MDD26-18N1B

MDD26-18N1B Standard Rectifier Module VRRM = 2x 1800 V I FAV = 36 A VF = 1.05 V Phase leg Part number MDD26-18N1B Backside: isolated 2 1 3 Features / Advantages: Applications: Package: TO-240AA ● Package with DCB ceramic ● Improved temperature and power cycling ● Planar passivated chips ● Very low forward voltage drop ● Very low leakage current ● Diode for main rectification ● For single and three phase bridge configurations ● Supplies for DC power equipment ● Input rectifiers for PWM inverter ● Battery DC power supplies ● Field supply for DC motors ● Isolation Voltage: 4800 V~ ● Industry standard outline ● RoHS compliant ● Height: 30 mm ● Base plate: DCB ceramic ● Reduced weight ● Advanced power cycling Disclaimer Notice Information furnished is believed to be accurate and reliable. However, users should independently evaluate the suitability of and test each product selected for their own applications. Littelfuse products are not designed for, and may not be used in, all applications. Read complete Disclaimer Notice at www.littelfuse.com/disclaimer-electronics. IXYS reserves the right to change limits, conditions and dimensions. © 2020 IXYS all rights reserved Data according to IEC 60747and per semiconductor unless otherwise specified 20200701d MDD26-18N1B Ratings Rectifier Conditions Symbol VRSM Definition max. non-repetitive reverse blocking voltage TVJ = 25°C VRRM max. repetitive reverse blocking voltage TVJ = 25°C 1800 IR reverse current VR = 1800 V TVJ = 25°C 100 µA VR = 1800 V TVJ = 150°C 1.5 mA TVJ = 25°C 1.13 V 1.38 V 1.05 V VF forward voltage drop IF = 40 A IF = 80 A IF = 40 A IF = 80 A I FAV average forward current TC = 100 °C I F(RMS) RMS forward current 180° sine VF0 threshold voltage rF slope resistance R thJC thermal resistance junction to case R thCH thermal resistance case to heatsink total power dissipation I FSM max. forward surge current I²t CJ value for fusing junction capacitance IXYS reserves the right to change limits, conditions and dimensions. © 2020 IXYS all rights reserved typ. TVJ = 125 °C for power loss calculation only Ptot min. max. Unit 1900 V V 1.27 V T VJ = 150 °C 36 A 60 A TVJ = 150 °C 0.80 V 6.1 mΩ 1 K/W K/W 0.2 TC = 25°C 125 W t = 10 ms; (50 Hz), sine TVJ = 45°C 650 A t = 8,3 ms; (60 Hz), sine VR = 0 V 700 A t = 10 ms; (50 Hz), sine TVJ = 150 °C 555 A t = 8,3 ms; (60 Hz), sine VR = 0 V 595 A t = 10 ms; (50 Hz), sine TVJ = 45°C 2.12 kA²s t = 8,3 ms; (60 Hz), sine VR = 0 V 2.04 kA²s t = 10 ms; (50 Hz), sine TVJ = 150 °C 1.54 kA²s t = 8,3 ms; (60 Hz), sine VR = 0 V VR = 400 V; f = 1 MHz TVJ = 25°C 1.48 kA²s 27 Data according to IEC 60747and per semiconductor unless otherwise specified pF 20200701d MDD26-18N1B Package Ratings TO-240AA Symbol I RMS Definition Conditions RMS current per terminal min. TVJ virtual junction temperature T op operation temperature Tstg storage temperature -40 typ. max. 200 Unit A -40 150 °C -40 125 °C 125 °C 76 Weight g MD mounting torque 2.5 4 Nm MT terminal torque 2.5 4 Nm d Spp/App creepage distance on surface | striking distance through air d Spb/Apb VISOL 13.0 16.0 t = 1 second isolation voltage t = 1 minute UL Logo Date Code + Location terminal to terminal terminal to backside 50/60 