MDD600-18N1

Date: 26.11.2004 IXYS Data Sheet Issue: 3 Dual Diode Modules MD# 600 Absolute Maximum Ratings VRRM VDRM [V] MDD MDA MDK 1200 600-12N1 600-12N1 600-12N1 1400 600-14N1 600-14N1 600-14N1 1600 600-16N1 600-16N1 600-16N1 1800 600-18N1 600-18N1 600-18N1 2000 600-20N1 600-20N1 600-20N1 2200 600-22N1 600-22N1 600-22N1 VOLTAGE RATINGS VRRM VRSM Repetitive peak reverse voltage 1) Non-repetitive peak reverse voltage 1) OTHER RATINGS IF(AV)M IF(AV)M IF(AV)M Maximum average forward current. Tcase = 111°C Maximum average forward current. Tcase = 85°C Nominal RMS forward current. Tcase = 55°C IF(d.c.) D.C. forward current. Tcase = 55°C ITSM 2) Maximum average forward current. Tcase = 100°C IF(RMS) 2) 2) 2 Peak non-repetitive surge tp = 10 ms, VRM = 60%VRRM ITSM2 Peak non-repetitive surge tp = 10 ms, VRM ≤ 10 V 2 2 I t capacity for fusing tp = 10 ms, VRM = 60%VRRM It 2 I t capacity for fusing tp = 10 ms, VRM ≤ 10 V Visol Isolation Voltage Tj op Operating temperature range Tj max Maximum junction temperature Tstg Storage temperature range It 2 3) 3) 3) 4) 3) MAXIMUM LIMITS UNITS 1200-2200 V 1300-2300 V MAXIMUM LIMITS UNITS 600 A 883 A 726 A 1818 A 1158 A 21.8 kA 24.0 kA 2.38×10 6 As 2 2.88×10 6 As 2 3500 V -40 to +125 °C +150 °C -40 to +125 °C Notes: 1) 2) 3) 4) De-rating factor of 0.13% per °C is applicable for Tj below 25°C. Single phase; 50 Hz, 180° half-sinewave. Half-sinewave, 150°C Tj initial. AC RMS voltage, 50 Hz, 1min test. Data Sheet. MD#600-12N1 to 22N1 Issue 3 Page 1 of 9 November, 2004 IXYS Dual Diode Module Types MD#600-12N1 to MD#600-22N1 Characteristics PARAMETER MIN. TYP. MAX. TEST CONDITIONS 1) UNITS VFM Maximum peak forward voltage - - 1.15 IFM = 1800 A VFM Maximum peak forward voltage - - 0.88 IFM = 500 A VT0 Threshold voltage - - 0.75 V rT Slope resistance - - 0.2 mΩ IRRM Peak reverse current - - 50 Qrr Recovered Charge - 1800 - Qra Recovered Charge, 50% chord - 1500 1750 Irm Reverse recovery current - 165 - trr Reverse recovery time, 50% chord - 18 - RthJC Thermal resistance, junction to case - - 0.062 Single Diode K/W - - 0.031 Whole Module K/W - - 0.02 Single Diode K/W - - 0.01 Whole Module K/W 4.25 - 5.75 RthCK Thermal resistance, case to heatsink F1 Mounting force (to heatsink) F2 Mounting force (to terminals) Wt Weight 10.2 - 13.8 - 1.2 - Rated VRRM V mA µC IFM = 1000 A, tp = 1 ms, di/dt = 10 A/µs, Vr = 50 V µC A µs Nm 2) Nm kg Notes: 1) Unless otherwise indicated Tj = 150°C 2) Screws must be lubricated Data Sheet. MD#600-12N1 to 22N1 Issue 3 Page 2 of 9 November, 2004 IXYS Dual Diode Module Types MD#600-12N1 to MD#600-22N1 Notes on Ratings and Characteristics 1.0 Voltage Grade Table VRRM V 1200 1400 1600 1800 2000 2200 Voltage Grade 12 14 16 18 20 22 VRSM V 1300 1500 1700 1900 2100 2300 VR DC V 820 930 1040 1150 1260 1370 2.0 Extension of Voltage Grades This report is applicable to other voltage grades when supply has been agreed by Sales/Production. 