MDD200-16N1
Standard Rectifier Module
VRRM
= 2x 1600 V
I FAV
=
224 A
VF
=
1.07 V
Phase leg
Part number
MDD200-16N1
Backside: isolated
2
1
3
Features / Advantages:
Applications:
Package: Y4
● Package with DCB ceramic
● Improved temperature and power cycling
● Planar passivated chips
● Very low forward voltage drop
● Very low leakage current
● Diode for main rectification
● For single and three phase
bridge configurations
● Supplies for DC power equipment
● Input rectifiers for PWM inverter
● Battery DC power supplies
● Field supply for DC motors
● Isolation Voltage: 3600 V~
● Industry standard outline
● RoHS compliant
● Height: 30 mm
● Base plate: DCB ceramic
● Reduced weight
● Advanced power cycling
Disclaimer Notice
Information furnished is believed to be accurate and reliable. However, users should independently
evaluate the suitability of and test each product selected for their own applications. Littelfuse products are not designed for,
and may not be used in, all applications. Read complete Disclaimer Notice at www.littelfuse.com/disclaimer-electronics.
IXYS reserves the right to change limits, conditions and dimensions.
© 2019 IXYS all rights reserved
Data according to IEC 60747and per semiconductor unless otherwise specified
20191204d
MDD200-16N1
Ratings
Rectifier
Conditions
Symbol
VRSM
Definition
max. non-repetitive reverse blocking voltage
TVJ = 25°C
VRRM
max. repetitive reverse blocking voltage
TVJ = 25°C
IR
reverse current
VF
forward voltage drop
min.
typ.
TVJ = 25°C
1
mA
TVJ = 150°C
20
mA
I F = 300 A
TVJ = 25°C
1.16
V
1.39
V
1.07
V
TVJ = 125 °C
I F = 600 A
I FAV
average forward current
TC = 100 °C
I F(RMS)
RMS forward current
180° sine
VF0
threshold voltage
rF
slope resistance
R thJC
thermal resistance junction to case
total power dissipation
I FSM
max. forward surge current
I²t
CJ
value for fusing
junction capacitance
IXYS reserves the right to change limits, conditions and dimensions.
© 2019 IXYS all rights reserved
1.36
V
T VJ = 150 °C
224
A
350
A
TVJ = 150 °C
0.80
V
0.6
mΩ
d = 0.5
for power loss calculation only
thermal resistance case to heatsink
V
VR = 1600 V
I F = 300 A
R thCH
1600
VR = 1600 V
I F = 600 A
Ptot
max. Unit
1700
V
0.13 K/W
K/W
0.08
TC = 25°C
960
W
t = 10 ms; (50 Hz), sine
TVJ = 45°C
10.5
kA
t = 8,3 ms; (60 Hz), sine
VR = 0 V
11.3
kA
t = 10 ms; (50 Hz), sine
TVJ = 150 °C
8.93
kA
t = 8,3 ms; (60 Hz), sine
VR = 0 V
9.64
kA
t = 10 ms; (50 Hz), sine
TVJ = 45°C
551.3 kA²s
t = 8,3 ms; (60 Hz), sine
VR = 0 V
535.0 kA²s
t = 10 ms; (50 Hz), sine
TVJ = 150 °C
398.3 kA²s
t = 8,3 ms; (60 Hz), sine
VR = 0 V
VR = 1100 V; f = 1 MHz
TVJ = 25°C
386.6 kA²s
230
Data according to IEC 60747and per semiconductor unless otherwise specified
pF
20191204d
MDD200-16N1
Package
Ratings
Y4
Symbol
I RMS
Definition
Conditions
RMS current
per terminal
min.
TVJ
virtual junction temperature
T op
operation temperature
Tstg
storage temperature
-40
max.
300
Unit
A
-40
150
°C
-40
125
°C
125
°C
150
Weight
MD
mounting torque
MT
terminal torque
d Spp/App
creepage distance on surface | striking distance through air
d Spb/Apb
VISOL
typ.