Hz, RMS; IISOL ≤ 1 mA 9.7 mm 16.0 mm 4800 V 4000 V Circuit yywwZ XXXXXXXX 2D Barcode 123456 Part Number Lot# Ordering Standard Ordering Number MDD26-18N1B Similar Part MDD26-08N1B MDD26-12N1B MDD26-14N1B MDD26-16N1B Equivalent Circuits for Simulation I V0 R0 Marking on Product MDD26-18N1B Package TO-240AA TO-240AA TO-240AA TO-240AA * on die level Delivery Mode Box Code No. 454389 Voltage class 800 1200 1400 1600 T VJ = 150°C Rectifier V 0 max threshold voltage 0.8 V R0 max slope resistance * 4.9 mΩ IXYS reserves the right to change limits, conditions and dimensions. © 2020 IXYS all rights reserved Quantity 36 Data according to IEC 60747and per semiconductor unless otherwise specified 20200701d MDD26-18N1B Outlines TO-240AA 2 IXYS reserves the right to change limits, conditions and dimensions. © 2020 IXYS all rights reserved 1 3 Data according to IEC 60747and per semiconductor unless otherwise specified 20200701d MDD26-18N1B Rectifier 60 104 800 VR = 0 V 50 HZ, 80% VRRM DC 180° sin 120° 60° 30° 50 600 40 IFSM I2t TVJ = 45°C 103 400 [A] IFAVM TVJ = 45°C 30 TVJ = 125°C [A] [A2s] TVJ = 125°C 20 200 10 102 0 10-3 10-2 10 -1 10 0 0 1 101 2 t [s] 3 6 8 10 t [ms] Fig. 1 Surge overload current ITSM: Crest value, t: duration 50 100 150 200 TC [°C] 2 Fig. 2 I t versus time (1-10 ms) 80 0 RthJA Fig. 3 Max. forward current at case temperature [KW] 1.5 2 60 2.5 3 PT 4 40 5 6 [W] DC 180° sin 120° 60° 30° 20 8 0 0 10 20 30 40 50 60 0 50 ITAVM [A] 100 150 200 TA [°C] Fig. 4 Power dissipation versus onstate current & ambient temperature (per diode) 250 RthJA [KW] 0.3 0.4 200 R L 0.5 Ptot 0.6 150 0.8 [W] 1.0 100 1.3 1.6 Circuit B2 2x MDD26 50 0 0 20 40 60 80 IdAVM [A] 0 50 100 150 TA [°C] Fig. 6 Single phase rectifier bridge: Power dissipation vs. direct output current and ambient temperature; R = resistive load, L = inductive load IXYS reserves the right to change limits, conditions and dimensions. © 2020 IXYS all rights reserved Data according to IEC 60747and per semiconductor unless otherwise specified 20200701d MDD26-18N1B Rectifier 400 RthJA [KW] 0.3 300 0.4 0.5 200 0.6 Ptot 0.7 150 0.8 [W] 1.0 100 1.5 Circuit B3 3x MDD26 50 0 0 20 40 60 80 100 0 50 IRMS [A] 100 150 200 TA [°C] Fig. 6 Three phase rectifier bridge: Power dissipation versus direct output current and ambient temperature 1.2 RthJC for various conduction angles d: d RthJC [K/W] 30° 1.0 60° DC 1.00 120° 180° 1.02 120° 1.04 60° 1.07 30° 1.10 180° 0.8 DC ZthJC 0.6 [K/W] Constants for ZthJC calculation: 0.4 i Rthi [K/W] 0.2 0 10-3 10 -2 10 -1 10 0 10 1 10 2 10 ti [s] 1 0.01 0.0012 2 0.03 0.0950 3 0.96 0.4550 3 t [s] Fig. 7 Transient thermal impedance junction to case (per diode) 1.5 RthJK for various conduction angles d: d RthJK [K/W] DC 1.20 180° 1.22 120° 1.24 60° 1.27 30° 1.30 30° 60° 120° 180° 1.0 DC ZthJK Constants for ZthJK calculation: [K/W] 0.5 i Rthi [K/W] 0 10-3 1 2 3 4 10-2 10-1 100 101 102 0.01 0.03 0.96 0.20 ti [s] 0.0012 0.0950 0.4550 0.4950 103 t [s] Fig. 8 Transient thermal impedance junction to heatsink (per thyristor) IXYS reserves the right to change limits, conditions and dimensions. © 2020 IXYS all rights reserved Data according to IEC 60747and per semiconductor unless otherwise specified 20200701d