MDD175-28N1

MDD175-28N1 High Voltage Standard Rectifier Module VRRM = 2x 2800 V I FAV = 240 A VF = 1.01 V Phase leg Part number MDD175-28N1 Backside: isolated 2 1 3 Features / Advantages: Applications: Package: Y1 ● Planar passivated chips ● Very low leakage current ● Very low forward voltage drop ● Improved thermal behaviour ● Diode for main rectification ● For single and three phase bridge configurations ● Supplies for DC power equipment ● Input rectifiers for PWM inverter ● Battery DC power supplies ● Field supply for DC motors ● Isolation Voltage: 4800 V~ ● Industry standard outline ● RoHS compliant ● Base plate: Copper internally DCB isolated ● Advanced power cycling Disclaimer Notice Information furnished is believed to be accurate and reliable. However, users should independently evaluate the suitability of and test each product selected for their own applications. Littelfuse products are not designed for, and may not be used in, all applications. Read complete Disclaimer Notice at www.littelfuse.com/disclaimer-electronics. IXYS reserves the right to change limits, conditions and dimensions. © 2019 IXYS all rights reserved Data according to IEC 60747and per semiconductor unless otherwise specified 20191204i MDD175-28N1 Ratings Rectifier Conditions Symbol VRSM Definition max. non-repetitive reverse blocking voltage TVJ = 25°C VRRM max. repetitive reverse blocking voltage TVJ = 25°C 2800 V IR reverse current VF forward voltage drop min. typ. VR = 2800 V TVJ = 25°C 1 mA VR = 2800 V TVJ = 150°C 5 mA I F = 200 A TVJ = 25°C 1.07 V 1.26 V 1.01 V I F = 400 A TVJ = 125 °C I F = 200 A I F = 400 A I FAV average forward current VF0 threshold voltage rF slope resistance R thJC thermal resistance junction to case TC = 100 °C 180° sine R thCH thermal resistance case to heatsink total power dissipation I FSM max. forward surge current I²t CJ value for fusing junction capacitance IXYS reserves the right to change limits, conditions and dimensions. © 2019 IXYS all rights reserved 1.26 V T VJ = 150 °C 240 A TVJ = 150 °C 0.74 V 1.27 mΩ d = 0.5 for power loss calculation only Ptot max. Unit 2900 V 0.14 K/W K/W 0.04 TC = 25°C 900 W t = 10 ms; (50 Hz), sine TVJ = 45°C 8.50 kA t = 8,3 ms; (60 Hz), sine VR = 0 V 9.18 kA t = 10 ms; (50 Hz), sine TVJ = 150 °C 7.23 kA t = 8,3 ms; (60 Hz), sine VR = 0 V 7.81 kA t = 10 ms; (50 Hz), sine TVJ = 45°C 361.3 kA²s t = 8,3 ms; (60 Hz), sine VR = 0 V 350.6 kA²s t = 10 ms; (50 Hz), sine TVJ = 150 °C 261.0 kA²s t = 8,3 ms; (60 Hz), sine VR = 0 V VR = 1100 V; f = 1 MHz TVJ = 25°C 253.4 kA²s 182 Data according to IEC 60747and per semiconductor unless otherwise specified pF 20191204i MDD175-28N1 Package Ratings Y1 Symbol I RMS Definition Conditions RMS current per terminal min. TVJ virtual junction temperature T op operation temperature Tstg storage temperature -40 typ. max. 600 Unit A -40 150 °C -40 125 °C 125 °C 680 Weight g MD mounting torque 4.5 7 Nm MT terminal torque 11 13 Nm d Spp/App terminal to terminal creepage distance on surface | striking distance through air terminal to backside d Spb/Apb VISOL t = 1 second isolation voltage t = 1 minute Production Index (PI) Date Code (DC) 50/60 Hz, RMS; IISOL ≤ 1 mA 16.0 mm 16.0 mm 4800 V 4000 V Circuit yywwAA Part Number Lot.No: xxxxxx Data Matrix: part no. (1-19), DC + PI (20-25), lot.no.# (26-31), blank (32), serial no.# (33-36) Ordering Standard Ordering Number MDD175-28N1 Equivalent Circuits for Simulation I V0 R0 Marking on Product MDD175-28N1 * on die level Delivery Mode Box Code No. 504295 T VJ = 150°C Rectifier V 0 max threshold voltage 0.74 V R0 max slope resistance * 0.75 mΩ IXYS reserves the right to change limits, conditions and dimensions. © 2019 IXYS all rights reserved Quantity 3 Data according to IEC 60747and per semiconductor unless otherwise specified 20191204i MDD175-28N1 Outlines Y1 43 10 32 +0 -1,9 52 +0 -1,4 49 2 15 ±1 3x M8 35 28.5 1 2 38 50 22.5 45 67 18 20 3 6.2 80 92 115 2 IXYS reserves the right to change limits, conditions and dimensions. © 2019 IXYS all rights reserved 1 3 Data according to IEC 60747and per semiconductor unless otherwise specified 20191204i MDD175-28N1 Rectifier 600 7000 106 50 Hz, 80%VRRM VR = 0 V 500 6000 TVJ = 45°C TVJ = 45°C 400 IF IFSM 300 I2t [A] TVJ = 150°C 105 5000 [A] 2 [A s] 200 4000 TVJ = 150°C TVJ = 25°C TVJ = 125°C TVJ = 150°C 100 0 0.5 1.0 104 3000 0.001 1.5 0.01 VF [V] 0.1 1 1 2 t [s] 4 5 6 7 8 910 2 Fig. 2 Surge overload current Fig. 1 Forward current versus voltage drop per diode 3 t [ms] Fig. 3 I t versus time per diode 700 400 600 DC = 1 0.5 0.4 0.33 0.17 0.08 300 Ptot 200 RthHA = 0.1K/W 0.2 K/W 0.4 K/W 0.6 K/W 0.8 K/W 1.0 K/W DC = 1 0.5 0.4 0.33 0.17 0.08 500 IF(AV)M 400 [A] 300 [W] 200 100 100 0 0 0 100 200 300 0 50 IF(AV)M [A] 100 150 0 50 100 150 TC [°C] Tamb [°C] Fig. 4 Power dissipation vs. direct output current and ambient temperature Fig. 5 Max. forward current vs. case temperature 0.16 0.12 Constants for ZthJC calculation: ZthJC 0.08 [K/W] 0.04 i Rthi (K/W) ti (s) 1 0.155 0.0005 2 0.332 0.0095 3 0.713 0.17 4 0.3 5 0.00001 0.8 0.00001 0.00 1 10 100 1000 10000 t [ms] Fig. 6 Transient thermal impedance junction to case IXYS reserves the right to change limits, conditions and dimensions. © 2019 IXYS all rights reserved Data according to IEC 60747and per semiconductor unless otherwise specified 20191204i