MIXA150R1200VA

MIXA150R1200VA preliminary XPT IGBT Module VCES = 1200 V I C25 = 250 A VCE(sat) = 1.7 V Boost Chopper Part number MIXA150R1200VA Backside: isolated 6/7 1/2 9 10 4/5 Features / Advantages: Applications: Package: V1-A-Pack ● Easy paralleling due to the positive temperature coefficient of the on-state voltage ● Rugged XPT design (Xtreme light Punch Through) results in: - short circuit rated for 10 µsec. - very low gate charge - low EMI - square RBSOA @ 3x Ic ● Thin wafer technology combined with the XPT design results in a competitive low VCE(sat) ● SONIC™ diode - fast and soft reverse recovery - low operating forward voltage ● AC motor drives ● Solar inverter ● Medical equipment ● Uninterruptible power supply ● Air-conditioning systems ● Welding equipment ● Switched-mode and resonant-mode power supplies ● Inductive heating, cookers ● Pumps, Fans ● Isolation Voltage: 3600 V~ ● Industry standard outline ● RoHS compliant ● Soldering pins for PCB mounting ● Height: 17 mm ● Base plate: DCB ceramic ● Reduced weight ● Advanced power cycling Terms Conditions of usage: The data contained in this product data sheet is exclusively intended for technically trained staff. The user will have to evaluate the suitability of the product for the intended application and the completeness of the product data with respect to his application. The specifications of our components may not be considered as an assurance of component characteristics. The information in the valid application- and assembly notes must be considered. Should you require product information in excess of the data given in this product data sheet or which concerns the specific application of your product, please contact your local sales office. Due to technical requirements our product may contain dangerous substances. For information on the types in question please contact your local sales office. Should you intend to use the product in aviation, in health or life endangering or life support applications, please notify. For any such application we urgently recommend - to perform joint risk and quality assessments; - the conclusion of quality agreements; - to establish joint measures of an ongoing product survey, and that we may make delivery dependent on the realization of any such measures. IXYS reserves the right to change limits, conditions and dimensions. © 2017 IXYS all rights reserved Data according to IEC 60747and per semiconductor unless otherwise specified 20170522c MIXA150R1200VA preliminary Ratings IGBT Symbol VCES Definition VGES max. DC gate voltage VGEM max. transient gate emitter voltage I C25 collector current Conditions I C80 Ptot total power dissipation VCE(sat) collector emitter saturation voltage min. TVJ = collector emitter voltage I C = 150 A; VGE = 15 V gate emitter threshold voltage IC = I CES collector emitter leakage current VCE = VCES; VGE = 0 V V A TC = 80 °C 175 A TC = 25°C 695 W 2.1 V TVJ = 25°C 1.7 = 125 °C TVJ = 25°C TVJ = 25°C TVJ = 125 °C Q G(on) VCE = 600 V; VGE = 15 V; IC = 150 A t d(on) turn-on delay time tr current rise time t d(off) turn-off delay time tf current fall time Eon turn-on energy per pulse Eoff turn-off energy per pulse RBSOA reverse bias safe operating area TVJ = 125 °C VCE = 600 V; IC = 150 A VGE = ±15 V; R G = 1.2 Ω 6.8 short circuit safe operating area VCEmax = 1200 V t SC short circuit duration VCE = 900 V; VGE = ±15 V I SC short circuit current R G = 1.2 Ω; non-repetitive R thJC thermal resistance junction to case R thCH thermal resistance case to heatsink 7.5 0.1 0.1 V mA mA nA 510 nC 220 ns 100 ns 400 ns 220 ns 21.5 mJ 17 mJ TVJ = 125 °C VCEmax = 1200 V SCSOA V 1.9 6 500 VGE = ±20 V total gate charge I CM V ±30 gate emitter leakage current VGE = ±15 V; R G = 1.2 Ω ±20 250 I GES inductive load max. Unit 1200 V TC = 25°C TVJ 6 mA; VGE = VCE VGE(th) typ. 25°C TVJ = 125 °C 450 A 10 µs A 650 0.16 K/W K/W 0.10 Diode VRRM max. repetitive reverse voltage TVJ = 25°C 1200 V IF25 forward current TC = 25°C 190 A TC = 80 °C 130 A TVJ = 25°C 2.20 V 0.3 mA IF 80 VF forward voltage I F = 150 A IR reverse current VR = VRRM Q rr reverse recovery charge I RM max. reverse recovery current t rr reverse recovery time E rec reverse recovery energy R thJC thermal resistance junction to case R thCH thermal resistance case to heatsink TVJ = 125°C TVJ = 125°C IXYS reserves the right to change limits, conditions and dimensions. © 2017 IXYS all rights reserved VR = 600 V -di F /dt = 2500 A/µs IF = 150 A; VGE = 0 V 1.95 TVJ = 25°C TVJ = 125°C V 0.8 mA 20 µC 175 A 350 ns 10 mJ 0.28 K/W 0.20 Data according to IEC 60747and per semiconductor unless otherwise specified K/W 20170522c MIXA150R1200VA preliminary Package Ratings V1-A-Pack Symbol I RMS Definition Conditions RMS current per terminal min. TVJ virtual junction temperature T op operation temperature Tstg storage temperature -40 max. 100 Unit A -40 150 °C -40 125 °C 125 °C 37 Weight MD 2 mounting torque d Spp/App Date Code Prod. Index M I X A 150 R 1200 VA Part Number (Typ) Lot No.: Data Matrix: Typ (1-19), DC+Prod.Index (20-25), FKT# (26-31) leer (33), lfd.