MDD310-08N1

MDD 310 IFRMS = 2x 480 A IFAVM = 2x 305 A VRRM = 800-2200 V High Power Diode Modules 3 VRSM VRRM V V 900 1300 1500 1700 2100 2300 800 1200 1400 1600 2000 2200 3 Type 1 2 2 1 MDD 310-08N1 MDD 310-12N1 MDD 310-14N1 MDD 310-16N1 MDD 310-20N1 MDD 310-22N1 Symbol IFRMS IFAVM Test Conditions TVJ = TVJM TC = 100°C; 180° sine Maximum Ratings 480 A 305 A IFSM TVJ = 45°C; VR = 0 TVJ = TVJM VR = 0 t = 10 ms t = 8.3 ms t = 10 ms t = 8.3 ms (50 Hz), sine (60 Hz), sine (50 Hz), sine (60 Hz), sine 11 500 12 200 9 600 10 200 A A A A TVJ = 45°C VR = 0 TVJ = TVJM VR = 0 t = 10 ms t = 8.3 ms t = 10 ms t = 8.3 ms (50 Hz), sine (60 Hz), sine (50 Hz), sine (60 Hz), sine 662 000 620 000 460 000 430 000 A2s A2s A2s A2s -40...+150 150 -40...+125 °C °C °C 3000 3600 V~ V~ Features Direct copper bonded Al2O3 -ceramic base plate Planar passivated chips Isolation voltage 3600 V~ UL registered, E 72873 ● ● òi2dt Md 50/60 Hz, RMS IISOL £ 1 mA t = 1 min t=1s Weight Mounting torque (M5) Terminal connection torque (M8) Typical including screws Symbol IRRM Test Conditions TVJ = TVJM; VR = VRRM VF IF = 600 A; TVJ = 25°C VT0 rT For power-loss calculations only TVJ = TVJM RthJC per diode; DC current per module per diode; DC current per module RthJK ● Applications Supplies for DC power equipment DC supply for PWM inverter Field supply for DC motors Battery DC power supplies ● TVJ TVJM Tstg VISOL ● 2.5-5/22-44 Nm/lb.in. 12-15/106-132 Nm/lb.in. 320 g ● ● ● Advantages Space and weight savings Simple mounting Improved temperature and power cycling Reduced protection circuits ● ● ● ● Dimensions in mm (1 mm = 0.0394") Characteristic Values 40 mA other values see Fig. 6/7 1.2 V 0.75 0.63 V mW 0.129 0.065 0.169 0.0845 K/W K/W K/W K/W QS IRM TVJ = 125°C, IF = 400 A; -di/dt = 50 A/ms 760 275 mC A dS dA a Creepage distance on surface Strike distance through air Maximum allowable acceleration 12.7 9.6 50 mm mm m/s2 20 12 © 2000 IXYS All rights reserved Threaded spacer for higher Anode/Cathode construction: Type ZY 250, material brass 936 14 Data according to IEC 60747 and refer to a single diode unless otherwise stated. IXYS reserves the right to change limits, test conditions and dimensions 1-3 MDD 310 Fig. 1 Surge overload current IFSM: Crest value, t: duration Fig. 2 òi2dt versus time (1-10 ms) Fig. 2a Maximum forward current at case temperature Fig. 3 Power dissipation versus forward current and ambient temperature (per diode) Fig. 4 Single phase rectifier bridge: Power dissipation versus direct output current and ambient temperature R = resistive load L = inductive load © 2000 IXYS All rights reserved 2-3 MDD 310 Fig. 5 Three phase rectifier bridge: Power dissipation versus direct output current and ambient temperature 0.15 Fig. 6 Transient thermal impedance junction to case (per diode) 30° DC K/W RthJC for various conduction angles d: ZthJC d 0.10 DC 180° 120° 60° 30° 0.05 RthJC (K/W) 0.129 0.131 0.132 0.132 0.133 Constants for ZthJC calculation: i 0.000 10-3 10-2 10-1 100 101 102 s t 0.20 30° DC 0.0035 0.0165 0.1091 0.0099 0.168 0.456 RthJK for various conduction angles d: 0.15 d DC 180° 120° 60° 30° 0.10 RthJK (K/W) 0.169 0.171 0.172 0.172 0.173 Constants for ZthJK calculation: 0.05 i 0 0.00 10-3 ti (s) Fig. 7 Transient thermal impedance junction to heatsink (per diode) K/W ZthJK 1 2 3 Rthi (K/W) 10-2 10-1 100 101 s 102 ti (s) 0.0035 0.0165 0.1091 0.04 0.0099 0.168 0.456 1.36 838 t 1 2 3 4 Rthi (K/W) © 2000 IXYS All rights reserved 3-3