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MDD200-14N1

MDD200-14N1

  • 厂商:

    IXYS(艾赛斯)

  • 封装:

    Y4-M6

  • 描述:

    DIODE MODULE 1.4KV 224A Y4-M6

  • 数据手册
  • 价格&库存
MDD200-14N1 数据手册
MDD200-14N1 Standard Rectifier Module VRRM = 2x 1400 V I FAV = 224 A VF = 1.07 V Phase leg Part number MDD200-14N1 Backside: isolated 2 1 3 Features / Advantages: Applications: Package: Y4 ● Package with DCB ceramic ● Improved temperature and power cycling ● Planar passivated chips ● Very low forward voltage drop ● Very low leakage current ● Diode for main rectification ● For single and three phase bridge configurations ● Supplies for DC power equipment ● Input rectifiers for PWM inverter ● Battery DC power supplies ● Field supply for DC motors ● Isolation Voltage: 3600 V~ ● Industry standard outline ● RoHS compliant ● Height: 30 mm ● Base plate: DCB ceramic ● Reduced weight ● Advanced power cycling Disclaimer Notice Information furnished is believed to be accurate and reliable. However, users should independently evaluate the suitability of and test each product selected for their own applications. Littelfuse products are not designed for, and may not be used in, all applications. Read complete Disclaimer Notice at www.littelfuse.com/disclaimer-electronics. IXYS reserves the right to change limits, conditions and dimensions. © 2019 IXYS all rights reserved Data according to IEC 60747and per semiconductor unless otherwise specified 20191204d MDD200-14N1 Ratings Rectifier Conditions Symbol VRSM Definition max. non-repetitive reverse blocking voltage TVJ = 25°C VRRM max. repetitive reverse blocking voltage TVJ = 25°C IR reverse current VF forward voltage drop min. typ. TVJ = 25°C 1 mA TVJ = 150°C 20 mA I F = 300 A TVJ = 25°C 1.16 V 1.39 V 1.07 V TVJ = 125 °C I F = 600 A I FAV average forward current TC = 100 °C I F(RMS) RMS forward current 180° sine VF0 threshold voltage rF slope resistance R thJC thermal resistance junction to case total power dissipation I FSM max. forward surge current I²t CJ value for fusing junction capacitance IXYS reserves the right to change limits, conditions and dimensions. © 2019 IXYS all rights reserved 1.36 V T VJ = 150 °C 224 A 350 A TVJ = 150 °C 0.80 V 0.6 mΩ d = 0.5 for power loss calculation only thermal resistance case to heatsink V VR = 1400 V I F = 300 A R thCH 1400 VR = 1400 V I F = 600 A Ptot max. Unit 1500 V 0.13 K/W K/W 0.08 TC = 25°C 960 W t = 10 ms; (50 Hz), sine TVJ = 45°C 10.5 kA t = 8,3 ms; (60 Hz), sine VR = 0 V 11.3 kA t = 10 ms; (50 Hz), sine TVJ = 150 °C 8.93 kA t = 8,3 ms; (60 Hz), sine VR = 0 V 9.64 kA t = 10 ms; (50 Hz), sine TVJ = 45°C 551.3 kA²s t = 8,3 ms; (60 Hz), sine VR = 0 V 535.0 kA²s t = 10 ms; (50 Hz), sine TVJ = 150 °C 398.3 kA²s t = 8,3 ms; (60 Hz), sine VR = 0 V VR = 1100 V; f = 1 MHz TVJ = 25°C 386.6 kA²s 230 Data according to IEC 60747and per semiconductor unless otherwise specified pF 20191204d MDD200-14N1 Package Ratings Y4 Symbol I RMS Definition Conditions RMS current per terminal min. TVJ virtual junction temperature T op operation temperature Tstg storage