MDD44-12N1B

MDD44-12N1B Standard Rectifier Module VRRM = 2x 1200 V I FAV = 59 A VF = 1.26 V Phase leg Part number MDD44-12N1B Backside: isolated 2 1 3 Features / Advantages: Applications: Package: TO-240AA ● Package with DCB ceramic ● Improved temperature and power cycling ● Planar passivated chips ● Very low forward voltage drop ● Very low leakage current ● Diode for main rectification ● For single and three phase bridge configurations ● Supplies for DC power equipment ● Input rectifiers for PWM inverter ● Battery DC power supplies ● Field supply for DC motors ● Isolation Voltage: 4800 V~ ● Industry standard outline ● RoHS compliant ● Height: 30 mm ● Base plate: DCB ceramic ● Reduced weight ● Advanced power cycling Disclaimer Notice Information furnished is believed to be accurate and reliable. However, users should independently evaluate the suitability of and test each product selected for their own applications. Littelfuse products are not designed for, and may not be used in, all applications. Read complete Disclaimer Notice at www.littelfuse.com/disclaimer-electronics. IXYS reserves the right to change limits, conditions and dimensions. © 2020 IXYS all rights reserved Data according to IEC 60747and per semiconductor unless otherwise specified 20200701d MDD44-12N1B Ratings Rectifier Conditions Symbol VRSM Definition max. non-repetitive reverse blocking voltage TVJ = 25°C VRRM max. repetitive reverse blocking voltage TVJ = 25°C 1200 IR reverse current VF forward voltage drop min. typ. VR = 1200 V TVJ = 25°C 100 µA TVJ = 150°C 10 mA I F = 100 A TVJ = 25°C 1.30 V 1.60 V 1.26 V TVJ = 125 °C I F = 100 A I F = 200 A I FAV average forward current TC = 100 °C I F(RMS) RMS forward current 180° sine VF0 threshold voltage rF slope resistance R thJC thermal resistance junction to case for power loss calculation only R thCH thermal resistance case to heatsink total power dissipation I FSM max. forward surge current I²t CJ value for fusing junction capacitance IXYS reserves the right to change limits, conditions and dimensions. © 2020 IXYS all rights reserved V VR = 1200 V I F = 200 A Ptot max. Unit 1300 V 1.67 V T VJ = 150 °C 59 A 100 A TVJ = 150 °C 0.80 V 4.3 mΩ 0.59 K/W K/W 0.2 TC = 25°C 212 W t = 10 ms; (50 Hz), sine TVJ = 45°C 1.15 kA t = 8,3 ms; (60 Hz), sine VR = 0 V 1.24 kA t = 10 ms; (50 Hz), sine TVJ = 150 °C 980 A t = 8,3 ms; (60 Hz), sine VR = 0 V 1.06 kA t = 10 ms; (50 Hz), sine TVJ = 45°C 6.62 kA²s t = 8,3 ms; (60 Hz), sine VR = 0 V 6.40 kA²s t = 10 ms; (50 Hz), sine TVJ = 150 °C 4.80 kA²s t = 8,3 ms; (60 Hz), sine VR = 0 V VR = 400 V; f = 1 MHz TVJ = 25°C 4.63 kA²s 27 Data according to IEC 60747and per semiconductor unless otherwise specified pF 20200701d MDD44-12N1B Package Ratings TO-240AA Symbol I RMS Definition Conditions RMS current per terminal min. TVJ virtual junction temperature T op operation temperature Tstg storage temperature -40 typ. max. 200 Unit A -40 150 °C -40 125 °C 125 °C 76 Weight g MD mounting torque 2.5 4 Nm MT terminal torque 2.5 4 Nm d Spp/App creepage distance on surface | striking distance through air d Spb/Apb VISOL 13.0 16.0 t = 1 second isolation voltage t = 1 minute UL Logo Date Code + Location terminal to terminal terminal to backside 