# (33-36) Ordering Number MIXA150R1200VA Equivalent Circuits for Simulation I V0 terminal to backside 12.0 mm 3600 V 3000 V Part description yywwA Ordering Standard R0 = = = = = = = = Module IGBT XPT IGBT Gen 1 / std Current Rating [A] Boost Chopper Reverse Voltage [V] V1-A-Pack Marking on Product MIXA150R1200VA Delivery Mode Blister IGBT Diode threshold voltage 1.1 1.25 V R0 max slope resistance * 9.2 5.7 mΩ © 2017 IXYS all rights reserved Quantity 24 Code No. 511595 T VJ = 150 °C * on die level V 0 max IXYS reserves the right to change limits, conditions and dimensions. Nm mm 50/60 Hz, RMS; IISOL ≤ 1 mA t = 1 minute 2.5 6.0 t = 1 second isolation voltage g terminal to terminal creepage distance on surface | striking distance through air d Spb/Apb VISOL typ. Data according to IEC 60747and per semiconductor unless otherwise specified 20170522c MIXA150R1200VA preliminary 3,6 ±0,5 Outlines V1-A-Pack 0,5 +0,2 35 26 63 31,6 2 max. 0,25 13 17 ±0,25 R2 52 (see 1) = *0 2 3 *7 *14 Ø 6,1 Ø 2,5 1,5 *7 5,5 *14 1 12,2 11,75 ±0,3 11,75 ±0,3 = 1x45° 15 4 5 6 4 *11 8 *7 *0 Ø 2,1 10 7 *14 9 6 5,5 *0 *11 6 0,5 25 *7 *14 Marking on product Aufdruck der Typenbezeichnung 25 Ø 0,8 * 25,75 ±0,3 25,75 1 ±0,2 ±0,3 Remarks / Bemerkungen: 1. Nominal distance mounting screws on heat sink: 52 mm / Nennabstand Befestigungsschrauben auf Kühlkörper: 52 mm 2. General tolerance / Allgemeintoleranz : DIN ISO 2768 -T1-c 3. Surface treatment of pins: tin plated (Sn) in hot dip / Oberflächenbehandlung der Pins: verzinnt (Sn) im Tauchbad 4. Detail X : EJOT PT® self-tapping screws (dimension K25) to be recommended for mounting on PCB  selbstschneidende Schraube (Größe K25) empfohlen für die PCB-Montage Take care on the maximum screw length according to board thickness and the maximum hole depth of 6 mm Bei der Wahl der Schraubenlänge die PCB-Dicke und die maximale Lochtiefe von 6mm beachten Recommended mounting torque: 1.5 Nm / Empfohlenes Drehmoment: 1.5 Nm   6/7 2 +0,2 1/2 9 10 4/5 IXYS reserves the right to change limits, conditions and dimensions. © 2017 IXYS all rights reserved Data according to IEC 60747and per semiconductor unless otherwise specified 20170522c MIXA150R1200VA preliminary IGBT 300 300 25°C 200 IC 300 VGE = 19 V 17 V 15 V VGE = 15 V 200 [A] 200 11 V IC 125°C VCE = 20 V 13 V IC TVJ = 125°C [A] [A] 100 125°C 100 100 25°C 9V 0 0.0 0 0 0.5 1.0 1.5 2.0 2.5 3.0 0 1 2 VCE [V] 6 4 30 60 200 [mJ] [ns] 20 100 13 50 600 40 Eoff tr tr 10 11 12 60 300 td(on) 9 Fig. 3 Typ. transfer charact. IGBT 800 RG = 1.2 VCE = 600 V VGE = ±15 V TVJ = 125°C 400 40 8 VGE [V] Fig.2 Typ. output characteristics IGBT 40 RG = 1.2 VCE = 600 V VGE = ±15 V TVJ = 125°C Eon 7 VCE [V] Fig.1 Output characteristics IGBT 80 3 t t d(off) 20 400 [ns] [mJ] 30 [A] 125°C 20 tf 10 IF 200 10 25°C Eoff Eon 0 0 0 100 200 0 300 IC [A] Fig. 4 Typ. turn-on energy & switch. times vs. collector current 8 80 RG = 1.2 VR = 600 V TVJ = 125°C 100 200 2.5 60 Erec Irr 4 40 [A] [mJ] 2 125 TVJ = 125°C VR = 600 V IF = 30 A 2.0 6 300 IC [A] Fig. 5 Typ. turn-off energy & switch. times vs. collector current Erec Irr 0.5 0 10 20 30 40 50 0 60 2.0 2.5 1 Diode Erec 1.5 75 [mJ] ZthJC Irr 1.0 I rr 50 IGBT 0.1 [K/W] [A] Fig. 7 Typ. reverse recovery characteristics Diode IXYS reserves the right to change limits, conditions and dimensions. Ri 0.020 0.003 0.040 0.097 25 0.0 IF [A] © 2017 IXYS all rights reserved 1.5 VF [V] Fig. 6 Typ. forward characteristics Diode 20 Erec 1.0 100 0.5 0 0 0.0 0 0 0 4 8 12 16 20 0 24 RG [ ] Fig. 8 Typ. reverse recovery characteristics Diode 0.01 0.001 0.01 IGBT ti 0.006 0.007 0.030 0.250 0.1 Ri 0.054 0.050 0.096 0.080 1 Diode t 0.002 0.030 0.030 0.080 i 10 t [s] Fig. 9 Transient thermal resistance junction to case Data according to IEC 60747and per semiconductor unless otherwise specified 20170522c