MDMA110P1600TG

MDMA110P1600TG Standard Rectifier Module VRRM = 2x 1600 V I FAV = 110 A VF = 1.14 V Phase leg Part number MDMA110P1600TG Backside: isolated 2 1 3 Features / Advantages: Applications: Package: TO-240AA ● Package with DCB ceramic ● Improved temperature and power cycling ● Planar passivated chips ● Very low forward voltage drop ● Very low leakage current ● Diode for main rectification ● For single and three phase bridge configurations ● Supplies for DC power equipment ● Input rectifiers for PWM inverter ● Battery DC power supplies ● Field supply for DC motors ● Isolation Voltage: 4800 V~ ● Industry standard outline ● RoHS compliant ● Height: 30 mm ● Base plate: DCB ceramic ● Reduced weight ● Advanced power cycling Disclaimer Notice Information furnished is believed to be accurate and reliable. However, users should independently evaluate the suitability of and test each product selected for their own applications. Littelfuse products are not designed for, and may not be used in, all applications. Read complete Disclaimer Notice at www.littelfuse.com/disclaimer-electronics. IXYS reserves the right to change limits, conditions and dimensions. © 2019 IXYS all rights reserved Data according to IEC 60747and per semiconductor unless otherwise specified 20191202d MDMA110P1600TG Ratings Rectifier Conditions Symbol VRSM Definition max. non-repetitive reverse blocking voltage TVJ = 25°C VRRM max. repetitive reverse blocking voltage TVJ = 25°C 1600 IR reverse current VF forward voltage drop min. typ. VR = 1600 V TVJ = 25°C 100 µA TVJ = 150°C 2 mA I F = 110 A TVJ = 25°C 1.21 V 1.44 V 1.14 V TVJ = 125 °C I F = 110 A I F = 220 A average forward current VF0 threshold voltage rF slope resistance R thJC thermal resistance junction to case TC = 100 °C rectangular R thCH thermal resistance case to heatsink total power dissipation I FSM max. forward surge current I²t CJ value for fusing junction capacitance IXYS reserves the right to change limits, conditions and dimensions. © 2019 IXYS all rights reserved 1.44 V T VJ = 150 °C 110 A TVJ = 150 °C 0.82 V 2.8 mΩ d = 0.5 for power loss calculation only Ptot V VR = 1600 V I F = 220 A I FAV max. Unit 1700 V 0.3 K/W K/W 0.2 TC = 25°C 415 W t = 10 ms; (50 Hz), sine TVJ = 45°C 2.00 kA t = 8,3 ms; (60 Hz), sine VR = 0 V 2.16 kA t = 10 ms; (50 Hz), sine TVJ = 150 °C 1.70 kA t = 8,3 ms; (60 Hz), sine VR = 0 V 1.84 kA t = 10 ms; (50 Hz), sine TVJ = 45°C 20.0 kA²s t = 8,3 ms; (60 Hz), sine VR = 0 V 19.4 kA²s t = 10 ms; (50 Hz), sine TVJ = 150 °C 14.5 kA²s t = 8,3 ms; (60 Hz), sine VR = 0 V VR = 400 V; f = 1 MHz TVJ = 25°C 14.0 kA²s 73 Data according to IEC 60747and per semiconductor unless otherwise specified pF 20191202d MDMA110P1600TG Package Ratings TO-240AA Symbol I RMS Definition Conditions RMS current per terminal min. TVJ virtual junction temperature T op operation temperature Tstg storage temperature -40 typ. max. 200 Unit A -40 150 °C -40 125 °C 125 °C 76 Weight g MD mounting torque 2.5 4 Nm MT terminal torque 2.5 4 Nm d Spp/App d Spb/Apb VISOL UL Logo Date Code + Location 16.0 50/60 Hz, RMS; IISOL ≤ 1 mA 9.7 mm 16.0 mm 4800 V 4000 V Part description M D M A 110 P 1600 TG Circuit yywwZ XXXXXXXX 2D Barcode 123456 Part Number Lot# Ordering Standard Ordering Number MDMA110P1600TG Equivalent Circuits for Simulation V0 13.0 t = 1 second isolation voltage t = 1 minute I terminal to terminal terminal to backside creepage distance on surface | striking distance through air R0 Marking on Product MDMA110P1600TG * on die level = = = = = = = = Module Diode Standard Rectifier (up to 1800V) Current Rating [A] Phase leg Reverse Voltage [V] TO-240AA Delivery Mode Box Code No. 514311 T VJ = 150°C Rectifier V 0 max threshold voltage 0.82 V R0 max slope resistance * 1.6 mΩ IXYS reserves the right to change limits, conditions and dimensions. © 2019 IXYS all rights reserved Quantity 36 Data according to IEC 60747and per semiconductor unless otherwise specified 20191202d MDMA110P1600TG Outlines TO-240AA 2 IXYS reserves the right to change limits, conditions and dimensions. © 2019 IXYS all rights reserved 1 3 Data according to IEC 60747and per semiconductor unless otherwise specified 20191202d MDMA110P1600TG Rectifier 105 300 250 VR = 0 V 1600 200 TVJ = 45°C IFSM IF 150 I 2t [A] [A] TVJ = 45°C 104 1200 2 [A s] TVJ = 150°C 100 TVJ = 25°C TVJ = 125°C TVJ = 150°C 50 TVJ = 150°C 800 50 Hz, 80%VRRM 103 0 0.5 1.0 1.5 2.0 0.001 0.01 VF [V] 0.1 1 1 2 t [s] 4 5 6 7 8 910 2 Fig. 2 Surge overload current vs. time per diode Fig. 1 Forward current versus voltage drop per diode 3 t [ms] Fig. 3 I t versus time per diode 200 180 150 DC = 1 0.5 0.4 0.33 0.17 0.08 120 Ptot 90 RthHA = 160 0.1 K/W 0.2 K/W 0.4 K/W 0.6 K/W 0.8 K/W 1.0 K/W DC = 1 0.5 0.4 0.33 0.17 0.08 120 IF(AV)M [A] 80 [W] 60 40 30 0 0 0 20 40 60 80 100 120 0 IF(AV)M [A] 50 100 150 0 50 100 150 TC [°C] Tamb [°C] Fig. 5 Max. forward current vs. case temperature per diode Fig. 4 Power dissipation vs. forward current and ambient temperature per diode 0.35 0.30 0.25 Constants for ZthJC calculation: ZthJC i 0.20 [K/W] 0.15 0.10 Rthi (K/W) ti (s) 1 0.01 0.001 2 0.04 0.013 3 0.16 0.070 4 0.09 0.400 0.05 0.00 1 10 100 1000 10000 t [ms] Fig. 6 Transient thermal impedance junction to case vs. time per diode IXYS reserves the right to change limits, conditions and dimensions. © 2019 IXYS all rights reserved Data according to IEC 60747and per semiconductor unless otherwise specified 20191202d