MDO600-16N1

MDO600-16N1 Standard Rectifier Module VRRM = 1600 V I FAV = 608 A VF = 1.01 V Single Diode Part number MDO600-16N1 Backside: isolated 2 3 Features / Advantages: Applications: Package: Y1 ● Planar passivated chips ● Very low leakage current ● Very low forward voltage drop ● Improved thermal behaviour ● Diode for main rectification ● For single and three phase bridge configurations ● Supplies for DC power equipment ● Input rectifiers for PWM inverter ● Battery DC power supplies ● Field supply for DC motors ● Isolation Voltage: 3600 V~ ● Industry standard outline ● RoHS compliant ● Base plate: Copper internally DCB isolated ● Advanced power cycling Disclaimer Notice Information furnished is believed to be accurate and reliable. However, users should independently evaluate the suitability of and test each product selected for their own applications. Littelfuse products are not designed for, and may not be used in, all applications. Read complete Disclaimer Notice at www.littelfuse.com/disclaimer-electronics. IXYS reserves the right to change limits, conditions and dimensions. © 2019 IXYS all rights reserved Data according to IEC 60747and per semiconductor unless otherwise specified 20191204c MDO600-16N1 Ratings Rectifier Conditions Symbol VRSM Definition max. non-repetitive reverse blocking voltage TVJ = 25°C VRRM max. repetitive reverse blocking voltage TVJ = 25°C IR reverse current VF forward voltage drop min. typ. TVJ = 25°C 1 mA TVJ = 140°C 30 mA I F = 600 A TVJ = 25°C 1.12 V 1.30 V 1.01 V TVJ = 125 °C I F = 1200 A VF0 threshold voltage rF slope resistance R thJC thermal resistance junction to case TC = 85 °C 180° sine R thCH thermal resistance case to heatsink total power dissipation I FSM max. forward surge current I²t CJ value for fusing junction capacitance IXYS reserves the right to change limits, conditions and dimensions. © 2019 IXYS all rights reserved 1.23 V T VJ = 140 °C 608 A TVJ = 140 °C 0.76 V 0.32 mΩ d = 0.5 for power loss calculation only Ptot V VR = 1600 V I F = 600 A average forward current 1600 VR = 1600 V I F = 1200 A I FAV max. Unit 1700 V 0.072 K/W 0.024 K/W TC = 25°C 1600 W t = 10 ms; (50 Hz), sine TVJ = 45°C 15.0 kA t = 8,3 ms; (60 Hz), sine VR = 0 V 16.2 kA t = 10 ms; (50 Hz), sine TVJ = 140 °C 12.8 kA t = 8,3 ms; (60 Hz), sine VR = 0 V 13.8 kA t = 10 ms; (50 Hz), sine TVJ = 45°C 1.13 MA²s t = 8,3 ms; (60 Hz), sine VR = 0 V t = 10 ms; (50 Hz), sine TVJ = 140 °C t = 8,3 ms; (60 Hz), sine VR = 0 V VR = 400 V; f = 1 MHz TVJ = 25°C 1.09 MA²s 812.8 kA²s 788.8 kA²s 762 Data according to IEC 60747and per semiconductor unless otherwise specified pF 20191204c MDO600-16N1 Package Ratings Y1 Symbol I RMS Definition Conditions RMS current per terminal min. TVJ virtual junction temperature T op operation temperature Tstg storage temperature -40 typ. max. 600 Unit A -40 140 °C -40 125 °C 125 °C 650 Weight g MD mounting torque 4.5 7 Nm MT terminal torque 11 13 Nm d Spp/App terminal to terminal creepage distance on surface | striking distance through air terminal to backside d Spb/Apb VISOL t = 1 second isolation voltage t = 1 minute Production Index (PI) Date Code (DC) 50/60 Hz, RMS; IISOL ≤ 1 mA 16.0 mm 25.0 mm 3600 V 3000 V Circuit yywwAA Part Number Lot.No: xxxxxx Data Matrix: part no. (1-19), DC + PI (20-25), lot.no.# (26-31), blank (32), serial no.