3.0 De-rating Factor A blocking voltage de-rating factor of 0.13%/°C is applicable to this device for Tj below 25°C. 4.0 Snubber Components When selecting snubber components, care must be taken not to use excessively large values of snubber capacitor or excessively small values of snubber resistor. Such excessive component values may lead to device damage due to the large resultant values of snubber discharge current. If required, please consult the factory for assistance. 5.0 Computer Modelling Parameters 5.1 Device Dissipation Calculations 2 I AV = WAV = 2 − VT 0 + VT 0 + 4 ⋅ ff ⋅ rT ⋅WAV 2 ⋅ ff 2 ⋅ rT and: ∆T Rth ∆T = T j max − TK Where VT0=0.75V, rT=0.2mΩ, Rth = Supplementary thermal impedance, see table below and ff = Form factor, see table below. Supplementary Thermal Impedance Conduction Angle 30° 60° 90° 120° 180° 270° d.c. Square wave 0.07067 0.06791 0.06629 0.06525 0.06395 0.06277 0.062 Sine wave 0.06767 0.06536 0.06408 0.0633 0.062 Form Factors Conduction Angle 30° 60° 90° 120° 180° 270° d.c. Square wave 3.464 2.449 2 1.732 1.414 1.149 1 Sine wave 3.98 2.778 2.22 1.879 1.57 Data Sheet. MD#600-12N1 to 22N1 Issue 3 Page 3 of 9 November, 2004 IXYS Dual Diode Module Types MD#600-12N1 to MD#600-22N1 5.2 Calculating VF using ABCD Coefficients The on-state characteristic IF vs. VF, on page 6 is represented in two ways; (i) the well established VT0 and rT tangent used for rating purposes and (ii) a set of constants A, B, C, D, forming the coefficients of the representative equation for VF in terms of IF given below: VF = A + B ⋅ ln (I F ) + C ⋅ I F + D ⋅ I F The constants, derived by curve fitting software, are given below for both hot and cold characteristics. The resulting values for VF agree with the true device characteristic over a current range, which is limited to that plotted. 25°C Coefficients 150°C Coefficients A 0.46164273 A 0.435837127 B 0.1048225 B 0.06435749 C 1.84243×10 D -2.353947×10 -4 C 1.6116×10 D -7.48063×10 Data Sheet. MD#600-12N1 to 22N1 Issue 3 -3 Page 4 of 9 -4 -3 November, 2004 IXYS Dual Diode Module Types MD#600-12N1 to MD#600-22N1 5.3 D.C. Thermal Impedance Calculation −t  τ rt = ∑ rp ⋅ 1 − e p  p =1      p=n Where p = 1 to n, n is the number of terms in the series and: t = Duration of heating pulse in seconds. rt = Thermal resistance at time t. rp = Amplitude of pth term. τp = Time Constant of rth term. The coefficients for this device are shown in the tables below: D.C. Term 1 2 3 -3 4 -3 -3 rp 0.05428 4.4894×10 2.3382×10 0.8759×10 τp 2.69428 0.126017 0.013878 1.435×10 -3 6.0 Reverse recovery ratings (i) Qra is based on 50% IRM chord as shown in Fig. 1 Fig. 1 (ii) Qrr is based on a 150 µs integration time i.e. 150 µs Qrr = ∫i rr .dt 0 (iii) K Factor = Data Sheet. MD#600-12N1 to 22N1 Issue 3 t1 t2 Page 5 of 9 November, 2004 IXYS Dual Diode Module Types MD#600-12N1 to MD#600-22N1 Curves Figure 1 - Forward characteristics of Limit device Instantaneous Forward current - I FM (A) 10000 MD#600-12N1 to 22N1 Issue 3 Tj = 150°C Tj = 25°C 1000 100 0 0.5 1 1.5 2 Instantaneous Forward voltage - VFM (V) Figure 2 - Transient thermal impedance 0.1 MD#600-12N1 to 22N1 Issue 3 Single Diode Thermal impedance (K/W) 0.01 0.001 0.0001 0.00001 0.00001 0.0001 0.001 0.01 0.1 1 10 100 Time (s) Data Sheet. MD#600-12N1 to 22N1 Issue 3 Page 6 of 9 November, 2004 IXYS Dual Diode Module Types MD#600-12N1 to MD#600-22N1 Figure 3 - Total