MDMA35P1600TG
Standard Rectifier Module
VRRM
= 2x 1600 V
I FAV
=
35 A
VF
=
1.1 V
Phase leg
Part number
MDMA35P1600TG
Backside: isolated
2
1
3
Features / Advantages:
Applications:
Package: TO-240AA
● Package with DCB ceramic
● Improved temperature and power cycling
● Planar passivated chips
● Very low forward voltage drop
● Very low leakage current
● Diode for main rectification
● For single and three phase
bridge configurations
● Supplies for DC power equipment
● Input rectifiers for PWM inverter
● Battery DC power supplies
● Field supply for DC motors
● Isolation Voltage: 4800 V~
● Industry standard outline
● RoHS compliant
● Height: 30 mm
● Base plate: DCB ceramic
● Reduced weight
● Advanced power cycling
Disclaimer Notice
Information furnished is believed to be accurate and reliable. However, users should independently
evaluate the suitability of and test each product selected for their own applications. Littelfuse products are not designed for,
and may not be used in, all applications. Read complete Disclaimer Notice at www.littelfuse.com/disclaimer-electronics.
IXYS reserves the right to change limits, conditions and dimensions.
© 2019 IXYS all rights reserved
Data according to IEC 60747and per semiconductor unless otherwise specified
20191202d
MDMA35P1600TG
Ratings
Rectifier
Conditions
Symbol
VRSM
Definition
max. non-repetitive reverse blocking voltage
TVJ = 25°C
VRRM
max. repetitive reverse blocking voltage
TVJ = 25°C
IR
reverse current
VF
forward voltage drop
I FAV
average forward current
VF0
threshold voltage
rF
slope resistance
R thJC
thermal resistance junction to case
thermal resistance case to heatsink
total power dissipation
I FSM
max. forward surge current
I²t
CJ
value for fusing
junction capacitance
IXYS reserves the right to change limits, conditions and dimensions.
© 2019 IXYS all rights reserved
max. Unit
1700
V
1600
V
TVJ = 25°C
20
µA
VR = 1600 V
TVJ = 150°C
1.5
mA
TVJ = 25°C
1.15
V
1.34
V
1.10
V
IF =
35 A
IF =
70 A
IF =
35 A
IF =
70 A
TVJ = 125 °C
TC = 100 °C
1.35
V
T VJ = 150 °C
35
A
TVJ = 150 °C
0.83
V
7.3
mΩ
d = 0.5
for power loss calculation only
R thCH
typ.
VR = 1600 V
rectangular
Ptot
min.
0.9 K/W
K/W
0.2
TC = 25°C
130
W
t = 10 ms; (50 Hz), sine
TVJ = 45°C
500
A
t = 8,3 ms; (60 Hz), sine
VR = 0 V
540
A
t = 10 ms; (50 Hz), sine
TVJ = 150 °C
425
A
t = 8,3 ms; (60 Hz), sine
VR = 0 V
460
A
t = 10 ms; (50 Hz), sine
TVJ = 45°C
1.25 kA²s
t = 8,3 ms; (60 Hz), sine
VR = 0 V
1.22 kA²s
t = 10 ms; (50 Hz), sine
TVJ = 150 °C
905
A²s
880
A²s
t = 8,3 ms; (60 Hz), sine
VR = 0 V
VR = 400 V; f = 1 MHz
TVJ = 25°C
19
Data according to IEC 60747and per semiconductor unless otherwise specified
pF
20191202d
MDMA35P1600TG
Package
Ratings
TO-240AA
Symbol
I RMS
Definition
Conditions
RMS current
per terminal
min.
TVJ
virtual junction temperature
T op
operation temperature
Tstg
storage temperature
-40
typ.
max.
200
Unit
A
-40
150
°C
-40
125
°C
125
°C
76
Weight
g
MD
mounting torque
2.5
4
Nm
MT
terminal torque
2.5
4
Nm
d Spp/App
d Spb/Apb
VISOL
UL
Logo
Date Code +
Location
16.0
50/60 Hz, RMS; IISOL ≤ 1 mA
9.7
mm
16.0
mm
4800
V
4000
V
Part description
M
D
M
A
35
P
1600
TG
Circuit
yywwZ
XXXXXXXX
2D Barcode
123456
Part Number
Lot#
Ordering
Standard
Ordering Number
MDMA35P1600TG
Equivalent Circuits for Simulation
V0
13.0
t = 1 second
isolation voltage
t = 1 minute
I
terminal to terminal
terminal to backside
creepage distance on surface | striking distance through air
R0
Marking on Product
MDMA35P1600TG
* on die level
=
=
=
=
=
=
=
=
Module
Diode
Standard Rectifier
(up to 1800V)
Current Rating [A]
Phase leg
Reverse Voltage [V]
TO-240AA
Delivery Mode
Box
Code No.
515014
T VJ = 150°C
Rectifier
V 0 max
threshold voltage
0.83
V
R0 max
slope resistance *
6.1
mΩ
IXYS reserves the right to change limits, conditions and dimensions.
© 2019 IXYS all rights reserved
Quantity
36
Data according to IEC 60747and per semiconductor unless otherwise specified
20191202d
MDMA35P1600TG
Outlines TO-240AA
2
IXYS reserves the right to change limits, conditions and dimensions.
© 2019 IXYS all rights reserved
1
3
Data according to IEC 60747and per semiconductor unless otherwise specified
20191202d
MDMA35P1600TG
Rectifier
120
500
104
50 Hz, 80%VRRM
VR = 0 V
100
400
80
TVJ = 45°C
IFSM
IF
60
I 2t
103
300
[A]
[A]
TVJ = 45°C
2
[A s]
40
TVJ = 150°C
TVJ = 150°C
200
TVJ = 25°C
TVJ = 125°C
TVJ = 150°C
20
0
0.5
1.0
1.5
100
0.001
2.0
102
0.01
VF [V]
0.1
1
1
2
t [s]
4 5 6 7 8 910
2
Fig. 2 Surge overload current
vs. time per diode
Fig. 1 Forward current versus
voltage drop per diode
3
t [ms]
Fig. 3 I t versus time per diode
90
60
50
DC =
1
0.5
0.4
0.33
0.17
0.08
40
Ptot
30
75
RthHA =
0.6 K/W
0.8 K/W
1.0 K/W
2.0 K/W
4.0 K/W
6.0 K/W
DC =
1
0.5
0.4
0.33
0.17
0.08
60
IF(AV)M
45
[A]
[W]
20
30
10
15
0
0
0
10
20
30
40
0
IF(AV)M [A]
50
100
150
0
50
100
150
TC [°C]
Tamb [°C]
Fig. 5 Max. forward current vs.
case temperature per diode
Fig. 4 Power dissipation vs. forward current
and ambient temperature per diode
1.0
0.8
ZthJC
Constants for ZthJC calculation:
0.6
i
Rthi (K/W)
ti (s)
1
0.042
0.001
2
0.128
0.010
3
0.425
0.050
4
0.305
0.230
[K/W]
0.4
0.2
0.0
1
10
100
1000
10000
t [ms]
Fig. 6 Transient thermal impedance junction to case vs. time per diode
IXYS reserves the right to change limits, conditions and dimensions.
© 2019 IXYS all rights reserved
Data according to IEC 60747and per semiconductor unless otherwise specified
20191202d
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