MDMA200P1600SA

MDMA200P1600SA on request Standard Rectifier Module VRRM = 2x 1600 V I FAV = 200 A VF = 1.06 V Phase leg Part number MDMA200P1600SA Backside: isolated 2 3/4 1 Features / Advantages: Applications: Package: SimBus A ● Planar passivated chips ● Very low leakage current ● Very low forward voltage drop ● Improved thermal behaviour ● Diode for main rectification ● For single and three phase bridge configurations ● Isolation Voltage: 4800 V~ ● Industry standard outline ● RoHS compliant ● Gate: Spring contacts for solder-free PCB-mounting ● Height: 17 mm ● Base plate: Copper internally DCB isolated ● Advanced power cycling Disclaimer Notice Information furnished is believed to be accurate and reliable. However, users should independently evaluate the suitability of and test each product selected for their own applications. Littelfuse products are not designed for, and may not be used in, all applications. Read complete Disclaimer Notice at www.littelfuse.com/disclaimer-electronics. IXYS reserves the right to change limits, conditions and dimensions. © 2019 IXYS all rights reserved Data according to IEC 60747and per semiconductor unless otherwise specified 20191204b MDMA200P1600SA on request Ratings Rectifier Conditions Symbol VRSM Definition max. non-repetitive reverse blocking voltage TVJ = 25°C VRRM max. repetitive reverse blocking voltage TVJ = 25°C 1600 IR reverse current VF forward voltage drop min. typ. VR = 1600 V TVJ = 25°C 200 µA TVJ = 150°C 15 mA I F = 200 A TVJ = 25°C 1.13 V 1.33 V 1.06 V TVJ = 125 °C I F = 200 A I F = 400 A average forward current VF0 threshold voltage rF slope resistance R thJC thermal resistance junction to case TC = 110 °C rectangular R thCH thermal resistance case to heatsink total power dissipation I FSM max. forward surge current I²t CJ value for fusing junction capacitance IXYS reserves the right to change limits, conditions and dimensions. © 2019 IXYS all rights reserved 1.32 V T VJ = 150 °C 200 A TVJ = 150 °C 0.76 V 1.4 mΩ d = 0.5 for power loss calculation only Ptot V VR = 1600 V I F = 400 A I FAV max. Unit 1700 V 0.15 K/W K/W 0.08 TC = 25°C 830 W t = 10 ms; (50 Hz), sine TVJ = 45°C 6.00 kA t = 8,3 ms; (60 Hz), sine VR = 0 V 6.48 kA t = 10 ms; (50 Hz), sine TVJ = 150 °C 5.10 kA t = 8,3 ms; (60 Hz), sine VR = 0 V 5.51 kA t = 10 ms; (50 Hz), sine TVJ = 45°C 180.0 kA²s t = 8,3 ms; (60 Hz), sine VR = 0 V 174.7 kA²s t = 10 ms; (50 Hz), sine TVJ = 150 °C 130.1 kA²s t = 8,3 ms; (60 Hz), sine VR = 0 V VR = 400 V; f = 1 MHz TVJ = 25°C 126.3 kA²s 273 Data according to IEC 60747and per semiconductor unless otherwise specified pF 20191204b MDMA200P1600SA on request Package Ratings SimBus A Symbol I RMS Definition Conditions RMS current per terminal min. TVJ virtual junction temperature T op operation temperature Tstg storage temperature -40 max. 300 Unit A -40 150 °C -40 125 °C 125 °C 152 Weight MD mounting torque MT terminal torque d Spp/App Date Code Logo UL 14.0 Location Part Number Ordering Standard M D M A 200 P 1600 SA 2D Barcode Ordering Number MDMA200P1600SA Equivalent Circuits for Simulation R0 50/60 Hz, RMS; IISOL ≤ 1 mA Marking on Product MDMA200P1600SA * on die level = = = = = = = = 3 5 Nm 2.5 5 Nm 10.0 mm 10.0 mm 4800 V 4000 V Module Diode Standard Rectifier (up to 1800V) Current Rating [A] Phase leg Reverse Voltage [V] SimBus A Delivery Mode Blister Quantity 9 Code No. 510373 T VJ = 150°C Rectifier V 0 max threshold voltage 0.76 V R0 max slope resistance * 0.8 mΩ IXYS reserves the right to change limits, conditions and dimensions. © 2019 IXYS all rights reserved g Part description yywwZ XXXXXXXXX V0 14.0 t = 1 second isolation voltage t = 1 minute I terminal to terminal terminal to backside creepage distance on surface | striking distance through air d Spb/Apb VISOL typ. Data according to IEC 60747and per semiconductor unless otherwise specified 20191204b MDMA200P1600SA on request Outlines SimBus A 2 IXYS reserves the right to change limits, conditions and dimensions. © 2019 IXYS all rights reserved 3/4 1 Data according to IEC 60747and per semiconductor unless otherwise specified 20191204b MDMA200P1600SA on request Rectifier 400 6000 300 5000 IF 106 IFSM 200 [A] TVJ = 25°C TVJ = 125°C TVJ = 150°C 100 I2t TVJ = 45°C 4000 VR = 0 V TVJ = 45°C 105 2 [A] [A s] TVJ = 150°C TVJ = 150°C 3000 0 0.5 1.0 1.5 50 Hz, 80%VRRM 2000 0.001 0.01 VF [V] 104 0.1 1 1 2 t [s] 4 5 6 7 8 910 2 Fig. 2 Surge overload current vs. time per diode Fig. 1 Forward current versus voltage drop per diode 3 t [ms] Fig. 3 I t versus time per diode 350 350 RthHA = 300 250 Ptot 200 [W] 300 0.08 K/W 0.10 K/W 0.20 K/W 0.40 K/W 0.60 K/W 0.80 K/W DC = 1 0.5 0.4 0.33 0.17 0.08 DC = 1 0.5 0.4 0.33 0.17 0.08 250 200 IF(AV)M 150 150 [A] 100 100 50 50 0 0 0 50 100 150 200 250 0 IF(AV)M [A] 50 100 150 0 50 100 150 TC [°C] Tamb [°C] Fig. 5 Max. forward current vs. case temperature per diode Fig. 4 Power dissipation vs. forward current and ambient temperature per diode 0.16 0.14 0.12 Constants for ZthJC calculation: 0.10 ZthJC 0.08 [K/W] 0.06 0.04 i Rthi (K/W) ti (s) 1 0.006 0.0005 2 0.035 0.0400 3 0.079 0.5500 4 0.030 1.5000 0.02 0.00 1 10 100 1000 10000 t [ms] Fig. 6 Transient thermal impedance junction to case vs. time per diode IXYS reserves the right to change limits, conditions and dimensions. © 2019 IXYS all rights reserved Data according to IEC 60747and per semiconductor unless otherwise specified 20191204b