recovered charge, Qrr 10000 Figure 4 - Recovered charge, Qra (50% chord) 10000 MD#600-12N1 to 22N1 Issue 3 MD#600-12N1 to 22N1 Issue 3 Tj=150°C Tj=150°C 2000A Recovered charge - Qra, 50% chord (µC) 1500A Recovered charge - Qrr (µC) 1000A 500A 1000 2000A 1500A 1000A 500A 1000 1 10 100 1000 1 10 di/dt (A/µs) Figure 5 - Peak reverse recovery current, Irm MD#600-12N1 to 22N1 Issue 3 Tj=150°C MD#600-12N1 to 22N1 Issue 3 Reverse recovery time - trr, (50% chord) - (µs) Tj=150°C Reverse recovery current - Irm (A) 1000 Figure 6 - Maximum recovery time, trr (50% chord) 100 10000 100 di/dt (A/µs) 2000A 1500A 1000A 500A 1000 10 2000A 1500A 1000A 500A 1 100 1 10 100 1 1000 Data Sheet. MD#600-12N1 to 22N1 Issue 3 10 100 1000 di/dt (A/µs) di/dt (A/µs) Page 7 of 9 November, 2004 IXYS Dual Diode Module Types MD#600-12N1 to MD#600-22N1 Figure 8 – Forward current vs. Heatsink temperature Figure 7 – Forward current vs. Power dissipation 2500 160 MD#600-12N1 to 22N1 Issue 3 MD#600-12N1 to 22N1 Issue 3 140 ½ wave 2000 d.c. 3ø Maximum permissible heatsink temperature (°C) Maximum Forward Dissipation (W) 6ø 1500 1000 120 100 80 60 40 500 20 6ø 0 0 500 1000 1500 3ø ½ wave d.c. 0 2000 0 Mean Forward Current (A) (Whole cycle averaged) 500 1000 1500 2000 Mean forward current (A) (Whole cycle averaged) Figure 9 - Maximum surge Rating 100000 MD#600-12N1 to 22N1 Issue 3 1.00E+08 I2t: VRRM ≤10V 2 Maximum I t (A s) I2t: 60% VRRM 10000 ITSM: VRRM ≤10V 2 Total peak half sine surge current (A) Tj (initial) = 150°C 1.00E+07 ITSM: 60% VRRM 1000 1 3 5 10 Duration of surge (ms) Data Sheet. MD#600-12N1 to 22N1 Issue 3 1 5 10 50 100 1.00E+06 Duration of surge (cycles @ 50Hz) Page 8 of 9 November, 2004 IXYS Dual Diode Module Types MD#600-12N1 to MD#600-22N1 Outline Drawing & Ordering Information 3 1 2 3 1 2 MDD MDA 3 1 2 MDK ORDERING INFORMATION M Fixed Type Code D# Configuration code DD, DA, DK (Please quote 11 digit code as below) 600

N 1 Average Current Rating Voltage code VDRM/100 12-22 Standard diode Fixed Version Code Order code: MDD600-14N1– MDD configuration, 1400V VDRM, VRRM IXYS IXYS Semiconductor GmbH Edisonstraße 15 D-68623 Lampertheim Tel: +49 6206 503-0 Fax: +49 6206 503-627 E-mail: marcom@ixys.de Westcode Semiconductors Ltd Langley Park Way, Langley Park, Chippenham, Wiltshire, SN15 1GE. Tel: +44 (0)1249 444524 Fax: +44 (0)1249 659448 E-mail: WSL.sales@westcode,com www.ixys.com WESTCODE An IXYS Company IXYS Corporation 3540 Bassett Street Santa Clara CA 95054 USA Tel: +1 (408) 982 0700 Fax: +1 (408) 496 0670 E-mail: sales@ixys.net Westcode Semiconductors Inc 3270 Cherry Avenue Long Beach CA 90807 USA Tel: +1 (562) 595 6971 Fax: +1 (562) 595 8182 E-mail: WSI.sales@westcode.com www.westcode.com The information contained herein is confidential and is protected by Copyright. The information may not be used or disclosed except with the written permission of and in the manner permitted by the proprietors IXYS Semiconductors GmbH. © IXYS Semiconductor GmbH. In the interest of product improvement, IXYS reserves the right to change specifications at any time without prior notice. Data Sheet. MD#600-12N1 to 22N1 Issue 3 Page 9 of 9 November, 2004