MDD312-14N1

MDD312-14N1 Standard Rectifier Module VRRM = 2x 1400 V I FAV = 310 A VF = 1,03 V Phase leg Part number MDD312-14N1 Backside: isolated 2 1 3 Features / Advantages: Applications: Package: Y1 ● Package with DCB ceramic ● Improved temperature and power cycling ● Planar passivated chips ● Very low forward voltage drop ● Very low leakage current ● Diode for main rectification ● For single and three phase bridge configurations ● Supplies for DC power equipment ● Input rectifiers for PWM inverter ● Battery DC power supplies ● Field supply for DC motors ● Isolation Voltage: 4800 V~ ● Industry standard outline ● RoHS compliant ● Base plate: Copper internally DCB isolated ● Advanced power cycling Disclaimer Notice Information furnished is believed to be accurate and reliable. However, users should independently evaluate the suitability of and test each product selected for their own applications. Littelfuse products are not designed for, and may not be used in, all applications. Read complete Disclaimer Notice at www.littelfuse.com/disclaimer-electronics. IXYS reserves the right to change limits, conditions and dimensions. © 2022 IXYS all rights reserved Data according to IEC 60747and per semiconductor unless otherwise specified 20220914k MDD312-14N1 Ratings Rectifier Conditions Symbol VRSM Definition max. non-repetitive reverse blocking voltage TVJ = 25°C VRRM max. repetitive reverse blocking voltage TVJ = 25°C 1400 IR reverse current VR = 1400 V TVJ = 25°C 500 µA VR = 1400 V TVJ = 150°C 30 mA I F = 300 A TVJ = 25°C 1,13 V 1,33 V 1,03 V VF forward voltage drop min. typ. I F = 600 A TVJ = 125 °C I F = 300 A I F = 600 A I FAV average forward current TC = 100°C I F(RMS) RMS forward current 180° sine VF0 threshold voltage rF slope resistance R thJC thermal resistance junction to case R thCH thermal resistance case to heatsink Ptot total power dissipation I FSM max. forward surge current I²t CJ value for fusing junction capacitance IXYS reserves the right to change limits, conditions and dimensions. © 2022 IXYS all rights reserved V 1,29 V T VJ = 150°C 310 A 520 A TVJ = 150°C 0,80 V 0,6 mΩ d = 0.5 for power loss calculation only max. Unit 1500 V 0,12 K/W K/W 0,04 TC = 25°C 1040 W t = 10 ms; (50 Hz), sine TVJ = 45°C 10,8 kA t = 8,3 ms; (60 Hz), sine VR = 0 V 11,7 kA t = 10 ms; (50 Hz), sine TVJ = 150°C 9,18 kA t = 8,3 ms; (60 Hz), sine VR = 0 V 9,92 kA t = 10 ms; (50 Hz), sine TVJ = 45°C t = 8,3 ms; (60 Hz), sine VR = 0 V 566,1 kA²s t = 10 ms; (50 Hz), sine TVJ = 150°C 421,4 kA²s t = 8,3 ms; (60 Hz), sine VR = 0 V VR = 400 V; f = 1 MHz TVJ = 25°C 583,2 kA²s 409,0 kA²s 381 Data according to IEC 60747and per semiconductor unless otherwise specified pF 20220914k MDD312-14N1 Package Ratings Y1 Symbol I RMS Definition Conditions RMS current per terminal min. typ. max. 600 Unit A TVJ virtual junction temperature -40 150 °C T op operation temperature -40 125 °C Tstg storage temperature -40 125 °C 680 Weight g MD mounting torque 4,5 7 Nm MT terminal torque 11 13 Nm d Spp/App terminal to terminal creepage distance on surface | striking distance through air terminal to backside d Spb/Apb VISOL t = 1 second isolation voltage t = 1 minute Production Index (PI) Date Code (DC) 50/60 Hz, RMS; IISOL ≤ 1 mA 16,0 mm 16,0 mm 4800 V 4000 V Circuit yywwAA Part Number Lot.No: xxxxxx Data Matrix: part no. (1-19), DC + PI (20-25), lot.no.# (26-31), blank (32), serial no.