Power dissipation versus direct output current and ambient temperature Fig. 6 Transient thermal impedance junction to case (per diode) RthJC for various conduction angles d: d DC 180° 120° 60° 30° RthJC (K/W) 0.210 0.223 0.233 0.260 0.295 Constants for ZthJC calculation: i 1 2 3 Rthi (K/W) ti (s) 0.0087 0.0163 0.185 0.001 0.065 0.4 Fig. 7 Transient thermal impedance junction to heatsink (per diode) RthJK for various conduction angles d: d DC 180° 120° 60° 30° RthJK (K/W) 0.31 0.323 0.333 0.360 0.395 Constants for ZthJK calculation: i 1 2 3 4 © 2000 IXYS All rights reserved Rthi (K/W) ti (s) 0.0087 0.0163 0.185 0.1 0.001 0.065 0.4 1.29 3-3