# (33-36) Ordering Standard Ordering Number MDO600-16N1 Equivalent Circuits for Simulation I V0 R0 Marking on Product MDO600-16N1 * on die level Delivery Mode Box Code No. 509707 T VJ = 140°C Rectifier V 0 max threshold voltage 0.76 V R0 max slope resistance * 0.13 mΩ IXYS reserves the right to change limits, conditions and dimensions. © 2019 IXYS all rights reserved Quantity 2 Data according to IEC 60747and per semiconductor unless otherwise specified 20191204c MDO600-16N1 Outlines Y1 10 43 49 52 +0 -1,4 15 ±1 2x M8 28.5 50 2 38 35 4567 22.5 3 6.2 80 92 2 IXYS reserves the right to change limits, conditions and dimensions. © 2019 IXYS all rights reserved 3 Data according to IEC 60747and per semiconductor unless otherwise specified 20191204c MDO600-16N1 Rectifier 107 14000 1000 VR = 0V 900 12000 ITSM 800 50 Hz 80 % VRRM TVJ = 45°C TVJ = 140°C 10000 DC 180° sin 120° 60° 30° 700 2 8000 It IFAVM 106 2 6000 TVJ = 45°C [A s] [A] 500 [A] 400 300 TVJ = 140°C 4000 600 200 2000 100 105 0 0.001 0.01 0.1 0 1 1 10 0 2 Fig. 1 Surge overload current IFSM: Crest value, t: duration 50 75 100 125 150 TC [A] t [ms] t [s] 25 Fig. 3 Max. forward current at case temperature Fig. 2 I t versus time (1-10 ms) 1600 1200 R thKA K/W 800 Ptot 600 [W] 400 1400 0.03 0.07 0.12 0.2 0.3 0.4 0.6 1000 1200 IF 1000 [A] 800 DC 180° sin 120° 60° 30° 600 400 TVJ = 125°C 200 TVJ = 25°C 200 0 0 200 400 600 800 0 25 50 IFAVM [A] 75 100 125 150 0 0.2 0.4 0.6 0.8 1.0 1.2 1.4 1.6 VF [V] TA [°C] Fig. 4 Power dissipation vs. forward current and ambient temperature Fig. 5 Forward current IF vs. VF 3200 R 2800 R thKA K/W L 0.015 0.03 0.04 0.05 0.07 0.01 0.14 2400 Ptot [W] 2000 1600 1200 Circuit B2 4xMDO600 800 400 0 0 300 600 900 1200 0 IFAVM [A] 25 50 75 100 125 150 TA [°C] Fig. 6 Single phase rectifier bridge: Power dissipation vs. direct output current and ambient temperature R = resistive load, L = inductive load IXYS reserves the right to change limits, conditions and dimensions. © 2019 IXYS all rights reserved Data according to IEC 60747and per semiconductor unless otherwise specified 20191204c MDO600-16N1 Rectifier 5000 R thKA K/W 4500 0.01 0.02 0.03 0.045 0.06 0.08 0.12 4000 3500 Ptot [W] 3000 2500 2000 Circuit B6 6xMDO600 1500 1000 500 0 0 300 600 900 1200 1500 0 25 50 IdAVM [A] 75 100 125 150 TA [°C] Fig. 7 Three phase rectifier bridge: Power dissipation versus direct output current and ambient temperature 0.12 RthJC for various conduction angles d: 0.10 d RthJC (K/W) DC 0.072 180° 0.0768 120° 0.081 60° 0.092 30° 0.111 0.08 ZthJC 0.06 30° 60° 120° 180° DC [K/W] 0.04 Constants for ZthJC calculation: i Rthi (K/W) 0.02 0.00 10-3 10-2 10-1 100 101 102 t [s] 1 2 3 4 0.0035 0.0186 0.0432 0.0067 ti (s) 0.0054 0.098 0.54 12 Fig. 8 Transient thermal impedance junction to case 0.14 RthJK for various conduction angles d: 0.12 d RthJK (K/W) DC 0.096 180°C 0.1 120°C 0.105 60°C 0.116 30°C 0.135 0.10 ZthJK [K/W] 0.08 0.06 30° 60° 120° 180° DC 0.04 0.02 0.00 10-3 10-2 10-1 100 Constants for ZthJK calculation: 101 t [s] 102 i 1 2 3 4 5 Rthi (K/W) ti (s) 0.0035 0.0054 0.0186 0.098 0.0432 0.54 0.067 12 0.024 12 Fig. 9 Transient thermal impedance junction to heatsink IXYS reserves the right to change limits, conditions and dimensions. © 2019 IXYS all rights reserved Data according to IEC 60747and per semiconductor unless otherwise specified 20191204c