# (33-36) Ordering Standard Ordering Number MDD312-14N1 Similar Part MDD312-12N1 MDD312-16N1 MDD312-18N1 MDD312-20N1 Y1-CU Y1-CU Y1-CU Y1-CU MDD312-22N1 Y1-CU Equivalent Circuits for Simulation I V0 R0 Marking on Product MDD312-14N1 Package Delivery Mode Box Code No. 463434 Voltage class 1200 1600 1800 2000 2200 * on die level T VJ = 150 °C Rectifier V 0 max threshold voltage 0,8 V R0 max slope resistance * 0,4 mΩ IXYS reserves the right to change limits, conditions and dimensions. © 2022 IXYS all rights reserved Quantity 3 Data according to IEC 60747and per semiconductor unless otherwise specified 20220914k MDD312-14N1 Outlines Y1 43 10 32 +0 -1,9 52 +0 -1,4 49 2 15 ±1 3x M8 35 28.5 1 2 38 50 22.5 45 67 18 20 3 6.2 80 92 115 2 IXYS reserves the right to change limits, conditions and dimensions. © 2022 IXYS all rights reserved 1 3 Data according to IEC 60747and per semiconductor unless otherwise specified 20220914k MDD312-14N1 Rectifier 106 10000 DC 180 ° sin 120 ° 60 ° 30 ° 500 50 Hz 80 % VRRM TVJ = 45°C TVJ = 150°C 8000 IFSM VR = 0 V 400 IFAVM I2t 6000 300 TVJ = 45°C 2 [A] [A s] [A] 200 TVJ = 150°C 4000 100 105 2000 0.01 0.1 1 0 1 10 t [s] 0 25 50 t [ms] Fig. 2 I2t versus time (1-10 ms) Fig. 1 Surge overload current IFSM: Crest value, t: duration 75 Fig. 3 Maximum forward current at case temperature 600 600 TVJ = 125°C VR = 600 V R thKA K/W 0.06 0.1 0.2 0.3 0.4 0.6 0.8 500 400 Ptot 500 400 IRM 300 300 DC 180 ° sin 120 ° 60 ° 30 ° [W] 200 [A] IF = 400 A 200 100 100 0 0 0 100 200 300 400 500 0 25 IFAVM [A] 50 75 100 125 150 0 50 TA [°C] 100 150 200 di F /dt [A/µs] Fig. 5 Typ. peak reverse current Fig. 4 Power dissipation vs. forward current & ambient temperature (per diode) 25 1750 TVJ = 125°C VR = 600 V R thKA K/W 1500 0.04 0.06 0.08 0.12 0.2 0.3 0.5 1250 Ptot 100 125 150 TC [°C] R L 1000 20 trr 15 [W] [µs] 750 IF = 400 A 10 Circuit B2U 2 x MDD312 500 5 250 0 0 0 100 200 300 400 500 600 0 IdAVM [A] 25 50 75 100 125 150 TA [°C] Fig. 6 Single phase rectifier bridge: Power dissipation vs. direct output current and ambient temperature R = resistive load, L = inductive load IXYS reserves the right to change limits, conditions and dimensions. © 2022 IXYS all rights reserved 0 50 100 150 200 diF /dt [A/µs] Fig. 7 Typ. recovery time trr versus -diF /dt Data according to IEC 60747and per semiconductor unless otherwise specified 20220914k MDD312-14N1 Rectifier 3000 R thKA K/W 0.03 0.06 0.1 0.15 0.2 0.3 0.4 2500 2000 Ptot 1500 [W] Circuit B6U 3 x M DD 312 1000 500 0 0 200 400 600 800 0 25 50 75 100 125 150 TA [°C] IFAVM [A] Fig. 8 Three phase rectifier bridge: Power dissipation vs. direct output current & ambient temperature 0.20 RthJC for various conduction angles d: RthJC [K/W] d 0.120 DC 180° 0.128 0.135 120° 0.153 60° 30° 0.185 0.15 ZthJC 0.10 30° 60° 120° 180° DC [K/W] 0.05 0.00 10-3 10-2 10-1 100 Constants for ZthJC calculation: 101 102 i 1 2 3 4 Rthi (K/W) 0.0058 0.0310 0.0720 0.0112 ti (s) 0.00054 0.09800 0.54000 12.0000 t [s] Fig. 9 Transient thermal impedance junction to case (per diode) 0.25 RthJK for various conduction angles d: RthJK [K/W] d 0.160 DC 180° 0.168 0.175 120° 0.193 60° 30° 0.225 0.20 ZthJK 0.15 [K/W] 0.10 30° 60° 120° 180° DC 0.05 0.00 10-3 10-2 10-1 100 101 t [s] Constants for ZthJK calculation: 102 i 1 2 3 4 5 Rthi (K/W) 0.0058 0.0310 0.0720 0.0112 0.0400 ti (s) 0.00054 0.09800 0.54000 12.0000 12.0000 Fig. 10 Transient thermal impedance junction to heatsink (per diode) IXYS reserves the right to change limits, conditions and dimensions. © 2022 IXYS all rights reserved Data according to IEC 60747and per semiconductor unless otherwise specified 20220914k