temperature -40 max. 300 Unit A -40 150 °C -40 125 °C 125 °C 150 Weight MD mounting torque MT terminal torque d Spp/App creepage distance on surface | striking distance through air d Spb/Apb VISOL typ. 14.0 16.0 t = 1 second isolation voltage t = 1 minute Date Code (DC) + Production Index (PI) terminal to terminal terminal to backside 50/60 Hz, RMS; IISOL ≤ 1 mA g 2.25 2.75 Nm 4.5 5.5 Nm 10.0 mm 16.0 mm 3600 V 3000 V Circuit yywwAA Part Number Lot.No: xxxxxx Data Matrix: part no. (1-19), DC + PI (20-25), lot.no.# (26-31), blank (32), serial no.# (33-36) Ordering Standard Ordering Number MDD200-14N1 Equivalent Circuits for Simulation I V0 R0 Marking on Product MDD200-14N1 * on die level Delivery Mode Box Code No. 500215 T VJ = 150°C Rectifier V 0 max threshold voltage 0.8 V R0 max slope resistance * 0.4 mΩ IXYS reserves the right to change limits, conditions and dimensions. © 2019 IXYS all rights reserved Quantity 6 Data according to IEC 60747and per semiconductor unless otherwise specified 20191204d MDD200-14N1 Outlines Y4 2 IXYS reserves the right to change limits, conditions and dimensions. © 2019 IXYS all rights reserved 1 3 Data according to IEC 60747and per semiconductor unless otherwise specified 20191204d MDD200-14N1 Rectifier 600 106 10000 500 50 Hz 80 % VRRM TVJ = 45°C TVJ = 125°C 8000 IFSM 400 6000 IF 300 2 It [A] [A] VR = 0 V TVJ = 45°C 2 [A s] 4000 TVJ = 125°C 200 100 2000 TVJ = 125°C TVJ = 25°C 0 0,0 0,5 1,0 1,5 0 0,001 2,0 VF [V] 0,01 105 s 0,1 1 1 t [ms] 2 Fig. 3 I t versus time (1-10 ms) t [s] Fig. 2 Surge overload current IFSM: Crest value, t: duration Fig. 1 Forward current versus voltage drop 10 400 400 DC 180 ° sin 120 ° 60 ° 30 ° R thKA K/W 0.1 0.2 0.3 0.5 0.8 1.2 2.0 300 Ptot 300 IFAVM 200 200 [A] [W] DC 180 ° sin 120 ° 60 ° 30 ° 100 100 0 0 0 100 200 300 0 25 50 IFAVM [A] 75 100 125 150 0 25 50 TA [°C] 75 100 125 150 TC [°C] Fig. 5 Maximum forward current at case temperature Fig.4 Power dissipation versus forward current and ambient temperature (per diode) 1600 2000 TC = 85°C TVJ = 150°C R thKA K/W 0.02 0.04 0.07 0.10 0.15 0.20 0.30 1200 Ptot Circuit B6 800 1600 1200 IFRMS 800 [W] [A] 400 400 0 0 200 400 600 0 IdAVM [A] 25 50 75 100 TA [°C] Fig.6 Three phase rectifier bridge: Power dissipation versus direct output current and ambient temperature IXYS reserves the right to change limits, conditions and dimensions. © 2019 IXYS all rights reserved 125 150 0 0,001 0,01 0,1 1 10 t [s] Fig. 7 Rated RMS current versus time (360° conduction) Data according to IEC 60747and per semiconductor unless otherwise specified 20191204d MDD200-14N1 Rectifier 0.12 Constants for ZthJC calculation: ZthJC 0.08 [K/W] 0.04 0.00 0.001 0.01 0.1 1 i Rthi [K/W] ti [s] 1 0.0100 0.00014 2 0.0065 0.019 3 0.0250 0.180 4 0.0615 0.520 5 0.0270 1.600 10 t [s] Fig. 8 Transient thermal impedance junction to case IXYS reserves the right to change limits, conditions and dimensions. © 2019 IXYS all rights reserved Data according to IEC 60747and per semiconductor unless otherwise specified 20191204d
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