14.0
16.0
t = 1 second
isolation voltage
t = 1 minute
Date Code (DC)
+
Production
Index (PI)
terminal to terminal
terminal to backside
50/60 Hz, RMS; IISOL ≤ 1 mA
g
2.25
2.75
Nm
4.5
5.5
Nm
10.0
mm
16.0
mm
3600
V
3000
V
Circuit
yywwAA
Part Number
Lot.No: xxxxxx
Data Matrix: part no. (1-19), DC + PI (20-25), lot.no.# (26-31),
blank (32), serial no.# (33-36)
Ordering
Standard
Ordering Number
MDD200-16N1
Equivalent Circuits for Simulation
I
V0
R0
Marking on Product
MDD200-16N1
* on die level
Delivery Mode
Box
Code No.
500212
T VJ = 150°C
Rectifier
V 0 max
threshold voltage
0.8
V
R0 max
slope resistance *
0.4
mΩ
IXYS reserves the right to change limits, conditions and dimensions.
© 2019 IXYS all rights reserved
Quantity
6
Data according to IEC 60747and per semiconductor unless otherwise specified
20191204d
MDD200-16N1
Outlines Y4
2
IXYS reserves the right to change limits, conditions and dimensions.
© 2019 IXYS all rights reserved
1
3
Data according to IEC 60747and per semiconductor unless otherwise specified
20191204d
MDD200-16N1
Rectifier
600
106
10000
500
50 Hz
80 % VRRM
TVJ = 45°C
TVJ = 125°C
8000
IFSM
400
6000
IF
300
2
It
[A]
[A]
VR = 0 V
TVJ = 45°C
2
[A s]
4000
TVJ = 125°C
200
100
2000
TVJ = 125°C
TVJ = 25°C
0
0,0
0,5
1,0
1,5
0
0,001
2,0
VF [V]
0,01
105
s
0,1
1
1
t [ms]
2
Fig. 3 I t versus time (1-10 ms)
t [s]
Fig. 2 Surge overload current
IFSM: Crest value, t: duration
Fig. 1 Forward current versus
voltage drop
10
400
400
DC
180 ° sin
120 °
60 °
30 °
R thKA K/W
0.1
0.2
0.3
0.5
0.8
1.2
2.0
300
Ptot
300
IFAVM
200
200
[A]
[W]
DC
180 ° sin
120 °
60 °
30 °
100
100
0
0
0
100
200
300
0
25
50
IFAVM [A]
75
100
125
150
0
25
50
TA [°C]
75
100 125 150
TC [°C]
Fig. 5 Maximum forward current
at case temperature
Fig.4 Power dissipation versus forward current
and ambient temperature (per diode)
1600
2000
TC = 85°C
TVJ = 150°C
R thKA K/W
0.02
0.04
0.07
0.10
0.15
0.20
0.30
1200
Ptot
Circuit
B6
800
1600
1200
IFRMS
800
[W]
[A]
400
400
0
0
200
400
600
0
IdAVM [A]
25
50
75
100
TA [°C]
Fig.6 Three phase rectifier bridge: Power dissipation versus
direct output current and ambient temperature
IXYS reserves the right to change limits, conditions and dimensions.
© 2019 IXYS all rights reserved
125
150
0
0,001
0,01
0,1
1
10
t [s]
Fig. 7 Rated RMS current versus
time (360° conduction)
Data according to IEC 60747and per semiconductor unless otherwise specified
20191204d
MDD200-16N1
Rectifier
0.12
Constants for ZthJC calculation:
ZthJC
0.08
[K/W]
0.04
0.00
0.001
0.01
0.1
1
i
Rthi [K/W]
ti [s]
1
0.0100
0.00014
2
0.0065
0.019
3
0.0250
0.180
4
0.0615
0.520
5
0.0270
1.600
10
t [s]
Fig. 8 Transient thermal impedance junction to case
IXYS reserves the right to change limits, conditions and dimensions.
© 2019 IXYS all rights reserved
Data according to IEC 60747and per semiconductor unless otherwise specified
20191204d
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