50/60 Hz, RMS; IISOL ≤ 1 mA 9.7 mm 16.0 mm 4800 V 4000 V Circuit yywwZ XXXXXXXX 2D Barcode 123456 Part Number Lot# Ordering Standard Ordering Number MDD44-12N1B Similar Part MDD44-08N1B MDD44-14N1B MDD44-16N1B MDD44-18N1B Equivalent Circuits for Simulation I V0 R0 Marking on Product MDD44-12N1B Package TO-240AA TO-240AA TO-240AA TO-240AA * on die level Delivery Mode Box Code No. 458023 Voltage class 800 1400 1600 1800 T VJ = 150°C Rectifier V 0 max threshold voltage 0.8 V R0 max slope resistance * 3.1 mΩ IXYS reserves the right to change limits, conditions and dimensions. © 2020 IXYS all rights reserved Quantity 36 Data according to IEC 60747and per semiconductor unless otherwise specified 20200701d MDD44-12N1B Outlines TO-240AA 2 IXYS reserves the right to change limits, conditions and dimensions. © 2020 IXYS all rights reserved 1 3 Data according to IEC 60747and per semiconductor unless otherwise specified 20200701d MDD44-12N1B Rectifier 120 104 1500 VR = 0 V DC 180° sin 120° 60° 30° 50 Hz, 80% VRRM 100 TVJ = 45°C 1000 TVJ = 45°C IFSM 80 IFAVM 2 It TVJ = 125°C 60 [A2s] [A] [A] TVJ = 125°C 500 40 20 0 10-3 103 10-2 10 -1 100 101 0 1 2 3 t [s] 6 8 10 0 t [ms] Fig. 1 Surge overload current ITSM, IFSM: Crest value, t: duration 100 150 200 TC [°C] Fig. 3 Maximum forward current at case temperature Fig. 2 I2t versus time (1-10 ms) 120 50 RthJA [K/W] 1 100 1.5 2 80 2.5 PT 3 60 4 [W] 5 DC 180° sin 120° 60° 30° 40 20 0 0 20 40 60 80 6 0 50 ITAVM, IFAVM [A] 100 150 TA [°C] Fig. 4 Power dissipation vs. onstate current and ambient temperature (per diode) 400 RthKA [K/W] 0.2 0.25 300 R 0.3 L 0.4 Ptot 0.5 200 0.6 [W] 1.0 1.3 Circuit B2 2x MDD44 100 0 0 50 100 IdAVM [A] 0 50 100 150 TA [°C] Fig. 6 Single phase rectifier bridge: Power dissipation versus direct output current and ambient temperature; R = resistive load,L = inductive load IXYS reserves the right to change limits, conditions and dimensions. © 2020 IXYS all rights reserved Data according to IEC 60747and per semiconductor unless otherwise specified 20200701d MDD44-12N1B Rectifier 600 RthJA [KW] 0.15 500 0.2 0.35 400 0.3 Ptot 0.4 300 0.5 [W] 0.6 200 0.7 Circuit B6 3x MDD44 100 0 0 50 100 150 0 50 IDAVM [A] 100 150 200 TA [°C] Fig. 6 Three phase rectifier bridge: Power dissipation versus direct output current and ambient temperature 0.8 RthJC for various conduction angles d: d RthJC [K/W] 30° 60° 120° 0.6 180° DC ZthJC 0.4 DC 0.59 180° 0.61 120° 0.63 60° 0.66 30° 0.70 [K/W] Constants for ZthJC calculation: i Rthi [K/W] 0.2 0 10-3 10-2 10-1 100 101 102 ti [s] 1 0.012 0.0012 2 0.045 0.0950 3 0.533 0.4550 103 t [s] Fig. 7 Transient thermal impedance junction to case (per diode) 1.0 RthJK for various conduction angles d: d RthJK [K/W] DC 0.79 180° 0.81 120° 0.83 60° 0.86 30° 0.90 30° 60° 0.8 120° 180° ZthJK 0.6 [K/W] 0.4 DC Constants for ZthJK calculation: i Rthi [K/W] 0.2 0 10-3 10-2 10-1 100 101 102 103 1 2 3 4 0.012 0.045 0.533 0.200 ti [s] 0.0012 0.0950 0.4550 0.4950 t [s] Fig. 8 Transient thermal impedance junction to heatsink (per thyristor) IXYS reserves the right to change limits, conditions and dimensions. © 2020 IXYS all rights reserved Data according to IEC 60747and per semiconductor unless otherwise specified 20200701d